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LT1114AMJ Linear Technology IC QUAD OP-AMP, 120 uV OFFSET-MAX, 0.75 MHz BAND WIDTH, CDIP14, 0.300 INCH, CERDIP-14, Operational Amplifier
LT1112AMJ8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, 0.75 MHz BAND WIDTH, CDIP8, 0.300 INCH, CERDIP-8, Operational Amplifier
LT1128AMJ8 Linear Technology IC OP-AMP, 120 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1078CS8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1211MN8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1028AMH Linear Technology IC OP-AMP, 120 uV OFFSET-MAX, 75 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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ZW-04-11-G-S-580-120 Samtec Inc Newark element14 100 $1.18 $0.53
ZW-04-11-G-S-580-120 Samtec Inc Sager 238 $0.42 $0.25
ZW-04-11-G-S-580-120 Samtec Inc Samtec 247 $0.38 $0.21

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ZW-04-11-G-S-580-120 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BZW342

Abstract: 04P5V8B 04P31 LTA 702 d413b bzw04P
Text: Z W 4 -1 0 BZW 34P11 BZW 04-11 B ZW 34P 13 BZW D4-13 B ZW 04P14 B ZW 04-14 B ZW 34P15 B ZW 04-15 B


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PDF BZW04P5V8 BZW04-376 BZW04P5V8 BZW342 04P5V8B 04P31 LTA 702 d413b bzw04P
iec 60286-2

Abstract: 0411 BV 302 Draloric Lead Configuration 0106 z303 GS 206 ZL 301
Text: (available for G 20. and Z 30. Series) HOW TO ORDER AVAILABLE FOR MODEL 01.06 GS 206 BV. 01.06 GS 207 BV. 01.06 ZS 301 BV. 01.06 ZDS 0411 BV. 01.06 ZS 302 BV , GS 204 BV. ZDA 0411 Form 05 01.06 Z 301 Form 04 GS 202 BV. G 207 Form , ZDA 0411 Z 302 ZDL 0411 Version "L" ZL 302 Z 303 Z 305 ZL 305 Z 306 ZL 306 Z 307 Version "L" ZL 303 ZL 307 RADIAL TAPING (only available for model ZDV 0411 ) HOW TO


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PDF 27-Aug-02 iec 60286-2 0411 BV 302 Draloric Lead Configuration 0106 z303 GS 206 ZL 301
Not Available

Abstract: No abstract text available
Text: F-212 HW­14­08­ G­S ­400­100 (2,54mm) .100" DW, EW, ZW, HW SERIES DW­12­12­L­Q­400 ZW­06­10­G­T­450­230 FLEXIBLE .025" SQ BOARD STACKERS Mates with: SSW, SSQ, ESW, ESQ, CES, SLW, BSW, BCS, SSM, IDSS, IDSD, HLE, PHF, SMSD, SMSS TYPE STRIP NO. PINS PER ROW LEAD STYLE PLATING OPTION ROW OPTION STACKER HEIGHT OTHER OPTIONS SPECIFICATIONS For complete specifications see www.samtec.com?DW, www.samtec.com?EW or www.samtec.com?ZW ­S DW = (2,79mm) .110" Tail Specify LEAD STYLE from chart LEAD STYLE


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PDF F-212
Not Available

Abstract: No abstract text available
Text: b o o k . 1997 04-11 1/9 - TOSHIBA MP6403 T H E R M A L CHARACTERISTICS SYMBOL MAX , notice . 1997 04-11 2/9 - TOSHIBA MP6403 ELECTRICAL CHARACTERISTICS (Ta = 25°C ) (Nch M O S , €” — — — 1997 04-11 3/9 - TOSHIBA MP6403 ELECTRICAL CHARACTERISTICS (Ta = 25 , VDS - -!° V , v GS = 0> f = 1MHz Output Capacitance Coss 0 ID = -2 .5 A Rise Time tr —10V â , Diode Forward Voltage V d SF I d R = - 5a » v GS = ° Reverse Recovery Time trr lD R = -5 A , V g s


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PDF MP6403 170mil 100/j
Not Available

Abstract: No abstract text available
Text: F-211-1 HW­14­08­ G­S ­400­100 (2,54mm) .100" DW, EW, ZW, HW SERIES DW­12­12­L­Q­400 ZW­06­10­G­T­450­230 FLEXIBLE .025" SQ BOARD STACKERS Mates with: SSW, SSQ, ESW, ESQ, CES, SLW, BSW, BCS, SSM, IDSS, IDSD, HLE, CLH, PHF TYPE STRIP NO. PINS PER ROW LEAD STYLE PLATING OPTION ROW OPTION STACKER HEIGHT OTHER OPTIONS SPECIFICATIONS For complete specifications see www.samtec.com?DW, www.samtec.com?EW or www.samtec.com?ZW ­S DW = (2,79mm) .110" Tail Specify LEAD STYLE from chart LEAD STYLE


