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sot 37

Abstract: BF970 SOT-37 DDB7712 GDE7711 Self-Oscillating mixer BF-970
Text: N AUER PHILIPS/DISCRETE blE D bbS3131 GDE7711 404 BF970 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage (open emitter) -vCB0 max. 40 V Collector-emitter voltage (open base) -vCE0 max. 35 V Collector current (d.c.) -"c max. 30 mA Total power , Respective Manufacturer N AMER PHILIPS/DISCRETE BF970 J blE D bbS3131 DDB7712 34D IAPX RATINGS


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PDF bbS3131 GDE7711 BF970 OT-37. sot 37 BF970 SOT-37 DDB7712 Self-Oscillating mixer BF-970
BLV101B

Abstract: mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817
Text: bbS3131 ODE^Slb Ebb IAPX Product specification UHF power transistors N AMER PHILIPS/DISCRETE BLV101A , Copyrighted By Its Respective Manufacturer Philips Semiconductors bbS3131 ODE^Slb Ebb IAPX Product , bbS3131 ODE^Slb Ebb IAPX Product specification BLV101A/BLV101B N AMER PHILIPS/DISCRETE hlE D , This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors bbS3131 ODE^Slb Ebb


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PDF OT273 OT273 BLV101A/BLV101B BLV101B WCW71 MCA973 mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817
philips resistor 2322

Abstract: 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322
Text: Philips Semiconductors ■bbS3131 DD2TT27 T 41 HiAPX Product specification HF/VHF power MOS transistor BLF241E —^— N AMER PHILIPS/DISCRETE blE D FEATURES • High power gain • Easy power , Semiconductors ■bbS3131 DD2TT2 T 41 HiAPX Product specification HF/VHF power MOS transistor BLF241E N AUER , Manufacturer Philips Semiconductors ■bbS3131 DD2TT31 T 41 HiAPX Product specification HF/VHF power MOS , Material Copyrighted By Its Respective Manufacturer Philips Semiconductors_■bbS3131 DD2TT33 T 41 HiAPX


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PDF bbS3131 DD2TT27 BLF241E O-39/3) MBG072 MSB009- MBA379 philips resistor 2322 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322
SOD-61

Abstract: Avalanche diod eht of monitor 80061 80061 L by617 eht transformer used in color tv monitor EHT philips eht circuit very fast high voltage diodes
Text: N AflER PHILIPS/DISCRETE hlE D ■bbS3131 0D2bSD4 SIS «APX Philips Semiconductors_Product specification EHT avalanche very fast DVC„ , DTD I f soft-recovery diodes FEATURES • Soft-recovery (non snap-off) characteristics • Capable of absorbing avalanche energy e.g. during flashover in picture tubes • Low reverse switching losses. DESCRIPTION EHT rectifier diodes in hermetically-sealed , Qs, t,r and t,. January 1992 480 N AMER PHILIPS/DISCRETE blE J> ■bbS3131 DDSbSOfl IbD »APX


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PDF bbS3131 feb53W SOD-61 Avalanche diod eht of monitor 80061 80061 L by617 eht transformer used in color tv monitor EHT philips eht circuit very fast high voltage diodes
4312 020 36642

Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
Text: N AMER PHILIPS/DISCRETE b^E J> ■bbS3T31 OGi^GaE b47 BLV38 LIE D bbS3131 DDE'ìQa'ì TT1 ■APX A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor , Its Respective Manufacturer N AMER PHILIPS/DISCRETE LIE D bbS3131 DDE'ìQa'ì TT1 ■APX VHF linear , N AMER PHILIPS/DISCRETE b=JE » VHF linear push-pull power transistor bbS3131 □ □2ci03b «APX , D bbS3131 DDE'ìQa'ì TT1 ■APX BLV38 Jl List of components C1 = C2 = C6 = 2 x 27 pF (500 V


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PDF bbS3T31 BLV38 bbS3131 4312 020 36642 transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
BGY47A

Abstract: LQ1102
Text: Manufacturer I I N AMER PHILIPS/DISCRETE blE D ■bbS3131 Q030E41 1TM ■APX CHARACTERISTICS Zs = Z[_ = , Copyrighted By Its Respective Manufacturer / May 1991 57 N AHER PHILIPS/DISCRETE BGY47A blE D J bbS3131 , LIE » ■bbS3131 ÜD30243 T77 BGY47A IAPX 4 PL (W


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PDF BGY47A OT181) BGY47A LQ1102
marking 3t1

Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER PHILIPS/DISCRETE bTE ]> ■bbS3131 0GBbb77 5ET ■APX BYW54 to 56 A CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose applications in telephony equipment , Copyrighted By Its Respective Manufacturer N APIER PHILIPS/DISCRETE b'ìE D ■bbS3131 0Q2bbfl4 7b1 WAPX


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PDF bbS3131 0GBbb77 BYW54 OD-57. BYW55 BYW56 7Z88032 marking 3t1 88034 BYW56
BY709

