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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

a639 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
5718 TUBE

Abstract: ecc70 tube 5718 on 5718 subminiature 5718 5800 tube
Text: UERSEY, U.S.A. OCTOBER 1, 1959 PLATE »^639 5718 f- tentative data tung-sol -v continued from , , NEW UERSEY, U.S.A. OCTOBER 1, 1959 PLATE »^639 5718 tentative data r—- tun6-s0l -s CONTINUED FROM , , 8L00MF1ELD, NEW UERSEY, U.S.A. OCTOBER 1, 1959 PLATE »^639 tentative data 5718 r


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PDF 8L00MF1ELD, 5718 TUBE ecc70 tube 5718 on 5718 subminiature 5718 5800 tube
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , €“46.5 –48.7 –50.6 –53.4 –55.9 –58.4 –61.1 –63.9 –67.3 –70.6 –74.0 –78.0 â


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1996 - A1357 transistor

Abstract: a639 transistor transistor a1042 a1718
Text: +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , 84.4 65.5 43.1 19.0 –7.0 –30.7 –49.4 –63.9 –77.6 –86.9 –94.7 –99.8 â


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2006 - Not Available

Abstract: No abstract text available
Text: f2a2ed17-fd10-4181- a639 -7507b57206ef © 2006-2013 IntelliData.net KEMET


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PDF CK06BX104K7303 C062K104K1X5CA7303, CK06BX104K7303) f2a2ed17-fd10-4181-a639-7507b57206ef
1995 - a639 transistor

Abstract: No abstract text available
Text: Characteristics2 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 39/19 , €“55.3 –58.3 –61.5 –63.9 –63.8 S22 Ang Mag –6.4 –10.7 –9.6 –9.4 –9.4 â


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PDF UTO-1025 5963-2525E a639 transistor
1996 - a639 transistor

Abstract: transistor A649
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , €“37.7 –41.5 –45.2 –49.0 –52.7 –56.4 –60.2 –63.9 –67.5 –71.2 –74.9 –78.6 â


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1995 - transistor a458 pin configuration

Abstract: No abstract text available
Text: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , €“37.7 –41.5 –45.2 –49.0 –52.7 –56.4 –60.2 –63.9 –67.5 –71.2 –74.9 –78.6 â


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PDF 100MHz 5963-2479E transistor a458 pin configuration
1995 - a1718

Abstract: No abstract text available
Text: +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 84.4 65.5 43.1 19.0 –7.0 –30.7 –49.4 –63.9 –77.6 –86.9 –94.7 –99.8 â


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PDF 500MHz 5963-2546E a1718
1998 - k a1046

Abstract: No abstract text available
Text: TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION , −21.2 −35.3 −46.5 −54.0 −58.9 −63.9 −71.0 −79.0 −86.7 −95.1 â


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2009 - Not Available

Abstract: No abstract text available
Text: , C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon , €“6.76 1910 3.67 –6.67 1920 3.62 –6.57 1930 3.56 –6.48 1940 3.50 –6.39 , C5, C10, C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor


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PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63
2009 - Not Available

Abstract: No abstract text available
Text: , 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 , €“6.57 1930 3.56 –6.48 1940 3.50 –6.39 1950 3.45 –6.30 1960 3.40 â , , Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key


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PDF PTMA210152M PTMA210152M 15-watt, 20-lead PG-DSO-20-63
1998 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , ˆ’31.8 −41.7 −47.3 −49.1 −49.4 −51.0 −53.6 −56.8 −60.1 −63.9 −69.8 −76.5 â


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.440 0.435 0.429 0.424 0.420 0.416 0.412 0.407 −56.7 −58.1 −59.7 −61.1 −62.5 −63.9 , 0.249 0.219 0.189 0.165 −16.8 −31.3 −41.9 −49.1 −55.4 −60.4 −63.9 −68.0 â


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1997 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , €“42.7 –54.0 –54.2 –56.7 –59.8 –58.5 –59.7 –62.5 –61.2 –62.6 –64.9 –63.9 â , €“57.7 –59.2 –61.3 –63.9 –66.5 –68.9 –72.4 –75.7 –78.4 –82.8 –86.1 â


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2013 - TCG035QVLPAANN-AN00

Abstract: No abstract text available
Text: Specification Unit 76.9(W) ×63.9 (H)×4.9(D) mm Active area 70.56(W)×52.92(H) (8.8cm/3.5 inch


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PDF TQ3C-8EAF0-E1YAD10-01 TCG035QVLPAANN-AN00 TCG035QVLPAANN-AN00
Not Available

Abstract: No abstract text available
Text: . Mechanical specifications Item Specification Unit 76.9(W) ×63.9 (H)×4.9(D) mm Active area


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PDF TQ3C-8EAF0-E1YAJ05-00 TG035QVLQAANN-GN00
2011 - Not Available

Abstract: No abstract text available
Text: €“64.0 –64.0 –63.9 –63.7 Page 6 of 7 2SC5594 Preliminary Package Dimensions Package


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PDF 2SC5594 R07DS0278EJ0300 REJ03G0749-0200) PTSP0004ZA-A R07DS0278EJ0300
2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’34.0 −44.0 −54.3 −63.9 −72.7 −81.2 −90.1 −98.2 −106.3 −114.0 −121.6 â


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2014 - A7922

Abstract: No abstract text available
Text: ˆ’8.16 −8.01 −8.06 −8.13 −8.14 −8.00 −8.13 −7.86 −7.65 −7.20 −6.39 â


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PDF TQP3M9009 OT-89 TQP3M9009 A7922
2011 - TCG035QVLPAANN-AN00

Abstract: No abstract text available
Text: . Mechanical specifications Item Specification Unit 76.9(W) ×63.9 (H)×4.9(D) mm Active area


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PDF TQ3C-8EAF0-E1YAD10-00 TCG035QVLPAANN-AN00 TCG035QVLPAANN-AN00
A639

Abstract: No abstract text available
Text: and data switch S A639 P O ST AM P OUTPUT SWITCH E N AB LE Figure 11. SA639 System


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PDF SA639 SA639 24-lead 800ns 10kHz SR00039 A639
Not Available

Abstract: No abstract text available
Text: 0 i 1 O l O f 0 1 0 1 E 0 1 0 1 0 1 0 E 1 (HZ €639 0 1 0 1 OO N OA O E


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PDF QL16X24B 16-by-24 84-pin 144-pin 169-pin 16-bit 16x24B TGD3030 00G025S
2001 - Transistor a1488

Abstract: No abstract text available
Text: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’41.7 −46.6 −50.8 −54.6 −57.9 −61.2 −63.9 −66.3 −68.8 −70.8 −72.8 −74.5 â


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2004 - te330

Abstract: No abstract text available
Text: 10 MHz, −90.4 Degrees Crosstalk at 10 MHz, −63.9 dB Figure 4. Crosstalk vs Frequency 8


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PDF TS5V330 SCDS164D te330
2004 - Not Available

Abstract: No abstract text available
Text: 10 MHz, −90.4 Degrees Crosstalk at 10 MHz, −63.9 dB Figure 4. Crosstalk vs Frequency 8


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PDF TS5V330 SCDS164D
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