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PDF F-211-1
pj 9d9

Abstract: SQB7 jdda lddb bd-aj
Text: ~.-NFIDhSU GS Eq eed }.-~.-NEFhVU 5Gh _o1B GD{S U.+s|- }.-~.-NHAFD{SVU=z}or +s,w,-o|qsN_o1B JDDA> W/s|- E , .-}|, Srx.,-opzs E -} EDD=DBE -} EDDBD>7 o- a`CaXX q}|-+}z Wyo*z |-,}-, gs , w{,s*.oy ps,/ss{ dc o{r d , |BEDD@DDD -w{s,=FIDhSU GS +s,w,-w/s z}or> _sqvo|wqoz N _w|BFD@DDD@DDD -w{s, Wzsq-+wqoz N _w|BIDD@DDD -w{s , | }+rs+w|u w|t}+{o-w}| oqq}+rw|u -} 2}.+ o~~zwqo-w}|B Tdszo2 }.-~.- +o-sr FIDhSU GS w, w|rwqo-sr o, 9d9 , .,srB 4 gs {+|* p*sox oyo*zFgXWG fvw, t.|q-w}| qo.,s, -vs ,.p }.-~.- -} -.+| }| 0vs| -vs ,s|,}+


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PDF
Not Available

Abstract: No abstract text available
Text: Handbook. 1997- 04-11 1/9 T O S H IB A MP6801 ELECTRICAL CHARACTERISTICS (Ta = 25°C) (N-ch , N IT G ate Leakage C urrent !G S S V GS = ± 16 V , V d S = 0 — — ±10 /j A , to change w ith o u t notice. 1997- 04-11 2/9 T O S H IB A MP6801 ELECTRICAL , IN . T Y P . M A X . U N IT G ate Leakage C urrent !G S S V GS = ± 16 V , V d S = 0 â , N ) Id = -5A, V g Drain-Source O N Resistance R D S (O N ) ID = -5A , V GS = -1 0V In


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PDF MP6801 12Pin) 10//A
MP6801

Abstract: No abstract text available
Text: and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997 04-11 1/9 - , io a , v Gs = io v - - - VDD = 48V 30 20 10 nC SOURCE-DRAIN DIODE RATING AND , others. # Tne information contained herein is subject to change without notice. 1997 04-11 2/9 - , .9 110 0.18 MAX. UNTT -3 0 A -1 .7 V ns 1n XV - - uC 1997 04-11 3/9 - TOSHIBA , ) 1997 04-11 5/9 - TOSHIBA DRAIN -&0 URCE ON RESISTANCE Rd s (ON) DRAIN CURRENT Iu (A


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PDF MP6801 P6801 12Pin) MP6801
Not Available

Abstract: No abstract text available
Text: SK 60 DTA FBGJ FBBJK F GS DE GS DE GS DE O DW ;ZW> O CWEE ;CTWE> O M< SEMITOP® 3 3-phase bridge rectifier+ series thyristor IG N PEQ$X M0+Y 7%(+ MIOF -.0Y CPEQX I- N UW ;PE> Q$ ',2 *8A2.-*%2 M[OF -.0Y CPEQX I- N UW ;PE> Q$ ',2 +.%+, MIGJ¥M[GJ


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aeg e81

Abstract: ABE 710 t 558 f bl P81 abe 915 dz801 55b1 AABE c5453 u1-7-31
Text: [ o5?/8-591> |45? 0-@-?411 @ 5? 2;> @41 /A?@;91>?I >121>1:/1^ l88 @41 ?<1/525/-@5;:? ->1 ?A.61/@ @


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PDF 3B293 5A931: q-58A 81B18 C18010 5/-88E sA9505 aeg e81 ABE 710 t 558 f bl P81 abe 915 dz801 55b1 AABE c5453 u1-7-31
Not Available

Abstract: No abstract text available
Text: CORPORATION or others. Tne inform ation contained herein is subject to change w itho ut notice. 1997 04-11 , - Drain Cut-off Current 100 juA I d SS v Ds = i 2ov , v Gs = o Drain-Source Breakdown V 120 - - V , (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge 1997 04-11 2/6 - TOSHIBA , - - - 1997 04-11 3/6 - TOSHIBA MP4403 id - vds id - vos 0.4 0.8 1.2 , s (V) CASE TEMPERATURE Tc CC) 1997 04-11 4/6 - TOSHIBA MP4403 Vth - Tc DYNAMIC


