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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

bd242 TRANSISTOR equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BD2428

Abstract: HEP transistors
Text: values vary slightly with transistor parameters. 2-24 BD242 , B0242A, BD242B, BD242C PNP SILICON , BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations , er-Specified Selections Available 8 C C C E <= T 0-220 PA C KA G E (TOP VIEW) o SY M BO L BD242 BD242A 8D242B BD242C BD242 VC£R VALUE -55 -70 -90 -115 -46 -60 VCEO -80 -100 VEBO fC !c m PttJt P.ot ViLIc2 Ti T , the transistor to operate safety in a circuit of: L = 20 mH, i8(on) = -0.4 A, Rgg = 100 ft VBE(ofl) «


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A 8D242B BD2428 HEP transistors
2000 - fast switching pnp transistor 3A 60V

Abstract: bd241 BD242
Text: BD242 /A/B/C BD242 /A/B/C Medium Power Linear and Switching Applications · Complement to BD241/A/B/C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor , : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C , : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242 /A : BD242B/C : BD242 : BD242A : BD242B : BD242C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 -


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PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C fast switching pnp transistor 3A 60V bd241 BD242
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD242A BD242C BD241 BD242
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. V -90 BD242 Collector-emitter voltage (IC = -30 mA) UNIT -55 BD242 BD242A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242 , BD242A, BD242B, BD242C


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242A BD242C BD242
1973 - Not Available

Abstract: No abstract text available
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , temperature (unless otherwise noted) RATING SYM B O L BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A BD242B VALUE -55 VCER -70 -115 BD242 -45 BD242A BD242B V CEO BD242C , at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely , . JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B
2000 - BD242

Abstract: No abstract text available
Text: BD242 /A/B/C BD242 /A/B/C Medium Power Linear and Switching Applications · Complement to BD241/A/B/C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor , : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C , : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242 /A : BD242B/C : BD242 : BD242A : BD242B : BD242C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 -


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PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C BD242
Not Available

Abstract: No abstract text available
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , noted) RATING BD242 Collector-em itter voltage (RBE = 100 BD242A £2) V CER SYM BO L VALUE -55 -70 -90 -115 -45 -60 UNIT BD242B BD242C BD242 V Collector-em itter voltage (lc = -30 mA , This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH , . Production processing does not necessarily include testing of all parameters. P BD242 , BD242A, BD242B


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A BD242B BD242
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD241 BD242 BD242A BD242C
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. V -90 BD242 Collector-emitter voltage (IC = -30 mA) UNIT -55 BD242 BD242A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242 , BD242A, BD242B, BD242C


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242 BD242A BD242C
1973 - Not Available

Abstract: No abstract text available
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , noted) RATING Collector-emitter voltage (RBE = 100 ) BD242A BD242 SYMBOL VCER VALUE -55 -70 -115 -45 , UNIT BD242C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD242A BD242 BD242B , is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = , Specifications are subject to change without notice. 1 BD242 , BD242A, BD242B, BD242C PNP SILICON POWER


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242A BD242
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242 BD242A BD241 BD242B BD242C
Text: slightly with transistor parameters. PRODUCT 2 INFORMATION BD242 , BD242A, BD242B, BD242C PNP , BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD242 , temperature range NOTES: 1. 2. 3. 4. -70 -115 BD242 Collector-emitter voltage (IC = -30 mA , capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B bd242 TRANSISTOR equivalent BD242 BD242A BD242B BD242C
BD242B

Abstract: BD242C BD241 BD242 BD242A
Text: current values shown are nominal; exact values vary slightly with transistor parameters. BD242 , BD242A , TRANSYS ELECTRONICS LIMITED BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS , (RBE = 100 Q) BD242 BD242A BD242B BD242C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD242 BD242A BD242B BD242C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , . 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L =


