The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TIPD146 Texas Instruments Op Amp with Single Discrete Bipolar Transistor Output Drive
CA3240AEZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C
CA3240EZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C
PMP3143 Texas Instruments Buck-Boost for IGBT Drivers -15V@500mA
UCC27532DBVR Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140
UCC27538DBVR Texas Instruments 2.5-A, 5-A, 35-VMAX VDD FET and IGBT Single Gate Driver 6-SOT-23 -40 to 140

bipolar BC transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - bc 617 transistor equivalent

Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor block stages of laptop computers BC SERIES ONLY TRANSISTORS FMMT720 FMMT717 FMMT620
Text: losses of a FMMT617 and a competitive dri ver transistor ( BC 818 ) a re also charted in Figure 2 , at 2.5A. Load 3A NPN and 2.5A PNP SOT23 Bipolar Devices Battery FMMT 617 Controller , Parameter 600 MO SF ET As can be seen in Table 1, the FMMT617 is a 15V NPN transistor capable of , current losses by Ib x Vbe. BC 81 8) Features To tal Lo ss es ( FMMT717 transistors , Zetex. These devices extend the FMMT620 and FMMT720 high performance surface mount bipolar ranges


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PDF FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor block stages of laptop computers BC SERIES ONLY TRANSISTORS FMMT720 FMMT620
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , new release of the bipolar compact transistor model Mextram (release 504). A test version of Mextram , Collector Epilayer of the Bipolar Transistor in the Mextram Model," IEEE Transactions on Electron Devices


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
SiC BJT

Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters NPN transistor mhz s-parameter RF Transistor s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Text: RF figures of merit reported to date for any SiC bipolar transistor . The calculated maximum , SiC bipolar transistor . 50 µm Fig. 2. Micrographs of a 4-finger RF BJT with , GHz respectively, the highest numbers reported to date for any SiC bipolar transistor . The , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction , (Ti/Au) Collector pad 4H-SiC bipolar junction transistors (BJTs) are promising RF power devices


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2013 - HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

Abstract: No abstract text available
Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design , measurement is performed on matching transistor pairs from a 0.35Pm RF BiCMOS process [4]. The fT peaks of , €” Bipolar modeling, mismatch modeling, RF circuit design. I. INTRODUCTION Fast commoditization of , bipolar transistors used in RFIC. It is based on the conventional S-parameter technique to measure the , , we assume it is statistically uncorrelated with the transistor mismatch. It is a good assumption


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PDF 40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Text: 6.0 BB BD DJ Dl Dl FE BX 12 12 12 10 10 6.0 3 BIPOLAR TRANSISTOR GEOMETRIES ALLEGRO MICROSYSTEMS INC bbE ] > 0504336 0 0 0 b 5 n 000 ALGR BA 0.023" x 0.023" BC , 0.016" x 0.017" 7 BIPOLAR TRANSISTOR GEOMETRIES ALLEGRO MICROSYSTEMS INC bbE D , ALLEGRO MICROSYSTEMS INC bbE D 0504330 000b515 4bS ALGR BIPOLAR TRANSISTORS , 6.0 Geometry* DM BB (DC, JG, KJ) KL BA BD (DD) SH DS BA BT BC BX TV (KF) SM (BT) YD KY DC DD BC VX KP


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PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
1996 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 SMD TRANSISTOR MARKING BF transistor 313 smd smd code marking SOT223 MINI POWER MOSFET
Text: . Thus a four-pin RF bipolar transistor in the SOT-343 package attains about 1 dB more gain at 1.8 GHz , islands act as carriers of twin-diode pairs or transistor chips (RF and LF types). Alignment of pins on , bipolar transistors in SOT-23 and SOT-323 packages; an increase in gain of about 0.3 dB is obtained in , Configuration BC 847 S BC 857 S BC 847 PN BCR 133 S to BCR 148 S BCR 183 S to BCR 198 S BCR 10 PN to , 100 250 2 npn transistors 2 pnp transistors 1 npn, 1 pnp transistor 2 npn digital


