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Part Manufacturer Description Datasheet Download Buy Part
HDW3 Grayhill Inc DRESS NUT 34A SERIES
HDW11 Grayhill Inc LOCK WASHER 34A SERIES
1021100000 Weidmüller Interface GmbH & Co. KG Modular Terminal Block, 34A, 4mm2
0461018 Phoenix Contact Modular Terminal Block, 34A, 4mm2
VS-26MB100A Vishay Semiconductors RECTIFIER BRIDGE 1000V 25A D-34A
VS-36MB40A Vishay Semiconductors RECTIFIER BRIDGE 400V 35A D-34A

bdw 34 a Datasheets Context Search

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transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 2N3055 33T4 003G transistor bf 196 D 5038 transistor
Text: Package DO-7 DO-35 DO-41 DO- 34 A 1.100 1.100 1.100 1.100 B 0.230 0.140 0.150 0.104 C 0.020 0.020 , CONTINENTAL DEVICE INDIA 32E D U SBfiBBTM ⠖¡000054 =1 ⠖ 7^33^/3 PROFESSIONAL/COMMERCIAL GRADE , 2N 3055 N 15 60 20/70 4 4 2.87A x 40V 3.00 1.50 117 2N 3232 N 7.5 60 18/ 3 10 ⠀” 0.02 1.50 117 2N 3442 N 10 140 20/70 3 4 ⠀” 0.80 1.50 117 ⠀¢ 2N 3771 N 30 40 15/60 15 4 3.75A x 40V 0.80 1.17 150 2N , . 150 2N 4347 N 10 120- 20/70 2 4 —• ⠀”- 1.50 117 2N 6253 ' N 15 45 20/ 2 4 2.55A x 45V ⠀” 1.50


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PDF 625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 2N3055 33T4 003G transistor bf 196 D 5038 transistor
8 pin ic 3773

Abstract: No abstract text available
Text: DIMENSIONS E Q TO-105(MOD) Package TO-106(MOD) A t DO-7 DO-35 DO-41 DO- 34 A 1.100 , METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D ⠖ E3B33c 000DQ5M = ⠖ m 1 , BDW 21 BDW 21A BDW 21B BDW 21C BDW 22 BDW 22A BDW 22B BDW 22C BDX 18 Amp Volts N , BDY 38 BDY 73 N N N 15 6 15 60 40 CDP 055 P N ⠖ 5 5 CDN 055 60 140 , 4 3 4 4 ⠀˜4 4 4 4 4 4 4 4 4 4 4 4 15/150 1 5/150 1 5/150 15/150 15/150


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PDF E3B33c 000DQ5M lo-32 8 pin ic 3773
BOW53D

Abstract: 538 NPN transistor lb 53b bdw54a
Text: +150 -65 to +150 V A mA W W mJ D C °C °C V V UNIT BDW 538 BDW 53C 8DW 53D BDW53 BDW53A Pin 2 is in , innovations limited, UK AU G U ST 1978 - R E V IS E D M A R C H 1997 Designed for Complementary U se with BDW54, BDW54A, BDW54B, BDW 54C and B D W 540 40 W at 2S°C C ase Temperature b TO-220 P ACKAG E (TOP VIEW) cr 4 A Continuous Collector Current Minimum hra of 750 at 3 V, 1,5 A cc o SYM BOL , otherwise noted) RATING Collector-base voltage {% - 0) Colfector-emftter voltage (lB a 0) {see Note 1


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PDF BDW53, BDW53A, BDW53B, BDW53C, BDW53D BDW54, BDW54A, BDW54B, O-220 BDW53 BOW53D 538 NPN transistor lb 53b bdw54a
diode AE 84A

Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Text: Innovations Limited, UK A U G U ST 1978 R E V IS E D M A R C H 1997 · Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current Minimum hFE of 750 at 3 V, 6 A SOT-93 P AC KA G E CTOP VIEW) · · · Pin 2 is in electrical , ) RATING BDW84 BDW 84A Collector-base voltage (JE = 0 ) BDW S4B BDW 84C BDW84D BDW84 Coilector-emittsr voltage {lg = 0) (see Note 1) BDW84A BDW 04B BDW84C BDWB4D Emitter-base voltage Continuous collector


