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SMC Corporation of America
ZS-27-C MOUNTING KIT; PANEL MOUNT; ACCY.; PNEUMATIC; PRESSURE SW.; ISE/ZSE 30 SER.
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ZS-27-C datasheet (1)

Part Manufacturer Description Type PDF
ZS-27-C SMC Accessories, Sensors, Transducers, PANEL MOUNT KIT ISE30/ZSE30 Original PDF

ZS-27-C Datasheets Context Search

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zener diode zS

Abstract: ZS11 100 watt zener diode LT 72 ZENER
Text: ) 193 178 160 145 132 118 104 96 86 78 72 66 56 53 46 42 38 35 30 28 27 25 SURGE CURRENT Ì TA = 25° C , at the lowest possible cost. ABSOLUTE MAXIMUM RATINGS: Power Dissipation @ 40° C (see derating curve) Storage and Operating 1 watt Temperature -65° C to +125° C ELECTRICAL CHARACTERISTICS 25° C , ZS 13 ZS 15 ZS 16 ZS 18 ZS 20 ZS 22 ZS 24 ZS 27 ZS 30 ZS 33 ZS 36 NOMINAL ZENER VOLTAGE V, @ lzt (volts) (note 1) 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36


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1988 - ISE70-F02-65

Abstract: ZSE40F-01-22L str 12006 ISE40-01-62 ZSE30-01-65-L ISE40-01-22L ISE40-01-62L ISE30-01-65-L ISE30-01-28 ISE70-F02-43
Text: NPN PNP 1-5V 4 -20 mA ZS- 27 -A ZS- 27 -B ZS-27-C Series ZSE40·ISE40 (Vacuum) (Pressure) · , incl. supply mounting cable, sensor plug ZS-28-B ZS-27-C ZS- 27 -D Compressed Air Micro Sensor , Output specifications PSE550 Note incl. supply cable, sensor plug ZS-28-B ZS-27-C ZS- 27 , analogue + 2 x NPN analogue + 1-5V 2 x PNP Voltage 12~24 V DC Panel adapter with cover ZS-24- C , with M12 connector, right-angled For Air ZS-31-A ZS-31-B ZS-31- C ISE75 (10MPa) MPa MPa


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PDF 32MPa 325MPa ISE70-F02-65 ZSE40F-01-22L str 12006 ISE40-01-62 ZSE30-01-65-L ISE40-01-22L ISE40-01-62L ISE30-01-65-L ISE30-01-28 ISE70-F02-43
ansoft software

Abstract: IPC-9501 ISM2400 ISM900 Q62702-G0080 smd marking code vd SCT595 D2 DIN 6784
Text: power Pin_max 20 dBm Channel temperature TCh 150 ° C Storage temperature Tstg ­ 55 . + 150 ° C Total power dissipation (Ts 80 ° C ) Ts: Temperature at soldering point , 1600 mW Ptot DC 1200 1000 800 600 400 200 0 0 50 100 ° C 150 TS b) Pulsed , rating for the dissipated power PPulse = "Pulse peak power" = 2 W c ) Reliability Considerations This , Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz TA = 25 ° C , f = 1.89 GHz, ZS = ZL = 50


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PDF ISM900, ISM2400, SCT-598 Q62702-G0080 IPC-9501 IPC-4202) GPW09182 ansoft software IPC-9501 ISM2400 ISM900 Q62702-G0080 smd marking code vd SCT595 D2 DIN 6784
2001 - D2 DIN 6784

Abstract: SMD MARKING CODE V75 v75 smd GPW09182 smd marking code vd Q62702-G0080 ISM900 ISM2400 rf marking Y2 Ansoft
Text: PIN_max 20 dBm Channel temperature TCh 150 ° C Storage temperature Tstg ­ 55 . + 150 ° C Total power dissipation (TS 80 ° C ) TS: Temperature at soldering point Ptot , Ptot DC 1200 1000 800 600 400 200 0 0 50 100 ° C 150 TS b) Pulsed Operation , the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 2 W c , DECT-Application, f = 1.89 GHz TA = 25 ° C , f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified


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PDF ISM900, ISM2400, SCT-598 Q62702-G0080 EHT08766 GPW09182 D2 DIN 6784 SMD MARKING CODE V75 v75 smd GPW09182 smd marking code vd Q62702-G0080 ISM900 ISM2400 rf marking Y2 Ansoft
2001 - D2 DIN 6784

Abstract: D3 DIN 6784
Text: Channel temperature Storage temperature Total power dissipation (TS 80 ° C ) TS: Temperature at soldering point Pulse peak power Symbol Value 6 1.0 20 150 ­ 55 . + 150 1.0 2.0 Unit V A dBm ° C ° C W W VD ID , 0 0 50 100 ° C 150 TS b) Pulsed Operation For the calculation of the permissible , = "Pulse peak power" = 2 W c ) Reliability Considerations This procedure yields the upper limit for , DECT-Application, f = 1.89 GHz TA = 25 ° C , f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics


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PDF ISM900, ISM2400, SCT-598 Q62702-G0080 EHT08766 GPW09182 D2 DIN 6784 D3 DIN 6784
2014 - Not Available

Abstract: No abstract text available
Text: (Typ.) Gate Voltage (VG) - 2.7 V (Typ.) Channel Temperature (TCH) 225 ° (Max) C Power Dissipation, CW (PD) 275 ° C 320 ° C -40 to 150 ° C Operation of this device outside the parameter , = 25° (PIN) C Channel Temperature (TCH) Mounting Temperature (30 Seconds) Storage Temperature , noted: TA = 25 ° VD = 32 V, IDQ = 50 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle C , Symbol , otherwise noted: TA = 25 ° VD = 32 V, IDQ = 50 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle C , Symbol


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PDF TGF3015-SM TGF3015-SM
2004 - BUB 0641

Abstract: PERKINELMER FLASH TUBE PerkinElmer Optoelectronics BUB 0641 PerkinElmer STS 36 ZS 1052 PerkinElmer Optoelectronics du 7670 linear flashlamps d 1052 ZS-1052
Text: runways Aircraft landing lights Curing systems Speed cameras Emergency exits w w w. o p t o e l e c t ro n i c s . p e r k i n e l m e r. c o m D A T A S H E E T LIGHTING SOLUTIONS Flashlamps , d r a AGA 0017 1 1 1 170 300 350 17 27 49 3.2 ­ ­ , 350 400 ­ 27 ­ 6 20 9 BR 0465 9 10 10 250 340 400 ­ ­ , specific lamp and application. w w w. o p t o e l e c t ro n i c s . p e r k i n e l m e r. c o m 3


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PDF 800-775-OPTO DTS0904P BUB 0641 PERKINELMER FLASH TUBE PerkinElmer Optoelectronics BUB 0641 PerkinElmer STS 36 ZS 1052 PerkinElmer Optoelectronics du 7670 linear flashlamps d 1052 ZS-1052
MWA5121

Abstract: No abstract text available
Text: broadband linear appli- e Gain 27 dB Typ e Complete o Thin Gain e Low Noise e LOW Block , Distortion IM2 = ­45 dB, IM3 = ­59 dB `0' 7 SURFACE r A T c G- H , ,1982 4 CONTROLLINGIMENSION: O INCH. ` c Tstg re ­30to ` c t$+)$\ ~.'?l~,$$:l , Q Operating Temperature Top ­Ioto +40 DIM A B c D G H J K ` c @ MILLIMETERS MIN MAX 27 ,99 3200 2.54 500 1549 18,99 0.12 0.38 2.54 BSC 0,38 0.63 0.99 3:99 5.06


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MOTOROLA wideband hybrid amplifiers

