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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

a105 transistor TOSHIBA Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: 2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High , . the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in , absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba , admittance θrb −105 ° Forward transfer admittance |yfb| 34 mS Phase angle of , €¢ Toshiba Corporation, and its subsidiaries and affiliates (collectively " TOSHIBA "), reserve the right to


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PDF 2SC2714
Not Available

Abstract: No abstract text available
Text: 2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High , . the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in , absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba , mS Phase angle of reverse transfer admittance θrb −105 ° Forward transfer , 120 ( ) 2010-08-24 2SC2714 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its


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PDF 2SC2714
MIG50J901H

Abstract: TCH7247 MIG50J90 jm01
Text:  TOSHIBA INTEGRATED GTR MODULE MIG50J901H High Power Switching Applications Motor Control , 15.311.0 0.110.3. .0.6« 10.3 1111 ii 1 «im »10.5 -I = ? SIGNAL TERMINAL 1 : Gl 2: El 3:G2 4:E2 5:G3 8:E3 JEDEC — EIAJ — TOSHIBA 2-99B1A Weight : 245g Equivalent Circuit roso- to- pi -o , . No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third , patentor patent rights of TOSHIBA or others. These TOSHIBA productsare intended for usage in general


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PDF MIG50J901H 305OA/6OOV 15jis 303OA/8OOV 5A/600V 2-99B1A TjS12S TCH7247 MIG50J901H MIG50J90 jm01
2007 - Not Available

Abstract: No abstract text available
Text: TA79005,06,07,08,09,10,12,15,18,20,24SB TOSHIBA Bipolar Linear Integrated Circuit Silicon , design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook , ˆ’25 V ≤ VIN ≤ −10.5 V ― 47 160 5 mA ≤ IOUT ≤ 1.5 A ― 26 160 250 mA , −25 V ≤ VIN ≤ −10.5 V ― ― 1.0 5 mA ≤ IOUT ≤ 1.0 A ― ― 0.5 −23 V ≤ VIN ≤ −10.5 V, 5 mA ≤ IOUT ≤ 1.0 A mV mV mA Output noise voltage


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PDF TA79005 TA79005SB, TA79006SB, TA79007SB, TA79008SB, TA79009SB, TA79010SB, TA79012SB, TA79015SB, TA79018SB,
2010 - TRANSISTOR a105

Abstract: transistor PNP A105 a105 transistor SMD MARKING A69 transistor NPN/a105 transistor -20/a105 transistor
Text: PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data , ) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN , NXP Semiconductors 20 V, 6.2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute , NXP Semiconductors 20 V, 6.2 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics


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PDF PBSS4021PX SC-62) PBSS4021NX. AEC-Q101 PBSS4021PX TRANSISTOR a105 transistor PNP A105 a105 transistor SMD MARKING A69 transistor NPN/a105 transistor -20/a105 transistor
2010 - A66 smd transistor

Abstract: TRANSISTOR SMD MARKING CODE A66 a105 SMD transistor
Text: PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data , ) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement , NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , 15 PBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low VCEsat (BISS) transistor Table 5 , , 6.6 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal


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PDF PBSS4021PZ OT223 SC-73) PBSS4021NZ. AEC-Q101 PBSS4021PZ A66 smd transistor TRANSISTOR SMD MARKING CODE A66 a105 SMD transistor
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data , ) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement , NXP Semiconductors 60 V, 5.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , 15 PBSS4041PZ NXP Semiconductors 60 V, 5.7 A PNP low VCEsat (BISS) transistor Table 5 , , 5.7 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal


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PDF PBSS4041PZ OT223 SC-73) PBSS4041NZ. AEC-Q101 PBSS4041PZ
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4041PX 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 — 1 April 2010 Product data , ) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN , NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute , NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table


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PDF PBSS4041PX SC-62) PBSS4041NX. AEC-Q101 PBSS4041PX
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product , Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package , 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning , Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage , ) transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System


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PDF PBSS4021SP OT96-1 PBSS4021SN PBSS4021SPN
2010 - SMD marking A63

Abstract: transistor a105 -20/a105 transistor
Text: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Rev. 2 — 11 October 2010 Product , Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package , ‰¤ 0.02. [1] PBSS4021SP NXP Semiconductors 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor , Max Unit Per transistor VCBO collector-base voltage open emitter - −20 V , 15 PBSS4021SP NXP Semiconductors 20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor Table 6


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PDF PBSS4021SP OT96-1 PBSS4021SN PBSS4021SPN SMD marking A63 transistor a105 -20/a105 transistor
AN7283S

Abstract: 40A-3 AN7280S F37A G1103 SFE107MS3
Text: / M^ ' oV_' Search '-OV Concrol Voltage (TFT1 : Matsushita 7E7137A \ VC : Toshiba KV1Î40A-3 ) CF , ) -"j-°vref(5v) Local oscillation transistor emitter pin. 2 OSC Base 0 Local oscillation transistor base , 10 9 8E s 6 5 7 8 9 10 Vcc(V) 130 125 ■120 115 1110 «105 CO O 100 145 5 140 -50-40 -20 0


