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2004 - BC640

Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638 ; BC640 PNP medium , Semiconductors Product specification PNP medium power transistors BC636; BC638 ; BC640 FEATURES , handbook, halfpage PNP medium power transistor in a TO-92; SOT54 plastic package. NPN complements , plastic single-ended leaded (through hole) package; 3 leads BC638 BC640 2004 Oct 11 2 VERSION , ; BC638 ; BC640 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).


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PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A
2009 - BC638

Abstract: BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
Text: BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications · Complement to , =50MHz © 2009 Fairchild Semiconductor Corporation BC638 Rev. C3 100 MHz www.fairchildsemi.com 1 BC638 - PNP Epitaxial Silicon Transistor March 2009 BC638 - PNP Epitaxial Silicon Transistor , . C3 www.fairchildsemi.com 3 BC638 - PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC638 - PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58


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PDF BC638 BC637 BC638 BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
2005 - BC638

Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and , www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1 , ], COLLECTOR-BASE VOLTAGE BC638 Rev. C2 3 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC638 PNP Epitaxial Silicon Transistor Mechanical Dimensions , 5 BC638 Rev. C2 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor TRADEMARKS


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PDF BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
2001 - BC635 ECB

Abstract: BC638
Text: 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , : BC638 : BC640 Collector-Emitter Voltage : BC636 : BC638 : BC640 VCEO Collector-Emitter Voltage : BC636 : BC638 : BC640 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current Peak Collector Current , Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC636 : BC638 /BC640 : All Test Condition IC= -10mA, IB=0 Min. -45 -60 -80 VCB= -30V


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638
2001 - 24825

Abstract: BC639 Philips BC636 BC640 BC638-16 BC638 BC637 BC636-16 BC636-10 BC636
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638 ; BC640 PNP medium , Semiconductors Product specification PNP medium power transistors BC636; BC638 ; BC640 FEATURES , handbook, halfpage PNP medium power transistor in a TO-92; SOT54 plastic package. NPN complements , BC636 -45 V - -60 V BC640 - -100 V BC636 - -45 V BC638 - -60 V BC640 VCEO - BC638 - -80 V collector-emitter voltage open base


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PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 Philips BC636 BC640 BC638-16 BC638 BC636-16 BC636-10 BC636
1997 - st bc638

Abstract: bc640 BC639 BC638 BC637 BC636-10 BC636 BC635 bc638-10 BC635 application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638 ; BC640 PNP medium , transistors BC636; BC638 ; BC640 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage , and video amplifiers. 1 handbook, halfpage DESCRIPTION PNP medium power transistor in a TO , collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter - BC636 -45 V BC638 , base BC636 BC638 - -60 V BC640 - -80 V - -1.5 A W ICM peak


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PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. st bc638 bc640 BC639 BC638 BC636-10 BC636 BC635 bc638-10 BC635 application note
1999 - bc640

Abstract: BC639 BC638-16 BC638 BC637 BC636-16 BC636-10 BC636 BC635 BC635 TRANSISTOR E C B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638 ; BC640 PNP medium , Semiconductors Product specification PNP medium power transistors BC636; BC638 ; BC640 FEATURES , DESCRIPTION PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and , V BC638 VCEO - -60 V BC640 - -100 V collector-emitter voltage open base BC636 - -45 V BC638 - -60 V BC640 - -80 V - -5 V


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PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 BC639 BC638-16 BC638 BC636-16 BC636-10 BC636 BC635 BC635 TRANSISTOR E C B
2006 - transistor c63816

Abstract: c63816 c638 transistor c63816 transistor BC638 14046 SC-43A BCX55 BCP55 BCP52
Text: BC638 ; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 06 - 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips JEITA JEDEC BC638 [2 , VCE = -2 V; IC = -150 mA 100 - 250 BC638 ; BCP52; BCX52 Philips Semiconductors 60 V , BC638 ; BCP52; BCX52 Philips Semiconductors 60 V, 1 A PNP medium power transistors 3. Ordering


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PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 transistor c63816 c63816 c638 transistor c63816 transistor BC638 14046 SC-43A BCX55 BCP55 BCP52
Not Available

Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · C om , itter Voltage at R be =1 Kohm C ollector Em itter Voltage BC636 BC638 BC640 BC636 BC638 BC640 BC636 BC638 BC640 Sym bol VcER Rating -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -100 1 150 -65 , Voltage : BC636 : BC638 : BC640 C ollector C ut-off C urrent Em itter C ut-off C urrent DC C urrent Gain , STATIC CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR _1 -3 - 5 -1 0 - 30 - 50 - 1 0 0


OCR Scan
PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640
2002 - transistor bC640 OF CDIL

Abstract: BC639 bc639 npn NPN, PNP for 500ma, 30v BC640 BC635 TRANSISTOR E C B BC638 BC637 BC636 BC635
Text: Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 , Complementary PNP Transistors BC636, BC638 , BC640 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise , BC637 BC638 BC639 BC640 45 45 60 60 5.0 1.0 800 6.4 2.75 22 80 80 PD UNIT , , VCE=2V IC=500mA,IB=50mA BC635 BC636 >45 >45 BC637 BC638 >60 >60 BC639 BC640 >80 >80 , PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic


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PDF QSC/L-000019 BC635 BC637 BC639 BC636 BC638 BC640 BC636, BC638, transistor bC640 OF CDIL BC639 bc639 npn NPN, PNP for 500ma, 30v BC640 BC635 TRANSISTOR E C B BC638 BC637 BC636 BC635
2004 - BC636

Abstract: BC638 BC640
Text: TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640
2002 - BC636

Abstract: BC638 BC640
Text: TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640
1999 - BC635