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PDF MP4403
Not Available

Abstract: No abstract text available
Text: - VRRM VRMS VDC DB 101 GS DB 102 GS DB 103 GS 50 100 200 400 600 800 1000 35 70 140 280 50 100 200 400 600 400 1000 DB 104 GS DB 105 GS DB 106 GS DB 107 GS 420 560 700 UNITS Volts Volts Volts I (AV) 1.0 Amps IFSM 30 Amps


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PDF DB101GS DB107GS MIL-STD-202, E181321
Not Available

Abstract: No abstract text available
Text: . 1997 04-11 - 1/4 TOSHIBA MP4020 THERMAL CHARACTERISTICS CHARACTERISTIC TVi d> * m , others. # Tne information contained herein is subject to change without notice. 1997 04-11 - 2/4 , > Z, Ë> 8Ê J o o 8w W O gs C1 -3 - 0 .5 0.3 T a - - -5 5 ° ( 25100 S ' ÊI "M l> ES , ) 5 10 COLLECTOR C U R R E N T CO LLECTOR C U R R E N T 1997 04-11 - 3/4 TOSHIBA , Pt 04-11 - 4/4


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PDF MP4020 CollMP4020
2010 - R1SG

Abstract: No abstract text available
Text: ? ) & ) ) , M : , M : K+ ; Y> S [ @ < GS 9PQ 1 "R>S *. , _, : *U/EW * * * < GS 9PQ 1 "R>S *./ 1 " *S *U/ 1 *./ 1 $ ' 6 "* *./ CDE S 1 , : M , M , : K+ ; S [ < GS 9PQ 1 "R>S *./ 1 " *S *U/ 1 * >^\C S " @ , _, : *U/EW * * * < GS 9PQ 1 "R>S *./ 1 " *S *U/ 1 *./ 1 $ ' 6 "* *./ CDE S 1 , " < GS 1 , ] : ?* 6 HIJ ? ? ? : G : :; , = ? , ]: ?_ ? - -


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ECG1058

Abstract: ECG105
Text: dB ABSOLUTE MAXIMUM RATIN GS (Ta = 2 5 °Q Item Operating Ambient Temperature Range Storage


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PDF T-74-05-01 ECG1058 PowS315ö 0G03flbt EC01058 ECG1058 ECG105
2010 - Not Available

Abstract: No abstract text available
Text: ) LU43 0 [ 2F 9 , Sg + [ < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 )U. d " )S )- 0 1 ) )-.5De 0 , & @ G 1S" ) )-. 0 & 6 "S# < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 )-. 0 1 G , " )S )- 0 1 ) )-.5De 0 )-./ %C-. f , B> 2 : S < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 2- 0 " , < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 )-. 0 1 & 6 XU ) ) ) 0 G * L + G & V , #S " (y " v K !" !" ' 2 M] + L BS 0 " < GS 0 + ] : ?) 6 HIJ ?


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PDF
2010 - 2M78

Abstract: 02F9
Text: . 0 ` " ) LU43 0 # [ 2F 9 , Sg + Y> < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 )U. d " )S )- 0 , ) LU4bb 0 # [ & & @ G V ") !S ) )-. 0 G_+ : )U.EW ) ) ) < GS 9PQ 0 "R>S , Y> < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 ! 6 6 S S S Y Y Y ^ S S # S Y Y , _+ : )U.EW ) ) ) < GS 9PQ 0 "R>S )-. 0 " )S )U. 0 )-. 0 1 & 6 ") )-. CDE S 0 G , !" ' 2 M] + L BS 0 " < GS 0 + ] : ?) 6 HIJ ? ? ? : G : :; + =


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M05-fET

Abstract: mp44 pzlz
Text: tio n co n ta in e d h e re in is su b je ct to ch a n g e w ith o u t notice. 1997 04-11 1/6 - , Current I d SS v Ds = i 2ov , v Gs = o Drain-Source Breakdown 120 - V (BR) DSS ID = 10mA, V g s = 0 , /J.A 100 juA V - 2,0 V - s 0.74 n 0.45 - pF - pF - pF - - - - - - - nC ns 1997 04-11 2/6 , 1997 04-11 3/6 - TOSHIBA DEIN-SOURCE VOLTAGE V o s W DRAIN CURRENT Iu (A) DRAIN CURRENT , VßS (V) DRAIN-SOURCE VOLTAGE VßS (V) 1997 04-11 5/6 - TOSHIBA MP4401 H O £ < E h h 53


