The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM

ZENER A20 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
in5349b

Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Text: rïïwri Mìcrosemi Corp. 1N5333B thru 1N5388B FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • AVAILABLE IN ±5, ±10 or ±20 % TOLERANCES (Note 1) MAXIMUM RATINGS , 1.0 1.0 0.9 0.9 3.00 3.00 3.00 4.00 5.00 5.00 SILICON 5 WATT ZENER DIODE r taw POLARITY BAND , ±10% tolerance and NO SUFFIX denotes a ±20 % tolerance. If tighter tolerance is required, consult factory. NOTE 2 Nominal Zener Voltage (Vz) is read with the device in standard test clips with 3/8 to 1/2 inch spacing


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PDF 1N5333B 1N5388B in5349b IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
INS333-IN5388

Abstract: IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
Text: denotes a ±20 % tolerance. NOTE 2 Nominal Zener Voltage (Vz) is read with the device in standard test , Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■High power regulator , (°C| 3/8" Iron body TYPICAL ZENER IMPEDANCE VS. ZENER CURRENT FOR TYPES SHOWN 11 IN Ijr. ZENER CURflENT(mA) TYPICAL ZENER IMPEDANCE VS. ZENER CURRENT FOR TYPES SHOWN a S B 1 i 10 1M Ijj Zener , allowed to stabilize for a penod of 40 ± 10 milliseconds at 25°C (+8, -2CC). NOTE 3 The Zener Impedance


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PDF INS333-IN5388 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1NS381B 1N5382B 1NS383B IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
IN5350B

Abstract: 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 1N53358 IN5359b 1N53768
Text: column. NOTE 5 The Maximum Zener Current (I^M) shown is for ±5% tolerance devices. IZm for ±10% and ±20 , , Inc. 5 WATT ZENER DIODES HIGH SURGE CURRENT CAPABILITY 3.3 TO 200 VOLTS ELECTRICAL CHARACTERISTICS , A denotes a ± 10%. Cdenotes ± 296. D denotes ± 1%, and no suffix denotes a ±20 % tolerance. NOTE 2 Nominal Zener Voltage (Vz) is read with the device in standard test clips with 3/8 to 1/2 inch , of 40 ±10 milliseconds at 25°C (+8, -2°Q. NOTE 3 The Zener Impedance (ZZT or ZZK) is derived from


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PDF T0D037Ã 000003b 1NS3338 IN533dB 1N53358 1N533SB 1N5337B IN5350B 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 IN5359b 1N53768
in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Text: denotes a ±20 % tolerance. NOTE 2 Nominal Zener Voltage (Vz) is read with the device in standard test , ) 941-6300 FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOB AVAILABLE , ,00 5.00 1N5333B thru 1N5388B SILICON 5 WATT ZENER DIODES 0J30/0.145 3.302/3.683 POLARITY BAND , allowed so stabilize for a period of 40 +10 milliseconds at 25°C (+8, -2°C). NOTE 3 The Zener Impedance , equal to 10% of the DC zener current (Izy or Izk) superimposed on Izj or Izk respectively. NOTE 4 The


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PDF 1N5342 1N5344B in5338b in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
2006 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0F to RD82F 1 W PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable dissipation of 1 W and a planar type glass sealed DHD 25 MIN. (Double Heatsink Diode) structure. FEATURES • The zener voltage series has a wide , for the zener voltage nominal φ 3.0 MAX. Cathode indication 25 MIN. value. ORDERING


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Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0F to RD82F 1 W PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable dissipation of 1 W and a planar type glass sealed DHD 25 MIN. (Double Heatsink Diode) structure. FEATURES φ 3.0 MAX. 5 MAX. • The zener , series is employed for the zener voltage nominal Cathode indication 25 MIN. value.


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2006 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0F to RD82F 1 W PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable dissipation of 1 W and a planar type glass sealed DHD 25 MIN. (Double Heatsink Diode) structure. FEATURES • The zener voltage series has a wide , for the zener voltage nominal φ 3.0 MAX. Cathode indication 25 MIN. value. ORDERING


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zener diode zS

Abstract: ZS11 100 watt zener diode LT 72 ZENER
Text: 135 125 NOTE 1. TOLERANCE—The type numbers listed have a standard Zener Voltage Tolerance of ±20 , . MAXIMUM ZENER CURRENTS—Maximum Zener Current ratings are based on maximum voltages of ±20 % tolerance , types ZS 4.7 thru ZS 36 represent a line of 1 watt, axial lead, zener diodes designed for use in , ZS 13 ZS 15 ZS 16 ZS 18 ZS 20 ZS 22 ZS 24 ZS 27 ZS 30 ZS 33 ZS 36 NOMINAL ZENER VOLTAGE V, @ lzt , . MEASUREMENT OF ZENER IMPEDANCE—Zener Impedance Z„ is derived from the 60 cycle AC voltage which results


