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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC4416IMS#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC2990IMS#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC6104HMS8#TR Linear Technology IC 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, PLASTIC, MSOP-8, Power Management Circuit
LTC2913HMS-1 Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC4416IMS Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC2913HMS-1#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit

acrian rf power Datasheets Context Search

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acrian motorola

Abstract: ACRIAN MPA201 RF01 acrian inc
Text: 1 Ennna 0182998 ACRIAN INC BBBBB _ T? DE |01fl5™ DD01D43 □ T T-33-11 GENERAL , POWER 1dB Compression Power 800 mW minimum 800 mW typical 400 mW minimum 315 mW minimum Maximum , L1 RF Output L2 Ground L3 RF Input 490 Race Street, San Jose, CA 95126 Ewenny Rd., Bridgend, Mid , Power Output 500 mW Pin Power Input +13 dBm VSWR Input VSWR f-1-500 MHz 1.5:1 2.0:1 Ga Small Signal Gain Vdc= 12.5 V 12 13 dB AGa Gain Flatness ±0.6 ±1.0 dB P1dB Power Out @ 1dB Gain


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PDF 01fl5â DD01D43 T-33-11 MPA-201 40dBm 1MV309 acrian motorola ACRIAN MPA201 RF01 acrian inc
acrian RF POWER TRANSISTOR

Abstract: BAL0204-125 225-400MHz Q12-200 0105-50 acrian TG T-33-15 acrian inc
Text: ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C Case Temperature , -65 to +150"C +200 C POWER OUTPUT VS POWER INPUT (TYPICAL) CO t < 5 H 150 Q. H O100 EC Iii g 50 Q. Vcc-Î f-400 >8V MHz >- 7.5 15 22.5 30 POWER INPUT (WATTS , CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout1 Power Output f-400MHz Class C 125 Watts Pin1 Power Input At Rated Power Out, Vcc- 28 25 Watts Pg1 Power Gain 7 dB BVebo1 Voltage - Emitter to Base


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PDF T-33-15 225-400MHz BAL0204-125. acrian RF POWER TRANSISTOR BAL0204-125 Q12-200 0105-50 acrian TG T-33-15 acrian inc
2N6198

Abstract: Acrian B12-28 ic 832 8 pin acrian inc B1228
Text:  ACRIAN INC DE ioifla^Tñ 00012S3 O isaiaiaBüiBiiaiiPssaR! GENERAL DESCRIPTION The B12-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operation in Class A, AB, or C amplifiers and provides the maximum power output/ power gain combination. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature , to+150 °C +200 °C POWER OUTPUT VS POWER INPUT (TYPICAL) CO H £ «S Q. H 3 O CE tu o o. 1


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PDF 00012S3 B12-28 2N6198 Acrian ic 832 8 pin acrian inc B1228
indiana general

Abstract: BYISTOR ACR1ANS175-50 F625-9 indiana general F624-19 Acrian S175-50-3 s 175-50 "class AB Linear" hf S175-50
Text: MAXIMUM RATINGS Total Power Dissipation @ 25 C Case Temperature (Note t) Maximum Voltage and Current , E (2 pis) POWER OUTPUT VS POWER INPUT 250 L1 : B L2 : E L3 : C ~ 200 co t < £ =3 a 5 o oc , 28.90 .25 1.140 .010 0 12 3 4 POWER INPUT (WATTS PEAK) 490 Race Street, San Jose, CA 95126 Phone (408 , . MAX. UNITS Pout Power Output f- 30 MHZ, Vcc= 50 V 175 Watts Pin Power Input At Rated Power Out 3.5 Watts Pg Power Gain At Rated Power Out 17 dB BVebo Voltage- Emitter to Base le-10 mA 4 Volts


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PDF S175-50 S175-50 175-5CERAMIC 25-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general BYISTOR ACR1ANS175-50 F625-9 indiana general F624-19 Acrian S175-50-3 s 175-50 "class AB Linear" hf
ACRIAN

