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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

a1273 transistor scheme Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - A1273

Abstract:
Text: µPD16681A Table 2-1. Pad Layout X (µm) Y (µm) PAD No. −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 4800 4680 4560 4440 4320 4200 4080 3960 3840 3720 3600 3480 , 82 83 84 85 86 87 88 89 90 91 92 + −1273 960 + −1273 840 −1273


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PDF PD16681A PD16681A A1273 a1273 y k A-1273 A1273 Y
1999 - A1273

Abstract:
Text: Layout PAD No. Pin Name Y (µm) PAD No. −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 −1273 4800 4680 4560 4440 4320 4200 4080 3960 3840 3720 3600 3480 3360 , DUMMY2 DUMMY3 DUMMY4 DUMMY5 COM27 COM28 COM29 COM30 COM31 COM32 COM33 COM34 −1273 −1273


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PDF PD16681 PD16681 A1273 A-1273 a1273 y k IC A3120
2015 - nickel bh curve

Abstract:
Text: ‰§875 ≧11 388 ~ 422 48 ~ 53 ≧1273 ≧16 358 ~ 397 45 ~ 50 1.24 ~ 1.31 , ½ž 335 ≧33 ≧1114 ≧1273 ≧16 ≧1273 ≧1432 ≧18 238 ~ 278 334 ~ 375 , Maximum energy product HcJ (BH)max (kA/m) (kOe) (kJ/m3) (MGOe) ≧1273 ≧16 â , ½ž971 11.2 ~ 12.2 1.26 ~ 1.34 941 ~1028 11.8 ~ 12.9 1.17 ~ 1.25 891 ~970 11.2 ~ 12.2 ≧1273 , ‰§21 262 ~ 303 294 ~ 343 ≧1671 ≧1989 ≧1273 ≧25 ≧16 254 ~ 303 41 ~ 46


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PDF E50CH E49SH E46EH E45EH E41EH NMX-S52 NMX-50 HG-A27-Eã nickel bh curve
2005 - a1273* transistor

Abstract:
Text: Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Ultrasmall package permitting applied sets to be small and slim. unit:mm 2106A [2SC4931 , €“31.1 400 0.422 –106.3 11.887 108.4 0.048 59.7 0.515 –37.2 600 0.364 –127.3


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PDF ENN5295A 2SC4931 2SC4931] a1273* transistor a1273 transistor A1273
MICRO SWITCH FREEPORT, ILL.USA

Abstract:
Text: .963 (MAX) 0.100 £2.543 - 0.050 £1.273 - O + - OUT + HIH-3610-002 HIH-3610-001 WARRANTY/REMEDY


OCR Scan
PDF HIH-3610 HIH-3610 009006-0-EN MICRO SWITCH FREEPORT, ILL.USA capacitive humidity sensor 3610 circuit humidity sensor A1273 HIH-3610-001 3610 SENSORS humidity sensor HIH-3610-002 "Humidity Sensor"
1995 - a1273* transistor equivalent

Abstract:
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 212 , .08 .17 .09 PHASE DEV (DEG) 0.00 0.0 0.00 0.00 25.93 8.21 2.13 –3.56 –7.98 –12.73


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PDF PPA-18632 18GHz PPA-18632 PP-25 5963-3232E. 5963-2589E a1273* transistor equivalent a1273 transistor A1273 a1273 transistor DATA A4131 hp 3586
1995 - A1273

Abstract:
Text: €“62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 119.5 110.9 102.2 93.5 84.5 75.3 66.0 56.6 47.3 38.3 29.6 21.4 13.6 6.2 1.2 –127.3


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PDF 500MHz 5963-2532E A1273 a1273 transistor
1995 - A3402

Abstract:
Text: €“69.7 –80.7 –90.0 –98.3 –105.4 –113.6 –119.6 –127.3 –146.0 –176.2 120.1 84.1


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PDF PPA-18232 18GHz PPA-18232 PP-25 5963-3232E. 5963-2590E A3402
1996 - a1273* transistor