Abstract: BY708 BY707 BY707 diode BY707 philips
Text: bTE D ■bbS3131 QQBbSEl bT4 ■APX BY707 BY708 BY709 N AUER PHILIPS/DISCRETE A SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended for use in high-voltage applications such as the high-voltage supply of television receivers and monitors. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes should be used in a , avoid excessive dissipation. 498 September 1985 ■bbS3131 00BbS23 477 ■APX Silicon E.H.T


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PDF bbS3131 BY707 BY708 BY709 BY707 BY709 BY707 diode BY707 philips
BF115

Abstract: BFS19 Philips MARKING CODE BF115 BFS18 00252-B
Text: ■bbS3131 00252b? Obi mAPX N AMER PHILIPS/DISCRETE b?E T> yv BFS18 BFS19 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for general purpose and h.f. applications in thick and thin-film circuits. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 30 V Collector-emitter voltage (open base) vCE0 max. 20 V Collector , Copyrighted By Its Respective Manufacturer ■I bbS3131 DQ25271 STT Silicon planar epitaxial transistors -


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PDF bbS3131 00252b? BFS18 BFS19 BFS18 BF115 BFS19 Philips MARKING CODE BF115 00252-B
Diode smd code PJ 04

Abstract: diode SMD MARKING CODE A6 smd diode code pj smd diode marking a6 BAS16W smd diode code a6 marking code a6 smd diode marking code a6 smd diode Lf smd marking code pJ
Text: N AMER PHILIPS/DISCRETE bTE D bbS3131 GOSb^Sb 547 IAPX Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode BAS16W FEATURES • Plastic SMD envelope • High switching speed • General application. DESCRIPTION Epitaxial high-speed switching diode in a small rectangular SMD SOT323 envelope. The diode is intended for high-speed switching applications in surface , Respective Manufacturer AMER PHILIPS/DISCRETE b^E T> ■bbS3131 0(32^57 4Û3 HAPX Philips Semiconductors


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PDF bbS3131 BAS16W OT323 Diode smd code PJ 04 diode SMD MARKING CODE A6 smd diode code pj smd diode marking a6 BAS16W smd diode code a6 marking code a6 smd diode marking code a6 smd diode Lf smd marking code pJ
BSS68

Abstract: APX-100 k 30 transistor
Text: AMER PHILIPS/DISCRETE BSS68 bTE ]> Jl bbS3131 □DE7Û73 b3E ■APX ratings Limiting values , PHILIPS/DISCRETE BSS68 J blE » ■bbS3=131 0DE7Ô75 HQS ■APX 100 T) (°C) 150 Fig. 4. 484 June


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PDF BSS68 BSS68 APX-100 k 30 transistor
sot323 marking code VL

Abstract: PMSS3906 transistor p06
Text: Material Copyrighted By Its Respective Manufacturer hilips Semiconductors ■bbS3131 0025 7^5 «APX N , – bbS3131 DOSSIER L21 HAPX N AMER PHILIPS/DISCRETE b7E D PNP general purpose transistor Product


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PDF PMSS3906 OT323 MAM096 2St131 sot323 marking code VL PMSS3906 transistor p06
BGY45B

Abstract: No abstract text available
Text: /DISCRETE i ObE D bbS3131 DD13B7H 3 860 01036 BGY45B V.H.F. broadband power module y v . , /DISCRETE j 860 ObE D 0 T o37 ■bbS3131 0013275 5 f " b 7 "- 7 y m BGY45B so Pl


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PDF BGY45B bbS3131 7Z94276 BGY45B
BDX69

Abstract: z664 BDX68 BDX68A BDX68B BDX68C BDX69A BDX69B BDX69C T3329
Text: II . J N AMER .PHILIPS/DISCRETE SSE D ■bbS3131 0020013 T ■BDX69; 69A BDX69B; 69C IJl uuc JL T -33-a? DARLINGTON POWER TRANSISTORS N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3' envelope. P-N-P complements are BDX68, BDX68A, BDX68B and BDX68C. QUICK REFERENCE DATA Collector-base voltage (open emitter) Collector-emitter voltage (open base , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BDX69; 69A BDX69B; 69C 2SE D bbS3131


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PDF bbS3131 BDX69; BDX69B; -33-a? BDX68, BDX68A, BDX68B BDX68C. BDX69 z664 BDX68 BDX68A BDX68C BDX69A BDX69B BDX69C T3329
philips ferrite 4b1

Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
Text: Philips Semiconductors bbS3131 00324^2 2G2 MAPX Product specification Hybrid integrated VHF/UHF wideband amplifier DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as a general purpose amplifier for VHF and UHF applications. OM2063 N AMER PHILIPS , Semiconductors ■bbS3131 00324^5 Til ■APX Product specification Hybrid integrated VHF/UHF niui9nfiq


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PDF bbS3131 OM2063 philips ferrite 4b1 philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
BUW12AF

Abstract: BUW12F BUW12A
Text: N AMER PHILIPS/DISCRETE blE ]> ■bbS3131 002053^ blT I BUW12F BUW12AF IAPX SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA MECHANICAL DATA Fig. 1 SOT 199. BUW12F BUW12AF Collector-emitter voltage , bbS3131 GQ2flS4D 330 ■APX BUW12F BUW12AF J V RATINGS


