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Microchip Technology Inc
APT30M19JVFR Trans MOSFET N-CH 300V 130A 4-Pin SOT-227 - Rail/Tube (Alt: APT30M19JVFR)
APT30M19JVFR ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas APT30M19JVFR Tube 0 40 Weeks 10 $79.72 $79.72 $72.478 $67.301 $67.301 More Info
Newark APT30M19JVFR Bulk 0 5 $76.81 $76.81 $76.81 $76.81 $76.81 More Info
Microchip Technology Inc APT30M19JVFR Tube 0 1 $79.72 $79.72 $68.84 $63.15 $61.08 More Info
Onlinecomponents.com APT30M19JVFR 0 - $66.59 $66.59 $66.59 $66.59 More Info
TME Electronic Components APT30M19JVFR 1 3 $83.2 $73.52 $73.52 $73.52 $73.52 More Info
More Distributors
NAC APT30M19JVFR Tube 0 5 Weeks, 5 Days 10 $96.6267 $96.6267 $83.44 $83.44 $83.44 More Info
Avnet Europe APT30M19JVFR 0 40 Weeks, 3 Days 10 - - - - - More Info
Master Electronics APT30M19JVFR 0 - $66.59 $66.59 $66.59 $66.59 More Info

apt30m19jvfr datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
APT30M19JVFR APT30M19JVFR ECAD Model Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 130A SOT-227 Original PDF
APT30M19JVFR APT30M19JVFR ECAD Model Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
APT30M19JVFR APT30M19JVFR ECAD Model Cypress Semiconductor 64K x 24 Static RAM Module Original PDF
APT30M19JVFR APT30M19JVFR ECAD Model Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 130A SOT-227 Original PDF

apt30m19jvfr Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Not Available

Abstract: No abstract text available
Text: APT30M19JVFR 130A 0.019 300V POWER MOS V ® S S FREDFET Power MOS V® is a new , otherwise specified. APT30M19JVFR UNIT 300 Parameter Volts Drain-Source Voltage 130 , Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5604 Rev B Symbol APT30M19JVFR DYNAMIC , DURATION APT30M19JVFR 360 VGS=8V, 9V, 10V & 15V 300 7V 240 6.5V 180 6V 120 , CURRENT (AMPERES) 360 APT30M19JVFR 50,000 10µS OPERATION HERE LIMITED BY RDS (ON) Ciss


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PDF APT30M19JVFR OT-227 E145592
APT30M19JVFR

Abstract: fast diode SOT-227
Text: APT30M19JVFR 130A 0.019 300V POWER MOS V ® S S FREDFET Power MOS V® is a new , otherwise specified. APT30M19JVFR UNIT 300 Parameter Volts Drain-Source Voltage 130 , 050-5604 Rev B Symbol APT30M19JVFR DYNAMIC CHARACTERISTICS Characteristic Symbol Test , UNIT APT30M19JVFR 360 VGS=8V, 9V, 10V & 15V 300 7V 240 6.5V 180 6V 120 , VOLTAGE vs TEMPERATURE 050-5604 Rev B ID, DRAIN CURRENT (AMPERES) 360 APT30M19JVFR 50,000


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PDF APT30M19JVFR OT-227 E145592 APT30M19JVFR fast diode SOT-227
APT30M19JVFR

Abstract: No abstract text available
Text: ADVANCED POW ER Te c h n o l o g y ® APT30M19JVFR 300V FREDFET 130A 0.0190 POWER MOSV , . APT30M19JVFR 300 130 Amps Parameter Drain-Source Voltage Continuous Drain Current @ T c = 25°C Pulsed , DYNAMIC CHARACTERISTICS Symbol C jSS C 0ss C rss Qg Q gs Q gd APT30M19JVFR Test Conditions > > 0 h , TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT30M19JVFR 360 - V G S := 8V , 9 V , VOLTAGE vs TEMPERATURE 050-5604 Rev B APT30M19JVFR FIGURE 10, MAXIMUM SAFE OPERATING AREA V


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PDF APT30M19JVFR OT-227 APT30M19JVFR E145592
Not Available

Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y ' APT30M19JVFR 300V FREDFET 130A 0.019Q POWER MOS V , Tested Popular SOT-227 Package All Ratings: Tc = 25°C unless otherwise specified. APT30M19JVFR 300 , MIN TYP 180 0 0 3250 980 650 115 290 22 33 70 10 APT30M19JVFR MAX 21600 4550 1470 975 175 435 44 , TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT30M19JVFR 360 CO II _ > - V , , ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT30M19JVFR V DS, D R A IN


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PDF APT30M19JVFR OT-227 APT30M19JVFR E145592
Not Available

