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XRJM-S-04-8-8-E-901 XMULTIPLE Technologies Inc Chip One Exchange 15 - -

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C0613

Abstract: XRJM-S-02-8-8-4-7G1 RJ-4S 31AF
Text: No file text available


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PDF XRJM-S-02-8-8- XRJM-S-02-8-8-4-7G1 C0613 XRJM-S-02-8-8-4-7G1 RJ-4S 31AF
ru 94v0

Abstract: ru 94v-0 94v0 ru 104M
Text: (4 REQ'D) 03.25 [00.128]. (3 REQ'D) 1.02 [0.040] E .04 [0.080] 7.14 [0.281] 9.920 [0.390] 13.7E±0.05 [0.540±0.002T 4Î- E.E9 [0.090] E .03 [0.080] 15.75±0.05 [0.620±0.002]" \%W


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PDF XRJ-S-01-B-B-X-F2 XRJM-S-06-8-8-X-F2 ru 94v0 ru 94v-0 94v0 ru 104M
1999 - 2SC5006

Abstract: A 2630 0717
Text: 0.576 0.570 0.565 0.561 0.555 0.549 0.545 0.539 0.537 0.528 0.522 0.515 0.505 0.488 0.482 , 0.638 0.648 0.654 0.655 0.666 0.669 0.682 0.696 0.715 ­51.6 ­ 90.1 ­120.7 ­144.4 ­164.3 , . MAG. ANG. MAG. ANG. MAG. ANG. 0.725 0.618 0.554 0.510 0.488 0.475 0.471 0.470 0.467 0.467 0.470 0.471 0.473 0.473 0.480 0.481 0.482 0.488 0.489 0.493 0.497 0.500 0.505 , ­3.5 ­12.8 ­21.9 ­31.1 ­39.5 ­48.1 ­57.0 ­65.0 ­73.7 ­81.5 ­ 90.1 ­97.8 ­105.9 ­113.6


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PDF PA810TC 2SC5006) PA810TC PA810TC-T1 2SC5006 A 2630 0717
BFR 965

Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Text: -23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage , 90.1 88.4 81.8 75.8 70.7 68.4 67.1 65.8 61.3 50.9 41.7 0.019 0.034 0.045 0.054 0.062 , 41.7 ­ 48.2 153.1 133.0 120.0 110.6 103.7 98.4 94.2 90.1 86.6 84.9 83.4 77.9 72.5 67.9 , 0.786 0.687 0.623 0.582 0.554 0.536 0.523 0.513 0.508 0.504 0.488 0.477 0.476 0.476 0.476 , 0.488 0.482 0.479 0.476 0.467 0.459 0.459 0.459 0.460 0.459 0.454 0.421 0.424 ­ 17.4 ­


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PDF Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
1999 - 1 307 329 082

Abstract: nec 2035 744 2SC5006 09 06 848 0521
Text: 0.570 0.565 0.561 0.555 0.549 0.545 0.539 0.537 0.528 0.522 0.515 0.505 0.488 0.482 , . ANG. MAG. ANG. ­51.6 ­ 90.1 ­120.7 ­144.4 ­164.3 179.5 164.9 151.3 139.2 127.9 117.2 , . ANG. MAG. ANG. 0.725 0.618 0.554 0.510 0.488 0.475 0.471 0.470 0.467 0.467 0.470 0.471 0.473 0.473 0.480 0.481 0.482 0.488 0.489 0.493 0.497 0.500 0.505 0.505 0.507 0.517 , ­48.1 ­57.0 ­65.0 ­73.7 ­81.5 ­ 90.1 ­97.8 ­105.9 ­113.6 ­121.5 ­129.0 ­136.8 ­143.9 ­151.3


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PDF
TELEFUNKEN* U 413 B

Abstract: MAR 641 TRANSISTOR transistor MAR 439
Text: wide band an tenna amplifier. T emic S e m i c o n d u c t o r s Features · · · High power gain , 288 TELEFUNKEN Semiconductors Rev. A2, 26-Mar-97 Temic S e m i c o n d u c t o r s BFR96T Conditions Symbol Ic e s Ic b o Electrical DC Characteristics Tj = 25°C, unless otherwise specified , intercept point V c e = 10 V, Ic = 50 mA, f = 800 MHz Symbol fj C ce C cb Min. 4 Typ. 5 Max , 20 30 40 290 TELEFUNKEN Semiconductors Rev. A2, 26-Mar-97 Temic S e m i c o n d u c


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PDF BFR96T BFR96T 26-Mar-97 TELEFUNKEN* U 413 B MAR 641 TRANSISTOR transistor MAR 439
7039a

