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Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

bipolar transistor bc107 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - bc 5411

Abstract: BC107 pin configuration BC108 pin configuration BC107 BC108 transistor BC108 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
Text: BC107 /BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature , 1 20/04/06 V1.0 BC107 /BC108 Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Symbol BC107 BC108 Collector-Emitter Voltage VCEO 45 25 Collector-Base , 20/04/06 V1.0 BC107 /BC108 Series Low Power Bipolar Transistors Electrical Characteristics (Ta = , VCE (Sat) Base Emitter On Voltage VBE (on) Maximum IC = 2mA, IB = 0 BC107 BC108 45


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PDF BC107/BC108 BC107 BC108 bc 5411 BC107 pin configuration BC108 pin configuration BC107 BC108 transistor BC108 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
2004 - BC107 pin configuration

Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC108 pin configuration BC107 pin bc107a pin out BC107 DATASHEET Transistor BC109
Text: BC107 / BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar , / BC109 Low Power Bipolar Transistors Absolute Maximum Ratings DESCRIPTION SYMBOL BC107 BC108 , .0 BC107 / BC108/ BC109 Low Power Bipolar Transistors Description Symbol Test Condition DC , Group B Group C Group 30/05/05 V1.0 BC107 / BC108/ BC109 Low Power Bipolar Transistors , V1.0 BC107 / BC108/ BC109 Low Power Bipolar Transistors Notes: International Sales Offices


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PDF BC107/ BC108/ BC109 BC107 BC108 BC109 BC107 pin configuration BC109 pin configuration BC109C pin configuration BC108 pin configuration BC107 pin bc107a pin out DATASHEET Transistor BC109
1998 - ic 555 using as a voltage comparator

Abstract: PWM USING IC 555 TIMER pulse position modulation using 555 555 missing pulse detector circuit 555 missing pulse detector PROCESS CONTROL TIMER using ic 555 metal detector using 555 timer circuit diagram of process control of sequential timer using 3 relay sequential timer using 555 ic 555 use with metal detector
Text: current RS catalogue for suitable reference books. Typical Absolute maximum ratings bipolar Supply , Output 3 8 VCC 555 Reset 4 Bipolar and C-MOS versions Low external component count , systems, the supply of the C-MOSIC must be turned on first. C-MOS pin out diagrams Bipolar pin out , Figure 6 for both the bipolar and C-Mos timers. 3 1502322217 Timing formulae Monostable , current. Technical hints The bipolar timers have a `totem pole' type outputstage and during switching


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PDF 1N4148 BC107 IN4148 ic 555 using as a voltage comparator PWM USING IC 555 TIMER pulse position modulation using 555 555 missing pulse detector circuit 555 missing pulse detector PROCESS CONTROL TIMER using ic 555 metal detector using 555 timer circuit diagram of process control of sequential timer using 3 relay sequential timer using 555 ic 555 use with metal detector
2001 - 2N3907

Abstract: 2c415 2N3409 BSV81 2N3209 BC107-109 2N6534 2N3036L 2N3680 2N5252
Text: ) Bipolar Bipolar Bipolar Bipolar Linear Bipolar 2N2604-05 2N2907A-T46 2N3485-86 /A , BSY95A MOSFET (cont) Diode 2N3824LP 2N4416-TO46 BAX57 series MOSFET TO18 Bipolar , , 27 2N835, 69-69A 2N914-916 2N929-930A 2N995 2S103-104 2S104L BC107 -109 A/B/C BC177-179 A/B/C , 2N4856 2N4857 2N5116 TO71 Bipolar 2N2979 /A BCY87-89 TO72 Bipolar 2N2857 2N3839 2N5179 BFX67 BFY90 MOSFET 2N3824 BSV81 TO39 Bipolar 2N1132 2N1507 2N1613 2N1711, 16-17 2N1889-90


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PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 2N3209 BC107-109 2N6534 2N3036L 2N3680 2N5252
1997 - TRANSISTOR bc107 current gain

Abstract: AD7801BRU OP295 Characteristic curve BC107 CS1515 equivalent transistor bc107 equivalent component of transistor BC107 transistor BC107 pin diagram RU-20 AD7801BR
Text: 5V OR AD589 WITH VDD = 3V +5V DATA BUS CONTROL INPUTS Figure 32. Bipolar Operation , APPLICATIONS Bipolar Operation Using the AD7801 WR VOUT WR The AD7801 has been designed for unipolar operation but bipolar operation is possible using the circuit in Figure 32. The circuit shown is , EXT REF VOUT VDD REF IN +5V VOUT 0.1µF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to


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PDF 20-Pin AD7801 20-Lead RU-20) C2995 TRANSISTOR bc107 current gain AD7801BRU OP295 Characteristic curve BC107 CS1515 equivalent transistor bc107 equivalent component of transistor BC107 transistor BC107 pin diagram RU-20 AD7801BR
1997 - AD7801