Abstract: acrian inc
Text: 0182998 ACRI AN INC ACRIAN INC 97D 01215 D T^Jl-6? T7 dTIoIôe™ DDOiaiS 3 ■Mm jjiHi M , MAXIMUM RATINGS Maximum Power Dissipation @ 25 C Case Temperature Maximum Voltage and Current BVces , Maximum Temperatures Storage Temperature Operating JunctionTemperature -65to+150°C +200"C POWER OUTPUT VS POWER INPUT (TYPICAL) <220 H < 5 t-D 0. Si o S o £L f - 400 MHz Vcc- 28 Volts , 6.50 REF .256 REF 4.22 .25 .166 .010 1.0 2.0 POWER INPUT (WATTS) TYPICAL AMPLIFIER LINE UP Vcc s 28


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PDF 33-OJ GDG1E17 ACRIAN acrian inc
This article

Abstract: vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of , accordance to Eq 2 and 4. Both devices have very similar characteristics and are rated similarly in RF power , Devices Written by S.K. Leong Phone no. (805)484-4210 4 f u L t n 2 6 RF power , in Equation 7. Obviously, to have good RF performance, power gain and linearity, it is desirous to


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PDF namely988. AR346. AN1107. This article vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
2 TZ 11w

Abstract: UMIL25 UMIL60 acrian inc
Text: general purpose UHF power transistor designed for use through 400 MHz. It features gold metalization for , watt PEP or used in Class AB, B, or C at up to 5 watts continuous output power . ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C Case Temperature Maximum Voltage and Current BVces Collector , Temperature Operating JunctionTemperature 11W 55V 4.0 V 0.7 A -65to+150°C +200°C POWER OUTPUT VS POWER , .001 .1 .2 .3 .4 POWER INPUT (WATTS) TYPICAL AMPLIFIER LINE UP Vccs 28 Volts Frequency Ranges


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PDF 0511A -65to 2 TZ 11w UMIL25 UMIL60 acrian inc
B3-28

Abstract: B328 B12-28 B25-28 B3-28-2 acrian inc
Text: 0182998 ACRIAN INC ~T? »E^Dlfianfl ÜDD1SS1 7 S 3 - ¿> 7 GENERAL DESCRIPTION The B3-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operation in Class A, AB or C amplifiers and provides the maximum power output/ power , MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature Maximum Voltage and Current BVces , Storage Temperature Operating JunctionTemperature 10W 60V 4.0 V 1.0 A -65to+150°C +200° C POWER


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PDF B3-28 B3-28 -65to Vcc-28 B328 B12-28 B25-28 B3-28-2 acrian inc
N1137

Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
Text: COMMUNICATIONS ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C Case Temperature Maximum Voltage and , POWER OUTPUT VS POWER INPUT (TYPICAL) DIM Millimeter TOL Inches TOL A 24.76 .13 .975 .005 B 18.42 .13 , 2.59 .13 .102 .005 M 25.40 .25 1.000 .010 3 6 POWER INPUT (WATTS) TYPICAL AMPLIFIER LINE UP Vcc = , , Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 117 0182998 ACRIAN INC , CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output f-1.5-30MHz 100 Watts Pin Power Input


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PDF S100-12 S100-12 n1137 T-33-15 S100-12-3 lo10A N1137 S100-12-2 S100-12-3 HF power amplifier acrian inc
k 3683 transistor

Abstract: C2M70-28 UMIL25 UMIL70 UMIL70-2 acrian inc Transistor c2m70
Text: Maximum Power Dissipation @ 25% Case Temperature Maximum Voltage and Current BVces Collector to Emitter , Operating JunctbnTemperature 140 W 60V 4.0 V 8.0 A -65 to+150 X +200 °C POWER OUTPUT VS POWER INPUT (TYPICAL) 100i to H k-< 5 3 O OC Ili £ o a 0 2 4 6 8 10 POWER INPUT (WATTS) UMIL70 70 WATTS - 28 , ., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 189 0182998 ACRIAN , CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output 70 Watts Pin Power Input f. 400 MHz


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PDF 01fl2c UMIL70 225-400MHz C2M70-28. T-33-13 UMIL70 k 3683 transistor C2M70-28 UMIL25 UMIL70-2 acrian inc Transistor c2m70
2014 - GROUND BASED RADAR

Abstract: AIRBORNE DME vimostm
Text: RF power transistors. Rather than focusing on junction temperature measurement and modeling , Power Dissipation The amount of power being dissipated in the RF Transistor. The thermal , transistor data sheets in various ways: R(th) R The RF power transistor is comprised of a die of , in temperature.) - pulse width and duty cycle (High power pulsed RF transistors contain various , & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a


