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Part Manufacturer Description Datasheet Download Buy Part
SN75107BN Texas Instruments Dual Line Receiver 14-PDIP 0 to 70
CD40107BPW Texas Instruments CMOS Dual 2-Input NAND Buffer/Driver 8-TSSOP -55 to 125
SN75107BDRG4 Texas Instruments Dual Line Receiver 14-SOIC 0 to 70
CD40107BM96 Texas Instruments CMOS Dual 2-Input NAND Buffer/Driver 8-SOIC -55 to 125
SN75107BDRE4 Texas Instruments Dual Line Receiver 14-SOIC 0 to 70
TPIC0107BDWPRG4 Texas Instruments PWM Control Intelligent H-Bridge 20-SO PowerPAD

bc 107b transistor Datasheets Context Search

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BC 109 Transistor

Abstract: transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
Text: DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5 , -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300


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PDF O-237 BC 109 Transistor transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
BC 109C transistor

Abstract: bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B transistor BC 368 transistor BC 108C transistor BC 106 CIL TRANSISTOR BC 177A bc 107b transistor
Text: 0.050 .050 0.05 60 NPN D R IV E R /P R E -A M P L IF IE R T R A N S IS T O R S BC 107 BC 107 A BC 107B BC BC BC BC 108 108A 108B 108C 45 45 45 20 20 20 20 20 20 20 50 50 50 30 30 30 30 30 30 30 6 6 6 5 , -18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 BC 109 BC 109B BC 109C 300 300 J300 · PNP D R IV E R /P R E -A M P L IF IE R T R A N SIST O R BC 177 BC 177A BC 177B BC 178 BC 178A BC 178B BC 179 BC 179A BC 179B 45 45 45 25 25 25 20 20 · 20 50 50 50 30 30 30 25 25 25 5 5 5 5 5 5 5 5 5 75


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PDF QQDDD13 lo-32 BC 109C transistor bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B transistor BC 368 transistor BC 108C transistor BC 106 CIL TRANSISTOR BC 177A bc 107b transistor
2003 - GS8321Z18E-133

Abstract: GS8321Z18E-150 GS8321Z18E-166 GS8321Z18E-200 GS8321Z18E-225 GS8321Z18E-250 GS8321Z32E-250
Text: . Parameter Synopsis Pipeline 3-1-1-1 Flow Through 2-1-1-1 Rev: 1.07b 3/2009 tKQ tCycle Curr , Body-1.0 mm Bump Pitch Rev: 1.07b 3/2009 2/38 Specifications cited are subject to change , 4 5 6 7 8 9 10 11 A NC A E1 BC BB E3 CKE ADV A , Bump Pitch Rev: 1.07b 3/2009 3/38 Specifications cited are subject to change without notice , 6 7 8 9 10 11 A NC A E1 BC BB E3 CKE ADV A A NC


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PDF GS8321Z18/32/36E-250/225/200/166/150/133 165-Bump 8321Zxx GS8321Z18E-133 GS8321Z18E-150 GS8321Z18E-166 GS8321Z18E-200 GS8321Z18E-225 GS8321Z18E-250 GS8321Z32E-250
NBC107

Abstract: PH BC107 BC 109B BC107 Tr BC109
Text: n t ga in BC 107A; BC 108A BC 107B ; BC 108B; BC 109B BC 108C ; BC 109C lc = 1 o n A ; V CE = 5 V , ga in BC 107A; BC 108A BC 107B ; BC 108B; BC 109B BC 108C ; BC 109C 180 290 520 90 200 70 0 900 62 , n o is e fig u re BC 107A; BC 108A BC 107B ; BC 108B; BC 108C BC 109B; BC 109C - - 10 dB , 7 . QUICK REFERENCE DATA SYMBOL VcBO PARAMETER c o lle c to r-b a s e v o lta g e BC107 BC , c o lle c to r-e m itte r v o lta g e BC107 BC 108; B C 109 45 20 200 300 V V mA mW ICM