Abstract: MWA5121 wideband hybrid MOTOROLA wideband hybrid
Text: stage amplifier designed for broadband linear applications up to 900 MHz. • Gain 27 dB Typ â , GENERAL-PURPOSE HYBRID AMPLIFIER CASE 790-01. STYLE 1 PLASTIC ABSOLUTE MAXIMUM RATINGS (TA - 25° C , c 15.19 18.99 0.610 0.748 D 012 0.38 0.005 0.015 G 2.54 BSC 0100 BSC H 0.38 0.63 0.015 0.025 J , Copyrighted By Its Respective Manufacturer MWA5121 ELECTRICAL CHARACTERISTICS 1TA - 25° C , Vçç - 20 V, Zs , 100 MHz) G 25 27 30 dB Gain Flatness (f = 30 to 890 MHz, Zg = Z{_ = 50 il) (f = 30 to 890 MHz, Zs = Z


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PDF MWA5121 MWA5121 MOTOROLA wideband hybrid amplifiers wideband hybrid MOTOROLA wideband hybrid
2013 - Not Available

Abstract: No abstract text available
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 17 20 , 25 27 27 27 27 Revision 1.1, 2012-09-17 BFP640ESD List of Tables List of Tables , on Infineon’s reliable high volume silicon germanium carbon (SiGe: C ) heterojunction bipolar , €¢ Features Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe: C wafer , gain Gms typical at 1.5 GHz, 23 dB Gms at 2.4 GHz, 30 mA 27 dBm OIP3 typical at 2.4 GHz, 30 mA Easy


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PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP
2014 - ES51919/ES51920

Abstract: Cyrustek
Text: : 0.63VRMS typ. • 6 range resistor range used • Test range: L: 20.000 µH ~ 2000 H C : 200.00 pF , ADC circuit design is implemented in the ES51919/ES51920 chipset. A fully smart measurement for L/ C , Ver 2.7 1 14/10/23 Introduction The ES51919/ES51920 chipset is a total solution for high , . Because of high integrated circuit design, a smart measurement for L/ C /R is possible (AUTOLCR mode). It means the user could measure the L/ C /R components directly at AUTOLCR smart mode without changing the


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PDF ES51919/ES51920 100kHz QFP-100L ES51919 SSOP-48L ES51920 ES51919/ES51920 ES51920 Cyrustek
ZSE30

Abstract: ITV2030 SMC zse40 ZSE40 ISE30 PS1000-R06L itv2050 PF2A pressure sensor SMC electronic drum kit
Text: -04N2L4 ITV2030-31N2L4 ITV2050-01N2L4 ITV2050-04N2L4 ITV2050-31N2L4 ZS- 27 -B ZS-27-C ZS-24-A ZS-22-A ZS-26- C , D O C (+ D UT ) C () 29.4 27.2 MP Ø12 Ø7.2 1 a 18 5 Fig. 6 10 M5 x0 , Technologies Range Temperature Life Part No.1 5 Part No. Up to 32" 0° C ~ 50° C 30 Days 734-1162-ND 125.00 , (VDC) (mA) Output ° C Part No. Each ZSE30/ISE30 Series - 2-Color Display -100 ~ 100kPa 500kPa , Digi-Key Price (mA) Output ° C Part No. Each PF2A Series - Digital Air Flow Switch 12 ~ 24 150


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PDF 606-1040-ND 4-20mA 606-1041-ND ZSE30-T1-65 ZSE30-T1-25 ISE30-T1-65 ISE30-T1-25 ZSE30-N7L-65 ZSE30-N7L-25 ISE30-N7L-65 ZSE30 ITV2030 SMC zse40 ZSE40 ISE30 PS1000-R06L itv2050 PF2A pressure sensor SMC electronic drum kit
1998 - Q62702-F788

Abstract: No abstract text available
Text: and reel) BFQ 74 74 Q62702-F788 Pin Configuration 1 2 3 4 B E C Package1 , 10 MHz ICM 45 Base current IB 5 Total power dissipation, TS 115 ° C 3) Ptot 300 mW Junction temperature Tj 175 ° C Ambient temperature range TA ­ 65 . + , Electrical Characteristics at TA = 25 ° C , unless otherwise specified. Parameter Symbol Values Unit , VBE ­ 0.78 ­ V BFQ 74 BFQ 74 Electrical Characteristics at TA = 25 ° C , unless


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PDF Q62702-F788 Q62702-F788
2014 - Not Available