Abstract: BC636 BC638 BC640
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Collector , : BC638 : BC640 : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 Emitter Base Voltage Collector , Characteristic Symbol Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off , BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640
2007 - C63816

Abstract: transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC638 BCP52 BCP55
Text: BC638 ; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 07 - 26 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC638 [2 , hFE selection -16 VCE = -2 V; IC = -150 mA 100 - 250 BC638 ; BCP52; BCX52 NXP , B.V. 2007. All rights reserved. Rev. 07 - 26 June 2007 2 of 15 BC638 ; BCP52; BCX52 NXP


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PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 C63816 transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BCP52 BCP55
2006 - 639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
Text: For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC , CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VEBO IE=10µA, IC=0 Emitter , =500mA Output Capacitance MAX VCE=2V, IC=150mA BC635/BC636 BC637/ BC638 BC639/BC640 Group-10 Group


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PDF BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
2000 - bc640

Abstract: Diode bc640 BC636 BC638
Text: TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 bc640 Diode bc640 BC636 BC638
2001 - BC636

Abstract: BC638 BC640
Text: TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640
2006 - Not Available

Abstract: No abstract text available
Text: For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , PD BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W , SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VEBO , / BC638 BC639/BC640 Group-10 Group-16 DYNAMIC CHARACTERISTICS DESCRIPTION Transistors Frequency


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PDF BC635, BC636, 640Rev 180712E C-120
Not Available

Abstract: No abstract text available
Text: For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , PD BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W , SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VEBO , / BC638 BC639/BC640 Group-10 Group-16 DYNAMIC CHARACTERISTICS DESCRIPTION Transistors Frequency


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PDF BC635, BC636, 640Rev 030106E C-120
NPN Silicon Epitaxial Planar Transistor to92

Abstract: BC639-BC640 Transistor BC637 or BC639 BC638 BC639 BC637 transistor C 639 W Transistor S 637 T transistor bC640 OF CDIL 639 TRANSISTOR PNP
Text: For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 UNIT V V V A mW mW/ºC W W mW/ºC , CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/BC636 BC637/ BC638 BC639/BC640 VEBO IE=10µA, IC=0 Emitter , =500mA Output Capacitance MAX VCE=2V, IC=150mA BC635/BC636 BC637/ BC638 BC639/BC640 Group-10 Group


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PDF BC635, BC636, 640Rev 030106E C-120 NPN Silicon Epitaxial Planar Transistor to92 BC639-BC640 Transistor BC637 or BC639 BC638 BC639 BC637 transistor C 639 W Transistor S 637 T transistor bC640 OF CDIL 639 TRANSISTOR PNP
BC640

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640   , Value -45 -60 -100 -45 -60 -80 -5.0 -1.0 -100 -65 to +150 -65 to +150 BC636 BC638 BC640 BC636 BC638 BC640 Emitter-Base Voltage Collector Current Base Current Junction Temperature , ) VBE(on) fT Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) BC636 BC638 BC640 Collector , =-2Vdc, IC=-5mAdc) DC Current Gain (VCE=-2Vdc, IC=-150mAdc) BC636-10 BC636-16, BC638 ,BC640 DC Current


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PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC640
2005 - BC640-16

Abstract: BC640 BC64 BC638G BC640ZL1G BC640ZL1 BC640G BC638 BC638ZL1G BC638ZL1
Text: BC638 , BC640, BC640-16 High Current Transistors PNP Silicon Features · Pb-Free Packages are , Voltage Value VCEO BC638 BC640 Collector-Base Voltage Vdc -60 -80 VCBO BC638 BC640 , Publication Order Number: BC638 /D BC638 , BC640, BC640-16 ORDERING INFORMATION Device Package , -92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box BC638 BC638G BC638ZL1 BC638ZL1G BC640 , BC638 BC640 Vdc V(BR)CBO BC638 BC640 Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC =


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PDF BC638, BC640, BC640-16 BC638 BC640 BC638/D BC640-16 BC640 BC64 BC638G BC640ZL1G BC640ZL1 BC640G BC638 BC638ZL1G BC638ZL1
2001 - bc638 equivalent

Abstract: bc640 equivalent bc636
Text: BASE 1 EMITTER BC636 BC638 BC640 1 2 3 MAXIMUM RATINGS Rating Collector ­ Emitter Voltage , Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC636 ­45 ­45 BC638 ­60 ­60 , CHARACTERISTICS Collector ­ Emitter Breakdown Voltage* (IC = ­10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO - - - - ­100 ­10 nAdc µAdc ­45 ­60 ­80 ­5.0 - - - - - - , 2.0%. Motorola Small­Signal Transistors, FETs and Diodes Device Data 2­139 BC636 BC638 BC640


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PDF BC636 BC638 BC640 BC636 BC638 226AA) bc638 equivalent bc640 equivalent
1996 - bc638 motorola

Abstract: No abstract text available
Text: Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS , BC638 BC640 Vdc V(BR)CBO BC636 BC638 BC640 Emitter – Base Breakdown Voltage (IE = â , Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC636 BC638 BC640 , ) hFE BC636 BC638 BC640 (IC = –500 mA, VCE = –2.0 V) — Collector – Emitter , Cycle 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC636 BC638


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PDF BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola
1996 - BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Text: Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS , , IE = 0) V(BR)CEO BC636 BC638 BC640 Vdc V(BR)CBO BC636 BC638 BC640 Emitter ­ Base , BC636 BC638 BC640 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , , VCE = ­2.0 Vdc) hFE BC636 BC638 BC640 (IC = ­500 mA, VCE = ­2.0 V) - Collector ­ , Small­Signal Transistors, FETs and Diodes Device Data BC636 BC638 BC640 500 ­1000 ­200 VCE = ­2 V


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PDF BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
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