The Datasheet Archive

atf25170 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
ATF-25170 ATF-25170 ECAD Model Agilent Technologies 0.5-10 GHz Low Noise Gallium Arsenide FET Original PDF
ATF25170 ATF25170 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

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1999 - Not Available

Abstract: No abstract text available
Text: 0.5 – 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features • Low , Description The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor , 2 ATF-25170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter , Size[4] Thermal Resistance: Liquid Crystal Measurement: ATF-25170 Noise Parameters: VDS = 3 V , 1.0 1.2 .89 .77 .63 .66 .62 24 50 105 147 -159 RN/50 .78 .53 .33 .06 .11 ATF-25170


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PDF ATF-25170 ATF-25170 5965-8712E 5966-4978E
Not Available

Abstract: No abstract text available
Text: ATF-25170 F eatures · L ow N o ise F igure: 0.8 dB Typical at 4 GHz · H igh A sso c ia te d , , dB at 4 GHz · H erm etic G old-C eram ic M icrostrip P ack age D escription The ATF-25170 is a , , IDS = 1 mA 50 50 -3.0 80 100 -2.0 150 -0.8 2 ATF-25170 A bsolute M aximum E!atings Sym , /W; Tc h = 150°C 1 |a,m Spot Size[4] ATF-25170 N oise Param eters: VDS = 3 V, ID S= 20 mA F req , 1.2 .89 .77 .63 .66 .62 24 50 105 147 -159 ATF-25170 Typical Perform ance, TA = 25°C G a (dB


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PDF ATF-25170 5965-8712E 59664978E
Not Available

Abstract: No abstract text available
Text: Thal HEW LETT WLKM PACKARD 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 , icrostrip Package D escription The ATF-25170 is a high perfor­ m ance gallium arsenide , 023 ■13.0 mmho 50 80 mA 50 100 150 V -3.0 -2.0 -0.8 2 ATF-25170 , ] ATF-25170 N oise Parameters: VDS = 3 V, lD = 20 mA S I~opt Freq. GHz NF0 dB Mag Ang , -159 Rn/50 .78 .53 .33 .06 .11 G W * B) ATF-25170 Typical Performance, TA = 25Â


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PDF ATF-25170 ATF-25170 44475A4 0D1770b
1998 - ATF-25170

Abstract: No abstract text available
Text: 0.5 ­ 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features · Low Noise , Package Description The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field , Current: VDS =3 V, VGS = 0 V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 2 ATF-25170 Absolute Maximum , Resistance: Liquid Crystal Measurement: jc = 300°C/W; TCH = 150°C 1 µm Spot Size[4] ATF-25170 Noise , .63 .66 .62 Ang 24 50 105 147 -159 RN/50 .78 .53 .33 .06 .11 ATF-25170 Typical Performance, TA = 25


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PDF ATF-25170 ATF-25170 5965-8712E 5966-4978E
AT8250

Abstract: AT-8250 2-18 GHz Low Noise Gallium Arsenide FET ATF-25170
Text: AVANTEK INC EOE D imiTbb GODbSbfl 1 ©AVANTEK ATF-25170 (AT-8250) 0.5-10 GHz Low Noise Gallium Arsenide FET Features • Low Noise Figure: 0.8 dB typical at 4 GHz • High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pi dB at 4 GHz • Hermetic Gold-Ceramic , Avantek's ATF-25170 is a high performance gallium arsenide Schottky-barriar-gate field effect transistor , Service CopyRight 2003 AVANTEK INC ATF-25170 , 0.5-10 GHz Low Noise Gallium Arsenide FET EOE D ■UHllhb


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PDF ATF-25170 AT-8250) ATF-25170 airbrid21 AT8250 AT-8250 2-18 GHz Low Noise Gallium Arsenide FET
1997 - 2-18 GHz Low Noise Gallium Arsenide FET

Abstract: ATF-25170
Text: 0.5 ­ 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features · Low Noise , : 21.0 dBm Typical P 1 dB at 4 GHz · Hermetic Gold-Ceramic Microstrip Package Description The ATF-25170 , 80 mA 50 100 150 V 5-57 50 -3.0 -2.0 -0.8 5965-8712E ATF-25170 , : Liquid Crystal Measurement: ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA opt Freq. GHz , 24 50 105 147 -159 RN/50 .78 .53 .33 .06 .11 ATF-25170 Typical Performance, TA = 25