Abstract: No abstract text available
Text: (Typ.) 25 mA (Typ.) 326 mA (Typ.) - 2.7 V (Typ.) 225 ° (Max) C 7.05 W (Max) 9.1 W (Max , 100 V -50 to 0 V 0.6 A -1.25 to 2.1 mA 7.5 W RF Input Power, CW, T = 25° (PIN) C 25 dBm Channel Temperature (TCH) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage , all recommended operating conditions. -40 to 150 ° C Operation of this device outside the , : 100uS Pulse Width, 20% Duty Cycle C , Symbol Parameter GLIN P3dB PAE3dB G3dB Min Linear


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PDF T1G3000532-SM T1G3000532-SM 30MHz
2014 - Not Available

Abstract: No abstract text available
Text: (Typ.) 326 mA (Typ.) - 2.7 V (Typ.) 225 ° (Max) C 7.05 W (Max) 9.1 W (Max) Electrical , 0 V 0.6 A -1.25 to 2.1 mA 7.5 W RF Input Power, CW, T = 25° (PIN) C 25 dBm Channel Temperature (TCH) 275 ° C Mounting Temperature (30 Seconds) 320 ° C Storage Temperature , operating conditions. -40 to 150 ° C Operation of this device outside the parameter ranges given , Cycle C , Symbol Parameter GLIN P3dB PAE3dB G3dB Min Linear Gain, Power Tuned Output Power


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PDF T1G3000532-SM T1G3000532-SM 30MHz
2009 - IP1dB

Abstract: sdars BGB707 SDMB BGB707L7ESD wifi schematic
Text: Data Sheet, Rev. 3.1, August 2009 BGB707L7ESD SiGe: C Wideband MMIC LNA with Integrated ESD , or other persons may be endangered. BGB707L7ESD BGB707L7ESD, SiGe: C Wideband MMIC LNA with , , 2009-08-14 BGB707L7ESD SiGe: C Wideband MMIC LNA with Integrated ESD Protection 1 SiGe: C Wideband , consumption · High input compression point · Excellent noise figure from latest SiGe: C technology · , , WLAN, UWB, LNB 2 Product Brief The BGB707L7ESD is a Silicon Germanium Carbon (SiGe: C ) low


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PDF BGB707L7ESD IP1dB sdars BGB707 SDMB BGB707L7ESD wifi schematic
2009 - cordless phone ic

Abstract: BGB707L7ESD mobile fm system ic transistor 2xw wifi 2.4 ghz pcb layout IP1dB sma smd transistor marking code 24 Germanium Transistor
Text: Data Sheet, Rev. 3.1, August 2009 BGB707L7ESD SiGe: C Wideband MMIC LNA with Integrated ESD , or other persons may be endangered. BGB707L7ESD BGB707L7ESD, SiGe: C Wideband MMIC LNA with , , 2009-08-14 BGB707L7ESD SiGe: C Wideband MMIC LNA with Integrated ESD Protection 1 SiGe: C Wideband , consumption · High input compression point · Excellent noise figure from latest SiGe: C technology · , , WLAN, UWB, LNB 2 Product Brief The BGB707L7ESD is a Silicon Germanium Carbon (SiGe: C ) low


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PDF BGB707L7ESD cordless phone ic BGB707L7ESD mobile fm system ic transistor 2xw wifi 2.4 ghz pcb layout IP1dB sma smd transistor marking code 24 Germanium Transistor
2013 - Not Available

Abstract: No abstract text available
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 , 25 25 27 27 27 27 Revision 1.2, 2012-09-19 BFP640FESD List of Tables List of Tables , based on Infineon’s reliable high volume silicon germanium carbon (SiGe: C ) heterojunction bipolar , €¢ Features Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe: C wafer , Configuration Package Data Sheet 1=B 2=E 8 3= C Marking 4=E T4s Revision 1.2


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PDF BFP640FESD BFP640FESD:
2012 - Not Available