Abstract:
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE , CONNECTIONS °C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor , including static electricity. Document No , 0.083 S21 ANG –71.3 –82.5 –89.5 –98.6 –110.3 –127.3 –140.2 –176.6 153.2


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PDF
2001 - Not Available

Abstract:
Text: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , ˆ’121.5 −127.3 −132.9 −138.0 −142.8 −147.1 −150.7 −154.2 −157.7 1.012 1.004 , 0.469 −86.5 −127.3 −145.8 −157.0 −163.7 −169.7 −173.9 −177.8 179.4 30.622


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PDF
2010 - A2147

Abstract:
Text: 0.12257 −2.565 11.586 −12.73 0.00168 −119.4 0.36332 −1.800 800 0.12902


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PDF MBD128 BGA2748 MAM455 R77/04/pp11 A2147
Not Available

Abstract:
Text: Efficiency Tuned: OIP3 0.619 ∠127.3 37 1/ Large signal equivalent pHEMT output network 2


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PDF TGF2022-06 45-75mA 150mA) TGF2022-06 DC-20 0007-inch
2010 - J569

Abstract:
Text: €“90.1 1.3 38.1 – j18.7 0.25 –110.5 1.4 33.8 – j14.9 0.26 –127.3 IF Output


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PDF LTC5540 600MHz 900MHz 640mW 20-Lead 600MHz LTC5540 16-Bit, J569 LTC5541 LT5570 LT5579 N40001 LTC5542 LT5578 LT5557 LT5554
2001 - Transistor a1488

Abstract:
Text: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0


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PDF
2002 - Not Available

Abstract:
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0


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PDF
2005 - TRF3761-A

Abstract:
Text: offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz 1MHz offset 6MHz offset VCO , €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181I TRF3761-A TRF3761-B TRF3761-C TRF3761-E TRF3761-F TRF3761-H
2005 - TRF3761-A

Abstract:
Text: offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz 1MHz offset 6MHz offset VCO , €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181I TRF3761-A TRF3761-B TRF3761-C TRF3761-E TRF3761-F TRF3761-H
2001 - transistor A1024

Abstract:
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe , ˆ’118.6 −127.3 26.831 25.435 23.040 20.794 18.447 16.501 14.938 13.596 12.356 166.4 150.5


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PDF 2SC5761 2SC5761-T2 transistor A1024 A1712 nec a1232
2008 - 1010 817 g40

Abstract:
Text: €“23.70 –6.0 –12.0 –30.7 –67.6 –100.1 –127.3 0 –5.4 –10.8 –28.2 –62.6 â


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PDF LTC6601-1 28MHz, 28MHz 100MHz 100dBc 123dBc 10MHz: 72dBc 103dBc 20-Lead 1010 817 g40
1998 - MDM 6600

Abstract:
Text: No file text available


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PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
2005 - TRF3761-A

Abstract:
Text: €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181J 1000ti TRF3761-A TRF3761-B TRF3761-C TRF3761-E TRF3761-F TRF3761-H
2005 - TRF3761-A

Abstract:
Text: €“156.2 10MHz offset –158.4 100kHz offset –127.3 600kHz offset fVCO = 1651MHz, fO = 412.75 MHz


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PDF TRF3761 SLWS181J 1000ti TRF3761-A TRF3761-B TRF3761-C TRF3761-E TRF3761-F TRF3761-H
2005 - TRF3761-A

Abstract:
Text: –149 6MHz offset –156.2 10MHz offset –127.3 600kHz offset fVCO = 1651MHz, fO


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PDF TRF3761 SLWS181J TRF3761-A TRF3761-B TRF3761-C TRF3761-E TRF3761-F TRF3761-H
1995 - transistor A1011

Abstract:
Text: .5-22 5.2.4 Implementing a Power Management Scheme


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PDF 80C186EC/80C188EC 82C59A Index-10 transistor A1011 a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR 80188 Programmers Reference Manual
1995 - A1306 TRANSISTOR

Abstract:
Text: .5-22 5.2.4 Implementing a Power Management Scheme


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PDF 80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1266 A1273 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
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