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PDF BDW84, BDW84A, BDW84B, BOW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D diode AE 84A BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: in einem Gehause PNP-Aufbau pnp p-ch P-Kanal Typ (FET) ⠀” 2— Beschreibung Abkurzung zurAnwendung der Halbleiter. A Antennenverstarker Regelstufen AGC NF-Bereich AF AM-Bereich AM , Stabllislerung Stabi Symmetrische Typen sym ⠀” 3— TV Ugs UHF uni Up VD VHF Vid +Diode, +di ./.ns , ) werden als Garantiewerte angegeben. ⠀” 4— *7 Transit-Frequenz in MHz. Bild Die zu den Bildnummern , . Deshalb konnen wir fur Folgeschaden nicht haften. ⠀” 5— INTRODUCTION This comparative data book


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
1997 - BDW 65 C

Abstract: BDW93C 94B DIODE BDW94B BDW94C BDW93B bdw93c applications Darlington npn
Text: Parameter Value Uni t NPN BDW 93B BDW 93C PNP BDW 94B BDW 94C V CBO , V IC I CM IB Collector Current 12 A Collector Peak Current 15 A Base Current 0.2 A P t ot Total Dissipation at T c 25 C T stg Storage Temperature Tj o , Current (IE = 0) Test Cond ition s Min. Typ . Un it for BDW 93B/94B for BDW 93C/94C T cas e = 150 o C for BDW 93B/94B for BDW 93C/94C V CB = 80 V V CB = 100 V 100 100 µA µA


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PDF BDW93B/BDW93C BDW94B/BDW94C BDW93B, BDW93C O-220 BDW94B BDW94C O-220 BDW 65 C 94B DIODE BDW94B BDW93B bdw93c applications Darlington npn
TRANSISTOR bd 147

Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Text: Voltage C o lle c to r-B a s e Voltage E m itte r-B a se Voltage C o lle ctor C u rrent - C ontinuous , Motorola Bipolar Power Transistor Device Data BDW 42 BDW 46 BDW47 ELECTRICAL CHARACTERISTICS (T q » 2 , 5.0 Vdc, l c - 0) - - m Adc 2.0 2.0 m Adc 1.0 1.0 2.0 m A dc - - _ ON CHARACTERISTICS (1) DC C u rrent G ain hFE 1000 250 V c E (s a t) 2.0 3.0 3.0 Vdc - Ade, Vce 4.0 Vdc) (IC - 10 Ade, Vce 4.0 Vdc) O c - 5.0 C o lle cto r-E m rtte r S a turation Voltage (IC - 5.0 Ade, Ib « 10


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PDF BDW46 BDW42/BDW47 O-220AB BDW47 BDW45, TRANSISTOR bd 147 bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: In h a lts v e r z e ic h n is T a b le o f c o n te n ts S o m m a ire In d ic e In d ic e W ic h tig e Im p o r ta n t in d ic a tio n s A w e rte n z e N o ta s H in w e is e n o te s im p o r ta n te s im p o rta n ti im p o rta n te s D a te n le x ik o n D a ta d ic tio n a r y L e x iq u e d e d o n n d e s E n c ic lo p e d ia d a ti V e r g le ic h s ta b e lle C o m p a r is o n ta b le T a b le d E q u iv a le n c e T a b la c o m p a ra tiv a T a b la c o m p a ra


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BE 64A

Abstract: BDW 64 BDw 32
Text: · 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C C Pin 2 is in , (unless otherwise noted) RATING BDW64 BDW 64A Collector-base voltage ( lE = 0) BDW64B BDW64C BDW64D BDW64 BDW 64A Collector-em itter voltage ( lB = 0) (see Note 1) BDW64B BDW64C BDW64D Em itter-base , ^tot ^tot i/ 2LIc 2 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C , in a circuit of: L = 20 mH, ^ B E (o ff) le ( o n ) = "5 mA, Rgg = 100 £2, = 0. Rs = 0-1 Q


