The Datasheet Archive

atf21170 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
ATF-21170 ATF-21170 ECAD Model Agilent Technologies 0.5-6 GHz Low Noise Gallium Arsenide FET Original PDF
ATF-21170 ATF-21170 ECAD Model Agilent Technologies 0.5-6 GHz Low Noise Gallium Arsenide FET Original PDF
ATF-21170 ATF-21170 ECAD Model Avantek 0.5-6 GHz Low Noise Gallium Arsenide FET Scan PDF
ATF21170 ATF21170 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
ATF-21170-STR ATF-21170-STR ECAD Model Hewlett-Packard 0.5-6GHz low noise gallium arsenide FET Original PDF

atf21170 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 , Typical P LdB at 4 GHz • Hermetic Gold-Ceramic M icrostrip Package Description The ATF-21170 is , dB 13.0 mmho 70 120 mA 80 120 200 V -3.0 -1.5 -0.8 2 ATF-21170 , = 250°C/W; Tc h = 150°C 1 (Am Spot Size[4] ATF-21170 Noise Parameters: Freq. Absolute Maximum1 '1 .9 0 .70 .46 .14 .09 1.0 2.0 4.0 6.0 8.0 FREQUENCY (GHz) ATF-21170


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PDF ATF-21170 ATF-21170 5965-8718E
1998 - Not Available

Abstract: No abstract text available
Text: 0.5­6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features · Low Noise Figure , rugged, reliable device. 70 mil Package Description The ATF-21170 is a high performance gallium , ATF-21170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage , . Thermal Resistance: Liquid Crystal Measurement: jc = 250°C/W; TCH = 150°C 1 µm Spot Size[4] 18 ATF-21170 , 1.5 1.0 0.5 0 1.0 NFO 12 9 6 2.0 4.0 6.0 8.0 FREQUENCY (GHz) ATF-21170 Typical


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PDF ATF-21170 ATF-21170 5965-8718E 5966-4979E
1999 - ATF-21170

Abstract: 5965-8718E
Text: 0.5­6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features · Low Noise , : 23.0 dBm Typical P1 dB at 4 GHz · Hermetic Gold-Ceramic Microstrip Package Description The ATF-21170 , 120 200 V -3.0 -1.5 -0.8 2 ATF-21170 Absolute Maximum Ratings Symbol VDS VGS , : 18 ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA NFO dB 12 Ang RN/50 2.0 Mag , Associated Gain vs. Frequency. VDS = 3 V, IDS = 20 mA, TA = 25°C. ATF-21170 Typical Performance, TA = 25


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PDF ATF-21170 ATF-21170 5965-8718E 5966-4979E 5965-8718E
Not Available

Abstract: No abstract text available
Text: Wfipl m H H M HEW LETT PACKARD 0.5-6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 , gold based D escription metallization systems and nitride The ATF-21170 is a high perfor passivation , mA 80 V -3.0 13.0 120 120 200 -1.5 -0.8 2 ATF-21170 Absolute Maximum FEatings Symbol Vds Vgs , methods. See MEASUREMENTS section for more information. t em per a tu r e c a se ATF-21170 N oise , .59 .54 r opt Ang 17 35 70 148 -177 Rn/50 .90 .70 .46 .14 .09 FREQUENCY (GHz) ATF-21170


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PDF ATF-21170 ATF-21170 5965-8718E 59664979E
1997 - ATF-21170

Abstract: No abstract text available
Text: 0.5­ 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features · Low Noise , : 23.0 dBm Typical P 1 dB at 4 GHz · Hermetic Gold-Ceramic Microstrip Package Description The ATF-21170 , mA 80 120 200 V 5-46 70 -3.0 -1.5 -0.8 ATF-21170 Absolute Maximum , Measurement: 18 ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA NFO dB 12 Ang RN/50 2.0 , Figure and Associated Gain vs. Frequency. VDS = 3V, IDS = 20 mA, TA = 25°C. ATF-21170 Typical


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PDF ATF-21170 ATF-21170
Not Available

Abstract: No abstract text available
Text: W h oI m!!EM HEW LETT PACKARD ATF-21170 (AT-8110) 0.5-6 GHz Low Noise Gallium Arsenide FET Features Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB at 4 GHz Hermetic Gold-Ceramic Microstrip Package 70 mil Package .040 1.02 SOURCE 020 .508 Description The ATF-21170 is a high performance gallium , V, V g s = 0 V Pinchoff Voltage: V d s = 3 V, Id s = 1 mA 7-43 ATF-21170 , 0.5-6 GHz Low Noise