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PDF
2004 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable φ 0.5 25 MIN. dissipation of 500 mW and a , indication • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. φ 2.0 MAX. 25 MIN. • The E24 series is employed for the zener voltage nominal value


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D1N4728

Abstract: EQUIVALENT OF ZENER DIODE IN5229 IN5242A IN4749 IN5237 in5231 IN5233 IN5232 IN5226A in5242
Text: 3469674 FAIRCHILD SEMICONDUCTOR 64D 27491 D, ^TSShTS 1N4728 through 1N4752 1 w Silicon Zener Diodes , Maximum Maximum Zener Zener Current Zener Knee Current Reverse Voltage Zener Zener Characteristic , , superimposed on Zener test current, l^f. 4. Type numbers without suffix have ± 10% folerance on nominal V^. Type numbers with suflfx A have ±5% tolerance on nominal Vj. 5. The Zener impedances and Zzk derived , . vaiue of l^f and I^k respectively. 8. Maximum Zener Current O2M) 's baaed on the maximum Zener voltage


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PDF 34b1fc 1N4009/FDLL4009 T-03-0Â D1N4728 EQUIVALENT OF ZENER DIODE IN5229 IN5242A IN4749 IN5237 in5231 IN5233 IN5232 IN5226A in5242
2006 - Not Available

Abstract: No abstract text available
Text: Temperature Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1 , Metal PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , Topr -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V HBM - , ºC ≤TJ ≤ 110 ºC) Break voltage of Metal PCB is 6.5kVAC [6] It is included the zener chip to , Temperature Topr -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V


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PDF X32280
Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable φ 0.5 25 MIN. dissipation of 500 mW and a planar type glass , zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. φ 2.0 MAX. 25 MIN. • The E24 series is employed for the zener voltage nominal value. ORDERING


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2004 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING (Unit: mm) DESCRIPTION These products are zener diodes with an allowable φ 0.5 25 MIN. dissipation of 500 mW and a planar type glass , zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. φ 2.0 MAX. 25 MIN. • The E24 series is employed for the zener voltage nominal value. ORDERING


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1206 104 50v

Abstract: 4M4.3AZ m21z 1N746 1N957 4M36
Text: positive with respect to anode end when operated in the zener region. These devices are in the same 400 mW , standard voltage (Vz) tolerance of ±20 %. For closer tolerances, add suffix "10" for ±10% or "5" for  , mA) NOMINAL ZENER TEST CURRENT MAXIMUM ZENER IMPEDANCE MAXIMUM DC ZENER CURRENT (M mA REVERSE , ) MAXIMUM NOMINAL ZENER MAXIMUM REVERSE LEAKAGE CURRENT ZENER TEST IMPEDANCE DC ZENER , — Nominal zener voltages between those shown. 2 — Matched sets: (Standard Tolerances are Â


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PDF 1/4M200Z 1N746 1N957 ava52 1206 104 50v 4M4.3AZ m21z 4M36
2013 - Not Available

Abstract: No abstract text available
Text: NZD5V1MUT5G Product Preview Zener Voltage Regulators 200 mW Micro Packaged This Zener diode is , Cathode Specification Features: • Standard Zener Breakdown Voltage: 5.1 V • Steady State Power , ) http://onsemi.com Symbol Max Unit ±20 ±20 kV PD 300 mW RqJA 400 °C , Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR IR Reverse Leakage Current @ VR VR


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PDF 152AF
diode IN4000

Abstract: 1N29B IN4000 IN4000 silicon diode Zener diode ZTK in2970 IN4000 series IN4000 diode IN3993 IN2987
Text: €¢ ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ±5%, ±10% and ±20 % (See Note 1) • MAXIMUM , NOMINAL IMPEDANCE ZENER TYPICAL MAX" JEOEC ZENER ZENER (Now 3) CURRENT TEMP. LEAKAGE POLARITY TYPE , ZENER DIODES © 10-32 unf-2ai modi pitch dia. min. .1658 max. .1687 to withstand a torque op to 30 in , : suffix B indicates ±5% tolerance, suffix A indicates + 10%, no suffix indicates ±20 % tolerance. If tighter tolerance is required, consult factory. superimposed on Izt or izk- When making zener impedance


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PDF lNZ970thru 1N3015B 1N4000A 80mW/Â diode IN4000 1N29B IN4000 IN4000 silicon diode Zener diode ZTK in2970 IN4000 series IN4000 diode IN3993 IN2987
1n4000 DIODE

