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Part Manufacturer Description Datasheet Download Buy Part
LTC3803IS6-3#TRM Linear Technology LTC3803-3 - Constant Frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3803HS6-5#TRMPBF Linear Technology LTC3803-5 - Constant Frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C
LTC3873ETS8#TRMPBF Linear Technology LTC3873 - No RSENSE Constant Frequency Current Mode Boost/Flyback/SEPIC DC/DC Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC3803ES6-5 Linear Technology LTC3803-5 - Constant Frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3803IS6-5#TRPBF Linear Technology LTC3803-5 - Constant Frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3803HS6-3#TRMPBF Linear Technology LTC3803-3 - Constant Frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 125°C

avalanche mode transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - ZTX415

Abstract: AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
Text: Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction to Characteristics, Performance and Applications Neil Chadderton Introduction Avalanche mode , the important parameters of an avalanche mode transistor with particular reference to the ZTX415 , / high current pulse generators. The Zetex Semiconductors ZTX415 is an avalanche transistor that , inductance designs. This Application Note outlines the principle of avalanche mode operation, gives


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PDF ZTX415 NS-25, AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
2002 - smps circuit diagram of 300W

Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
Text: Avalanche Rating Avalanche energy capability is the measure of a transistor 's ability to handle energy in the drain to source avalanche breakdown mode , in which the transistor acts ideally as a high power , Avalanche Rating and the VBE junction potential decreases. For this reason, though a MOSFET transistor may , 3 SMPS Topologies and Avalanche A variety of converter topologies are used in switch mode , Transistor Selection Topology Avalanche possible? CoolMOSTM PFC Boost Converter No 600 V


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PDF AN-CoolMOS-04 2002-Sep. smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps AN-CoolMOS-04 07n60 mosfet circuit diagrams 07N60 ZVT Full bridge transformer IGBT 500 Watt Phase Shifted ZVT Power Converter infineon cool MOSFET dynamic characteristic test H-bridge 24 VOLT 80 AMP smps
1995 - AN601

Abstract: SMP30N10 john worman bipolar transistor tester
Text: transistor . The semiconductor industry defines this ruggedness as the capability to withstand avalanche , active or passive. The first, or active mode , results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode , results when the instantaneous chip , parasitic npn bipolar transistor and causes catastrophic thermal runaway. In either case, the MOSFET is destroyed. The passive mechanism is, therefore, identified as that failure mode not directly attributed to


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PDF AN601 ED-29, HDL-TR-1978 AN601 SMP30N10 john worman bipolar transistor tester
5510E UIS tester

Abstract: bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
Text: labelled as either active or passive. The first, or active mode , results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode , results when the , mode in the vertical MOSFET structure is offered in Figure 3. The initial avalanche current at , the critical avalanche current required to excite the parasitic bipolar transistor . Blackburn[8 , . Dunning The evolution of the power MOSFET has resulted in a very rugged transistor . The semiconductor


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PDF AN601 15-Feb-94 5510E UIS tester bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
1996 - SMP30N10

Abstract: MOSPOWER Design 1983 bipolar transistor tester avalanche mode transistor US ARMY TRANSISTOR CROSS SILICONIX siliconix FET DESIGN uis test AN601 MOSPOWER Design Data Book 1983 5510E UIS tester
Text: mechanisms are labelled as either active or passive. The first, or active mode , results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode , results , mode not directly attributed to avalanche currents. Whenever current through an inductance is , avalanche . * The Thermal Effect - The "Passive" Mode . During UIS, as the MOSFET is subjected to , . Dunning The evolution of the power MOSFET has resulted in a very rugged transistor . The semiconductor


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PDF AN601 15-Feb-94 SMP30N10 MOSPOWER Design 1983 bipolar transistor tester avalanche mode transistor US ARMY TRANSISTOR CROSS SILICONIX siliconix FET DESIGN uis test AN601 MOSPOWER Design Data Book 1983 5510E UIS tester
2005 - 70572

Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
Text: either active or passive. The first, or active mode , results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode , results when the instantaneous , , IORp+, activates this bipolar transistor .[4,5,6] The accepted model representing this failure mode in , The evolution of the power MOSFET has resulted in a very rugged transistor . The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to


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PDF AN601 15-Feb-94 70572 bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
1997 - 5B SMD TRANSISTOR

Abstract: SMD transistor 5c transistor 5c smd package smd transistor GY 5B smd transistor data transistor smd 5B to 220 smd 5c smd transistor 5b transistor smd to-220 smd
Text: permissible junction temperature is 150 °C. The transistor is operated in avalanche mode with a pulse current , temperature of the transistor must not be exceeded here. If turn-off takes place in hard mode with an , the new S-FETs, in which avalanche energy released in the transistor coincides with active zener , semiconductor depend on its area operated in avalanche mode . If the voltage is limited by active zener , excellent quality. A homogeneous cell design combined with spacer technology ensures high avalanche


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PDF P-DSO-28 products/36/36334 5B SMD TRANSISTOR SMD transistor 5c transistor 5c smd package smd transistor GY 5B smd transistor data transistor smd 5B to 220 smd 5c smd transistor 5b transistor smd to-220 smd
1999 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1
Text: enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has , specification Dual N-channel enhancement mode TrenchMOSTM transistor THERMAL RESISTANCES SYMBOL PARAMETER , enhancement mode TrenchMOSTM transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25°C, per , N-channel enhancement mode TrenchMOSTM transistor PHN203 Drain Current, ID (A) 10 9 8 7 6 5 4 3 2 1 0 , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN203 1E-01 Sub-Threshold


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PDF PHN203 PHN203 OT96-1 MOSFET TRANSISTOR SMD MARKING CODE nh catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1
1999 - bsp100

Abstract: SC18
Text: DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' , TrenchMOSTM transistor BSP100 AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the , enhancement mode TrenchMOSTM transistor BSP100 Transconductance, gfs (S) 6 Drain Current, ID (A , Product specification N-channel enhancement mode TrenchMOSTM transistor BSP100 PRINTED CIRCUIT , enhancement mode TrenchMOSTM transistor BSP100 MECHANICAL DATA Plastic surface mounted package


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PDF BSP100 OT223 BSP100 SC18
1999 - MS-012AA

Abstract: PHN210
Text: N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. s2 , N-channel enhancement mode TrenchMOSTM transistor PHN210 REVERSE DIODE LIMITING VALUES AND , enhancement mode TrenchMOSTM transistor PHN210 Transconductance, gfs (S) 6 Drain Current, ID (A , Product specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210 MECHANICAL , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210 DEFINITIONS Data sheet


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PDF PHN210 OT96-1 PHN210 MS-012AA
1999 - MS-012AA

Abstract: PHN203
Text: enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device , N-channel enhancement mode TrenchMOSTM transistor PHN203 THERMAL RESISTANCES SYMBOL PARAMETER , enhancement mode TrenchMOSTM transistor PHN203 REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = , Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor Drain , Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN203


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PDF PHN203 OT96-1 MS-012AA PHN203
2002 - PHN210

Abstract: MS-012AA
Text: N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. s2 , N-channel enhancement mode TrenchMOSTM transistor PHN210 REVERSE DIODE LIMITING VALUES AND , enhancement mode TrenchMOSTM transistor PHN210 Transconductance, gfs (S) 6 Drain Current, ID (A , Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210 MECHANICAL DATA SO8


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PDF PHN210 OT96-1 PHN210 MS-012AA
APT9402

Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
Text: mode results from forward biasing the base emitter junction of the parasitic NPN transistor , turning , in a repetitive avalanche mode and would eliminate necessary components such as snubbers, transient , the repetitive avalanche mode as no wear out mechanism has been identified. Avalanche Failure , Parasitic NPN Transistor too large or the avalanche current high enough the P-N junction will become , device to survive operation in the avalanche mode at a specified current and junction temperature. The


