The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3082ETS8#PBF Linear Technology LT3082 - 200mA Single Resistor Low Dropout Linear Regulator; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LT3082MPST Linear Technology LT3082 - 200mA Single Resistor Low Dropout Linear Regulator; Package: SOT; Pins: 3; Temperature Range: -55°C to 125°C
LT3650EDD-8.2#PBF Linear Technology LT3650-8.X - High Voltage 2 Amp Monolithic 2-Cell Li-Ion Battery Charger; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LT3650EMSE-8.4#PBF Linear Technology LT3650-8.X - High Voltage 2 Amp Monolithic 2-Cell Li-Ion Battery Charger; Package: MSOP; Pins: 12; Temperature Range: -40°C to 85°C
LT3650IMSE-4.1#PBF Linear Technology LT3650-4.X - High Voltage 2 Amp Monolithic Li-Ion Battery Charger; Package: MSOP; Pins: 12; Temperature Range: -40°C to 85°C
LT3663EDCB#TRPBF Linear Technology LT3663 - 1.2A Step-Down Switching Regulator with Output Current Limit; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C

acrian inc Datasheets Context Search

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acrian motorola

Abstract: ACRIAN MPA201 RF01 acrian inc
Text: 1 Ennna 0182998 ACRIAN INC BBBBB _ T? DE |01fl5™ DD01D43 □ T T-33-11 GENERAL , £ 1 10 100 FREQUENCY (MHz) 1000 ACRIAN INC 1 17 D ■GlùSTifl QODlOMñ □ - T-33- MPA 201-6 , ", ER = 2.55 V TUNING + 0-30 1182998 ACRIAN INC DE | GlflSTifl OOOlCm 1 | D T-33-11 MPA 201-7 GAIN , (0656) 68021 Printed in USA 26 0182998 ACRI AN INC DiTl 0102^0 0D01044 H | D ' 77 1 T-33-11 MPA , ACRI AN INC DE^Olfianfi □ UUJiUHü 4 T-33-11 MPA 201*3 3rd ORDER INTERCEPT POINT vs FREQUENCY


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PDF 01fl5â DD01D43 T-33-11 MPA-201 40dBm 1MV309 acrian motorola ACRIAN MPA201 RF01 acrian inc
2N6198

Abstract: Acrian B12-28 ic 832 8 pin acrian inc B1228
Text:  ACRIAN INC DE ioifla^Tñ 00012S3 O isaiaiaBüiBiiaiiPssaR! GENERAL DESCRIPTION The B12-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operation in Class A, AB, or C amplifiers and provides the maximum power output/ power gain combination. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature , , Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 235 ACRIAN INC [ B12


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PDF 00012S3 B12-28 2N6198 Acrian ic 832 8 pin acrian inc B1228
ACRIAN

Abstract: acrian inc
Text: 0182998 ACRI AN INC ACRIAN INC 97D 01215 D T^Jl-6? T7 dTIoIôe™ DDOiaiS 3 ■Mm jjiHi M» «i h -WPI OTimii muH« Hinm v «A mnm WOTWW ■NMKH nemm «ìmiiwi * GENERAL DESCRIPTION The , , CF31 3LQ, United Kingdom, Phone (0656) 68021 REVA AUG1987 Printed in USA 197 0182998 ACRI AN INC ACRIAN INC 97D 01216 D T? Dlfjoifla™ GGDiaib S J 0105-12-2 ELECTRICAL CHARACTERISTICS SYMBOL , 0182998 ACRI AN INC AGRIAN INC L SMITH CHART 0105 T? DÊÏ HART } 12 J 97D 01217 D T'33-OJ â


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PDF 33-OJ GDG1E17 ACRIAN acrian inc
2 TZ 11w

Abstract: UMIL25 UMIL60 acrian inc
Text: ) SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE 0182998 ACRIAN INC SÊJOlflanfl DQDllflS 1 T '33 -07 , Kingdom, Phone (0656) 68021 Printed in USA 165 0182998 ACRI AN INC ]>F| 0105^0 0001104 7 —f-33 "07


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PDF 0511A -65to 2 TZ 11w UMIL25 UMIL60 acrian inc
indiana general