Abstract: AD7801BR AD7801BRU RU-20 transistor BC107 specifications Characteristic curve BC107 CS1515 BC107 characteristic OP295
Text: 5V OR AD589 WITH VDD = 3V +5V DATA BUS CONTROL INPUTS Figure 32. Bipolar Operation , APPLICATIONS Bipolar Operation Using the AD7801 WR VOUT WR The AD7801 has been designed for unipolar operation but bipolar operation is possible using the circuit in Figure 32. The circuit shown is , EXT REF VOUT VDD REF IN +5V VOUT 0.1µF GND 2N3904/ BC107 AD820/ OP295 , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to


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PDF AD7801BR 20-Pin AD7801 20-Lead RU-20) C2995 AD7801 AD7801BRU RU-20 transistor BC107 specifications Characteristic curve BC107 CS1515 BC107 characteristic OP295
1997 - equivalent component of transistor BC107

Abstract: C2995 OP295
Text: 31 shows a serial interface between the AD7801 and the 8051/8088 processors. Figure 32. Bipolar , . Figure 31. AD7801­8051/8088 Interface DATA BUS AD7801 CS WR D0 D7 LDAC VOUT APPLICATIONS Bipolar Operation Using the AD7801 WR The AD7801 has been designed for unipolar operation but bipolar , VIN 1k FAIL 1k PASS EXT REF VOUT GND 0.1µF REF IN VDD VOUT +5V AD820/ OP295 2N3904/ BC107 , transistors to place in the feedback loop of the amplifier include the BC107 and the 2N3904, which enable the


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PDF 20-Pin AD7801 ADR-20) 20-Lead RU-20) C2995 equivalent component of transistor BC107 OP295
1996 - Characteristic curve BC107

Abstract: BC107 plastic transistor BC107 pin diagram equivalent component of transistor BC107 bc107 connections bc107 curves bipolar transistor bc107 Transistor BC107 Transistor BC107 PLASTIC PACKAGE BC107 equivalent
Text: VOUTA VDD AD7303 VOUTB 10k DATA Bipolar Operation Using the AD7303 The AD7303 has been designed for single supply operation but bipolar operation is achievable using the circuit shown in , or AD589 with VDD =3V SYNC R1 GND 20k R2 Serial Interface Figure 27. Bipolar , with VDD =5V AD7303 1Y1 DIN GND 2N3904/ BC107 - SYNC 1Y2 SYNC 74HC139 , include the BC107 or the 2N3904 which enable the current source to operate from a min Vsource of 6V .


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PDF AD7303 AD7303 Characteristic curve BC107 BC107 plastic transistor BC107 pin diagram equivalent component of transistor BC107 bc107 connections bc107 curves bipolar transistor bc107 Transistor BC107 Transistor BC107 PLASTIC PACKAGE BC107 equivalent
1998 - Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , 74HC4515N 4-16 Line Decoder/Demultiplexer with Input Latches - Inverting 19 ­ High-Voltage Bipolar , TOPFET Transistors 23 ­ Insulated Gate Bipolar Transistors 23 ­ Schottky Diodes 23 , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter , Application: The TEA1060C1 and TEA1061C1 are bipolar integrated circuits performing all speech, and line


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
SMD Codes

Abstract: TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
Text: - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Text: an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Not Available

Abstract: No abstract text available
Text: realized in a new bipolar technology, characterized by topbottom isolation techniques, allowing the im , . Fig 34 shows the protection circuit for an NPN power transistor (a symmetrical circuit applies to , 795 TDA7350A Figure 42 UCC Qsui BC1 ? INPUT ON/OFF PULSE BC107 to S T-B Y p in rS C , TDA7350A Resistance Stereo Bridge R1 R2 R3 R4 A two transistor network (fig. 47) has been


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PDF TDA7350A TDA7350A ----TDA7350A H91TDf)
Not Available

Abstract: No abstract text available
Text: realized in a new bipolar technology, characterized by topbottom isolation techniques, allowing the imple , . Fig 34 shows the protection circuit for an NPN power transistor (a symmetrical circuit applies to , L © 22K In > - i 10K ^ BC107 © il e - C w t i.w , 19/20 497 TDA7350A Resistance Stereo Bridge R1 R2 R3 R4 A two transistor


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PDF TDA7350A TDA7350A Q0b4714
MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation


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PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: large transistor die with a fine structure is required. Bipolar and MOS TRANSISTOR FABRICATION As , amplifier fundamentals 1.1.1 Transmitting transistor design Bipolar transistor dies 1.1.1.1 THE , total channel width) is used. Dimensioning is then very similar to that of a bipolar transistor , the emitter ballast resistors of a bipolar transistor is not required. This is because the , channel (gate) length. As for bipolar devices, the process used to manufacture a MOS transistor is


