The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

Zener diode 224 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - STP6NK50Z

Abstract: D6NK50Z P6NK50Z
Text: GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown , Drain Current (continuous) at TC = 100°C 3.5 3.5 (*) A Drain Current (pulsed) 22.4 22.4 (*) A 90 25 W 0.2 W/°C IDM ( ) PTOT 5.6 Total Dissipation at TC = 25 , Temperature V 4.5 Peak Diode Recovery voltage slope VISO A V/ns - 2500 -55 to 150 , GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance


Original
PDF STP6NK50Z STF6NK50Z STD6NK50Z O-220/TO-220FP/DPAK STP6NK50Z O-220 O-220FP D6NK50Z P6NK50Z
2004 - STP6NK50Z

Abstract: D6NK50Z P6NK50Z STF6NK50Z STD6NK50Z STD6NK50ZT4 P6NK50
Text: = 25 °C, ID = IAR, VDD = 50 V) 180 mJ GATE-SOURCE ZENER DIODE Symbol Parameter Test , Current (continuous) at TC = 100°C 3.5 3.5 (*) A Drain Current (pulsed) 22.4 22.4 , 4.5 Peak Diode Recovery voltage slope VISO A V/ns - 2500 -55 to 150 V °C , . Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes , respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to


Original
PDF STP6NK50Z STF6NK50Z STD6NK50Z O-220/TO-220FP/DPAK STP6NK50Z O-220 O-220FP D6NK50Z P6NK50Z STF6NK50Z STD6NK50Z STD6NK50ZT4 P6NK50
2004 - P6NK50Z

Abstract: P6NK50 D6NK50 D6NK STF6NK50Z STP6NK50Z
Text: (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 220 Unit A mJ GATE-SOURCE ZENER DIODE Symbol , ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5.6 3.5 22.4 90 0.72 500 500 ± 30 5.6 (*) 3.5 (*) 22.4 (*) 25 , . Unit V (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device


Original
PDF STP6NK50Z STF6NK60Z STD6NK50Z O-220/TO-220FP/DPAK STF6NK50Z O-220 O-220FP P6NK50Z P6NK50 D6NK50 D6NK
2003 - D6NK

Abstract: P6NK50Z STP6NK50Z D6NK50 P6NK50 STD6NK50ZT4 STF6NK60Z STD6NK50Z STF6NK50Z F6NK50Z
Text: Tj max) mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage , IDM ( ) PTOT Derating Factor VESD(G-S) dv/dt (1) 5.6 (*) A 3.5 3.5 (*) A 22.4 Total Dissipation at TC = 25°C 5.6 22.4 (*) A 25 W 0.2 W/°C 0.72 Gate source ESD(HBM-C=100pF, R=1.5K) 3000 4.5 Peak Diode Recovery voltage slope VISO Insulation , minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener


Original
PDF STP6NK50Z STF6NK60Z STD6NK50Z O-220 O-220FP STP6NK50Z STF6NK50Z O-220 O-220FP D6NK P6NK50Z D6NK50 P6NK50 STD6NK50ZT4 STF6NK60Z STD6NK50Z STF6NK50Z F6NK50Z
1999 - NEC C 324 C

Abstract: marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD12ES zener rd9.1esb2 RD39ES
Text: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE (DO-34) DESCRIPTION , .) with DHD (Double Heatsink Diode ) construction having allowable power dissipation of 400 mW. PACKAGE DIMENSIONS (in millimeters) 0.4 25 MIN. FEATURES · DO-34 Glass sealed package This diode can be , . 25 MIN. · Planar process · DHD (Double Heatsink Diode ) construction · VZ Applied E24 standard , .1ES RD10ES 2 Zener Voltage VZ (V)Note 1 Suffix AB AB1 AB2 AB AB1 AB2 AB AB1 AB2 AB AB1


Original
PDF RD39ES DO-34) RD39ES DO-34 DO-34 NEC C 324 C marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD12ES zener rd9.1esb2
2007 - 1.4V zener diode