Abstract: BYISTOR ACR1ANS175-50 F625-9 indiana general F624-19 Acrian S175-50-3 s 175-50 "class AB Linear" hf S175-50
Text: 0182998 ACRIAN INC _JL-33-15 ~T? »ElOlflH™ D0Ü1141 5 I S175"50-4 S175-50 TEST CIRCUIT 2-30 MHz, 300 Watts Linear Amplifier Q1.Q1 ACR1ANS175-50 BYISTOR ACRIAN BYH C1, C3, C5, C6, C7, C8 0.1nF , Kingdom, Phone (0656) 68021 Printed in USA 128 0182998 ACRI AN INC T7 DE"|ülfl2Tiñ 97D 01147 GDD11M7 , NOTICE 0182998 ACRI AN INC DË^Diae^TÔ OüQimfl 3 T-33-ls S175-50-3 CO SERIES INPUT IMPEDANCE VS


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PDF S175-50 S175-50 175-5CERAMIC 25-240pF 75-480pF 2700pF F627-9, F625-9, F624-19, F627-8, indiana general BYISTOR ACR1ANS175-50 F625-9 indiana general F624-19 Acrian S175-50-3 s 175-50 "class AB Linear" hf
B3-28

Abstract: B328 B12-28 B25-28 B3-28-2 acrian inc
Text: 0182998 ACRIAN INC ~T? »E^Dlfianfl ÜDD1SS1 7 S 3 - ¿> 7 GENERAL DESCRIPTION The B3-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operation in Class A, AB or C amplifiers and provides the maximum power output/power gain combination. -III»!! B3-28 3 WATTS - 28 VOLTS 100-200 MHz VHF COMMUNICATIONS ABSOLUTE , , CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 233 0182998 ACRI AN INC DËJûlfiBTlÃ


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PDF B3-28 B3-28 -65to Vcc-28 B328 B12-28 B25-28 B3-28-2 acrian inc
N1137

Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
Text: , Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 117 0182998 ACRIAN INC , 0182998 ACRI AN INC 97D 01135 D "7*- GENERAL DESCRIPTION The S100-12 is designed for common emitter HF, SSB applications from a 12 volt supply. It may be operated Class A, AB or C. The device has emitter ballasting for ruggedness and reliability. S100-12 100 WATTS - 12.5 VOLTS 1.5-30 MHz HF , AN INC T7 97D n1137 DË~| Diñaba 0001137 T T-33-15 S100-12-3 CO s x o 111 o z < SERIES


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PDF S100-12 S100-12 n1137 T-33-15 S100-12-3 lo10A N1137 S100-12-2 S100-12-3 HF power amplifier acrian inc
k 3683 transistor

Abstract: C2M70-28 UMIL25 UMIL70 UMIL70-2 acrian inc Transistor c2m70
Text: 0182998 ACRI AN INC "T7 DE ■01fl2c]c¡ñ DDGIEG? 4 Y-J s- rJ ■mm mm« mwifn mr w^ni hinmi imwi «nnmi r^k mimn mnhm »huhi »bbbbssb i GENERAL DESCRIPTION The UMIL70 is a double input matched , ., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 189 0182998 ACRIAN INC T? DTjDlflanfl □□DIEGA b T-33-13 UMIL70-2 ELECTRICAL CHARACTERISTICS 1 SYMBOL , (VOLTS) SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE 0182998 ACRI AN INC T? DlTlDiaSW


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PDF 01fl2c UMIL70 225-400MHz C2M70-28. T-33-13 UMIL70 k 3683 transistor C2M70-28 UMIL25 UMIL70-2 acrian inc Transistor c2m70
UMIL60

Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
Text: 0182998 ACRI AN INC ~T? frjGlflSTTä 0D015G4 1 D GENERAL DESCRIPTION The UMIL60 is a double input matched broadband transistor specifically intended for use in the 225-400 MHz frequency band , ., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 186 0182998 ACRIAN INC ~T? »T^DIÖBTTÖ D0Q12DS 0 T-33-13 UMIL60-2 ELECTRICAL CHARACTERISTICS 1 SYMBOL , SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE 0182998 ACRI AN INC T? DE"! DIAS'Hfl 000120k E T