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PDF BDW64, BDW64A, BDW64B, BDW64C, BDW64D BDW63, BDW63A, BDW63B, BDW63C BDW63D BE 64A BDW 64 BDw 32
BDW84C

Abstract: BDW84D
Text: , BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current Minimum hFE of 750 at 3 V, 6 A SOT-93 PACKAGE (TOP VIEW) · · · Pin 2 is in electrical contact , ) RATING BDW84 BDW 84A Collector-base voltage ( lE = 0) BDW84B BDW84C BDW84D BDW84 BDW 84A Collector-em , V V V A A W W mJ °C °C °C !c Iß ^tot ^tot i/ 2LIc 2 Tj Tstg Ta These values apply , based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, ^ B E (o ff


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84C
ED 83A

Abstract: BDW83B BDW83d
Text: , BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current Minimum hFE of 750 at 3 V, 6 A SO T-93 PACKAGE (TOP VIEW) · · · Pin 2 is in electrical contact , ) RATING BDW83 BDW 83A Collector-base voltage ( lE = 0) BDW83B BDW83C BDW83D BDW83 BDW 83A Collector-em , V A A W W mJ °C °C °C !c Iß ^tot ^tot i/ 2LIc 2 Tj Tstg Ta These values apply when the , capability of the transistor to operate safely in a circuit of: L = 20 mH, ^ B E (o ff) le ( o n ) = 5


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D ED 83A BDW83B
D895

Abstract: BD 895 bdw 34 a
Text: REVISED OCTOBER 1 9 8 4 · · · · 70 W a t 2 5 °C Case Temperature 8 A Continuous Collector Current Min hFE of 7 5 0 at 3 A or 4 A T-33-29 Designed for Power Amplifier and High-Speed Switching , linearly to 150°C free-air tem perature at the rate o f 16 m W /°C . 5V 8A 0 .3 A 70 W 2W - 65 °C to 150°C - 65°C to 150°C 1283 T fx a s >r In s t r u m e n t s POST OFFICE 8 0 X 225012 · D ALLAS. TEXAS 75265 i _ :_._ BD, BDW , BDX, BU, BUX, B U Y


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PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a
Not Available

Abstract: No abstract text available
Text: · 4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A C C Pin 2 is in , (unless otherwise noted) RATING BDW54 BDW 54A Collector-base voltage ( lE = 0) BDW54B BDW54C BDW54D BDW54 BDW 54A Collector-em itter voltage ( lB = 0) (see Note 1) BDW54B BDW54C BDW54D Em itter-base , -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A mA W W mJ °C °C °C These , This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH


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PDF BDW54, BDW54A, BDW54B, BDW54C, BDW54D BDW53, BDW53A, BDW53B, BDW53C BDW53D
HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a hbf4727 TDA3310 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR " PRODUCTS 1979/80 I NT , 3 8 10134 Torino Via La Loggia 51/7 Tel.: 011 -634572 FINLAND SG S-ATES S C A N D IN A V IA AB NORWAY SG S-ATES Scandinavia AB Sales O ffice: 02210 ESBO 21 K ä äntö piiri 2 T e l.: 9 0 , : 07 255545 Wattham. MA 02154 240 Bear H ill Road Tel.: (617) 890-6688 Telex: 923495 W HA A L P H A - N U M E R I C A L INDEX S M A L L S I G N A L P R O F E S S I O N A L S I L I CON T R A N S I


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PDF
transistors bu 407

Abstract: Transistors BD 330 bdx 330
Text: u m e n t s PO ST O F F IC E B O X 225012 · D A L L A S . T E X A S 75265 3 .41 BD, BDW , BDX , 0.4 1 4 10 1C - Collector Current - A 15 FIGURE 2 FIGURE 3 BD, BDW , BDX, BU, BUX, B U Y , L A S . T E X A S 75265 3 .4 3 BD, BDW , BDX, BU, BUX, B U Y Devices , IS E D O C T O B E R 1 9 8 4 · · · 60 W a t 2 5 °C Case Temperature 7 A Continuous Collector Current 15 A Peak Collector Current Specifically Designed for Portable T V Linescan Applications for M T V