Abstract: bosch zener diode ZR1435 ZH2850
Text: Automotive Electronics Press fit Diodes for Automotive Alternators Zener Diodes Type ZH2 (14V) ZH6 (14V) ZH8 (28V) ZH2850 (28V) (1) IFAV (A) Forward Current Diode Housing , ) Barrier layer temperature IZM (A) Max. Zener Peak Current VZ (V) 5mA Zener Operating , Resistance tj (°C) Barrier layer temperature VZ (V) 5mA Zener Operating Voltage (2) Polarity C+/A(3) Classified in 1V steps Zener Diodes – Second Generation Type ZR1435 (14V


Original
PDF ZH2850 16/28V* 1.4V zener diode bosch zener diode ZR1435 ZH2850
1998 - Not Available

Abstract: No abstract text available
Text: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features , · Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO , Electrical Characteristics at Ta = 25˚C Zener Characteristics Type No. Zener Voltage, Vz [V] ( t = , 2.12 2.00 2.24 15 25 40 200 0.5 GZB2.2 2.08 2.33 2.20 2.45 12 , .1349-1/3 GZB2.0 to 36 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Zener


Original
PDF EN1349C DO-41
Not Available

Abstract: No abstract text available
Text: SDZ6V2CG ZENER DIODE Small Signal Zener Diode Features and Benefits     Silicon planar power zener diode Small power mold Type High reliability and very high stability , SDZ6V2CG Electrical Characteristics (Tamb=25 , Unless otherwise specified) Zener Voltage VZ [V , 20 10 13.0 SDZ20VCG 20.0 20.820 22.4 20 10 15.0 SDZ22VCG 22.0 , 27.0 The Zener voltage (VZ) is measured 40ms after power is supplied. Rev. dat e: 13


Original
PDF OD-123 13-JUN-11 KSD-D6B038-000
6v2 zener diode

Abstract: "Marking Code 183" Zener diode green "Marking Code 183" Zener diode SDZ6V8 6V2 zener diode marking code 77 Zener diode 183 Zener diode Marking Code 183 zener diode marking code 57
Text: SDZ6V2CG ZENER DIODE Small Signal Zener Diode Features and Benefits Silicon planar power zener diode Small power mold Type High reliability and very high stability "Green" device and , (Tamb=25, Unless otherwise specified) Zener Voltage VZ [V] Reverse Current IR [uA] Type No. Min , 20.0 20.820 22.4 20 10 15.0 SDZ22VCG 22.0 23.850 24.5 10 10 17.0 , 10 10 25.0 SDZ36VCG 36.0 39.240 40.0 10 10 27.0 The Zener voltage (VZ


Original
PDF OD-123 13-JUN-11 KSD-D6B038-000 6v2 zener diode "Marking Code 183" Zener diode green "Marking Code 183" Zener diode SDZ6V8 6V2 zener diode marking code 77 Zener diode 183 Zener diode Marking Code 183 zener diode marking code 57
2003 - marking v6 78 diode

Abstract: marking code V6 95 DIODE marking code V6 DIODE MARKING V18 SOD123 DZ23C10 vishay V6 marking code diode v6 zener diode Marking code v3 single zener diode marking V14 zener diode v6 77
Text: VISHAY DZ23 Series Vishay Semiconductors Dual Common-Cathode Zener Diodes Features · This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type designation BZX84C, and the single diode SOD-123 case with the type designation BZT52C. · Dual Silicon Planar Zener Diodes, Common Cathode · The Zener voltages are graded according to the international E 24 standard. Standard Zener


Original
PDF OT-23 BZX84C, OD-123 BZT52C. D-74025 15-Jul-03 marking v6 78 diode marking code V6 95 DIODE marking code V6 DIODE MARKING V18 SOD123 DZ23C10 vishay V6 marking code diode v6 zener diode Marking code v3 single zener diode marking V14 zener diode v6 77
1998 - GZB10