Abstract: A1069
Text: 47.4 0.550 -53.6 1000 0.544 -108.6 5.868 102.9 0.088 45.8 0.488 , -131.6 4.542 90.1 0.098 46.2 0.414 -63.4 1600 0.421 -140.5 4.042 85.4 , 54.9 0.613 -46.4 600 0.544 -104.7 10.498 111.4 0.056 52.2 0.488


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PDF EC3H07BA 10GHz S21e2 UL94HB) A1069-6/6 7039a A1069
NE334S01

Abstract: No abstract text available
Text: TEMPERATURE (t a = 25 c) TYPICAL CONSTANT NOISE FIGURE CIRCLE (V ds = 2 V, Ids = 15 mA, f = 4 GHz) E , DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE < E < E £ £ o o r o Q r o Q Gate , 139.2 131.0 123.0 115.5 108.5 102.0 95.8 90.1 84.4 78.8 73.6 68.2 63.2 58.7 53.9 MAG 5.985 5.938 5.855 , -54.0 -57.5 -61.2 -64.3 -68.0 MAG 0.538 0.535 0.529 0.518 0.504 0.488 0.467 0.445 0.420 0.394 0.366 , 17.0 17.5 18.0 Note: 1. Gain Calculations: MAG = l^ 211 IS i 2 1 ( k ± \ / K 2 - 1 ) . W h e n K < 1


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PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B
zo 107 NA P 611

Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC S e m i c o n d u c t o r s BFR96T Silicon NPN Planar RF Transistor Electrostatic , specified r:ii:n iK -k -is Tem ic S e m i c o n d u c t o r s ' k-si C o n d ilio n s S u n , Semiconductors Rev. A3, 31-Oct-97 Temic S e m i c o n d u c t o r s BFR96T Common Emitter S-Parameters , S-Parameters Tem ic S e m i c o n d u c t o r s Zo = 50 Q Sli Vc|./V 1 , , niA l/\111/ LIN \i \c; 0.454 0.491 0.494 0.492 0.488 0.482 0.471 0.461 0.449 0.459 0.492 0.493 0.497 0.494 0.489 0.472 0.464 0.451


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PDF BFR96T BFR96T D-74025 31-Oct-97 zo 107 NA P 611 BFR96 L 0403 817
2007 - transistor sp 772

Abstract: No abstract text available
Text: 0.435 - 90.1 1.4 0.639 -166.9 7.359 60.0 0.027 19.4 0.443 -93.0 1.5 , 36.3 0.033 21.1 0.488 -108.4 2.5 0.525 147.5 4.403 17.4 0.041 19.9


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PDF RT232 50MHz 33dBm 36dBm 900MHz 14GHz IMT-2000 SP-12 RT232 IMT-2000, transistor sp 772
2007 - Not Available

Abstract: No abstract text available
Text: 19.3 0.431 -87.0 1.3 0.647 -162.4 7.857 64.4 0.027 19.5 0.435 - 90.1 , 21.1 0.488 -108.4 2.5 0.525 147.5 4.403 17.4 0.041 19.9 0.529 -118.8


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PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,
2001 - equivalent of 662K

Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W MPR 55 F resistor ceramic 662k MDS-1212 ML10L meg05n
Text: 0.75350 10022K 2322K 5 22±1.5 9.5±1 9.0±1 0.80 7 35±1.5 9.5±1 9.0±1 10 48±1.5 9.5±1 9.0±1 15 48±1.5 12.5±1.2 12.5±1.2 20 63.5±2.0 12.5±1.2 , (mm) Rated power (W) L P W1 W2 W3 W4 3 24±1.2 12.5±1 9±0.1 7 , 155 275 10W 250 80 W1 t1 G1 ( E ) -25 W2 200 h1ø 60 100 20 50 , 40±1.2 10 19±1.5 7.5 19±1.5 10+2 1.0 Type A Type B P1 ( E ) G1 2.5


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PDF
BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Text: power dissipation u p to T s= 5 5 ° C (n o te 1 ) - - 500 mW hF E DC current gain lc = 40 mA; VC = 8 V; T, = 25 °C E 60 120 250 fT transition frequency lc = 40 mA; VC = 8 V; f = 1 GHz; E Tamb = 25 °C - 9 GHz g um maximum unilateral power gain lc = 40 mA; VC = 8 V; f = 900 MHz; E Tamb = 25 °C 14 dB F noise figure lc = 10 m A , < SYMBOL - - hF E DC current gain lc = 40 mA; VC = 8 V E 60 120 250 ca


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PDF BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor
TRANSISTOR PEC 545

Abstract: No abstract text available
Text: , lB = 0 VCE= 10 V, lc = 50 mA VCe = 10 V, lc = 75 mA Symbol Min Typ Max Ic e s 100 , 0.493 0.495 0.494 0.491 0.485 0.469 0.459 0.448 0.454 0.491 0.494 0.492 0.488 0.482 0.471 , 0.209 0.234 0.261 0.278 ANG deg -54.5 -67.1 -73.0 -83.3 - 90.1 -96.4 -104.9 -112.3 -117.1 -57.8 -70.6 -77.0 -87.5 -94.3 -100.3 -108.3 -115.3 -119.7 -60.4 -72.8 -79.5 - 90.1 -96.7 , HAY BFR96T Vishay Telefunken Dimensions of BFR96T in mm t e c h n i c a l d r a w in g s a