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PDF cltI17Bt. 003titi3S BU406, BU407 10-Degree transistors bu 407 Transistors BD 330 bdx 330
TDA7250

Abstract: TRANSISTOR BDX 53 bdx 330 TRANSISTOR BDX tip147 transistor tip147 11014 TRANSISTOR BDX 14 DIP20 2480/equivalent tda7250
Text: BDX 53/54B BDW 93/94B TIP 142/147 BDW 93/94A BDW 93/94B BDV 64/65B MJ 11013


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PDF TDA7250 DIP20 TDA7250 TRANSISTOR BDX 53 bdx 330 TRANSISTOR BDX tip147 transistor tip147 11014 TRANSISTOR BDX 14 DIP20 2480/equivalent tda7250
BDW420

Abstract: BDW42-D
Text: 30 mAdc: V cE O (sus) = 80 Vdc (min.) - BDW46 100 Vdc (min.) - BDW 42/ BDW 47 Low Collector Emitter , Construction with B uilt-In Base Emitter Shunt resistors T O -220A B Compact Package BDW 42* PNP NPN BDW46 BDW 47* ` Motorola Preferred Device · · · MAXIMUM RATINGS Rating Collector-Emitter , There are two limitations on the power handling ability of a transistor: average junction temperature , Device Data B D W 42 B D W 46 B D W 47 PACKAGE DIMENSIONS N OTES: 1. 2. 3. D IM E N S IO N IN G A


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PDF BDW42/D BDW46 42/BDW -220A BDW420 BDW42-D
1995 - TDA7250

Abstract: TRANSISTOR BDX 53 tip 142 TDA7250 application note equivalent tda7250 tip 147 TRANSISTOR equivalent transistor tip147 BDW 38 DIP20 TRANSISTOR BDX
Text: BDX 53/54B BDW 93/94B TIP 142/147 BDW 93/94A BDW 93/94B BDV 64/65B MJ 11013


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PDF TDA7250 DIP20 TDA7250 TRANSISTOR BDX 53 tip 142 TDA7250 application note equivalent tda7250 tip 147 TRANSISTOR equivalent transistor tip147 BDW 38 DIP20 TRANSISTOR BDX
tda7250

Abstract: tda 7250 TRANSISTOR BDX 2.5/equivalent tda7250
Text: r Z 7 A T # S G S -T H O M S O N IL iO T ® « ! K TDA7250 60 W HI-FI DUAL AUDIO DRIVER , complementary output transistor in the Hi-Fi power amplifiers. A P P L IC A T IO N C IR C U IT 0 .4 7 u F , 20 K A Rl -V« 3 h 1 00KJÌ- ll u j 8 20 U 13 G *. T R2 1 nV F i -c = H F ] 12 7 , Voltage Swing Output Power (*) =± 35 V, R l =8 a il Vs = ± 30 V, R l = 8 Vs = ± 35 V, R l = 4 , 3.6 V mV dB V f = 1 kHz 12 (*) Gv = 26 dB. 60 (*) A p p lic a tio n c irc u it of fig .


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PDF TDA7250 TDA7250 00Kmentioned tda 7250 TRANSISTOR BDX 2.5/equivalent tda7250
BDX 625

Abstract: BUX 115 BD 896 898A D896 BD PNP BD900 BD902
Text: TE XA S IN S T R -COPTO} ~k2 QQBLbOS 5 J~ A i 62C 36605 BD896, BD896A,BD898 , - 70 W a t 2 5 ° C Case Temperature 8 A Continuous Collector Current Min Hf E of 7 5 0 at 3 A or 4 A Designed for Power Amplifier and High-Speed Switching Applications device schematic T -3 3 -3 , BD898 BD 898A -6 0 V -6 0 V - 5V -8 A -0 .3 A 70 W 2W - 65°C to 150°C - 6 5 °C to 1 5 0 °C BD900 BD , u m e n t s POST OFFICE BOX 225012 · D ALLAS. TEXAS 75265 3.9 BD, BDW , BDX, BU, BUX, B U Y