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PDF BC107; BC108; BC109 117047/00/04/pp8 NBC107 PH BC107 BC 109B BC107 Tr BC109
KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: 177B BC 177B BC 179C BC 179C BC 107B BC 107B BC 414B BC 264A 2N2222A 2N2222A BC303 KT3107B KT3107I , 150 151 G£ Gp Gp Gn Gp Gp G£ Gp Gp * GC *118e KT 3107B BC GC GC AC G C AC BC GC GC BC 313-16 3 0 1 dte , AC 153K AC 160 AC 160ge G£ Gp Gp Gp . G P BC 313-16 GC 301dte AC 188K GC 118d GC 118d GC 11 8e , 321A GF 147 KD 617 KD 617 KD 6 m KD 617 2N 3731 2N 3731 2N 3731 2N 2905A BC BC BC BC BC j BC ; bc BC BC SC BC BC BC SC SC BC BC BD BD BD SC 60 40 80 60 60 80 40 20 B P fT (MHz) (W) I (A


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transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
1998 - IDG 600

Abstract: STMicroelectronics Krypton ST952 "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST75951 ST952TQF7 TQFP32 VTAC 4
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract: STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 ST75951 ST952 Krypton isolation D6510
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 Krypton isolation D6510
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140


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TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2000 - transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 TR BC 548 transistor c202 TI 121 Transistor opa660 pspice transistor directory
Text: consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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1996 - Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
Text: , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , Impedance Reverse Voltage Transfer Ratio Small Signal Current Gain Output Admittance BC 146R BC


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
2002 - transistor C546

Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: -002 (9.00).xls TOTAL QTY 7 7 3 9 Manufacturer Name BC Components BC Components BC Components BC , -00 5% PA 10R Page 1 of 5 1 7 3 1 2 9 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 -00 5% PA 27R DCT 0603 -00 5% PA 47R0 DCT 0603 - 00 5 , 0 1 1 2 3 2 19 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 - 00 5% PA 1k20 DCT 0603 -00 5% PA 2k2 DCT 0603 -00 5% PA 3k30 DCT 0603


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PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16 , -551100FT-1 NK4H.125W1%+/100PPM110R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R17, 19, 20, 28, 30, 31


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PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
2007 - l6599

Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
Text: voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , imposed by these zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the , Safety Ceramic Disk Capacitor Murata C12 100 nF 50 V 1206 SMD Cercap General Purpose BC , 1206 SMD Cercap General Purpose BC Components C15 100 pF 100 V 0805 SMD Cercap General Purpose BC Components C16 1 µF 25 V 1206 SMD Cercap General Purpose BC Components C17


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PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
2001 - TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Epitaxial Silicon Transistor Analog and Mixed Signal Contents Discrete Features | Applications | Product , -92 TO-92 TO-92 3 3 3 N/A N/A $Y&3 BC 558B $Y&3 BC558 N/A N/A N/A N/A N/A BULK TAPE REEL BULK back to top , $0.07 TO-92 3 $Y&3 BC 558C BULK * 1,000 piece Budgetary Pricing back to top space


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
ALG TRANSISTOR

Abstract: transistor PNP ALG transistor BC 368
Text: DOQ'ÎBfl? 7 IÂLG6 BC 369 _ r - a i- a a Silicon PNP Epitaxial Planar Transistor , Zigzag folding in mm BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor , power dissipation · Low saturation voltage · Complementary to BC 368 Dimensions in mm · High DC forward , TELEFUNKEN ELECTRONIC 17E » A 'tëo tn b Q G cn a a s s ALG£ BC 369 Min. Characteristics Typ , transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape s) Additional


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PDF 15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368
SOT-23 Marking code MU

Abstract: TRANSISTOR bC 369 TRANSISTOR BC transistor BC 368
Text: DOORSÛS BC 368 T -a v a 3 Silicon NPN Epitaxial Planar Transistor Applications: Complementary , Low saturation voltage · Complementary to BC 369 Dimensions in mm · High DC forward current transfer , 2522 E -ll TELEFUNKEN ELECTRONIC 17E D BC 368 Characteristics r amb " 25 0 C, unless , together with a paper film. 7.1.1. Order Numbers Add the taping-code to the order number. Example; BC 238 C Order-No. of Type Code for TO-92 Transistors Orientation of transistor on ta p e 1 1 Additional marking for


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PDF JEDECT092Z SOT-23 Marking code MU TRANSISTOR bC 369 TRANSISTOR BC transistor BC 368
BCW General Purpose Transistor

Abstract: l9902
Text: BCW60A/B/C/D GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation Storage Tem perature Sym bol V cbO V cE O V ebo Rating 32 32 5 100 350 150 Unit V V V mA mW °C lc Pc T stg 1. Base 2. E m itter 3. C , Gain BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D C


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PDF BCW60A/B/C/D BCW General Purpose Transistor l9902
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