Abstract: No abstract text available
Text: APT30M19JVFR A dvanced P o w er Te c h n o l o g y ® 300V POWER MOSV 130A 0.019CÌ (iFREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs , Characteristic APT30M19JVFR Test Conditions Q ss Input Capacitance Coss Output Capacitance TYP , IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT30M19JVFR 360 É 2 er 300 ^ - V GS= =8V , vs CASE TEMPERATURE APT30M19JVFR 1,000 C O LU er o z < er er o < < o


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PDF APT30M19JVFR OT-227 E145592
Not Available

Abstract: No abstract text available
Text: : T c = 2 5 °C u n le s s o th e rw is e sp e cifie d . APT30M19JVFR 3 00 130 Amps 52 0 ±30 Volts ±40 , C 0ss C rss APT30M19JVFR Test Conditions VGS = o v V DS = 25V f = 1 MHz Characteristic Input


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PDF OT-227 APT30M19JVFR MIL-STD-750 00A/jas,
nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT50M50JVR APT20M45B APT8030JVR apt40m70jvr APT5020BVFR APT20MUJVFR 130-131
Text: APT50M50JVFR APT30M40 J VFR APT30M19JVFR APT20M22JVFR APT20MUJVFR 1000 800 500 300 200 100 An) ot the


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PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT50M50JVR APT20M45B APT8030JVR apt40m70jvr APT5020BVFR APT20MUJVFR 130-131
1998 - APT10026JN

Abstract: apt1004rbn APT4020BN APT5014LVR APT5010LVFR FREDFETs APT10050JN APT8030jn APT5010JVR APT50M50JVFR
Text: 2500 3600 240 300 APT30M40JVFR APT30M19JVFR 0.022 0.011 97 175 450 700 8500


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PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT4020BN APT5014LVR APT5010LVFR FREDFETs APT10050JN APT8030jn APT5010JVR APT50M50JVFR
APT100GF60LR

Abstract: 1200 volt mosfet FREDFETs APT609RK3VFR APT75GP120JDF3 sot-227 footprint APT5010jvr APT8075BVR APT1001RBVR APT50M85JVR
Text: APT30M19JVFR 200 0.022 0.019 0.011 97 112 175 APT20M22JVR APT20M19JVR APT20M11JVR


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1999 - APT6015LVR

Abstract: 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
Text: 18000 2500 3600 240 300 APT30M40JVFR APT30M19JVFR 0.022 0.011 97 175 450 700


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PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
2000 - 5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
Text: 3600 240 300 APT30M40JVFR APT30M19JVFR 0.022 0.011 97 175 450 700 8500 18000


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PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
2001 - mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs APT1208 APT100S20B APT60M75JVR transistors mj 1504 APT60GF120JRD APT4014BVR APT1201R2BLL
Text: APT5010JVFR 7 22 APT50M85JVFR D G TSO APT50M50JVFR APT30M40JVFR APT30M19JVFR ISOTOP®[J


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sot-227 footprint

Abstract: VRF2933 APT35GP120JDQ2 DRF1200 SP6-P ARF1511 ARF521 smps welder inverter APTGT25DA120D1G TO-247
Text: APT30M40JVR APT30M19JVR APT30M40JVFR APT30M19JVFR 200 0.022 0.019 0.011 97 112 175


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SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
Text: No file text available


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PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA SMBx6.0A 1.5ke series PFC 1.5kw
smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
Text: 130 APT30M19JVFR ISOTOP® 0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO-247 or D3


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PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 DRF1300 1000w inverter MOSFET smps 500w half bridge 1000W solar power inverter 3000w inverter mosfet circuit APT30GT60BRG
catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APT40M35JVFR APTLM50H10FRT APT5SC120K 24 volt output smps design APT50M50JVR induction furnace using igbt
Text: APT40M35JVFR 300 0.040 0.019 70 130 APT30M40JVR APT30M19JVR APT30M40JVFR APT30M19JVFR 200


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2011 - N-channel MOSFET 800v 50a to-247

Abstract: SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
Text: APT30M40JVFRG APT30M19JVFR APT20M45BVFRG APT20M38BVFRG APT20M22B2VFRG APT20M11JVFR TO-247 or D3 TO-247 or D3


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PDF 10F-A, N-channel MOSFET 800v 50a to-247 SP6-P DRF1400 SMPS 1000w IGBT REFERENCE DESIGN APT35DL120HJ IGBT triple modules 100A APTES80DA120C3G 45A, 1200v n-channel npt series igbt semiconductors cross reference 2000W mosfet power inverter
2014 - VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: APT30M19JVR 130 APT30M19JVFR ISOTOP® 0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO


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PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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