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TD277Y3025RMP GE Critical Power SPD DIN RAIL 277 WYE 25KA UL
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LAMBDA iCG

Abstract: Nemic Lambda alpha 600 CPFE500F lambda lga f Lambda VEGA 900 NV-100 PF1000A-360 RFE1000 pfe tdk-lambda Nemic-Lambda users
Text: 1.5 kV AC output to earth simplify its use in demanding medical applications. Series NV Power , AC Format open frame optional case Warranty 4 NV Power NVM 175 W Power 3 years , W 1­6 3.2 ­ 32 V 90 ­ 264 V AC closed case 3 years NV Power 700 W 700 W (1150 W*) 1450 W , NV Power from 100 W to 300 W Medical approvals available NV Power is based around a configurable , rectifiers in a resonant topology. The NV -100 up to the NV -300 have class leading power densities i.e.: 8.3


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PDF 1077-Gometz-le-Chatel LAMBDA iCG Nemic Lambda alpha 600 CPFE500F lambda lga f Lambda VEGA 900 NV-100 PF1000A-360 RFE1000 pfe tdk-lambda Nemic-Lambda users
2003 - Not Available

Abstract: No abstract text available
Text: ) IC  VBE 0 Forward current transfer ratio hFE 0 Noise voltage NV (mV) 0 50 µA , on na tin nc ue e/ d 5˚ • Low noise voltage NV • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and automatic insertion through , 150 °C Tstg −55 to +150 °C Collector current Peak collector current Collector , cutoff current (Base open) ICEO hFE VCE = 5 V, IC = 2 mA Pl Collector-emitter saturation


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PDF 2002/95/EC) 2SC3929, 2SC3929A 2SA1531 2SA1531A SC-70
2014 - Not Available

Abstract: No abstract text available
Text: emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC , (2) Tamb = 25 °C IC (mA) hFE = f(IC) (1) Tamb = 100 °C -102 (3) (3) VCE = -50 V , collector-emitter saturation voltage VCEsat High collector current capability IC High collector current gain hFE , current - - -0.5 A hFE DC current gain 70 130 - VCE = -10 V; IC = -50 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product


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PDF PBHV9560Z OT223 SC-73) PBHV8560Z AEC-Q101
2014 - Not Available

Abstract: No abstract text available
Text: hFE DC current gain 70 130 - VCE = -10 V; IC = -10 mA; Tamb = 25 °C Scan or click , - - -100 nA hFE DC current gain VCE = -10 V; IC = -10 mA; Tamb = 25 °C 70 , emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C aaa-013915 200 hFE , -10 V (3) Tamb = −55 °C -102 Tamb = 25 °C (2) Tamb = 25 °C -10 hFE = f(IC , voltage VCEsat High collector current capability IC High collector current gain hFE at high IC AEC-Q101


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PDF PBHV3160Z OT223 SC-73) AEC-Q101
2014 - MAT01AH

Abstract: No abstract text available
Text: match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/ °C maximum High hFE : 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High , voltage of 40 µV, temperature drift of 0.15 µV/ °C , and hFE matching of 0.7%. Rev. D High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector , °C NOISE VOLTAGE DENSITY ( nV /√Hz) 25 TEMPERATURE ( °C ) COLLECTOR CURRENT (A) 1 0.1 0


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PDF MAT01 MAT01 MAT01AH MAT01AHZ MAT01GH MAT01GHZ D00282-0-9/14 MAT01AH
Not Available

Abstract: No abstract text available
Text: ) • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package , −100 mA 200 mW 150 °C −55 to +150 Marking Symbol: • 2SA1034: F • 2SA1035: H °C ■Electrical Characteristics Ta = 25°C ± 3°C 2SA1035 2SA1034 2SA1035 an , *2 hFE VCE = −5 V, IC = −2 mA V VCB = −10 V, IE = 0 Collector-emitter cutoff , ˆ’5 V, IE = 2 mA, f = 200 MHz NV Noise voltage − 0.7 VCE = −10 V, IC = −1 mA, GV = 80


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PDF 2002/95/EC) 2SA1034, 2SA1035 2SC2405, 2SC2406 2SA1034
2003 - Not Available