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B
2000 - BD242

Abstract: bd242 TRANSISTOR equivalent BD242A BD242B BD242C
Text: BD242 /A/B/C BD242 /A/B/C Medium Power Linear and Switching Applications · Complement to BD241 , Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER Parameter Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Value - 45 - 60 - 80 - 100 V V V V - 55 - 70 - 90 - 115 Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C Units , ) Parameter * Collector-Emitter Sustaining Voltage : BD242 : BD242A : BD242B : BD242C Test Condition


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PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C BD242 bd242 TRANSISTOR equivalent BD242A BD242B BD242C
1973 - Not Available

Abstract: No abstract text available
Text: BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , otherwise noted) RATING SYMBOL BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A VCER BD242C BD242 Collector-emitter voltage (IC = -30 mA) Emitter-base voltage Continuous collector , capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, V , subject to change without notice. 1 BD242 , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A
2000 - transistor crossreference

Abstract: transistor cross reference NPN Transistor BD241 TRANSISTOR b 115 fairchild BD241 bd241a
Text: BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications · Complement to BD242 /A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor , Rev. E Product Folder - Fairchild P/N BD241B - NPN Epitaxial Silicon Transistor SEARCH , products >> Home find products space space space BD241B Products groups NPN Epitaxial Silicon Transistor , Complement to BD242 /A/B/C applications respectively New products Product selection and parametric search back


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PDF BD241/A/B/C BD242/A/B/C O-220 BD241 BD241A BD241B BD241C transistor crossreference transistor cross reference NPN Transistor BD241 TRANSISTOR b 115 fairchild BD241 bd241a
bd242

Abstract: No abstract text available
Text: BD242 /A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Emitter Voltage : BD242 : BD242A : BD242B : BD242C Collector Emitter Voltage : BD242 : BD242A : BD242B , Sustaining Voltage : BD242 : BD242A : BD242B : B D242C Collector Cutoff Current Collector Cutoff Current , * Base Emitter On Voltage : BD242 /A : BD242 (Tc =25°C) Symbol V c eo ( s u s ) Test C ond itions


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PDF BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C bd242
TIP 48 transistor

Abstract: transistor BD245 TIP 32 transistor transistor TIP 32 transistor tip 3055 transistor tip 125 BD242C BD242B BD242A TO-3P
Text: vary slightly with transistor parameters. 2-36 Texas Instruments BD242 , BD242A, BD242B, BD242C ,  BD242 , BD242A, BD242B, BD242C FOB POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD242 BD242A BD242B Collector-Emitter Voltage (Rbe = 100 n).-55 V -70 , . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2 , SHEET: Supplementary data may be published at a later date. 2-36 Texas Instruments BD242 , BD242A


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PDF BD242, BD242A, BD242B, BD242C BD241A-C BD242 BD242A BD242B 40PEP 80PEP TIP 48 transistor transistor BD245 TIP 32 transistor transistor TIP 32 transistor tip 3055 transistor tip 125 BD242C BD242B TO-3P
Not Available

Abstract: No abstract text available
Text: p-n-p types BD242 , BD242A, BD242B, and BD242C TERMINAL DESIGNATIONS POW ER TRANSISTORS Types , BD241-series power transistors are complements of the devices in the BD242 series. (The BD242-series devices , BASE C U R R E N T IB TRANSISTOR DISSIPATION: PT A t case temperatures up to 25°C . . . . A t


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PDF BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C
2002 - BD241

Abstract: BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD242C CDIL
Text: Certified Manufacturer PLASTIC POWER TRANSISTORS BD241, A, B, C NPN BD242 , A, B, C PNP TO , MAXIMUM RATINGS (Ta=25ºC) SYMBOL BD241 BD242 Collector Emitter Voltage VCEO 45 Collector , PLASTIC POWER TRANSISTORS BD241, A, B, C NPN BD242 , A, B, C PNP TO-220 Plastic Package ELECTRICAL , BD242 , A, B, C PNP TO-220 Plastic Package TO-220 Plastic Package B C E DIM MIN MAX A , 19" x 19" 10.0K 29 kgs Page 3 of 4 Notes BD241, A, B, C NPN BD242 , A, B, C PNP TO