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PDF APT9402 APT9402 amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
1998 - Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , debug mode · Source level debugger for C, PLM and assembler · DOS and Windows software · 24 pin DIP , operation modes. Counter timers have independently programmable clock source and dual mode . All I/Os are , a separate programmable baud-rate generator. All UARTs have wake-up mode for multi-drop support , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Not Available

Abstract: No abstract text available
Text: DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trenchâ , Philips Semiconductors Dual N-channel enhancement mode TrenchMOS™ transistor PHN210 THERMAL , N-channel enhancement mode TrenchMOS™ transistor PHN210 REVERSE DIODE LIMITING VALUES AND , Semiconductors Dual N-channel enhancement mode TrenchMOS™ transistor PHN210 Drain Current, ID (A , Dual N-channel enhancement mode TrenchMOS™ transistor PHN210 Source-Drain Diode Current, IF (A


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PDF PHN210 OT96-1 PHN210 076E03S MS-012AA
irf740 switching 3 phase motor driver

Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 snubber circuit for mosfet push pull IRF640 mosfet transistor equivalent irf740 VDMOS reliability testing report transistor IRF740 IRF540 complementary
Text: . Avalanche energy injection. (Referred to in the text as Mode 1.) 2. Diode recovery dv/dt. (Referred to in , avalanche injection, this failure mode cannot be directly linked to the DC safe operating area (SOA) curves , alternating sections of 'p' and `n' materials: precisely the composition of a bipolar (npn) transistor . The , circuit in detail. What we have is an identifiable parasitic bipolar junction transistor (PBJT) intrinsic to the MOSFET cell structure. If this cellular transistor is turned on in any of the hundreds of


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PDF
1999 - IRF540 smd

Abstract: IRF540 IRF540 application IRF540 application note Application Note of IRF540 IRF540S Applications Note of IRF540 IRF540 cross reference TRANSISTOR SMD MARKING CODE 2g 43118
Text: DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. Applications:· d.c. to d.c. converters · switched mode power supplies · T.V. and computer monitor , Product specification N-channel TrenchMOSTM transistor IRF540, IRF540S AVALANCHE ENERGY LIMITING , to eNews. Description N-channel enhancement mode field-effect power transistor in a plastic , Philips Semiconductors Product specification N-channel TrenchMOSTM transistor IRF540


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PDF IRF540, IRF540S IRF540 O220AB) IRF540S OT404 OT78127 OT404 IRF540 smd IRF540 application IRF540 application note Application Note of IRF540 Applications Note of IRF540 IRF540 cross reference TRANSISTOR SMD MARKING CODE 2g 43118
2000 - MS-012AA

Abstract: PHN210 PHN210T
Text: Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' , enhancement mode TrenchMOSTM transistor PHN210T REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = , enhancement mode TrenchMOSTM transistor PHN210T Transconductance, gfs (S) 6 Drain Current, ID (A , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210T MECHANICAL DATA SO8 , enhancement mode TrenchMOSTM transistor PHN210T DEFINITIONS Data sheet status Objective specification


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PDF PHN210T OT96-1 PHN210T MS-012AA PHN210
SE110N

Abstract: A4032 SE130N SE090N SE005N high hfe transistor SLA7022M FMQG5FM 3gu diode rk 49 diode
Text: input) 17 17 17 18 Low VcE(sat)-High hFE Transistor 18 18 Transistors for Switch Mode Power Supply (For , Transistor Transistors for Audio Am plifier (Single Emitter) Transistors for Switch Mode Power Supply (For AC , Regulator 5 5 Sink Drive Transistor Array with Avalanche Diode Sink Drive Transistor Array (General Purpose , Mount) Triacs Sink Drive Transistor Array with Avalanche Diode 38 38 41 40 33 MOSFET Array (Stepper , Transistor Array with Avalanche Diode Source Drive Transistor Array (General Purpose) Sink Drive Transistor