Abstract: IN3993 IN4000 silicon diode in2970 IN4000 IN3015 1N3993-1N4000 MIL-S-I9500 1N2981B diode IN4000
Text: call: (602) 941-6300 1N2970 thru 1N3015B and 1N3993 thru 1N4000A FEATURES • ZENER VOLTAGE 3.9 to 200V . VOLTAGE TOLERANCES; ±5%, ±10% and ±20 % (See Note 1) • MAXIMUM RELIABILITY FOR MILITARY , CHARACTERISTICS @ 30°C Case Temperature MAX. DYNAMIC MAX. DC NOMINAL IMPEDANCE ZENER TYPICAL MAX" JEDEC ZENER ZENER (Not* 31 CURRENT TEMP. LEAKAGE TYPE NO. VOLTAOE 7S°C CURRENT POLARITY (Nom , 300 2000 40 .100 10 152.0 SILICON 10 WATT ZENER DIODES 0.060 „,.„ 1524 nqm —i 10-32 unf


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PDF 1N2970 1N3015B 1N3993 1N4000A 1n4000 DIODE IN3993 IN4000 silicon diode in2970 IN4000 IN3015 1N3993-1N4000 MIL-S-I9500 1N2981B diode IN4000
Not Available

Abstract: No abstract text available
Text: 1kΩ G Zener Di 12V * PC board : Copper foil area of drain portion shoud be 1cm2 or more, thickness 1.7mm. S Zener Di 8.2V s Electrical Characteristics (Ta = 25˚C) Parameter Min , voltage VDS 20 10 0 10 20 30 0 –10 –20 40 30 20 10 –30 0 Gate-Source voltage –3.0 VGS (V) –4.0 40 30 20 0 –1.0 –2.0 Gate-Source voltage VGS (V) –20 –10 0 Input power VDS=6V IDS=100mA f=940MHz Pin


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PDF 2SK690 tem10dBm
2005 - Not Available

Abstract: No abstract text available
Text: Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1] SSC , PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [7] *Notes : [1] SSC , PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , Temperature Topr -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V


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PDF X32180
2005 - Not Available

Abstract: No abstract text available
Text: -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 , ≤TJ ≤ 110 ºC) Break voltage of Metal PCB is 6.5kVAC [6] It is included the zener chip to protect , Temperature Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 ,000V HBM - *Notes : [1 , Metal PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD , Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 ,000V HBM - *Notes : [1] SSC


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PDF W11191, W11192 N11191, N11192 B11191, B11192 G11191, G11192 R11191, R11192
2005 - Not Available

Abstract: No abstract text available
Text: -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 , ≤TJ ≤ 110 ºC) Break voltage of Metal PCB is 6.5kVAC [6] It is included the zener chip to protect , Temperature Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 ,000V HBM - *Notes : [1 , Metal PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD , Tstg -40 ~ +120 ºC ESD Sensitivity [6] - ±20 ,000V HBM - *Notes : [1] SSC


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PDF W11190 N11190 D11190 B11190 G11190 R11190 C11190 A11190 Rev08
IN5844

Abstract: IN5844 diode diode in5844 Diode "IN5844" IN5843 1N5837 diode 1N5841 zener diode 1N5847 1N5859 1N5838
Text: SPRAGUE Econoline Plastic-Molded Silicon Diodes 1N5837 thru 1N5881 ZENER REGULATOR DIODES FEATURES • 500 mW Power Dissipation • Low-Cost T0-92 Package • Silicon-Oxide Passivated Junction • 2.4 V thru 62 V Ratings • ±5%, ±10%, ±20 % Zener Tolerances • In-Line Leads for Easy , 1600 0.1 47 8.0 +0.110 •Type numbers shown are for a Zener voltage tolerance of ±20 %. To order a , Zener Nom. Zener Volt. Max. Zener Impedance Leakage Current Zener Current Voltage Coeff. Type Vzr


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PDF 1N5837 1N5881 T0-92 1N5838 1N5839 IN5840 NV-101 IN5844 IN5844 diode diode in5844 Diode "IN5844" IN5843 diode 1N5841 zener diode 1N5847 1N5859
2006 - Not Available

Abstract: No abstract text available
Text: Temperature Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1 , Metal PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [7] *Notes : [1] SSC , PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1] SSC maintains a tolerance of ±10% on


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PDF X32280
2005 - Not Available

Abstract: No abstract text available
Text: Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1] SSC , PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD Sensitivity [7] *Notes : [1] SSC , PCB is 6.5kVAC [6] It is included the zener chip to protect the product from ESD. * Caution 1 , ±20 ,000V HBM - ESD Sensitivity [6] *Notes : [1] SSC maintains a tolerance of ±10% on


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PDF X32280
2006 - Not Available

Abstract: No abstract text available
Text: Topr -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V HBM - , ºC ≤TJ ≤ 110 ºC) Break voltage of Metal PCB is 6.5kVAC [6] It is included the zener chip to , Temperature Topr -30 ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V , zener chip to protect the product from ESD. * Caution 1. Please do not drive at rated current more , ~ +85 ºC Storage Temperature Tstg -40 ~ +120 ºC - ±20 ,000V HBM - ESD


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PDF X32180
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