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PDF ATF-21170 AT-8110) ATF-21170
AT-8110

Abstract: avantek Avantek amplifier 167 ATF-21170 AVANTEK transistor AVANTEK source Avantek UA-152
Text: AVANTEK INC Qavantek EOE D ■imnbb □□0bSb3 2 ATF-21170 (AT-8110) 0.5-6 GHz Low Noise ; Gallium Arsenide FET Features • Low Noise Figure: 0.9 dB typical at 4 GHz • High Associated Gain: 13.0 dB typical at 4 GHz • High Output Power: 23.0 dBm typical Pi dB at 4 GHz • Hermetic Gold-Ceramic Mlcrostrlp Package Description Avantek's ATF-21170 Is a high performance gallium arsenide , Electronic-Library Service CopyRight 2003 AVANTEK INC T-31-25 ATF-21170 , 0.5-6 GHz Low Noise Gallium Arsenide FET


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PDF ATF-21170 AT-8110) ATF-21170 peripher59 CA95054 310-371-8717cr310 AT-8110 avantek Avantek amplifier 167 AVANTEK transistor AVANTEK source Avantek UA-152
ATF-3507

Abstract: ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-10170 ATF-13036 ATF26550 ATF-44100 ATF-21170
Text: Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-13036 ATF-13136 ATF-13336 ATF-13284 ATF-13484 ATF-13786 Gate Width (jun) 500 250 750 500 500 250 750 500 500 500 250 250 250 250 250 250 Optimum Freq. Range (GHz) 0.5-12 2-18 0.5-6 0.5-10 0.5-12 2-16 0.5-6 0.5-10 0.5-12 , -25100 ATF-26100 ATF-21170 ATF-21186 ATF-25170 ATF-25570 ATF-26150 ATF-26350 ATF-26550 ATF-25735 ATF


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PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-3507 ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-13036 ATF26550 ATF-44100
Not Available

Abstract: No abstract text available
Text: AVANTEK INC EOE D 1141 = 1bb OQabSt.3 2 " ; ATF-21170 (AT-8110) 0.5-6 GHz Low Noise Gallium Arsenide FET 'T -3 > \ - x ë Features · · · · Low N oise Figure: 0.9 dB typical at 4 GHz High A ssociated Gain: 13.0 d B typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB at 4 GH z Hermetic Gold-Ceram ic Microstrip Package .020 .508 .040 . 1.02 SO U R C E Avantek 70 mil , DGGLi5b4 4 ATF-21170 , 0.5-6 GHz Low Noise Gallium Arsenide FET Typical Performance, T a = 25


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PDF ATF-21170 AT-8110)
1997 - GHZ micro-X Package

Abstract: micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
Text: -25735 500 0.5 - 10 4 3.0 1.2 13.0 +19.0 5-63 ATF-21170 750 0.5 - 6 4 3.0


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PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
1999 - ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Text: -10236 ATF-10736 ATF-21170 ATF-21186 Notes: 1. P1 dB @ power bias 2. G1 dB 3. Tuned small signal gain


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PDF OT-363 SC-70) OT-343 ATF-36077 ATF-36163 ATF-34143 ATF-13336 ATF-13736 ATF-13786 ATF SOT ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
1997 - GHZ micro-X Package

Abstract: ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
Text: -25735 500 0.5 - 10 4 3.0 1.2 13.0 +19.0 micro-X SM 5-63 ATF-21170 750 0.5 -


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PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
1999 - GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package ATF-13786 ATF-13336 at42010 AT-32032 hp_ at41411
Text: -13736 ATF-13786 ATF-26836 ATF-26884 ATF-10136 ATF-10236 ATF-10736 ATF-25170 ATF-25570 ATF-21170 ATF


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PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package ATF-13786 ATF-13336 at42010 AT-32032 hp_ at41411
1997 - IAM-81008

Abstract: 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
1997 - AT-41486

Abstract: HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
1997 - hsms-2850

Abstract: 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 hsms-2850 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
1997 - HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: -3003 . 7-82 ATF-13786 ATF-21170 ATF-21186 ATF-25170 ATF


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
1998 - 2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: No file text available


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PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
HRMA-0470B

Abstract: DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
Text: -13284 ATF-13336* ATF-13484 ATF-13736* ATF-13786 ATF-21100* ATF-21170 * ATF-21186 ATF-25100* ATF


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PDF E-28230 S-164 CH-8902 HRMA-0470B DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
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