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PDF 0D015G4 UMIL60 C2M60-28. 000120k T-33-13 UMIL60 C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
UMIL80

Abstract: UMIL10 j105 transistor acrian inc
Text: BE SUBJECT TO CHANGE WITHOUT NOTICE 0182998 ACRI AN INC _97D 0 1192 D T'33 C^T ACRIAN INC T? Dlf , 172 0182998 AORIAN INC AGRIAN INC _97D 0 1191 D -T-33-09 ~T? ÖFIoiaST^Ü DGDini 4 I


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PDF UMIL10 UMIL80 j105 transistor acrian inc
H100-28

Abstract: S15-28-2 acrian H100-50 30MHZ S15-28 acrian inc
Text: 0182998 ACRIAN INC DE JülflaTlfl 0001155 7 : ^ T-33- 11 GENERAL DESCRIPTION The S15-28 is designed for driver and output applications in the HF, 1.6-30 MHz range. It features state-of-the-art ruggedness and linearity and may be operated Class A, AB or C. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo , , CF31 3LQ, United Kingdom, Phone (0656) 68021 REV A AUG 1987] Printed in USA 104 0182998 ACRI AN INC


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PDF T-33- S15-28 S15-28 H100-28 S15-28-2 acrian H100-50 30MHZ acrian inc
ACRIAN

Abstract: DDG1151 S200-50 S200-50-2 S200-50-3 acrian inc
Text: WITHOUT NOTICE 0182998 ACRIAN INC DEÇOIS ETTñ 0001152 S | S200-50-3 10 OT CL S < w o-1 Icq VS , 0182998 ACRI AN INC 97D 01150 D GENERAL DESCRIPTION The S200-50 is a common emitter, HF, SSB device intended for operation from a 50 volt supply. It may be operated in Class A, AB or C. The device exhibits excellent linearity and ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation , 0182998 ACRI AN INC T-33-15 TPDr|01fl2^fl DDG1151 3 S200-50-2 ELECTRICAL CHARACTERISTICS SYMBOL


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PDF S200-50 -65to 150rC S200-50-3 ACRIAN DDG1151 S200-50-2 S200-50-3 acrian inc
acrian RF POWER TRANSISTOR

Abstract: BAL0204-125 225-400MHz Q12-200 0105-50 acrian TG T-33-15 acrian inc
Text: SUBJECT TO CHANGE WITHOUT NOTICE 0182998 ACRIAN INC Ç)7D ni1R1_ D DE iQlflETTñ DOOllbl t J T , 0182998 ACRI AN INC 97D 01159 QlñSnñ OODllST fi T-33-15 GENERAL DESCRIPTION The 0204-125 balanced transistor is designed to operate Class, A, AB or C over the 225-400MHz frequency range. It is an , , CF31 3LQ, United Kingdom, Phone (0656) 68021 REV A AUG 19871 Printed in USA 141 0182998 ACRI AN INC , 0182998 ACRI AN INC _97D 01162 T-33-15 ~T? DE [DIAE^S DDDllt]2 Ô TEST CIRCUIT OF A 125 WATT, 225-400MHZ


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PDF T-33-15 225-400MHz BAL0204-125. acrian RF POWER TRANSISTOR BAL0204-125 Q12-200 0105-50 acrian TG T-33-15 acrian inc
MPA202

Abstract: acrian inc
Text: +32 +34 Peak Envelope Power - dBm mm 0182998 ACRIAN INC uiiiiii ¿i il, ——r—■"T? , 0182998 AGRIAN INC T? DE J OlñETTñ 0001050 ñ T-33-11 GENERAL DESCRIPTION The MPA 202 is a HYBRID AMPLIFIER MODULE designed for broadband performance up to 200 MHz in a format suitable for , INC "ì? ELECTRICAL CHARACTERISTICS DE lülflETífl 0001051 0 BS D T-33-11 MPA 202-2 SYMBOL , NOTICE 1000 0182998 ACRI AN INC j)if| dlSE^fl □□G1D5E 1 | . D v T-33-11 MPA 202-3 INPUT VSWR