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PDF ATF-25170 ATF-25170 2-18 GHz Low Noise Gallium Arsenide FET
AT82

Abstract: AT8250
Text: W hpl HEW LETT ft"KM PACKARD ATF-25170 (AT-8250) 0.5-10 GHz Low Noise Gallium Arsenide FET Features · · · · Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi d B at 4 GHz Hermetic Gold-Ceramic Microstrip Package .040 1.02 70 mil Package .020 .508 GATE / -DRAIN !" (unless otherwise specified) 1. Dimensions are , : V d s = 3 V, I d s = 1 m A 7-54 ATF-25170 , 0.5-10 GHz Low Noise Gallium Arsenide FET


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PDF ATF-25170 AT-8250) AT82 AT8250
Not Available

Abstract: No abstract text available
Text: ATF25170 Transistors N-Channel UHF/Microwave JFET V(BR)DSS (V) V(BR)GSS (V) I(D) Max. (A)150m P(D) Max. (W)450m Maximum Operating Temp (øC)175 I(DSS) Min. (A)50m I(DSS) Max. (A)150m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.50m g(fs) Max; (S) Trans. conduct;80m @V(DS) (V) (Test Condition)3 @I(D) (A) (Test Condition) V(GS)off Max. (V) @V(DS) (V) (Test Condition) Power Gain Min. (dB) @V(DD) (V) (Test Condition) @I(D) (A) (Test


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PDF ATF25170
ATF-3507

Abstract: ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-10170 ATF-13036 ATF26550 ATF-44100 ATF-21170
Text: Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-13036 ATF-13136 ATF-13336 ATF-13284 ATF-13484 ATF-13786 Gate Width (jun) 500 250 750 500 500 250 750 500 500 500 250 250 250 250 250 250 Optimum Freq. Range (GHz) 0.5-12 2-18 0.5-6 0.5-10 0.5-12 2-16 0.5-6 0.5-10 0.5-12 , -25100 ATF-26100 ATF-21170 ATF-21186 ATF-25170 ATF-25570 ATF-26150 ATF-26350 ATF-26550 ATF-25735 ATF


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PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-3507 ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-13036 ATF26550 ATF-44100
at8250

Abstract: AT82 AVANTEK transistor
Text: AVANTEK INC 20E J> ATF-25170 (AT-8250) 0.5-10 GHz Low Noise Gallium Arsenide FET O avantek 'T-'zi-zs Features · · · · Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi d B at 4 GHz Hermetic Gold-Ceramic Microstrip Package GATE Avantek 70 mil Package .040 1.02 SOURCE 020 .508 DRAIN I~ >- , lm n b b QOGbSbT 3 ATF-25170 , 0.5-10 GHz Low Noise Gallium Arsenide FET Absolute Maximum


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PDF ATF-25170 AT-8250) at8250 AT82 AVANTEK transistor
1997 - GHZ micro-X Package

Abstract: micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
Text: 5-29 ATF-25170 500 0.5 - 10 4 3.0 0.8 14.0 +21.0 70 mil stripline 5-57


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PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
1997 - GHZ micro-X Package

Abstract: ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
Text: 5-29 ATF-25170 500 0.5 - 10 4 3.0 0.8 14.0 +21.0 70 mil stripline 5-57


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PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
1999 - GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package ATF-13786 ATF-13336 at42010 AT-32032 hp_ at41411
Text: -13736 ATF-13786 ATF-26836 ATF-26884 ATF-10136 ATF-10236 ATF-10736 ATF-25170 ATF-25570 ATF-21170 ATF


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PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package ATF-13786 ATF-13336 at42010 AT-32032 hp_ at41411
1997 - IAM-81008

Abstract: 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
1997 - AT-41486

Abstract: HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
1997 - hsms-2850

Abstract: 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 hsms-2850 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
1997 - HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
HRMA-0470B

Abstract: DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
Text: -13284 ATF-13336* ATF-13484 ATF-13736* ATF-13786 ATF-21100* ATF-21170* ATF-21186 ATF-25100* ATF-25170


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PDF E-28230 S-164 CH-8902 HRMA-0470B DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
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