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PDF AN7283S AN7283S AN7280S 122dB^ 20-Lead 40A-3 AN7280S F37A G1103 SFE107MS3
AN7283S

Abstract: 3FW transistor an7283 G1103 lkt 108 25R8 SFE107MS3 adx 312 F37A AN7280S
Text: / M^ ' oV_' Search '-OV Concrol Voltage (TFT1 : Matsushita 7E7137A \ VC : Toshiba KV1Î40A-3 ) CF , OSC Emitter (5) -"j-°vref(5v) Local oscillation transistor emitter pin. 2 OSC Base 0 Local oscillation transistor base pin. 3 5 17 Vref By-pass Ut E* vcc 2) ® è> Vref by-pass pin for mixer, OSC , tanMu 11 10 9 8E s 6 5 7 8 9 10 Vcc(V) 130 125 ■120 115 1110 «105 CO O 100 145 5 140


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PDF AN7283S AN7283S AN7280S 122dB^ 20-Lead 3FW transistor an7283 G1103 lkt 108 25R8 SFE107MS3 adx 312 F37A AN7280S
2010 - NPN/a105 transistor

Abstract: No abstract text available
Text: PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data , (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table , - - 15 A - 25 35 mΩ TR1; NPN low VCEsat transistor VCEO , Semiconductors 20 V NPN/PNP low VCEsat (BISS) transistor Table 2. Symbol Quick reference data , - −6.3 A - - −15 A - 36 54 mΩ TR2; PNP low VCEsat transistor


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PDF PBSS4021SPN OT96-1 PBSS4021SN PBSS4021SP NPN/a105 transistor
2010 - marking code A09 SMD Transistor

Abstract: No abstract text available
Text: PBSS5440D 40 V PNP low VCEsat (BISS) transistor Rev. 02 — 14 December 2009 Product data , ) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4440D , (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1 , low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 , PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the


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PDF PBSS5440D OT457 SC-74) PBSS4440D. PBSS5440D marking code A09 SMD Transistor
TC551001APL

Abstract: TC551001AF 324GND toshiba lv 104
Text: TOSHIBA TC551001APL/AFL/AFIL/ATRL-70L/85L/10L(LV) SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC , CET A10 SË A-99 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC551001APL/AFL/AFTL/ATRL , A-100 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Static RAM TC551001 APL/AFLyAFTL/ATRL , Capacitance Output Capacitance V IN = GND v 0U t 10 10 pF = gnd TOSHIBA AMERICA ELECTRONIC , Measurement Reference Levels Output Load 2.4V/0.6V 5ns 1.5V 1.5V 1 TTL Gate and CL = 100pF A-102 TOSHIBA


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PDF TC551001APL/AFL/AFIL/ATRL-70L/85L/10L TC551001APL TheTC551001APL 100pF TC551001AF 324GND toshiba lv 104
CD45388

Abstract: CD4538BCN CD4538B CD4538 CD4538BMJ CD4538BM CD4538BC CD4528B 74LS CD4538BMJ/883
Text: ±0.02 ±10-5 ±0.05 ±0.5 jxA 'in Input Current Other Inputs vdd = 15v, v|n = 0v or 15v ±0.1 ±10-5  , ±0.02 ±10-5 ±0.05 ±0.5 jxA 'in Input Current Other Inputs VDd = 15V, V|N = 0V or 15V ±0.3 ±10-5  , comparator C1 and N-Channel transistor N1 ©. At the same time the output latch is set. With transistor N1 on , comparator C1 changes state and transistor N1 turns off. Comparator C1 then turns off while at the same time comparator C2 turns on. With transistor N1 off, the capacitor Cx begins to charge through the timing resistor


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PDF CD4538BM/CD4538BC CD4538B CD45388 CD4538BCN CD4538 CD4538BMJ CD4538BM CD4538BC CD4528B 74LS CD4538BMJ/883
2009 - Not Available

Abstract: No abstract text available
Text: PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product , (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 , (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute , , 5.3 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal


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PDF PBSS303PZ OT223 SC-73) PBSS303NZ. PBSS303PZ
transistor a105 pin configuration

Abstract: No abstract text available
Text: completely with vertical transistor structures and dielectric isolation along with the use of Sipexâ , ratio, and high power supply rejection ratio exceed those of other field effect transistor technology , Full 25‘C 114 110 90 86 1 25 "C Full 25“C Full Full 25‘C 25 "C 25'C ±11 ±10.5 , dB dB 2 MHz ±11 ±10.5 ±5.5 ±5.25 10 ±12 ±11 ±10 ±10 40 100 32 2 V , 82 1 120 116 104 98 25 C Full 25‘C Full Full 25‘C 25‘C 25‘C ±11 ±10.5


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PDF 0PA111/121 OPA111 OPA121 OPA111/121 transistor a105 pin configuration
2002 - Not Available