Abstract: GZB11 GZB12 GZB13 GZB15 GZB16 GZB18
Text: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features , Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO , Characteristics at Ta = 25°C Zener Characteristics Type No. Zener Voltage, Vz [V] ( t = 30 ms ) B C , 2.24 15 25 40 200 0.5 GZB2.2 2.08 2.33 2.20 2.45 12 20 40 200 , .0 to 36 Continued from preceding page. Electrical Characteristics at Ta = 25°C Zener


Original
PDF EN1349C DO-41 GZB10 GZB11 GZB12 GZB13 GZB15 GZB16 GZB18
2002 - P4NM60

Abstract: d3nm60 MOROCCO P4NM60
Text: Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the , (continuous) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode , occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an


Original
PDF O-220/DPAK/IPAK STP4NM60 STD3NM60 STD3NM60-1 O-220 P4NM60 d3nm60 MOROCCO P4NM60
2002 - P4NM60

Abstract: MOROCCO P4NM60 D3NM60 STD3NM60 STD3NM60-1 STD3NM60T4 STP4NM60 D3nm6
Text: GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the , /°C Derating Factor dv/dt (1) Tj Tstg 0.55 Peak Diode Recovery voltage slope 15 -65 to , occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an


Original
PDF STP4NM60 STD3NM60 STD3NM60-1 O-220/DPAK/IPAK STD3NM60 O-220 P4NM60 MOROCCO P4NM60 D3NM60 STD3NM60-1 STD3NM60T4 STP4NM60 D3nm6
2003 - MARKING V18 SOD123

Abstract: V18 marking MARKING V20 SOD123 marking code V6 95 DIODE
Text: VISHAY DZ23 Series Vishay Semiconductors Dual Common-Cathode Zener Diodes Features · This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type designation BZX84C, and the single diode SOD-123 case with the type designation BZT52C. · Dual Silicon Planar Zener Diodes, Common Cathode · The Zener voltages are graded according to the international E 24 standard. Standard Zener


Original
PDF OT-23 BZX84C, OD-123 BZT52C. D-74025 10-Jul-03 MARKING V18 SOD123 V18 marking MARKING V20 SOD123 marking code V6 95 DIODE
2001 - BC 2388

Abstract: MM3Z5526 MM3Z5525 MM3Z5524 MM3Z5523 MM3Z5522 MM3Z5521 MM3Z5520 MM3Z5519 MM3Z5518
Text: GRAPHS IZ (mA) IZT REVERSE CHARACTERISTIC IZM ZENER DIODE CHARACTERISTICS AND SYMBOL , MM3Z5518 thru MM3Z5546 SCOTTSDALE DIVISION LOW VOLTAGE AVALANCHE DIODE PRODUCT PREVIEW · · · · SOD323 PACKAGE LOW ZENER NOISE SPECIFIED LOW ZENER IMPEDANCE LOW LEAKAGE CURRENT , specified MAX. REVERSE LEAKAGE MAX ZENER CURRENT IMPEDANCE B-C D SUFFIX VR - VOLTS ZZT @ I ZT IR , NOMINAL ZENER VOLTAGE VZ @ I Z T VOLTS (NOTE 2) TEST CURRENT IZT mAdc MM3Z5518 3.3 20


Original
PDF MM3Z5518 MM3Z5546 OD323 200mW BC 2388 MM3Z5526 MM3Z5525 MM3Z5524 MM3Z5523 MM3Z5522 MM3Z5521 MM3Z5520 MM3Z5519
2001 - IEC 60060-1

Abstract: 600601 TOPSWITCH BZD142W BZD142W-68 M3D121 08603 MAM433
Text: Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode BZD142W , Philips Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode , ; zener with integrated blocking diode BZD142W GRAPHICAL DATA MBL106 3.0 MBL107 102 , Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode BZD142W , Philips Semiconductors Product specification ZenBlockTM; zener with integrated blocking diode