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1997 - ZETEX T 1049

Abstract: rele 12V 10A mosfet base inverter with chargers circuit ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 zetex 795a dc-ac converter royer laptop inverter ccfl jim Williams
Text: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered , Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c om p e n sa t i o n , aims to provide a general overview of this Zetex bipolar transistor technology with particular , Fast 3. Zetex 3rd Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c , ) This application note aims to provide a general overview of this Zetex bipolar transistor technology


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PDF 15mmx15mm FMMT717 ZETEX T 1049 rele 12V 10A mosfet base inverter with chargers circuit ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 zetex 795a dc-ac converter royer laptop inverter ccfl jim Williams
25cxx

Abstract: POWER TRANSISTOR BC 4060 TRANSISTOR BC 256 transistor bc 138 10L0
Text: TOLERANCE ±0.25mm (±0.010") REV. PART NUMBER P-Ri "R EIGHT PIN SURRACE BIPOLAR WITHOUT MOUNT DUAL CHANNEL PHOTOCOUPLER, NPUT, TRANSISTOR OUTPUT, EXTERNAL BASE CONNECTION. confidential information the information , , ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY , OTHERWISE SPECIFIED TOLERANCE IS ±0.25mm (±0.010") REV. PART NUMBER R-R( "R EIGHT PIN SURFACE BIPOLAR WITHOUT MOUNT DUAL CHANNEL PHOTOCOUPLER, NPUT, TRANSISTOR OUTPUT, EXTERNAL BASE CONNECTION. confidential


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2013 - transistor bc 7-40

Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060
Text: 6MBI100FC-060Module FUJI Electric IGBT Transistor Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American Microsemiconductor. Features , Dimensional Schematic AA AB AC AE AH AK AL AM AN BA BB BC BE BH BK BL BM BN BP BR BT , /JISQ9100:2009 Rev. C ISO9001:2008 Cert No. 45325 6MBI100FC-060Module FUJI Electric IGBT Transistor


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PDF 6MBI100FC-060Module 6MBI100FC-060 AS/EN/JISQ9100 ISO9001 transistor bc 7-40 6mbi100fc 6MBI100FC060 American Microsemiconductor
2000 - transistor BC 245

Abstract: Infineon Technologies transistor 4 ghz 420 transistor amplifier TRANSISTOR 14 GHZ infineon rf smd package RF TRANSISTOR SOT23 5 smd transistor infineon BFP420 RF Semiconductors TRANSISTOR BC 136
Text: 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier , transistor , decreasing the usable gain. Without feedback the gain of the amplifier would be 17.5 dB, but , 150k 0805 (Epcos) R4 0.100 Trimmer (Beckman) T1 BFP 420 SOT343 (Infineon) T2 BC 857B SOT23 (Infineon) T3 BC 857B SOT23 (Infineon) The following diagrams show power-gain


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1997 - LTC1172

Abstract: CTX110092 h bridge irf840 inverter transistor npn 12V 1A Collector Current 12v DC SERVO MOTOR CONTROL circuit 2A push pull converter 70V Zetex AN12 FMMT618 motor controller IRF830 12v dc motor speed controller using igbt pwm
Text: Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury , series of PNP and NPN bipolar transistors, loads of up to 6A peak, 2.5A continuous can be driven by , devices give performance unmatched by any other SOT23 transistor and many larger SOT89 and SOT223 , . Parallel diodes are often not necessary for this circuit as the reverse hFE of the driver transistor is , FMMT 718 100 FMMT 718 FMMT 718 BC 846 Controller 1.5A 1A FMMT 718 BC 846


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PDF FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 h bridge irf840 inverter transistor npn 12V 1A Collector Current 12v DC SERVO MOTOR CONTROL circuit 2A push pull converter 70V Zetex AN12 motor controller IRF830 12v dc motor speed controller using igbt pwm
micron so8n FOOTPRINT

Abstract: M24M01 st7fliteu09b6 current fed push pull topology ST2G3236 DFN 4X4 ST "mixed wire bonding" STV300NH02L STMPE801 262K-COLOR
Text: Supplies 5. BUL741 Cost Competitive Power Bipolar Transistor for Low Power, Current Fed HF Ballasts , Bipolar Transistor By Bettina Rubino Power Bipolar & IGBT Application Development COST COMPETITIVE POWER BIPOLAR TRANSISTOR FOR LOW POWER, CURRENT FED HF BALLASTS The introduction of BUL741 will further , collector junction breakdown capability (with the junction J BE reverse biased), allowing the bipolar to , input half bridge in current fed topologies. Power Bipolar For Universal Input Topologies Part


