The Datasheet Archive

atf13100 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
ATF-13100 ATF-13100 ECAD Model Agilent Technologies 2-18 GHz Low Noise Gallium Arsenide FET Original PDF
ATF-13100 ATF-13100 ECAD Model Avantek 2-18 GHz Low Noise Gallium Arsenide FET Scan PDF
ATF-13100-GP3 ATF-13100-GP3 ECAD Model Agilent Technologies 2-18 GHz Low Noise Gallium Arsenide FET Original PDF
ATF13100-GP3 ATF13100-GP3 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

atf13100 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor atf

Abstract: No abstract text available
Text: Number ATF-13100-GP3 D evices Per Tray 50 ATF-13100 N oise Parameters: VDS = 2.5 V, IDS = 20 mA Freq , ATF-13100 Features · Low N oise Figure: 1.1 dB Typical at 12 GHz · High A ssociated Gain: 9.5 dB , APPLICATIONS section. Chip Outline Description The ATF-13100 is a high perfor mance gallium arsenide , assembling and testing 10 samples per wafer. 5-33 5965-8694E ATF-13100 A bsolute Maximum Itatings Symbol , -165 -112 Rn/50 0.32 0.21 0.15 0.09 0.21 ATF-13100 Typical Performance, TA = 25°C C 5 < )S


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PDF ATF-13100 Outli13 ATF-13100 transistor atf
1997 - ATF-13100

Abstract: ATF-13100-GP3 atf13100 2-18 GHz Low Noise Gallium Arsenide FET
Text: Ordering Information Part Number Devices Per Tray ATF-13100-GP3 50 ATF-13100 Noise Parameters , 2­18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features · Low Noise Figure , : 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide , wafer. 5-33 5965-8694E ATF-13100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH , 0.21 0.15 0.09 0.21 ATF-13100 Typical Performance, TA = 25°C 12 20 10 GA 1.5 15


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PDF ATF-13100 ATF-13100 proc56 ATF-13100-GP3 atf13100 2-18 GHz Low Noise Gallium Arsenide FET
1997 - Not Available

Abstract: No abstract text available
Text: : Part Number Ordering Information Part Number Devices Per Tray ATF-13100-GP3 50 ATF-13100 , 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise , Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium , V -3.0 -1.5 -0.8 2 ATF-13100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT , -112 0.32 0.21 0.15 0.09 0.21 ATF-13100 Typical Performance, TA = 25°C 12 20 10 GA


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PDF ATF-13100 ATF-13100 5965-8694E
transistor atf

Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
Text: IDSS 225 mW 175°C -6 5°C to +175°C Part Number Ordering Information Part Number ATF-13100-GP1 ATF-13100-GP3 ATF-13100-GP6 Devices Per Tray 5 50 up to 300 Pt T ch tstg Thermal Resistance: 0jc = 250°C/W; T , WiaË H EW LET T mLOÆ PA C K A R D ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET Features , Output Power: 17.5 dBm typical Pi dB at 12 GHz Chip Outline Description The ATF-13100 is a high , assembling and testing 10 samples per wafer. 7-20 ATF-13100 ,2-18 GHz Low Noise Gallium Arsenide FET


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PDF ATF-13100 transistor atf 2-18 GHz Low Noise Gallium Arsenide FET
AVANTEK oscillator

Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
Text: AVANTEK INC 2GE D llMlìbb 0GGb544 T © AVANTEK ATF-13100 2-18 GHz Low , B at 12 GHz Description Avantek's ATF-13100 is a high performance gallium arsenide , limTbb 0QGb545 ATF-13100 , 2-18 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings P , 225 mW 175°C -65°C to +175°C f-31-25 Part Number Ordering Information Part Number ATF-13100-GP1 ATF-f3100-GP3 ATF-13100-GP6 Devices Per Tray Sr 50 up to 300 Thermal Resistance: 0jc = 250°C/W; TcH = 150


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PDF 0GGb544 ATF-13100 rel-48 AVANTEK oscillator Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
avantek

Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF 351 ATF-13100-GP3 ATF-13100 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
Text: Information Part Number Devices Per Tray ATF-1310&GP1 ATF-13100-GP3 ATF-13100-GP6 Sr SO up to 300 Typical , AVANTEK INC 2GE D ■llMlIhb 0GGb544 1 ©AVANTEK ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET ~ 3.J-ZS Features • Low Noise Figure: 1.1 dB typical at 12 GHz • High Associated Gain , Avantek's ATF-13100 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor , Powered by ICminer.com Electronic-Library Service CopyRight 2003 AVANTEK INC ATF-13100 , 2-18 GHz Low


