The Datasheet Archive

apt5015blc datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
APT5015BLC APT5015BLC ECAD Model Advanced Power Technology POWER MOS VI 500V 32A 0.150 Ohm Original PDF

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Catalog Datasheet MFG & Type PDF Document Tags
1999 - APT5015BLC

Abstract: No abstract text available
Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS , °C unless otherwise specified. APT5015BLC UNIT 500 Parameter Volts AL IC HN EC ON T I , Conditions 050-5918 Rev - Symbol DYNAMIC CHARACTERISTICS Symbol APT5015BLC Characteristic


Original
PDF APT5015BLC O-247 O-247 APT5015BLC
1999 - APT6015LVR

Abstract: 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
Text: 1300 1300 1300 1300 1300 APT1001RBLC APT10086BLC APT5020BLC APT5017BLC APT5015BLC


Original
PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
2000 - 5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
Text: APT5017BLC APT5015BLC NOW NOW NOW NOW NOW TO-247 1210 1300 1300 1300 APT1001RSLC


Original
PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
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