Original
PDF M3D121 BZD142W MAM433 SCA73 613510/02/pp8 IEC 60060-1 600601 TOPSWITCH BZD142W BZD142W-68 M3D121 08603 MAM433
2005 - dz23c16-v

Abstract: DZ23C4V3-V BZX84C-V marking v6 zener diode VISHAY marking v25 DZ23B43-V DZ23C18-V BZT52C-V marking V4 diode SOD 323 DZ23B2V7-V
Text: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features · This diode is also available in other case styles and configurations including: the dual diode common cathode configuration e3 with type designation AZ23, the single diode SOT-23 case with the type designation BZX84C-V, and the single diode SOD-123 case with the type designation BZT52C-V. · Dual Silicon Planar Zener Diodes, Common Cathode · The Zener voltages are graded according to the international E 24 standard


Original
PDF DZ23-V-Series OT-23 BZX84C-V, OD-123 BZT52C-V. D-74025 10-Mar-05 dz23c16-v DZ23C4V3-V BZX84C-V marking v6 zener diode VISHAY marking v25 DZ23B43-V DZ23C18-V BZT52C-V marking V4 diode SOD 323 DZ23B2V7-V
2004 - marking v6 zener diode

Abstract: MARKING V18 SOD123 BZX84C DZ23C2V7 DZ23C3V0 V6 marking code diode DZ23C3V6 DZ23C3V9 DZ23C4V3 marking code ZENER
Text: DZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features · This diode is also available in other case styles and configurations including: the dual diode common cathode configuration with type designation AZ23, the single diode SOT-23 case with the type designation BZX84C, and the single diode SOD-123 case with the type designation BZT52C. · Dual Silicon Planar Zener Diodes, Common Cathode · The Zener voltages are graded according to the international E 24 standard


Original
PDF DZ23-Series OT-23 BZX84C, OD-123 BZT52C. D-74025 08-Jul-04 marking v6 zener diode MARKING V18 SOD123 BZX84C DZ23C2V7 DZ23C3V0 V6 marking code diode DZ23C3V6 DZ23C3V9 DZ23C4V3 marking code ZENER
2011 - T4-LDS-0037

Abstract: zener diode, zl 33 diode zener ZL 27 1N5518BUR1 JANTX 1n5518bur-1 zener diode, zl 22 ZENER DIODE 437
Text: FIGURE 3 ­ Capacitance vs. Zener Voltage (typical) FIGURE 4 Zener Diode Characteristics and Symbol , 1N5518BUR-1 thru 1N5546BUR-1 Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices feature an internal metallurgical bond. This type of bonded Zener package construction is also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener


Original
PDF 1N5518BUR-1 1N5546BUR-1 MIL-PRF-19500/437 1N5546BUR-1 T4-LDS-0037, T4-LDS-0037 zener diode, zl 33 diode zener ZL 27 1N5518BUR1 JANTX zener diode, zl 22 ZENER DIODE 437
2011 - diode zener ZL 27

Abstract: diode zener ZL 15 zener diode, zl 33 diode zener ZL 8 1N5522B1 JANTXV diode zener ZL 30 diode zener ZL 10
Text: FIGURE 3 Capacitance vs. Zener Voltage (typical) FIGURE 4 Zener Diode Characteristics and Symbol , 1N5518B-1 thru 1N5546B-1 Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518-1 thru 1N5546-1 series of 0.5 watt axial-leaded glass Zener Voltage , -35 Zeners also feature an internal metallurgical bond. This type of bonded Zener package construction is , Zener products to meet higher and lower power applications. Important: For the latest information


Original
PDF 1N5518B-1 1N5546B-1 DO-35 MIL-PRF-19500/437 1N5518-1 1N5546-1 DO-35 T4-LDS-0037-1, diode zener ZL 27 diode zener ZL 15 zener diode, zl 33 diode zener ZL 8 1N5522B1 JANTXV diode zener ZL 30 diode zener ZL 10
2011 - Not Available