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PDF 0GGb544 ATF-13100 ATF-13100 recommende63 avantek Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF 351 ATF-13100-GP3 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
Not Available

Abstract: No abstract text available
Text: Ordering Information Part Number ATF-13100-GP1 ATF-13100-GP3 ATF-13100-GP6 Devices Per Tray 5 50 up to 300 , typical Pi at 12 GHz hb Chip Outline Description The ATF-13100 is a high performance gallium , SÔ 4 O D O T ß T B Ibb H P A blE D ATF-13100 , 2-18 GHz Low Noise Gallium Arsenide FET H E W L E


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PDF ATF-13100 passivati68
1997 - GHZ micro-X Package

Abstract: micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
Text: Low Noise MESFETs (Typical Specifications @ 25°C Case Temperature) Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250 2 - 16 12 2.5 1.8 - 7.5 [2] +16.5 85 mil plastic SM 5-43 Part Number ATF-13786 250 1 - 12 10 3.0 Package Page No. +17.5 chip


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PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 ATF-25735 ATF-10236 atf 26836 ATF-26884 ATF-25570 ATF-13736 ATF-13100
1997 - GHZ micro-X Package

Abstract: ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
Text: ] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 +17.5


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PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 ATF-26884 Field Effect Transistors ATF-26836 ATF-13786 ATF-13736 ATF-13336 ATF-13100 ATF-10100
ATF-3507

Abstract: ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-10170 ATF-13036 ATF26550 ATF-44100 ATF-21170
Text: Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-13036 ATF-13136 ATF-13336 ATF-13284 ATF-13484 ATF-13786 Gate Width (jun) 500 250 750 500 500 250 750 500 500 500 250 250 250 250 250 250 Optimum Freq. Range (GHz) 0.5-12 2-18 0.5-6 0.5-10 0.5-12 2-16 0.5-6 0.5-10 0.5-12 0.5-12 2-16 2-16 2-16 1-16 1-16 1-12 Test Freq. (GHz) 4 12 4 4 4 12 4 4 4 4 12 12 12 4 4 10 NF. (dB) 0.5


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PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-3507 ATF-35176 ATF-35076 ATF-35376 ATF-35576 ATF-13036 ATF26550 ATF-44100
1997 - IAM-81008

Abstract: 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
Text: -10736 ATF-13100 ATF-13336 ATF-13736 . 5-26


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 ina-02170 5082-3043 INA-01170 MSA0270 8205 datasheet 5082-2805 HSMP-3804
1997 - AT-41486

Abstract: HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
Text: -10736 ATF-13100 ATF-13336 ATF-13736 . 5-26


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PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 HSCH-5313 8060 IAM MSA-1105 HSCH-5337 ATF-46171 VTO-8000 HSMP-3895 HSMS-2804 1N5719
1997 - hsms-2850

Abstract: 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
Text: -10736 ATF-13100 ATF-13336 ATF-13736 . 5-26


Original
PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 hsms-2850 5082-2830 HSMP-3895 IAM-81008 VTO-8240 VTO-8000 HSMS-2862 HSMS-2864 HSMS-285C 8205 datasheet
1997 - HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Text: -10736 ATF-13100 ATF-13336 ATF-13736 . 5-26


Original
PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 5082-2970 ifd 0512 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
1993 - ATF-35176

Abstract: ina10386 INA-10386 lnb downconverter schematic diagram ATF35176 ATF-35576 micro-X ceramic Package lna fet LNB down converter for Ku band AN-A008 ATF-3507
Text: dB GA (all stages, military or high-rel LNAs) ATF-13100 : 250 µm MESFET unpackaged chip with 1.1 dB NF


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PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 INA-10386 lnb downconverter schematic diagram ATF35176 ATF-35576 micro-X ceramic Package lna fet LNB down converter for Ku band AN-A008 ATF-3507
HRMA-0470B

Abstract: DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
Text: -10100 ATF-10136* ATF-10170* ATF-10236* ATF-10736* ATF-13036 ATF-13100 * ATF-13136* ATF-13170 ATF


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PDF E-28230 S-164 CH-8902 HRMA-0470B DIODE GOC 61 HPMA-0370 HPMA-0485 HPMA-0470TXV HRMA-0670B SJ 2036 AVANTEK ATF26884 HP 33002A HPMA-2085
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