Abstract: No abstract text available
Text: €¢ High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO • Low noise voltage NV 12.9±0.5 M Di ain sc , 2 : Collector 3 : Base TO-92-B1 Package mW °C −55 to +150 2.5+0.6 –0.2 mA 300 0.45+0.15 –0.1 0.45+0.15 –0.1 2.3±0.2 Parameter °C Symbol , transfer ratio * hFE VCE = 10 V, IC = 2 mA VCE(sat) IC = 10 mA, IB = 1 mA 0.05 VCB = 10 V


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PDF 2SD1010
2007 - Not Available

Abstract: No abstract text available
Text: Ambient temperature Ta ( °C ) 0 200 µA Forward current transfer ratio hFE 0 80 pla d in , amplification Complementary to 2SA1531G ■Package • Low noise voltage NV • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and automatic insertion , °C Storage temperature Tstg −55 to +150 °C ■Electrical Characteristics Ta = 25 , Collector-emitter cutoff current (Base open) ICEO hFE VCE = 5 V, IC = 2 mA tin ue Parameter on


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PDF 2002/95/EC) 2SC3929G 2SA1531G
2SD2345G

Abstract: No abstract text available
Text: transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · High emitter-base voltage (Collector open) VEBO · Low noise voltage NV · Code SSMini3-F3 · Marking Symbol: 1Z · Pin Name 1 , ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p , nA ICEO VCE = 20 V, IB = 0 1 µA hFE VCE = 10 V, IC = 2 mA 2 000 VCE(sat , T hFE 400 to 800 600 to 1 200 1 000 to 2 000 Publication date: June 2007


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PDF 2002/95/EC) 2SD2345G 2SD2345G
2004 - Not Available

Abstract: No abstract text available
Text: INTERFACE DIN 8-BIT NV MEMORY 7 W 6 L 5 MAX5422 MAX5423 MAX5424 H GND TDFN (3mm x 3mm) L POR 4 8 W GND CS 3 CS H 2 DIN Functional Diagram , Upon Power-Up or Interface Command o 3mm x 3mm x 0.8mm TDFN Package o 35ppm/ °C End-to-End Resistance Temperature Coefficient o 5ppm/ °C Ratiometric Temperature Coefficient o 50kΩ, 100kΩ, and , / °C end-to-end and only 5ppm/ °C ratiometric. This makes the devices ideal for applications


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PDF 256-Tap, 35ppm/Â 500nA MAX5422/MAX5423/MAX5424
2SD1149

Abstract: XN05553G
Text: f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to , ) ICEO VCE = 60 V, IB = 0 1.0 µA hFE VCE = 10 V, IC = 2 mA 400 2 000 hFE , ) Forward current transfer ratio hFE ratio * Conditions Min Typ Max 0.99 Unit /Large) Collector-emitter saturation voltage Noise voltage Transition frequency VCE(sat) NV fT , le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou


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PDF 2002/95/EC) XN05553G 2SD1149 XN05553G
Not Available

Abstract: No abstract text available
Text: temperature Ta ( °C ) 100 0 Transition frequency fT (MHz) 40 10 Noise voltage NV (mV) 0 , (Collector open) VEBO 15 mA 50 mA 300 mW 150 °C −55 to +150 °C , transfer ratio hFE VCE = 10 V, IC = 2 mA 400 hFE ratio * hFE (Small VCE = 4 V, IC = 5 mA , ) Noise voltage Transition frequency NV fT IC = 10 mA, IB = 1 mA 0.05 0.20 V VCE = 10 , ratio hFE 1 25°C Ta = 75°C 0.1 −25°C 10 100 an IE = 0 f = 1 MHz Ta = 25Â


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PDF 2002/95/EC) XN05553 XN5553)
Not Available

Abstract: No abstract text available
Text: orm ge /e a n/ tio . n.  Low noise voltage NV  High forward current transfer ratio hFE , 50 mA 100 mA 150 mW 150 °C –55 to +150 °C Collector current IC , ) te na M ain V VCB = 10 V, IE = 0 0.1 mA VCE = 10 V, IB = 0 1 mA hFE , voltage NV 0.7 180 IC = 100 mA, IB = 10 mA VCB = 5 V, IE = –2 mA, f = 200 MHz Pl , classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Merking symbol SR


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PDF 2002/95/EC) 2SC3929 2SA1531
Not Available

