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2007 - mp2a5100

Abstract: ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
Text: No file text available


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PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
2003 - YA868C15

Abstract: No abstract text available
Text: Device Name DATE CHECKED : Type Name : YA868C15R Spec. No. : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any t h ird pa rt y n o r u s ed f o r th e m an uf a c tu rin g p u rp o se s wit h o u t the express written consent Fuji Electric Co.,Ltd. S P E C I F I C AT I O N ( T E N TAT I V E ) MS5D1808 SILICON


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PDF YA868C15R MS5D1808 H04-004-07 H04-004-03 YA868C15
2003 - YA868C15

Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG975C6R YG862C15R yg971s6 YA865C12R YG862C12R
Text: YG868C12R TS868C12R YA862C15R YG862C15R TS862C15R YA865C15R YG865C15R TS865C15R PH865C15 YA868C15R YG868C15R


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PDF O220AB O220F YA971S6R YG971S6R YA972S6R YG972S6R YA868C15 ya868c12 YG972S6 yg862c15 yg865c15 YG975C6R YG862C15R yg971s6 YA865C12R YG862C12R
2004 - YA868C15

Abstract: YA868C15R
Text: YA868C15R (30A) (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 0 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 0 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM , Approximate mass Recommended torque 0.3 to 0.5 2 N·m g (150V / 30A ) YA868C15R (30A , (V) 1000 YA868C15R (30A) (150V / 30A ) Surge Current Ratings (max.) Surge Capability


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PDF YA868C15R YA868C15R O-220 YA868C15
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