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PDF BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T0-22Q BD896 BDX 625 BUX 115 BD 896 898A D896 BD PNP BD900
1999 - BDW94B

Abstract: NPN/bow 94c BDW93C bdw93c applications BDW93C PNP BDW94C 94B DIODE
Text: DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 DESCRIPTION The BDW93C is a , PNP type is BDW94C. Also BDW94B is a PNP type. 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM , Uni t BDW 93C BDW 94B BDW 94C V CBO Collector-Base Voltage (IE = 0) 80 100 V , 12 A Collector Peak Current 15 A Base Current 0.2 A P t ot Total , (sat ) Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A IB = 20 mA I B = 100 mA


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PDF BDW93C BDW94B/BDW94C BDW93C O-220 BDW94C. BDW94B O-220 NPN/bow 94c bdw93c applications BDW93C PNP BDW94C 94B DIODE
BDW91

Abstract: No abstract text available
Text: *7# S G S -T H O M S O N [MOeiMillLieraeiDIgS BDW 91 BDW 92 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDW91 is a silicon epitaxial-base , BDW91 BDW92 180 180 6 4 1 00 Unit C o lle c to r- B a s e V o lta g e ( I e = 0) C o lle c to r - E m it te r V o lta g e (Ib = 0) E m itte r- B a s e V o lta g e ( l c = 0) C o lle c to r C u rrent Base C u rre n t Total D issip a tio n at Tease V V V A mA W W < 25 °C Tamb ^ 2 5 C 10 1 -65


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PDF BDW91 BDW92. BDW92
2000 - 93CFP

Abstract: BDW93CFP BDW94CFP 94CFP
Text: EQUIPMENT 2 T0-220FP DESCRIPTION The BDW93CFP, is a silicon epitaxial-base NPN transistor in , Parameter Value NPN PNP Uni t BDW 93CFP BDW 94CFP V CBO Collector-Base Voltage (IE = 0) 100 V V CEO Collector-Emitter Voltage (IB = 0) 100 V Collector Current 12 A Collector Peak Current 15 A Base Current 0.2 A IC I CM IB P t ot Total Dissipation , 100 mA 100 V V CE(sat ) Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A


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PDF BDW93CFP BDW94CFP T0-220FP BDW93CFP, O-220FP BDW94CFP. 93CFP BDW93CFP BDW94CFP 94CFP
2003 - TDA7250

Abstract: TDA7250 application note DIP20 tip147 inp transistor TRANSISTOR BDX 53
Text: +50W +70W 30W +50W +90W +130W BDX 53/54A BDX 53/54B BDW 93/94B TIP 142/147 BDW 93/94A BDW 93/94B BDV 64/65B MJ 11013/11014 9/11 TDA7250 mm DIM , devices or systems without express written approval of STMicroelectronics. The ST logo is a registered


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PDF TDA7250 DIP20 TDA7250 TDA7250 application note DIP20 tip147 inp transistor TRANSISTOR BDX 53
tektronix p6019

Abstract: ORP60
Text: 225012 * DA LLAS, TE X A S 75265 BD, BDW , BDX, BU, BUX, B U Y Devices TEXAS IN STR -COPTO , c: < a > to o a UJ or ET -d BD, BDW , BDX, BU, BUX, BUY Devices o T E X A S I N S T , TEXAS IN STR iO PTO J bE Q0 3 b b 7 S '8 9 6 1 7 2 6 T E X A S I N S T R ÎpPTO , CTOBER 1984 1 0 0 W a t 2 5 ° C C a s e Tem perature 10 A Continuous Collector Current 15 A Peak , -3 PACKAGE absolute m axim um ratings at 2 5 ° C c a se tem perature (unless otherw ise noted


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PDF BUY69A, BUY69B, BUY69C T-33-/3 tektronix p6019 ORP60
Supplyframe Tracking Pixel