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PDF bbS3131 BUW12F BUW12AF OT199 BUW12F BUW12AF BUW12A
BF256A

Abstract: BF256B BF256C BF256B1 BF256
Text: 1984 69 bbS3131 □D3S7E0 S3G This Material Copyrighted By Its Respective Manufacturer BF256A to C , to C IO2 f (MHz) 103 Fig. 11 7Z62909 IO2 f (MHz) IO3 Fig. 12 March 1984 73 bbS3=131 0035724


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PDF BF256A 003572b BF256B BF256C BF256B1 BF256
BUK456

Abstract: BUK456-1OOOA BUK456-1000A BUK456-1000B T0220AB
Text: By Its Respective Manufacturer N AMER PHILIPS/DISCRETE ESE D ■bbS3131 0020541 2 m PowerMOS , Manufacturer N AflER PHILIPS/DISCRETE SSE ]> ■bbS3131 003DS4E M ■PowerMOS transistor BUK456


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PDF BUK456-1000A BUK456-1000B BUK456 -1000A -1000B BUK456-1OOOA BUK456-1000A BUK456-1000B T0220AB
Philips 2222 capacitor

Abstract: Transistor 2222 431202036640 choke npn 2222 transistor philips carbon film resistor bt53
Text: – bbS3131 0028810 34b MAPX Philips Semiconductors Product specification UHF power transistor BLU15/12 , – bbS3131 GOBflfllS ■APX Product specification UHF power transistor BLU15/12 MCB117


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PDF BLU15/12 OT122 -SOT122A Philips 2222 capacitor Transistor 2222 431202036640 choke npn 2222 transistor philips carbon film resistor bt53
by617

Abstract: eht rectifier monitor EHT diode Cathode indicated by blue band eht of monitor ee4 diode
Text: N AflER PHILIPS/DISCRETE hlE T> m bbS3131 D02bSD4 5IS «APX Philips Semiconductors_Product specification EHT avalanche very fast DVe bbS3131


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PDF bbS3131 D02bSD4 D02b507 BY617 by617 eht rectifier monitor EHT diode Cathode indicated by blue band eht of monitor ee4 diode
BLY94

Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Text: N AMER PHILIPS/DISCRETE b'ìE » ■bbS3131 0021750 22T BLY94 IAPX V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every transistor is tested under severe load mismatch conditions. It has a plastic encapsulated stripline package , tSLYy4 blE D bbS3131 002^73^ Ibb IAPX Jl RATINGS Limiting values in accordance with the Absolute


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PDF bbS3131 BLY94 OT-55. Tmb-25 BLY94 vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
B834

Abstract: BFX30 B8344 B7747 B8353 Silicon Epitaxial Planar Transistor philips
Text: N AUER PHILIPS/DISCRETE bTE D ■bbS3131 0027741 141 tsrXäU IAPX A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK REFERENCE DATA Collector-base voltage (open emitter) ~vCBO max. 65 V Collector-emitter voltage (open base) ~vCEO max. 65 V Collector current (peak value) -'cm max. 600 mA Total power dissipation up to Tamt, = , Manufacturer N AMER PHILIPS/DISCRETE blE T> ■bbS3131 002774b 723 «APX BFX30 -ICBO TYPICAL VARIATION OF


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PDF bbS3131 100mA B834 BFX30 B8344 B7747 B8353 Silicon Epitaxial Planar Transistor philips
Not Available

Abstract: No abstract text available
Text: ?25l. 1 9fs * \ bbS3131 003S73fl 770 January 1989 89 BFQ10 to 16 JV C H A R A C T E R , 150 T j (OC) 200 ‘A / ' December 1972 bbS3131 0D3S740 32^ 91 BFQ10 to 16 J 7,5


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PDF BFQ10 BFQ10 bbS3131 0D3S740 003S742
BYX97-300

Abstract: RECTIFIER DIODES PHILIPS BYX BYX97 BYX97-300R
Text: /DISCRETE 2SE D T-01-19 bbS3131 0052ôSb 4 60 7Z72282,1 single phase: a = 1,6 3-phase : a = 1,75 a 6 , / / November 1975 657 BYX97 SERIES N AMER PHILIPS/DISCRETE SSE D E3 bbS3131 Q025fi5fl fi ¿th j-mb (°C


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PDF BYX97 BS9331-F130 BYX97-300 BYX97-300R 1600R. BYX97 bbS3131 Q025fi5fl T-01-19 RECTIFIER DIODES PHILIPS BYX
BUX46

Abstract: BUX46A
Text: PHILIPS/DISCRETE BUX46 BUX46A 2SE D bbS3131 DOnOMb 1 T—33—13 RATINGS Limiting values in , tracer!. 526 July 1988 if N AflER PHILIPS/DISCRETE 5SE D ■bbS3131 DDn047 □ ■Silicon diffused


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PDF BUX46 BUX46A T-33-J3 BUX46A
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