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PDF BD241, BD242, O-220 BD241 BD242 C-120 242Rev 141102E BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD242C CDIL
B0242c

Abstract: No abstract text available
Text: FEATURES: * Collector-Emitter Sustaining Voltage Vci««ia 45V(Mln)- BD241 , BD242 60V(Min)- BD241A.BD242A , TRANSISTORS 45-100 VOLTS 40 WATTS MAXIMUM RATINGS Characteristic PNP BD242 BD242A BD242B BD242C Symbol BD241 BD241A BD241B BD241C Unit BD242 BD242A BD242B B0242C Collector-Emitter Voltage VCEO , ,V_= 0 ) (V.- 80V, V.," 0 ) (VCI= 100V.V,.= 0 ) BD241 . BD242 BD241A.BD242A BD241B.BD242B


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PDF BD241 BD241A BD241B BD241C BD242 BD241A BD242A BD241B BD242B B0242c
B0241A

Abstract: NPN Transistor BD241 BD241 tpm300 BD241C
Text: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Copyright C 1997, Povwf InnovaUone Um itod. 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD242 Series 40 W at 25"C Case Temperature 3 A Continuous Collector , °C free air temperature at the rate of 16 mW/°C. This rating is based on the capablttty of the transistor , shown are nominal; exact values vary slightly with transistor parameters. BD241, BD241A, BD241B


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 B0241A BD241B NPN Transistor BD241 tpm300
2001 - tj241

Abstract: 241c BD242C BD242B BD242A BD242 BD241C BD241B BD241A BD241
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD241, BD241A, BD241B, BD241C BD242 , BD242A, BD242B, BD242C BD241, 241A, 241B, 241C NPN PLASTIC POWER TRANSISTORS BD242 , 242A, 242B, 242C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching , . 45 60 80 100 V max. 55 70 90 115 V Page 1 of 3 BD241, BD241A, BD241B, BD241C BD242


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PDF O-220 BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C tj241 241c BD242C BD242B BD242A BD242 BD241C BD241B BD241A BD241
1973 - BD241

Abstract: bd242 TRANSISTOR equivalent BD241A BD241B BD241C BD242
Text: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available , temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate , µs Voltage and current values shown are nominal; exact values vary slightly with transistor


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241B BD241A BD241 bd242 TRANSISTOR equivalent BD241A BD241B BD241C
1973 - Not Available

Abstract: No abstract text available
Text: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series TO-220 PACKAGE (TOP VIEW) 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available , temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate , ; exact values vary slightly with transistor parameters. TCUDORP 2 IC = 1 A Turn-off time


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A
BD241

Abstract: BD241A BD241B BD241C BD242 bd242 TRANSISTOR
Text: G IRANSYS ELECTRONICS LIMITED BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS • Designed for Complementary Use with the BD242 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current • Customer-Specified Selections , transistor to operate safely in a circuit of: L = 20 mH, lB(on) = 0.4 A, RBE = 100 Q, VBE(off) = 0, Rs = 0.1 , current values shown are nominal; exact values vary slightly with transistor parameters. BD241, BD241A


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A BD241B BD241 BD241A BD241C bd242 TRANSISTOR
T1P32

Abstract: bd241 42bb
Text: ^7# f Z 7 SGS-THOMSON BD241/A/B/C BD242 /A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium power linear and switching applications. The com plem entary PNP types are the BD242 , BD242A, BD242B and BD242C respectively. IN T E R , P aram eter NPN PNP* VcER VcEO V ebo lc I CM Ib P tot BD241 BD242 55 45 BD241A BD242A 70 60


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PDF BD241/A/B/C BD242/A/B/C BD241, BD241 BD241B BD241C TCi-220 BD242, BD242A, BD242B T1P32 42bb
D241C

Abstract: No abstract text available
Text: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD242 /A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VcEO Rating 45 60 80 100 55 70 90


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C D241C
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