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PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE090N SE005N high hfe transistor SLA7022M FMQG5FM 3gu diode rk 49 diode
1993 - varistor 472 SUS

Abstract: Transient Voltage Suppression Devices, Harris RFP22N10 355a transistor landis IAS25 rpf22n10 SSD-450 JC-25 AVALANCHE TRANSISTOR
Text: failure mode is a function of avalanche current and junction temperature and not energy related , parasitic bipolar transistor never turns on. The failure is thermally induced. At the start of avalanche , WITH PARASITIC BIPOLAR TRANSISTOR When a unit is in avalanche , the bipolar transistor is in a VCER , avalanche failure resistant. Most semiconductor devices are intolerant of voltage transients in excess of their breakdown rating. Avalanche capable devices are designed to be robust. The Harris MEGAFET


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PDF AN9321 SSD-450) varistor 472 SUS Transient Voltage Suppression Devices, Harris RFP22N10 355a transistor landis IAS25 rpf22n10 SSD-450 JC-25 AVALANCHE TRANSISTOR
2000 - irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 siemens rectifier pwm igbt AN-CoolMOS-02
Text: dissipated on the primary side by the power transistor in avalanche , or by additional protective snubber , losses. The two transistor forward converter is compatible with current mode control, and with the , ) .17 6.3 Single Transistor Forward Converter , .19 6.5 Two Transistor Forward Converter , ) .25 7.3 Single Transistor Forward Converter


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PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 siemens rectifier pwm igbt AN-CoolMOS-02
076E03S

Abstract: No abstract text available
Text: specification Dual N-channel enhancement mode TrenchMOSTM transistor THERMAL RESISTANCES SYMBOL PARAMETER , specification Dual N-channel enhancement mode TrenchMOSTM transistor REVERSE DIODE LIMITING VALUES AND , Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN203 , enhancement mode TrenchMOSTM transistor PHN203 Source-Drain Diode Current, IF (A) PHN203 , Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor MECHANICAL


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PDF PHN203 PHN203 OT96-1 076E03S
Not Available

Abstract: No abstract text available
Text: DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' , Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor , specification N-channel enhancement mode TrenchMOSTM transistor BSP100 0 0.2 0.4 0.6 0.8 1 1.2 , N-channel enhancement mode TrenchMOSTM transistor BSP100 Source-Drain Diode Current, IF (A , N-channel enhancement mode TrenchMOSTM transistor PRINTED CIRCUIT BOARD BSP100 Dimensions in mm


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PDF BSP100 BSP100 OT223 OT223
1n06c

Abstract: 1n06 fuel injector test
Text: MOSFET Transistor Device Data MLD1N06CL Figure 6. Single Pulse Avalanche Energy versus Junction , clamped conduction mode rather than in the more stressful gate-tosource avalanche mode . 4-82 , electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche , 2 DPAK Surface Mount °C UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Single Pulse Drain-to-Source Avalanche Energy Starting T j = 25 C ea s 80 mJ (1) When surface mounted to an FR4 board


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PDF MLD1N06CL MLD1N06CL 1n06c 1n06 fuel injector test
injector MOSFET driver

Abstract: No abstract text available
Text: avalanche mode . 4-94 Motorola TMOS Power MOSFET Transistor Device Data MLP1N06CL TYPICAL , stresses up to 2.0 kV. The gate-to-drain clamp protects the MOSFET drain from drain avalanche stresses that , -2 2 0 A B Tl UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Single Pulse D rain-to-Source Avalanche Energy (Starting T j = 25 C, Ip = 2.0 A, L = 40 mH) (Figure 6) Ea s 80 mj Preferred , Motorola TMOS Power MOSFET Transistor Device Data MLP1N06CL ELECTRICAL CHARACTERISTICS (T j = 25


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PDF MLP1N06CL MLP1N06CL injector MOSFET driver
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