Abstract: No abstract text available
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 11 11 11 12 17 20 , 25 27 27 27 27 Revision 1.1, 2012-10-15 BFP720ESD List of Tables List of Tables , on Infineon’s reliable high volume silicon germanium carbon (SiGe: C ) heterojunction bipolar , €¢ Features Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe: C wafer , Package BFP720ESD SOT343 Data Sheet Pin configuration 1=B 2=E 8 3= C Marking 4


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PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP
2012 - Not Available

Abstract: No abstract text available
Text: Characteristics 39 36 33 30 27 0.45GHz 0.90GHz 0.15GHz G [dB] 24 21 18 15 12 9 6 3 0 10 20 30 40 I [mA] C , (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27 Noise , 27 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Table 9 Table 10 Table 11 Table 12 Maximum Ratings at TA = 25° C (unless otherwise specified). . . . . . , Characteristics at TA = 25 ° C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF BFP420F BFP420F:
2005 - bfp740

Abstract: No abstract text available
Text: High maximum stable gain Gms = 27 dB at 1.8 GHz · Gold metallization for extra high reliability · 150 , Configuration 2=E 3= C 4=E Symbol VCEO Package SOT343 Value Unit - Collector-emitter voltage TA > 0° C TA 0° C V 4 3.5 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 89° C VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 30 3 160 150 -65 . 150 -65 . 150 mW ° C mA Junction temperature Ambient temperature Storage


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PDF BFP740 VPS05605 OT343 bfp740
2005 - RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes RF NPN POWER TRANSISTOR 2.5 GHZ GERMANIUM TRANSISTOR germanium transistors NPN BFP740 BGA420 E6327
Text: Gms = 27 dB at 1.8 GHz · Gold metallization for extra high reliability · 150 GHz fT-Silicon , BFP740 Marking R7s 1=B Pin Configuration 2=E 3= C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage Value VCEO Unit V TA > 0° C 4 TA 0° C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO , Total power dissipation1) Ptot 160 mW Junction temperature Tj 150 ° C Ambient


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PDF BFP740 VPS05605 OT343 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes RF NPN POWER TRANSISTOR 2.5 GHZ GERMANIUM TRANSISTOR germanium transistors NPN BFP740 BGA420 E6327
2012 - Not Available

Abstract: No abstract text available
Text: in GHz . . . . . . . . . . . . . . . . . . . . 27 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27 Package Outline . . . . . . . . . . , Table 12 Data Sheet Maximum Ratings at TA = 25° C (unless otherwise specified). . . . . . . . . . , Sheet TSFP-4-1 Pin Configuration 1=B 2=E 3= C 7 Marking 4=E AMs Revision 1.0, 2011-09-05 BFP420F Maximum Ratings 2 Maximum Ratings Table 1 Maximum Ratings at TA = 25° C


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PDF BFP420F BFP420F:
2013 - Not Available

Abstract: No abstract text available
Text: . . . . . . . 27 Datasheet 4 11 11 11 12 16 19 Revision 1.2, 2013-07-29 BFP450 , 27 27 27 27 Revision 1.2, 2013-07-29 BFP450 List of Tables List of Tables Table 3-1 , =B 2=E 8 3= C Marking 4=E ANs Revision 1.2, 2013-07-29 BFP450 Maximum Ratings 3 , OUT E C B E VB Bias-T (Pin 1) IN Figure 5-1 BFP450 Testing Circuit Table 5-3 , 80 100 I [mA] 120 140 160 180 160 180 C Figure 5-7 Transition Frequency fT


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PDF BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP
2013 - Not Available

Abstract: No abstract text available
Text: Datasheet 27 Revision 1.1, 2012-09-11 w w w . i n f i n e o n . c o m Published by Infineon , . . . . . . . 27 Datasheet 4 11 11 11 12 16 19 Revision 1.1, 2012-09-11 BFP450 , 27 27 27 27 Revision 1.1, 2012-09-11 BFP450 List of Tables List of Tables Table 3-1 , =B 2=E 8 3= C Marking 4=E ANs Revision 1.1, 2012-09-11 BFP450 Maximum Ratings 3 , fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E


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PDF BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP
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