Abstract: No abstract text available
Text: noise voltage NV  High forward current transfer ratio hFE  Mini type package, allowing , 50 mA 100 mA 200 mW 150 °C –55 to +150 °C Collector current IC , ) te na M ain V VCB = 10 V, IE = 0 0.1 mA VCB = 10 V, IB = 0 1 mA hFE , voltage NV 0.7 180 IC = 100 mA, IB = 10 mA VCB = 5 V, IE = –2 mA, f = 200 MHz 200 , classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Merking symbol TR


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PDF 2002/95/EC) 2SC2405 2SA1034
2006 - Not Available

Abstract: No abstract text available
Text: Digital Potentiometers o 5ppm/ °C Ratiometric Temperature Coefficient o 10kΩ and 50kΩ End-to-End , MAX5496 MAX5497 W2 PKG CODE INTERFACE DIN 13 CS TEMP RANGE 9 1 N.C. 15 PART 10 SCLK 16 Ordering Information PINPACKAGE 11 DIN 13 Applications Gain and Offset , -pin TQFN package and are specified over the extended (-40°C to +85°C) temperature range. o 35ppm/ °C , available with a 35ppm/ °C end-to-end temperature coefficient. The ratiometric temperature coefficient is


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PDF 10-Bit, MAX5494 MAX5495 T1655-2 MAX5499
2003 - Not Available

Abstract: No abstract text available
Text: voltage NV °C Marking symbol 1Z : Parameter ce /D isc on tin ue ■Electrical , hFE Ta = 75°C −25°C 1 10 100 an en Noise voltage NV (mV) int Ma , Tj Storage temperature Tstg 100 mA 125 °C −55 to +125 1: Base 2: Emitter , te on na tin nc ue e/ d 3 • High forward current transfer ratio hFE • Low , nA ICEO VCE = 20 V, IB = 0 1 µA hFE VCE = 10 V, IC = 2 mA 2 000  VCE


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PDF 2SD2345 SC-75
2003 - Not Available

Abstract: No abstract text available
Text: forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High , (Collector open) VEBO 15 V 50 mA 100 mA 400 mW 150 °C −55 to +150 °C Collector current IC Peak collector current ICP Collector power dissipation PC , Forward current transfer ratio * hFE VCE = 10 V, IC = 2 mA VCE(sat) IC = 10 mA, IB = 1 mA , Transition frequency fT Noise voltage NV Conditions Min Typ Max Unit V 0.1 1


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PDF 2002/95/EC) 2SD1995
2010 - Not Available

Abstract: No abstract text available
Text: General Description CS SCLK(INC) DIN (U/D) SPI/UD Pin Configurations 12 11 10 9 , continued at end of data Inc. UCSP is a trademark of Maxim Integrated Products,sheet. DIN (U/D) N.C , Selector Guide). The nominal resistor temperature coefficient is 35ppm/ °C end-to-end, and only 5ppm/ °C , Memory ♦ 16-Pin (3mm x 3mm x 0.8mm) TQFN or 14-Pin TSSOP Package ♦ 35ppm/ °C End-to-End Resistance Temperature Coefficient ♦ 5ppm/ °C Ratiometric Temperature Coefficient ♦ 10kΩ and 50kΩ End-to-End


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PDF MAX5481â MAX5484 10-Bit, MAX5481ETE+ MAX5481EUD+
Not Available

Abstract: No abstract text available
Text: noise voltage NV  High forward current transfer ratio hFE  Mini type package, allowing , 50 mA 100 mA 200 mW 150 °C –55 to +150 °C Collector current IC , ) te na M ain V VCB = 10 V, IE = 0 0.1 mA VCB = 10 V, IB = 0 1 mA hFE , voltage NV 0.7 180 IC = 100 mA, IB = 10 mA VCB = 5 V, IE = –2 mA, f = 200 MHz 200 , classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Merking symbol TR


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PDF 2002/95/EC) 2SC2406 2SA1035
2010 - Not Available

Abstract: No abstract text available
Text: POR CS DIN 16-BIT NV RAM 8-BIT LATCH 9 SCLK DIN SPI INTERFACE 10 13 , 100kΩ, respectively. These devices have a low 35ppm/ °C end-to-end temperature coefficient, and , (Voltage-Divider Mode) o 256 Tap Positions o 35ppm/ °C End-to-End Resistance Temperature Coefficient o 5ppm/ °C , ±1.3mA Continuous Power Dissipation (TA = +70°C) 16-Pin TQFN (derate 17.5mW/ °C above +70°C) .1398mW 14-Pin TSSOP (derate 9.1mW/ °C above +70°C).727mW Operating Temperature Range


