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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

all type transistor equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Text: with JEDEC registration RDF-3/JS-9 RDF-7. data format JS-6 RCA type 2N59953 is an epitaxial silicon n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic , type is designed for stripline as well as lumped-constant circuits. This transistor is completely tested for load-mismatch capability at 175 MHz with an infinity-to-one VSWR through all phases under , Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â


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PDF 2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: signal design techniques are: 1. the use of two port parameters, and 2. the use of some type of equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , example of this type of presentation. The data may also be presented in series equivalent form. It makes , transistor type is based on estimates of input and output impedance. Since the input and output impedances , state power amplifier design through the use of large signal transistor input and output impedances


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
Text: small signal design techniques are: 1. the use of two port parameters, and 2. the use of some type of equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , test amplifier for a new transistor type is based on estimates of input and output impedance. Since , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: transistor impedance BLF6G38-25_BLF6G38S-25 All information provided in this document is subject to , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , ; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4. Limiting values In


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Text: JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring , Collector WARNING: RCA Type 2N5996 should be handled with care. The ceramic portion of this transistor , -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , individual ballast resistance in each of the emitter sites for stabilization. The transistor is completely tested for load mismatch capability at 175 MHz with an infinity-to-one VSWR through all phases under


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PDF 2N5996 175-MHz 15-watt COLLECTOR50 V61R3 2N5996 56-590-65/4A ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 i7356 RCA Power Transistor 4 225 VK20009-3B
1997 - 7447 BCD to Seven Segment display

Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
Text: . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector


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PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , earless flanged package; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4 , Conditions Tcase = 80 °C; PL = 25 W Type BLF6G38-25 BLF6G38S-25 Typ 1.8 1.8 Max Unit K/W K/W BLF6G38


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: -25_BLF6G38S-25_2 Product data sheet ATC 100B or equivalent © NXP B.V. 2008. All rights reserved. Rev. 02 - 23 , transistor impedance BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
Text: N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , circuits. •Formerly RCA Dev. No.TA7941. RCA HF-31 Package ("Studless TO-216 AA") Type 40934 is , . COLLECTOR CURRENT: Continuous . TRANSISTOR DISSIPATION: At case temperatures up , €”Large-signal parallel equivalent input resistance vs. frequency. COLLECTOR SUPPLY VOLTAGE (Vcc)s'2 5 V CASE TEMPERATURE


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PDF RCA-40934* d 331 TRANSISTOR equivalent RCA-40934 rca transistor RCA 40934 transistor rca 40934 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B TO216
mp4001

Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
Text: wire © Transistor chip (D Mold plastic Figure 1 Internal construction of a full molded type 98 , a 4 in 1 type is used independently is approx imated by the simple radiation equivalent circuit , ( case to ambient Figure 3 Simple radiation equivalent circuit using a single 4 in 1 type Thus, the , Transistor junction temperature and DC thermal resistance using a single 4 in 1 type . T ran sisto r Tn , molded type SIP 10-pin package MP4001. (a)First, Figure 3 shows the DC thermal resist ance equivalent


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PDF 700cm1 300cmJ mp4001 MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Text: Rg = 150 ohms ±1% (IRC Type MDB Resistor, or equivalent ). R4 = 3000 ohms 1/2 W carbon resistor. R5 = 1000 ohms. Rg = 275 ohms ±1% (IRC Type MDB Resistor, or equivalent ). R7, Rg = 50 ohms ±1% (IRC Type MDB Resistor, or equivalent ). Rg = 2000 ohms ±1% (IRC Type MDB Resistor, or equivalent ). RlO = 150 ohms ±1% (IRC Type MDB Resistor, or equivalent ). Si = Thompson Con 3AA Coax Switch, or equivalent ). _ , gain, Pg). FIGURE 3. Power-gain test circuit for transistor type 2N1224. i .rnun •r T. i nn


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PDF MIL-S-19500/189B 2N1224 2N1225 MDB Resistor 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
all type transistor equivalent

Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter phototransistor HV IR block photodiode Infrared Phototransistor photodiode chip silicon pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
Text: structure of the molded type , the type currently manufactured by Rohm, and the photodiode equivalent circuit , photodiode has a sensitivity for all electromagnetic radiation with a wavelength less than 1100 nm. I Introduction As shown in Figure 9, the structure of the photodiode can be classified as a PN type or a PIN type , (N-) N+ Anode -E T 3 P-type layer I (high resistance) N-type layer Cathode PN type Cathode PIN type Photodiode envelope structure The photodiodes are available in three types of


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2004 - 2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 2SC2879 CB LINEAR CIRCUIT 3SK121 fet replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Text: Bipolar transistor MINI 2SC2669 2SC2670 S-MINI MIX Package Part Number Type S-MINI , SSM MIX USQ 2SC4915 Bipolar transistor Application Type Package Part Number , Package Type SMQ RF Amp Bipolar transistor Application Part Number 2SC5087 MT4S03A , Type S-MINI 1'st OSC JDP4P02AT Bipolar transistor USM Application Type Single 1 , Type *: New products 21 Type Bipolar transistor Package Type Part Number USM


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PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 2SC2879 CB LINEAR CIRCUIT 3SK121 fet replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
1997 - 13b1 zener

Abstract: LCD22 LCD-2-22 1997 twisted nematic VGA color color sensitive PHOTO TRANSISTOR photo resistive cell Liquid Crystal shutter Driver zener blue stripe schematic TFT lcd tv 1191-02
Text: the first matrix type displays. The MIM is electrically equivalent to the bi-directional zener diode , easy to understand. Most rely on a TN or twisted nematic type structure. A side view of this , . Putting it all together, when no field is applied light passing from the back of the display is twisted , Common electrode Alignment layers Liquid crystal layer Pixel electrode TFT thin film transistor Source line LCD22-1 Figure 1. Side View of Active Matrix TFT LCD Cell Structure (Direct View Type


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PDF SMT97012 13b1 zener LCD22 LCD-2-22 1997 twisted nematic VGA color color sensitive PHOTO TRANSISTOR photo resistive cell Liquid Crystal shutter Driver zener blue stripe schematic TFT lcd tv 1191-02
RCA-40673

Abstract: 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 40673 200 pF air variable capacitor RCA40673 mosfet 40673
Text: -40673 is an n-channel silicon, depletion type , dual insulated-gate field-effect transistor . Special , . Johnson Type 160-104, or equivalent . C2: 1.5-5 pF variable air capacitor: E.F. Johnson Type 160-102, or equivalent C3: 1- 10 pF piston-type variable air capacitor: JFO Type VAM-010; Johanson Type 4335, or equivalent . C4: 0.8- 4.5 pF piston type variable air capacitor:Erie 560-013 or equivalent . Lj: 4 turns , MOS FIELD-EFFECT DEVICES 40673 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR It-Channel


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PDF RCA-40673 VAM-010; 02-in. 085-in. 095-in. 5/16-in. 200-MHz 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 40673 200 pF air variable capacitor RCA40673 mosfet 40673
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type , thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 135 W (CW) Type BLF6G27


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
2000 - RS7447

Abstract: 7 segment with 7447 7448 7447 7447 to 7 segment display alphanumeric segment decoder decoder 7448 7 SEGMENT DISPLAY basic CIRCUIT common cathode 7447 Transistor Equivalent list 7447 display
Text: TTL or transistor and darlington transistor Background LED displays come in various sizes (0.1 , Latch Main Data or System Memory Decoder Driver V CE Display Darlington Transistor TTL or Transistor It can be seen that Vce (saturation voltage) for the driver is going to be a , transistor will have different current limiting resistor values to maintain a constant current through the , driver Figure 8. Open collector type driver with common anode display Data Input V cc V CC


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PDF 1-888-Infineon RS7447 7 segment with 7447 7448 7447 7447 to 7 segment display alphanumeric segment decoder decoder 7448 7 SEGMENT DISPLAY basic CIRCUIT common cathode 7447 Transistor Equivalent list 7447 display
1993 - vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC LZN2-UA-DC12 NF2-12 mrf245
Text: point is around 100 MHz. This is determined by the transistor die size, geometry and package type , and , INPUT 37 nH RS = 420 pF Thus, for the required 880 pF, a capacitor of this type with equivalent , , non-internally matched transistor , the MRF240, which has good linear characteristics for SSB operation. A , , round-wire inductors were used. Input and output impedance matching in transistor amplifiers is required to , power transistor are both usually inductive in reactance (designated as + JX in data sheets), becoming