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Not Available

Abstract: No abstract text available
Text: 1 G Tfl4 REV. 0 AD7302 APPLICATIONS Bipolar Operation Using the AD7302 The AD7302 has been designed for single supply operation, but bipolar operation is achievable using the circuit shown in , within the programmed window an LED will indicate the fail condition. Figure 32. Bipolar Operation , the BC107 or the 2N3904, which enable the current source to operate from a min V s o u r c e of 6 V . The operating range is determined by the operating characteristics of the of the transistor


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PDF AD7302 20-Lead AD7302 prec20) RU-20)
1997 - ad7302

Abstract: AD7302BN AD7302BR AD7302BRU RU-20 Transistor BC107 PLASTIC PACKAGE OP295
Text: 31. AD7302­8051//8088 Interface ­12­ REV. 0 AD7302 APPLICATIONS Bipolar Operation Using , bipolar operation is achievable using the circuit shown in Figure 32. The circuit shown has been , . Bipolar Operation Using the AD7302 1k PASS REFIN AD7302 D7 VOUTA D0 PASS/FAIL A/B , feedback loop of the amplifier include the BC107 or the 2N3904, which enable the current source to operate , of the transistor . Suitable amplifiers include the AD820 and the OP295 both having railto-rail


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PDF 20-Lead AD7302 RU-20) C2990 ad7302 AD7302BN AD7302BR AD7302BRU RU-20 Transistor BC107 PLASTIC PACKAGE OP295
2011 - S-5725CNBL0-M3T1U

Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free *1. The option can be selected. Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S , -23-3 · SNT-4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series , function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series VDD Sleep / Awake logic *1 *1 OUT , HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name Structure 1. Product name S-5725 x x B x x


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PDF S-5725 OT-23-3 S-5725CNBL0-M3T1U
2011 - Not Available

Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.4_00 © Seiko , power-down circuit: • Lead-free (Sn 100%), halogen-free Bipolar latch VOUT = "L" at S pole detection , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev , Figure 2 2 Seiko Instruments Inc. HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev


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PDF S-5725 OT-23-3
1997 - ZETEX T 1049

Abstract: rele 12V 10A mosfet base inverter with chargers circuit ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 zetex 795a dc-ac converter royer laptop inverter ccfl jim Williams
Text: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered , Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c om p e n sa t i o n , aims to provide a general overview of this Zetex bipolar transistor technology with particular , Fast 3. Zetex 3rd Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c , ) This application note aims to provide a general overview of this Zetex bipolar transistor technology


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PDF 15mmx15mm FMMT717 ZETEX T 1049 rele 12V 10A mosfet base inverter with chargers circuit ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 zetex 795a dc-ac converter royer laptop inverter ccfl jim Williams
DCA50

Abstract: DCA50e germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
Text: MOSFET as an N-Channel device. Page 5 bipolar transistors Analysis of many types of transistor is , silicon or germanium. If the analyser has found a bipolar transistor (normal transistor ) on the test , circuit (I SC) Peak test voltage across open circuit (VOC) Bipolar transistor collector test current (I C) Bipolar transistor collector-emitter test voltage (V CEO) Bipolar transistor acceptable gain (H FE) Bipolar transistor gain resolution (H FE) Bipolar transistor measurable gain (H FE) Bipolar


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PDF DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
1997 - OP295

Abstract: No abstract text available
Text: €“8051//8088 Interface –12– REV. 0 AD7302 APPLICATIONS Bipolar Operation Using the AD7302 AD7302 DATA BUS The AD7302 has been designed for single supply operation, but bipolar operation is , Figure 32. Bipolar Operation Using the AD7302 1k VOUTA D0 PASS/FAIL A/B VOUTB CS 1 , feedback loop of the amplifier include the BC107 or the 2N3904, which enable the current source to operate , of the transistor . Suitable amplifiers include the AD820 and the OP295 both having railto-rail


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PDF 20-Lead AD7302 Attenuator10 RU-20) C2990â OP295
robert fried

Abstract: high power pulse generator with mosfet all power transistor
Text: transistor Second Breakdown of bipolar transistor BVDSS or BVCEO Log IDS Figure 2. Comparison of SOA for Power MOSFET and Power Bipolar Transistor 10 µs 100 µs IDM 1 ms ID 10 ms D.C , reviewed. In addition, the differences between Power MOSFET maximum ratings and Power Bipolar Transistor maximum ratings will be discussed. MOSFET VS. Bipolar Transistor MOSFETs have two major advantages , , they are not practical. To drive a Bipolar Transistor at its rated peak current would require an


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PDF
2011 - transistor marking code

Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free*2 Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open drain , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Block Diagrams 1 , . CMOS output product 2. 1 Without power-down function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name


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PDF S-5725 OT-23-3 transistor marking code
2011 - Not Available

Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free*2 Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open drain , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Block Diagrams 1 , .2.1_00 2. CMOS output product 2. 1 Without power-down function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name


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PDF S-5725 OT-23-3
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