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PDF 256-Tap, MAX5487/MAX5488/MAX5489 MAX5487 MAX5488 MAX5489 35ppm/Â MAX5487/MAX5488/MAX5489
2007 - Not Available

Abstract: No abstract text available
Text: MAX5488 MAX5489 WB LB 16 1 2 3 4 CS HB DIN I.C. POR CS SCLK 16-BIT NV RAM 8-BIT LATCH 9 VDD DIN 10 WA SCLK SPI INTERFACE 11 13 HA , 50kΩ and 100kΩ, respectively. These devices have a low 35ppm/ °C end-to-end temperature , QFN or 14-Pin TSSOP Packages ♦ ±1 LSB INL, ±0.5 LSB DNL (Voltage-Divider Mode) ♦ 35ppm/ °C End-to-End Resistance Temperature Coefficient ♦ 5ppm/ °C Ratiometric Temperature Coefficient ♦ 10kâ


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PDF 256-Tap, MAX5487/MAX5488/MAX5489 MAX5487 MAX5488 MAX5489 MAX5487/MAX5488/MAX5489
2010 - AD8512

Abstract: AMP02 MAT12 NPN MATCHED PAIRS 1N914 MAT02 MAT-12 Package TO-78
Text: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV /Hz maximum @ 100 Hz , ( hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signalto-noise ratios. The , available monolithic amplifiers. Excellent matching of the current gain ( hFE ) to about 0.5% and low VOS of , CHARACTERISTICS VCB = 15 V, IO = 10 A, TA = 25°C, unless otherwise specified. Table 1. Parameter DC AND AC , /Comments Min Typ hFE IC = 1 mA -40°C TA +85°C IC = 10 A -40°C TA +85°C 10 A IC 1 mA


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PDF MAT12 MAT12 22306-A MAT12AHZ D09044-0-7/10 AD8512 AMP02 NPN MATCHED PAIRS 1N914 MAT02 MAT-12 Package TO-78
2005 - Not Available

Abstract: No abstract text available
Text: 19-3708; Rev 1; 7/05 10-Bit, Nonvolatile, Linear-Taper Digital Potentiometers ♦ 35ppm/ °C End-to-End Resistance Temperature Coefficient ♦ 5ppm/ °C Ratiometric Temperature Coefficient ♦ 10kâ , . TQFN 11 10 9 13 14 15 VSS SPI/UD 12 VDD DIN (U/D) *SEE FUNCTIONAL , N.C. PART 11 W GND GND Ordering Information DIN (U/D) 12 TOP VIEW , Selector Guide). The nominal resistor temperature coefficient is 35ppm/ °C end-to-end, and only 5ppm/ °C


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PDF 10-Bit, 35ppm/Â MAX5481EUD* T1633F-3 MAX5481â MAX5484
2010 - Not Available

Abstract: No abstract text available
Text: data sheet. SCLK(INC) DIN (U/D) SPI/UD 16 3 N.C. 5 N.C. 8 VSS N.C. 6 , /UD 12 GND DIN (U/D) *SEE FUNCTIONAL DIAGRAM *CONNECT EXPOSED PAD TO VSS 16 + , / °C end-to-end, and only 5ppm/ °C ratiometric, making these devices ideal for applications requiring , 0.8mm) TQFN or 14-Pin TSSOP Package o 35ppm/ °C End-to-End Resistance Temperature Coefficient o 5ppm/ °C Ratiometric Temperature Coefficient o 10kΩ and 50kΩ End-to-End Resistor Values o


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PDF MAX5481â MAX5484 10-Bit, MAX5481ETE+ MAX5481EUD+ MAX5481* MAX5482*
2013 - Not Available

Abstract: No abstract text available
Text: nA hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 100 200 - VCE = , High collector current gain ( hFE ) at high IC AEC-Q101 qualified 3. Applications • • • â , IC collector current - - -0.25 A hFE DC current gain 100 200 - VCE = -10 V; IC = -50 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for , disclaimers. 9 December 2013 © NXP N.V . 2013. All rights reserved 2 / 14 PBHV9040X NXP


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PDF PBHV9040X SC-62) PBHV8540X. AEC-Q101
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