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PDF AN791/D AN791 vhf linear amplifier mrf245 amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC LZN2-UA-DC12 NF2-12 mrf245
1999 - transistor x1

Abstract: SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
Text: this, the instantaneous power dissipation in the transistor (Id x Uds) is determined at all times and a , completes determination of all the elements of the external thermal equivalent circuit diagram. The example , equivalent circuit diagrams is a description of the implementation of a dynamic temperature-dependent model , A maximum junction temperature is specified for all semiconductor components which, when exceeded , . Ignoring this effect can lead to an undesired ­ even catastrophic ­ turn-on of the transistor when it


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PDF com/products/36/36 115ff. BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch Siemens 3TH 80 Siemens 3TH 20-22 siemens profet datenbuch
sot36

Abstract: rohm surface mounted transistor series free all transistor equivalent book
Text: Introduction Introduction This data book provides data sheets for all surface mount transistors that are manufactured by ROHM Corporation. All transistors are manufactured with ROHM's unique , , sizes, and characteristics to satisfy our most demanding customers. All series of the ROHM transistors , Package type New name Old name Industry standard Features Ultra-compact 1.6 x 0.8 mm, the world's smallest transistor . Mounting area approximately 30% of SMT3, 60% of UMT3; ideal for ultrahigh density


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1998 - Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
Text: TYPE NUMBER microwave transistor TR DIMENSIONS 1/4 MC3403 or equivalent note 1 2N2219 , trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking codes may be used for identification (see Table , 1998 Jul 31 Table 9 Marking codes for microwave transistors TYPE NUMBER MARKING CODE , chapters " Type Designation Code For Microwave Transistors"and "Pro Electron Type Numbering System". ·


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PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
MG400H1FL1

Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Text: density around the emitter. Electrodes Collector Figure 4 Planar type transistor f Curve after ^ , type of transistor . With ring shaped emitters, this occurs at one point in the center. With comb shaped , ) Two power source type direct drive circuit (2) When the transistor Q3 ON signal is applied, transistor , ent which can flow in a transistor , the voltage which can be impressed, power dissipation, etc., are determined as maximum rating values. The understanding and recognition of maxi mum ratings during transistor


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2005 - Not Available

Abstract: No abstract text available
Text: : Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need , frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model , SIEGET 25 NPN Silicon RF Transistor Preliminary data For high gain low noise amplifiers , ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP420F Maximum , ma = |S21 / S12 | (k-(k2-1)1/2 ) 2IP3 value depends on termination of all intermodulation frequency


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PDF BFP420F
sine wave generator using LM358

Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
Text: answer or do all of the following. 1. Design the amplifier to meet the specifications shown above. In your report, please include all of your design calculations. Your gain does not need to be exactly 20 , Amplitude: 100mV Frequency: 100Hz Type : Sine Wave Offset: 0V Sketch the input and output voltage. 3 , result imply about the op-amp? What type of filter do we have (i.e. low pass, high pass, etc)? Now, let , all of the following: 8. At high frequencies, does the capacitors act like a short-circuit or an


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PDF LM741 sine wave generator using LM358 LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Type for 12.5-Volt Applications in VHF Communications Equipment , ?SS-jV63RJ WARNING: RCA Type 2N5993 should be handled with care. The ceramic portion of this transistor contains , €¢ COLLECTOR CURRENT: Continuous.Ic 5.0 A * TRANSISTOR DISSIPATION: PT At case temperatures up , .230 °C *ln accordance with JEDEC registration data format JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59933 is an epitaxial silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device


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PDF 2N5993 88-MHz SS-jV63RJ 2N5993 TA7921 150 watt hf transistor 12 volt rca 632 rca transistor RCA rf power transistor 452 transistor 225/TA7921
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