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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

a1668 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - transistor a1723

Abstract: No abstract text available
Text: Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90 , .059 .077 .182 .366 .620 –169.7 –166.8 –167.8 –173.7 174.0 139.1 61.9 30.4 13.5


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1995 - Not Available

Abstract: No abstract text available
Text: 2 0 100 Frequency, MHz Thermal Characteristics1 θJC Active Transistor Power Dissipation , .077 .182 .366 .620 –169.7 –166.8 –167.8 –173.7 174.0 139.1 61.9 30.4 13.5 â


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PDF 500MHz 5963-2556E
Not Available

Abstract: No abstract text available
Text: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , ˆ’36.2 800 0.447 −154.4 3.691 87.1 0.086 51.6 0.442 −37.1 1000 0.435 −166.8


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PDF 2SC5086
Not Available

Abstract: No abstract text available
Text: 2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • Unit: mm NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage , 51.6 0.442 −37.1 1000 0.435 −166.8 3.049 79.9 0.096 55.9 0.424 â


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PDF 2SC5086
1996 - a31789

Abstract: No abstract text available
Text: –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , €“177.3 –176.5 –177.1 –175.3 –174.1 –170.9 –166.8 –185.4 –157.7 –147.8 â


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2005 - Not Available

Abstract: No abstract text available
Text: Ordering number:ENN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. unit:mm 2059B 0.15 0.2 0.425 [2SC5226] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 , 0.130 38.6 0.426 –57.1 1200 0.536 –166.8 2.446 70.5 0.137 40.3


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PDF ENN5032A 2SC5226 2059B 2SC5226]
1995 - Not Available

Abstract: No abstract text available
Text: Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , €“176.5 –177.1 –175.3 –174.1 –170.9 –166.8 –185.4 –157.7 –147.8 –138.4 â


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PDF 1000MHz 5963-2451E
c5287

Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 c3852 transistor c3856 npn
Text: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 A1668 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V , 7 C3679 C3680 C4299 C4445 C4300 C4301 3 Transistor Selection Guide Transistors for


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PDF n66to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 c5287 c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 c3852 transistor c3856 npn
2003 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES • High power gain , push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 , Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 LIMITING VALUES In , . UNIT Per transistor section VDS drain-source voltage − 125 VGS gate-source voltage


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PDF M3D091 BLF278 OT262A1 OT262A1 SCA75 613524/04/pp23
Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH , €“127.2 –136.1 –144.4 –152.5 –160.7 –166.8 –171.5 –177.0 177.6 170.4 165.8 162.0


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2005 - Not Available

Abstract: No abstract text available
Text: €“164.9 4.21 75.7 0.131 78.8 0.305 –38.6 1900 0.177 –166.8 4.01 74.3 0.138


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PDF 2SC5812 REJ03G0757-0100 ADE-208-1468) PUSF0003ZA-A
Not Available

Abstract: No abstract text available
Text: ˆ 159.2 0.741 ∠158.8 0.887 ∠165.2 - 43 42 42 dBm Efficiency Tuned: OIP3 0.867 ∠166.8


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PDF TGF2022-24 180-300mA 180mA 600mA) TGF2022-24 DC-20 TGF2022-2uto 0007-inch
nec a1232

Abstract: No abstract text available
Text: TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 à , €“79.7 –92.3 –106.1 –117.6 –127.9 –136.7 –145.0 –153.1 –161.4 –166.8 –171.3 â


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2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’160.4 −166.8 −172.3 −177.0 178.4 174.7 171.1 168.2 165.3 162.6 160.5 158.9 156.9 154.9


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1998 - nec A1394

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , ˆ’78.2 −86.2 −98.2 −112.8 −132.0 −151.7 −166.8 −175.3 176.0 169.8 Data Sheet


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2001 - Transistor a1244

Abstract: A827 1307 A1489 TRANSISTOR A1668
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number , ˆ’151.9 −158.3 −163.3 −166.8 −170.4 17.413 12.280 9.079 7.053 5.769 4.872 4.212 3.699 , ˆ’155.3 −158.5 −161.5 −164.2 −166.8 −169.4 −171.7 1.310 1.213 1.111 1.040 0.973


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PDF 2SC5677 2SC5677-T3 Transistor a1244 A827 1307 A1489 TRANSISTOR A1668
2009 - transistor a2431

Abstract: A2611 8 Pin a2955 a2733 transistor a954 A2611
Text: ˆ’16.15 −15.97 −15.67 −15.96 −16.17 −16.68 −17.66 −19.15 −21.42 −24.24 â , Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters


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PDF ADL5602 OT-89 ADL5602 O-243 09-12-2013-C PKG-003480 OT-89] ADL5602ARKZ-R7 ADL5602-EVALZ transistor a2431 A2611 8 Pin a2955 a2733 transistor a954 A2611
2005 - Not Available

Abstract: No abstract text available
Text: €“38.6 1900 0.177 –166.8 4.01 74.3 0.138 78.7 0.304 –39.7 2000 0.183 â


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2001 - Transistor a1488

Abstract: No abstract text available
Text: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0


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2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , ˆ’146.6 −152.5 −157.9 −162.3 −166.8 −170.3 −173.4 −176.4 −179.4 178.0 175.4 173.3


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c4468 power transistor equivalent

Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 c4131 equivalent transistor B1560 equivalent sla5212 transistor c5287 circuit diagram C4300 transistor pin out 2SC3852
Text: Specifications List by Part Number . 172 2-4 Transistor and MOS FET , 250 230 C3927 C5130 C4138 C4546 C4140 C5071 D2141 D2017 200 A1668 C4382 , MT-200 (fixed at two points) MT-200 (fixed at two points) LAPT (Linear Amplified Power Transistor ): Multi-Emitter Transistor for High-Frequency ■Output Transistors with Temperature Compensating Function


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PDF SLA15Pin) c4468 power transistor equivalent c5287 equivalent transistor c4381 power transistor equivalent SLA5096 c4131 equivalent transistor B1560 equivalent sla5212 transistor c5287 circuit diagram C4300 transistor pin out 2SC3852
fgt313

Abstract: c5287 equivalent transistor B1560 equivalent 2sk2079 FGT412 c4381 SLA4052 c5287 C4381 equivalent c3852a
Text: Specifications List by Part Number . 168 2-4 Transistor and MOS FET Arrays , C4546 C4140 C5071 D2141 D2017 200 A1668 C4382 180 Collector­Emitter Voltage VCEO


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1997 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , €“142.7 –150.7 –158.7 –166.8 –175.0 178.6 172.5 167.9 164.0 160.6 157.8 155.3 MAG


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2008 - 2SC5586 equivalent

Abstract: c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 C3852 c4381
Text: Specifications List by Part Number . 158 2-3 Transistor and MOS FET Arrays , D2560 D2562 A1295 C3264 C4546 C3927 400 380 250 230 C4138 C5071 C4140 200 A1668 C4382 , 2-3 Transistor and MOS FET Arrays Specifications List by Part Number Part Number SDA05 SDC03 SDC04 , (SMA12Pin) SIP12 (SMA12Pin) SIP12 (SMA12Pin) SIP15 (SMA15Pin) 160 Transistors 2-3 Transistor and


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PDF SLA21Pin) 2SC5586 equivalent c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 C3852 c4381
2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz


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