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PDF 1214-1400MHz 200uS GROUND BASED RADAR AIRBORNE DME vimostm
H100-28

Abstract: S15-28-2 acrian H100-50 30MHZ S15-28 acrian inc
Text: 0182998 ACRIAN INC DE JülflaTlfl 0001155 7 : ^ T-33- 11 GENERAL DESCRIPTION The S15-28 is , ruggedness and linearity and may be operated Class A, AB or C. ABSOLUTE MAXIMUM RATINGS Maximum Power , JunctionTemperature 35 W 60V 4.0 V 2.0 A -65 to +150 "C +200 °C POWER OUTPUT VS POWER INPUT (TYPICAL) <0 H H , .005 M 25.55 .25 1.006 .010 N 6.68 REF .263 REF .1 .2 .3 .4 POWER INPUT (WATTS) TYPICAL , TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output f- 30MHZ Vcc-28V 15 Watts Pin Power Input


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PDF T-33- S15-28 S15-28 H100-28 S15-28-2 acrian H100-50 30MHZ acrian inc
UMIL60

Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
Text: MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature Maximum Voltage and Current BVces , Maximum Temperatures Storage Temperature Operating JunctionTemperature -65 to +150 °C +200 °C POWER OUTPUT VS POWER INPUT (TYPICAL) 100 £ 80 t-< £ w 60 H 3 O OC 111 £ o Q. 40 20 I f-400 MHz - 3 6 9 12 POWER INPUT (WATTS) 15 UMIL60 60 WATTS - 28 VOLTS 225-400 MHz UHF COMMUNICATIONS , ., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 186 0182998 ACRIAN


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PDF 0D015G4 UMIL60 C2M60-28. 000120k T-33-13 UMIL60 C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
UMIL80

Abstract: UMIL10 j105 transistor acrian inc
Text: GENERAL DESCRIPTION The UMIL10 is a general purpose UHF power common emitter transistor , C at up to 15 watts continuous output power . ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ , Temperature -65 to +150°C Operating JunctionTemperature +200°C POWER OUTPUT VS POWER INPUT 2 <0 1 I- 1 I-< H Q. t-3 O OC Ui o Q. 0 1 2 3 4 5 POWER INPUT (WATTS) (TYPICAL) ———'- / f â , Pout Power Output 10 Watts Pin Power Input f_ 400 MHz 1.0 Watts Pg Power Gain Vcc- 28 V 10.0


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PDF UMIL10 UMIL80 j105 transistor acrian inc
ACRIAN

Abstract: DDG1151 S200-50 S200-50-2 S200-50-3 acrian inc
Text: device exhibits excellent linearity and ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation , Temperature 320 W 110 V 4.0 V 30 A -65to+150rC +200 C POWER OUTPUT VS POWER INPUT 200 160 120 9 U 3 > c u » » } L 2 4 .6 8 POWER INPUT (WATTS) S 2.0.0-50 200 WATTS - 50 VOLTS 30 MHz HF , CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output f«30MHz 200 Watts Pin Power Input 12 Watts Pg Power Gain Vc-50V 12 dB VSWR1 Load Mismatch Tolerance 30:1 c Collector


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PDF S200-50 -65to 150rC S200-50-3 ACRIAN DDG1151 S200-50-2 S200-50-3 acrian inc
78558

Abstract: F2563 T552
Text: 0 ; B i A 1 8 IM TMJJ «crian THíSDRA*rue is UNPuSLXSWED. I RELEASED FOR PVE^ICATION . T9 © C£PV*j«HT 19 «T AJ1P INCORPORATED. ALI. rWTERNAT ION*. ftififtTS «E5©*€3 -20.45 MAX -T.42±0.38 Í. OSG±. 0Î 52 5ECTIQN Z — Z SCALE 7 0.-7 -A- -14. 72±0. 39-C.55S±.015j 2.18-1 C.086J 2. 54±0.38 C. 7 00±.075J o-35 DEEP r.250J CAVITY NUMBERS FOR REP ONLY li. oc BD lOfsr 2o * i F 17 REVISIONS ZONE j LT* DESCRlfiTta^ ore i appo i C ; RL5E PER \f>R 44GÌ WAS 92-290E-2 10-2S-32 ¡ - -2. 39 C. 0943 T