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PDF MP4401 M05-fET mp44 pzlz
Not Available

Abstract: No abstract text available
Text: {R]\Uz MO\UaO\{aWz = gS ]\U\O[z /+/{1-0z @]`SO H79>DB;H;F}EIAG;wF7H;x B;H;F pFM?IJ?;J J;C?J 3 E7C;A , = gS ]\UUW{R]z -+~{0,-z @]`SO G?=C7A 9DCJ;FH;F p 9DICH;F H;A31+{,+{/*~{+0,~ } <7L31+{,+{,+2{~0+1 p


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PDF 911fff0Pdc^ 97HDF
2011 - 1 928 405 766

Abstract: GD-32 rogers 4403
Text: =12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noise amplifiers QUALITY GRADE GG , 0.35 MAX -50 60 -1.5 -0.5 Unit V µA mA V dB dB VDS=2V, Gs Associated gain ID=10mA,f=12GHz NFmin. Minimum noise figure Note: Gs and NFmin. are tested with sampling inspection. Publication Date : Apr , package TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. V DS 50 V GS =-0.1V /STEP ID vs. V GS 50 VDS , 10 0 0 -1.0 -0.5 0.0 Drain to Source voltage V DS(V) Gate to Source voltage, V GS (V


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PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403
Not Available

Abstract: No abstract text available
Text: conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997 04-11 1/8 - T O S H IB A , without notice. 1997 04-11 2/8 - T O S H IB A MP4207 ELECTRICAL CHARACTERISTICS (Ta = 25 , €” — 1997 04-11 3/8 - T O S H IB A MP4207 Neh FET ID - ID - Vd S VdS H Z¡ D , œ z á 0.3 Rd s (ON) - Rd s (o n ) - id tc 1^ GS =4V 0.1 &z ~ oaO 0.05 & gM , 20 CASE TEMPERATURE Tc (°C) 1997 04-11 4/8 - T O S H IB A MP4207 Neh FET


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PDF MP4207 170mQ 10//A 100/JA
Not Available

Abstract: No abstract text available
Text: GS - 22 - 008" The Housing will withstand exposure to 265° peak temperature for 30 sec In a convenc+ion, infra-red or vapour reflow oven solder applications Pac king asper GS 14-1104 PART NO. I 0070 I


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PDF 2006-04-IT 8V/24A 25mOhm 5000M X-440UNC
Not Available

Abstract: No abstract text available
Text: RDS(on)i = 220 m£2 (MAX.) @ V gs = 4 V, Id = 1.5 A 0.411 RDS(on)2 = 150 m£2 (MAX.) @ V gs = 10 , 10 ßk V ds = 60 V, V gs = 0 V Gate Leakage Current Igss ±10 fiA V gs = ±20 V , 1.4 1 150 220 m£2 V gs = 4 V, Id = 1.5 A RDS(on)2 110 150 m£2 V gs = 10 , 125 PF V gs = 0 V Reverse Transfer Capacitance Crss 56 PF f = 1 MHz Turn-on , ns Rl tf 22 ns Qg 10.6 nC V ds = 48 V Gate to Source Charge Q gs 0.7


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PDF 2SK2857 2SK2857
6TZ61

Abstract: 6 TZ 70 6TZ70 6TZ60 6TZ71 TZ716 VEB M ik ro e le k tro n ik TZ61 TZ62 IP40G
Text: m ax. + 15 % Spitze-Spitze 50 H z bis 60 H z, ± 6 % Gs <; 3 w Ws < 5 VA < 5% < ^ 0 ,3 % 1 , 220 V Ws 0,5 A cos cp = 0,4 220 V Gs 0,1 A t = 0 ms 3600 Sch/h 66 V Gs 0,3 A 3. Ausführung und


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PDF
2007 - GD-32

Abstract: mgf4941al fet K 727
Text: .) Fig.1 High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION L to K band low noise , 13.5 - dB Minimum noise figure f=12GHz - 0.35 0.5 dB VGS(off) Gs NFmin , CHARACTERISTICS (Ta=25°C) ID vs. V DS 50 V GS =-0.1V/STEP VDS=2V DRAIN CURRENT, I D (mA) DRAIN CURRENT ID(mA) 50 ID vs. V GS 40 30 20 10 40 30 20 10 0 0 0 1 2 3 -1.0 Drain to Source voltage V DS(V) NF & Gs vs . ID 16 V DS=2V f=12GHz 14 Gs


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PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727
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