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apt10050jlc datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
APT10050JLC APT10050JLC ECAD Model Advanced Power Technology POWER MOS VI 1000V 19A 0.500 Ohm Original PDF

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2002 - APT10050JLC

Abstract: APT10050JL
Text: APT10050JLC 1000V 19A POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS , MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT10050JLC , CHARACTERISTICS Symbol APT10050JLC Characteristic Test Conditions MIN TYP Ciss Input


Original
PDF APT10050JLC OT-227 MIL-STD-750 APT10050JLC APT10050JL
APT10050JLC

Abstract: No abstract text available
Text: APT10050JLC 1000V POWER MOS VITM S S Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS , . APT10050JLC UNIT 1000 Parameter Volts AL IC HN EC ON T I ED AT NC RM VA FO AD IN , CHARACTERISTICS Symbol APT10050JLC Characteristic Test Conditions MIN TYP Ciss Input


Original
PDF APT10050JLC OT-227 Volt87) MIL-STD-750 APT10050JLC
1999 - APT6015LVR

Abstract: 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
Text: 440 170 380 150 180 330 2500 3600 2500 3000 3600 APT10050JLC APT10025JLC APT5010JLC


Original
PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn arf450 APT6011LVFR FREDFETs apt8015jvr 5017bvr APT2*61D120J APT100GF60LR APT5014LVR
2000 - 5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
Text: 3600 2500 3000 3600 APT10050JLC APT10025JLC APT5010JLC APT50M80JLC APT50M50JLC NOW NOW


Original
PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC APT5020BLC apt2x101D60 APT30M85BVR apt10050
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