Abstract: No abstract text available
Text: Inhibit* input can be controlled with an open-collector (or open-drain) discrete transistor (See Figure 1 , bipolar transistor (or MOSFET) is recommended. To ensure the regulator output is disabled, the control , LXZ35VB221M10X12LL FS 10V 20V 330µF 150µF 0.025Ω 0.03Ω ÷2 3500mA 3200mA 10 ×10.5 10 ×10.5 , , SS (Radial) 10V 330µF 0.025Ω >3500mA 10.0 ×10.5 N/R 1 10SS330M SV , ×20 8 ×10.5 8 ×10.5 1 1 N/R 1 2 1 1 2 LXZ35VB331M110X16LL LXV25VB820M12X20LL


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PDF PT6340 SLTS138A
2007 - CHEMI-CON MSL level

Abstract: No abstract text available
Text: open-collector (or open-drain) discrete transistor (See Figure 1). The input is internally pulled-up to the , compatible with TTL devices. An open-collector device, preferably a discrete bipolar transistor (or MOSFET , 330µF 150µF 0.025Ω 0.03Ω ÷2 3500mA 3200mA 10 ×10.5 10 ×10.5 N/R 1 1 2 , 0.025Ω >3500mA 10.0 ×10.5 N/R 1 10SS330M SV (Surface Mount) 10V 20V 330µF , „¦ 0.024Ω 1050mA 1340mA 3080mA 3200mA 10 ×16 12 ×20 8 ×10.5 8 ×10.5 1 1 N/R 1 2


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PDF PT6340 SLTS138A CHEMI-CON MSL level
TA2131

Abstract: TA2131FN Scans-0055075
Text:  TOSHIBA TA2131 FN TOSHIBA BIPOLAR LINEAR IC SILICON MONOLITHIC TA 2131 FN LOW CURRENT , _SSOP24-P-300-0.65A Weight : 0.14 g (Typ.) • TOSHIBA is continually working to improve the quality and reliability , , when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could , ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent


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PDF TA2131 TA2131FN SSOP24-P-300-0 Scans-0055075
OPA111

Abstract: OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
Text: demanding instrumentation applications. Designed completely with vertical transistor structures and , ratio exceed those of other field effect transistor technology amplifiers. Improved performance in , Output Resistance7 Full Power Bandwidth® 25'C Full 25'C Full Full 25'C 25'C ±11 ±10.5 ±5.5  , Output Voltage Swing3 25 C ±11 ±12 ±11 ±12 V Full ±10.5 ±11 ±10.5 ±11 V Output CurrentÂ


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PDF OPA111/121 OPA111AIH OPA111AMH OPA111AMH/883 OPA111BIH OPA121ACH OPA121BCP OPA111 OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
toshiba labeling example

Abstract: TA2131 TA2131FL toshiba headphone amplifier
Text:  TOSHIBA TA2131 FL TOSHIBA BIPOLAR LINEAR IC SILICON MONOLITHIC T A 2131FL LOW CURRENT , • TOSHIBA is continually working to improve the quality and reliability of its products , TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA


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PDF TA2131 2131FL TA2131FL QON24-P-0505-0 toshiba labeling example toshiba headphone amplifier
2014 - Not Available

Abstract: No abstract text available
Text: open-collector (or open-drain) discrete transistor (See Figure 1). The input is internally pulled-up to the , compatible with TTL devices. An open-collector device, preferably a discrete bipolar transistor (or MOSFET , 330µF 150µF 0.025Ω 0.03Ω ÷2 3500mA 3200mA 10 ×10.5 10 ×10.5 N/R 1 1 2 , 0.025Ω >3500mA 10.0 ×10.5 N/R 1 10SS330M SV (Surface Mount) 10V 20V 330µF , „¦ 0.024Ω 1050mA 1340mA 3080mA 3200mA 10 ×16 12 ×20 8 ×10.5 8 ×10.5 1 1 N/R 1 2


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PDF PT6340 SLTS138A
TCXO KSS 12,8 mhz

Abstract: KSS tcxo 12.8MHz TCXO KSS 1bw12 TA31183BFN
Text:  TOSHIBA TA31183BFN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 31183BFN , 2002-03-29 TOSHIBA TA31183BFN PIN DESCRIPTION (constants in equivalent circuits show standard design , €” i - T \ y. 7 /n < \ a. / o CO a CM fNl 2 2002-03-29 TOSHIBA TA31183BFN PIN No. PIN NAME , , : aL Of o fNl 7 m / r 77 3 2002-03-29 TOSHIBA TA31183BFN PIN No. PIN NAME FUNCTION INTERNAL , _ : o r 4 2002-03-29 TOSHIBA TA31183BFN CIRCUIT DESCRIPTION 1. Setting the Clock Frequency This


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PDF TA31183BFN 31183BFN 20-pin TCXO KSS 12,8 mhz KSS tcxo 12.8MHz TCXO KSS 1bw12 TA31183BFN
Supplyframe Tracking Pixel