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PDF TDE1708DFT STV300NH02L BUL741 M24M01: ST2G3236 OT-666 micron so8n FOOTPRINT M24M01 st7fliteu09b6 current fed push pull topology DFN 4X4 ST "mixed wire bonding" STV300NH02L STMPE801 262K-COLOR
2000 - transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 TR BC 548 transistor c202 TI 121 Transistor opa660 pspice transistor directory
Text: high-impedance current source output (collector). In contrast to a bipolar transistor , this amplifier allows , consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog


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603 transistor npn

Abstract: BT 316 transistor
Text: O b S n 000 ■ALGR BIPOLAR TRANSISTOR GEOMETRIES BA BD 0.023" x 0.023" BC 0.023 , – ALGR BIPOLAR TRANSISTOR GEOMETRIES 0.052 in in sq. KF 0.018" X 0.018" KG 0.225â , ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i ■DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V(B )C O T R B V(B )C O ’ RE V , — 30 10 1.0 20 2.0 50 10 6.0 BIPOLAR TRANSISTORS 40 40 BM 25


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PDF DSDH33Ã Q00bS17 D40D11 THC40D11 D41D11 THC41D11 0S0433fl 05D433fl 603 transistor npn BT 316 transistor
TR BC 107

Abstract: No abstract text available
Text: SIXTEEN PIN SURFACE MOUNT QUAD CHANNEL PHOTOCOUPLER, BIPOLAR INPUT, TRANSISTOR OUTPUT, WITHOUT EXTERNAL , SURRACE MOUNT GUAD CHANNEL PHOTOCOUPUER, BIPOLAR INPUT, TRANSITOR OUTPUT, WITHOUT EXTERNAL BASE CONNECTION , DRAWN BY: TM/ BC CHECKED BY: APPROVED BY: DATE: 8-12-99 PAGE: 1 OE 2 SCALE: N/A ELECTRO-OPTICAL , : 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY: DATE: 8-12-99 PAGE: 2 OF 2


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PDF PCT421 TR BC 107
1996 - Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
Text: high-impedance current source output (collector). In contrast to a bipolar transistor , this amplifier allows , , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog


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PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
l1n06cle

Abstract: 5sv TRANSISTOR 417 TRANSISTOR l1n06c L1N06
Text: monolithic power circuit which incorporates a lateral bipolar transistor , resistors, zener diodes, and a , in series with the source. The base and emitter of a lateral bipolar transistor is connected across this resistor, and the collector of the bipolar transistor is connected to the gate of the PowerMOS , junction of the bipolar transistor , the bipolar transistor "turns on". A series resistor is incorporated in series with the gate of the PowerMOS transistor allowing the bipolar transistor to drive the gate of the


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PDF RLP1N06CLE RLP1N06CLE l1n06cle 5sv TRANSISTOR 417 TRANSISTOR l1n06c L1N06
Lifepo4

Abstract: XFL4020-102ME MN1 transistor COILCRAFT XFL4020 si7938dp transistor MN1 FDMC8030
Text: through the diode, through the B-C junction of the NPN bipolar transistor , and pulls the gate up through , (about ­0.6V). The negative voltage forward-biases the base-emitter junction of the NPN bipolar transistor , shorting the gate to the input and ensuring that the gate is never more than about 0.5V above


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PDF LTC4156 LTC4155 LTC4155/LTC4156 FDMC8030 LTC4155/LTC4156 dn496 Lifepo4 XFL4020-102ME MN1 transistor COILCRAFT XFL4020 si7938dp transistor MN1 FDMC8030
2004 - BC177 NPN transistor

Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
Text: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 1 2 .7 (0 .5 0 0 ) m in . , 7 . 2 1 2 .5 4 (0 .1 0 0 ) N o m . The BC 177, BC 178 & BC 179 are silicon


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PDF BC177 BC178 BC179 BC177 NPN transistor BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
transistor D613 equivalent

Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
Text: ), external blocking capacitors 26 39 1 RTG Ana LV Output for external bipolar transistor in , ], OSC[2:1] -0.3 Digital Output Voltage VOUT_DIG RTG (in case of external bipolar transistor , °C ambient temperature is a target value. For temperatures >105°C an external bipolar regulator transistor , 3.9V Possibility to put an external bypass transistor for high temperature requirements Very low , o o o o o 4 programmable 16bit PWM modules for external transistor full bridge applications


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PDF MLX16x8 J2602, ISO/TS16949 ISO14001 MLX81150 transistor D613 equivalent TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
BC 459

Abstract: CT1487D
Text: . BC output indicates one or more bits set or address mismatch in a received status word. Bipolar , The CT2565 is a dual redundant MIL-STD-1553 Bus Controller ( BC ), Remote Terminal (RT), and Bus Monitor , are common for both BC and RT operation. The CT2565 implements all of the MIL-STD-1553 mode codes and , capability is provided, for both BC and RT modes, including response time, timing gaps, sync, parity, Manchester, word count and bit count. Additionally, in the BC mode, the status word is checked for proper


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PDF CT2565 MIL-STD-1553 CT2565 CT1487D BC 459
1995 - TRANSISTOR BC 157

Abstract: transistor bc 564 NMOS-2 transistor bc 541 HARRIS PACKAGE LOGIC FCT transistors BC 543 bc 574 transistor TRANSISTOR REPLACEMENT GUIDE AN6525 NMOS-2 transistor
Text: N+ P ISO N WELL 50 NPN TRANSISTOR FIGURE 5. SIMPLIFIED DRAWING OF BIPOLAR NPN TRANSISTOR , TRANSISTOR P ISO N+ P+ N WELL NPN BIPOLAR TRANSISTOR P+ SUBSTRATE (CONNECTED TO GND , create an NMOS transistor , a parasitic NPN bipolar transistor results. The P-material, which is tied to , , a bipolar NPN transistor in an emitter follower configuration is used. A small N-transistor is , TABLE 2. CROSS OF EQUIVALENT BIPOLAR FAST TTL TYPE TO HARRIS RECOMMENDED REPLACEMENT BIPOLAR FAST TYPE


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PDF CD74ACTXXXE/M TRANSISTOR BC 157 transistor bc 564 NMOS-2 transistor bc 541 HARRIS PACKAGE LOGIC FCT transistors BC 543 bc 574 transistor TRANSISTOR REPLACEMENT GUIDE AN6525 NMOS-2 transistor
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: large transistor die with a fine structure is required. Bipolar and MOS TRANSISTOR FABRICATION As , amplifier fundamentals 1.1.1 Transmitting transistor design Bipolar transistor dies 1.1.1.1 THE , total channel width) is used. Dimensioning is then very similar to that of a bipolar transistor , the emitter ballast resistors of a bipolar transistor is not required. This is because the , channel (gate) length. As for bipolar devices, the process used to manufacture a MOS transistor is


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
volterra

Abstract: VOLTERRA VT b2c2 poon quasi BFR520 transistor CT-20 BFR520 VOLTERRA -VSC1294-LF.D.G.B Modelling
Text: influence on the distortion behaviour of the bipolar transistor [2]. In conventional transistor models the , bipolar transistor are well understood [5,6,7]. At low frequencies there will be minima in the amplitude , 3V„. -e- © "2 (I e Figure 4 Simplified circuit model of a bipolar transistor with a lightly , case of Gummel Poon this line is reached much later, bipolar transistor distortion at higher current , 1994 Bipolar /BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects


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PDF CT-20, volterra VOLTERRA VT b2c2 poon quasi BFR520 transistor CT-20 BFR520 VOLTERRA -VSC1294-LF.D.G.B Modelling
Not Available

Abstract: No abstract text available
Text: CT2565 is a dual redundant MIL-STD-1553 Bus Controller ( BC ), Remote Terminal (RT), and Bus Monitor, (BM , ■Second source compatible to the BUS-65600 ■Dual redundant ■Selectable BC or , internally. Interface control lines are common for both BC and RT operation. The CT2565 implements all of , – RTU illegal mode codes externally selectable ■BC and RT error detection for response time , Complete error detection capability is provided, for both BC and RT modes, including response time, timing


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PDF CT2565 MIL-STD-1553 CT2565 T1487D BUS-65600
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