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PDF 92-290E-2 10-2S-32 T9-28-S? Od-1225 78558C-7 T7TOS-36C8 i79c580 78558 F2563 T552
MPA202

Abstract: acrian inc
Text: +32 +34 Peak Envelope Power - dBm mm 0182998 ACRIAN INC uiiiiii ¿i il, ——r—■"T? , MHz HIGH OUTPUT POWER 1dB Compression Power 2.0 Watt Typical 1.5 Watt Typical 1.0 Watt Minimum , Gain Vdc- 15.0V 12.0 13.0 dB AGa Gain Flatness ±0.5 ±1.0 dB P1dB Power Out @ 1 dB Gain , ,C2 .01 nf chip C3 -.1jif INPUT«- C1 -41- MPA 202 £ ■O C2 »OUTPUT POWER GAIN VS , 1 10 100 1000 FREQUENCY (MHz) POWER GAIN vs FREQUENCY (TYPICAL


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PDF T-33-11 50dBm MPA202 acrian inc
2015 - MG1007-42

Abstract: MG1020-M16 1004mp MG1052-30 MSC1075M
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated , Contents Diode Products Power Transistor Products Overview: Diode Products 4 About RF & , Ceramic / GigaMite / EPSM MED - HIGH POWER RF SWITCHING & ATTENUATION: CHIPS Max Freq (GHz , HIGH POWER RF SWITCHING & ATTENUATION: Packaged Max Freq (GHz) 12 8 4 2 1 0.5 Typical CT , . All specifications apply at 25°C with 0.5W incident RF power in a 50 ohm system (both source & load) 3


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PDF MS4-009-13 MG1007-42 MG1020-M16 1004mp MG1052-30 MSC1075M
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: HAFO AB ABB ABB-IXYS SEMICONDUCTOR GmbH IXY ABB POWER ABP ABB SEMICONDUCTOR AG ABS ACRIAN INC.* ACR ADAMS-RUSSELL-SDI M/C ADVANCED LINEAR DEVICES ALD ADVANCED POWER TECHNOLOGY INC. APT ADVANCED SEMICONDUCTOR INC. ASI , CORP. / HARRIS HRS RECTRON REC RF MICRO-DEVICES RFD RF MONOLITHICS, INC. RFM RF POWER COMPONENTS , SVENSKA ELEKTRISKA AKTIEBOLAGET ASE AMERICAN MICROSEMICONDUCTOR AMM AMERICAN POWER DEVICES INC PDA , * EML ENGINEERING CENTRE "ELECTRODYNAMICS* ED ERICSSON COMPONENTS AB ERC EUPEC EUP EUROPEAN POWER


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
NIKKO NR 9600

Abstract: Triac bt 808 600cw GDS C25/0 sony KSM 213 DCP BYX36 NEC 10F triac SEMICON INDEXES BT135 gi 934 diod 2U12
Text: PLESSEY o GPS POLYFET RF DEVICES PLY POWERCHIP POP POWER INNOVATIONS LTD. PI POWER PHYSICS ' POWER , COMPONENTS' RECTRON REC RF MICRO-DEVICES RFD RF MONOLITHICS, INC. RFM RF POWER COMPONENTS, INC. RFPC RF , our users. Health Hazard Users of semiconductors are reminded that many devices, especially power , POWER ABP DIODES INC. Dll ABB SEMICONDUCTOR AG ABS DIOTEC ELECTRONICS CORP. DIO ACRIANINC.* ACR , DEVI CES ALD DIRECTED ENERGY INC. DIR ADVANCED POWER TECHNOLOGY INC. APT ADVANCED SEMICONDUCTOR


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PDF
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: VOLTAGE RANGE START-UP VOLTAGE RATED CURRENT RATED POWER RATED SPEED AIR FLOW STATIC AIR PRESSURE NOISE , 'ON '. 4 - 5 Input Power : Input Power shall be measured after 3 minutes of continuous rotation at , . 5.4 Avoid the damage, check the correct voltage and proper polarity before connecting with power . 5.5


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: insert combinations and many different housing options q Signal and power within a single connector


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


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PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
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