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PDF T-33-11 50dBm MPA202 acrian inc
2014 - GROUND BASED RADAR

Abstract: AIRBORNE DME vimostm
Text: VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Acrian , Inc . Thermal Time Constant for High Piower


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PDF 1214-1400MHz 200uS GROUND BASED RADAR AIRBORNE DME vimostm
78558

Abstract: F2563 T552
Text: 0 ; B i A 1 8 IM TMJJ «crian THíSDRA*rue is UNPuSLXSWED. I RELEASED FOR PVE^ICATION . T9 © C£PV*j«HT 19 «T AJ1P INCORPORATED. ALI. rWTERNAT ION*. ftififtTS «E5©*€3 -20.45 MAX -T.42±0.38 Í. OSG±. 0Î 52 5ECTIQN Z — Z SCALE 7 0.-7 -A- -14. 72±0. 39-C.55S±.015j 2.18-1 C.086J 2. 54±0.38 C. 7 00±.075J o-35 DEEP r.250J CAVITY NUMBERS FOR REP ONLY li. oc BD lOfsr 2o * i F 17 REVISIONS ZONE j LT* DESCRlfiTta^ ore i appo i C ; RL5E PER \f>R 44GÌ WAS 92-290E-2 10-2S-32 ¡ - -2. 39 C. 0943 T


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PDF 92-290E-2 10-2S-32 T9-28-S? Od-1225 78558C-7 T7TOS-36C8 i79c580 78558 F2563 T552
This article

Abstract: vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left the field, but others have come to take their places. The technology has improved over the course of the years mainly by , ACRIAN ISOFET DIE SERIES VMIL20FT 20.0 175 VMIL40FT 40.0 175 VMIL120FT 120.0 175 13 13 13


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PDF namely988. AR346. AN1107. This article vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
2015 - MG1007-42

Abstract: MG1020-M16 1004mp MG1052-30 MSC1075M
Text: No file text available


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PDF MS4-009-13 MG1007-42 MG1020-M16 1004mp MG1052-30 MSC1075M
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: HAFO AB ABB ABB-IXYS SEMICONDUCTOR GmbH IXY ABB POWER ABP ABB SEMICONDUCTOR AG ABS ACRIAN INC .* ACR ADAMS-RUSSELL-SDI M/C ADVANCED LINEAR DEVICES ALD ADVANCED POWER TECHNOLOGY INC . APT ADVANCED SEMICONDUCTOR INC . ASI AEG/AEGTELEFUNKEN/TEMIC TFN AEI AEI ALLEGRO MICROSYSTEMS INC . ALG ALLEN-BRADLEY Co. ABY ALLMANNA SVENSKA ELEKTRISKA AKTIEBOLAGET ASE AMERICAN MICROSEMICONDUCTOR AMM AMERICAN POWER DEVICES INC PDA , * ACRIAN see GHZ = GHZ Technology USA K/EU see also SML = SEMELAB ADE ANALOG DEVICES INC A SEI-ELBATEX


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
NIKKO NR 9600

Abstract: Triac bt 808 600cw GDS C25/0 sony KSM 213 DCP BYX36 NEC 10F triac SEMICON INDEXES BT135 gi 934 diod 2U12
Text: POWER ABP DIODES INC . Dll ABB SEMICONDUCTOR AG ABS DIOTEC ELECTRONICS CORP. DIO ACRIANINC.* ACR DIOTEC ELEKTRONISCHE BAUELEMENTE GmbH DIP ADAMS-RUSSELL-SDI M/C DIONICS INC . DIN ADVANCED LI NEAR DEVI CES ALD DIRECTED ENERGY INC . DIR ADVANCED POWER TECHNOLOGY INC . APT ADVANCED SEMICONDUCTOR INC . ASI AEG / AEG TELEFUNKEN / TEMIC TFN E AEI AEI ALLEGRO MICROSYSTEMS INC . ALG EBAUCHES , AKTIEBOLAGET ASE ECI SEMICONDUCTOR ECI • ■“■*■• AMELCO SEMICONDUCTORS* EDAL INDUSTRIES INC . EDL


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PDF
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: No file text available


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: No file text available


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


Original
PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
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