Abstract: No abstract text available
Text: where diode is to be operated with the banded end positive with respect to the opposite end for Zener , Voltage (Typical) T4-LDS-0037, Rev 2 (111456) FIGURE 4 Zener Diode Characteristics and Symbol , and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices are available with an internal metallurgical bond option. This type of bonded Zener package


Original
PDF 1N5518BUR-1 1N5546BUR-1 MIL-PRF-19500/437 1N5546BUR-1 T4-LDS-0037,
2007 - melf ZENER diode COLOR BAND

Abstract: BZT55B BZT55B2V0 BZT55B2V2 BZT55B2V4 BZT55B2V7 BZT55B3V0 BZT55B3V3 BZT55B3V6
Text: BZT55B SERIES Pb RoHS COMPLIANCE 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features Zener voltage range 2.0 to 75 volts Mini-MELF package Surface , which the serviceability of the diode may be impaired Version: B07 600 500 400 300 200 100 , 50 200 CD - Diode Capacitance (pF) Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = , Working Voltage under Operating Conditions at Tamb=25°C 15 20 25 Figure 5. Diode Capacitance


Original
PDF BZT55B BZT55B51 BZT55B56 BZT55B62 BZT55B68 BZT55B75 100mA 60-cycle melf ZENER diode COLOR BAND BZT55B2V0 BZT55B2V2 BZT55B2V4 BZT55B2V7 BZT55B3V0 BZT55B3V3 BZT55B3V6
2007 - melf ZENER diode COLOR BAND

Abstract: BZT55B3V6 MELF ZENER DIODE color bands blue BZT55B3V3 BZT55B3V0 BZT55B2V7 BZT55B2V4 BZT55B2V2 BZT55B2V0 BZT55B15
Text: BZT55B SERIES Pb RoHS COMPLIANCE 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI MELF Features Zener voltage range 2.0 to 75 volts Mini-MELF package Surface , which the serviceability of the diode may be impaired Version: C08 600 500 400 300 200 100 , 50 200 CD - Diode Capacitance (pF) Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = , Working Voltage under Operating Conditions at Tamb=25°C 15 20 25 Figure 5. Diode Capacitance


Original
PDF BZT55B BZT55B51 BZT55B56 BZT55B62 BZT55B68 BZT55B75 100mA 60-cycle melf ZENER diode COLOR BAND BZT55B3V6 MELF ZENER DIODE color bands blue BZT55B3V3 BZT55B3V0 BZT55B2V7 BZT55B2V4 BZT55B2V2 BZT55B2V0 BZT55B15
2011 - zener diode, zl 33

Abstract: No abstract text available
Text: Z FIGURE 3 ­ Capacitance vs. Zener Voltage (Typical) FIGURE 4 Zener Diode Characteristics and , 1N5518BUR-1 thru 1N5546BUR-1 Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage , devices are available with an internal metallurgical bond option. This type of bonded Zener package , Zener products to meet higher and lower power applications. Available on commercial versions


Original
PDF 1N5518BUR-1 1N5546BUR-1 MIL-PRF-19500/437 1N5546BUR-1 T4-LDS-0037, zener diode, zl 33
2007 - BZV55B2V2

Abstract: BZV55B BZV55B2V0 BZV55B2V4 BZV55B2V7 BZV55B3V0 BZV55B3V3
Text: BZV55B SERIES Pb RoHS COMPLIANCE 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators MINI-MELF Features Zener voltage range 2.0 to 75 volts LL-34(Mini-MELF) package Surface , which the serviceability of the diode may be impaired Version: B07 600 500 400 300 200 100 , 0 50 200 CD - Diode Capacitance (pF) Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V , Change of Working Voltage under Operating Conditions at Tamb=25°C 15 20 25 Figure 5. Diode


Original
PDF BZV55B LL-34 BZV55B51 BZV55B56 BZV55B62 BZV55B68 BZV55B75 100mA 60-cycle BZV55B2V2 BZV55B2V0 BZV55B2V4 BZV55B2V7 BZV55B3V0 BZV55B3V3
Supplyframe Tracking Pixel