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PDF BFR96T BFR96T BFR96T_ 20-Jan-99 TRANSISTOR PEC 545
transistor BF 697

Abstract: PJ 1269 transistor equivalent 0107 NA pj 0266 bc1323 transistor c 4236 025-1 Transistor BF 479 2999 npn transistor Bf 966
Text: collector cut-off current | E = 0; VCE = 8 V - - 50 nA hFE DC current gain lc = 40 mA; VCE = 8 V 60 120 250 , function of collector current. MRC007 VC E = V V , 0.000 - 38 FC = 814.7 m Cbe ± Ccb -n- IB' C'O- E ' L3 12 QLe = 50; QLE = 50. Ql-e, e (f) = , 104.0 0.064 51.9 0.346 -57.9 20.6 500 0.488 -141.9 7.190 98.8 0.071 53.2 0.298 -61.0 18.7 600 0.479 , 63.7 0.173 -62.4 11.3 1400 0.484 175.8 2.807 75.2 0.139 65.5 0.157 -67.6 10.2 1600 0.488 171.8 2.499


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PDF 711Dfl2tj 00bT3D5 BFS540 OT323 MBC870 OT323. emitt-172 transistor BF 697 PJ 1269 transistor equivalent 0107 NA pj 0266 bc1323 transistor c 4236 025-1 Transistor BF 479 2999 npn transistor Bf 966
equivalent transistor TT 3043

Abstract: transistor TT 3043 transistor BI 342 905 LT312 k a 431 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ MRC005 BFS540 Transistor BF 479 BTS 308
Text: maximum available gain. 20 Gum (dB) 16 VC E = 3 V V , = 0.000 - 38 FC = 814.7 m Ccb Cbe ± IB1 C'o- E ' I2 L3 QLg = 50; QLe = 50. QL^ (f) = QLg E , 0.064 51.9 0.346 -57.9 20.6 500 0.488 -141.9 7.190 98.8 0.071 53.2 0.298 -61.0 18.7 600 0.479 -149.8 , 0.173 -62.4 11.3 1400 0.484 175.8 2.807 75.2 0.139 65.5 0.157 -67.6 10.2 1600 0.488 171.8 2.499 71.4 0.156 66.0 0.154 -74.4 9.2 1800 0.488 167.4 2.266 68.3 0.171 67.0 0.153 -77.0 8.4 2000 0.496 162.1


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PDF 7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 k a 431 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ MRC005 BFS540 Transistor BF 479 BTS 308
iw 1688

Abstract: 7812 philips transistor BF 697 TRANSISTOR D 1765 738 227 1112 UBC870 BFS540 BFR540 2t6 551 Transistor MJE 5331
Text: emitter capacitance lc = ic = 0; VEB = 0.5 V; f = 1 MHz - 2 - PF Cc collector capacitance | E = | e = 0 , maximum available gain. 20 Gum (dB) 16 vc E = 3 V IV , 104.0 0.064 51.9 0.346 -57.9 20.6 500 0.488 -141.9 7.190 98.8 0.071 53.2 0.298 -61.0 18.7 600 0.479 , 63.7 0.173 -62.4 11.3 1400 0.484 175.8 2.807 75.2 0.139 65.5 0.157 -67.6 10.2 1600 0.488 171.8 2.499 71.4 0.156 66.0 0.154 -74.4 9.2 1800 0.488 167.4 2.266 68.3 0.171 67.0 0.153 -77.0 8.4 2000 0.496


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PDF GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips transistor BF 697 TRANSISTOR D 1765 738 227 1112 UBC870 BFS540 BFR540 2t6 551 Transistor MJE 5331
2008 - GSM repeater circuit using transistor

Abstract: No abstract text available
Text: 19.3 0.431 -87.0 1.3 0.647 -162.4 7.857 64.4 0.027 19.5 0.435 - 90.1 , 21.1 0.488 -108.4 2.5 0.525 147.5 4.403 17.4 0.041 19.9 0.529 -118.8


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PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000, GSM repeater circuit using transistor
2008 - Not Available

Abstract: No abstract text available
Text: 0.435 - 90.1 1.4 0.639 -166.9 7.359 60.0 0.027 19.4 0.443 -93.0 1.5 , 36.3 0.033 21.1 0.488 -108.4 2.5 0.525 147.5 4.403 17.4 0.041 19.9


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PDF RT232 50MHz 33dBm 36dBm 900MHz 14GHz IMT-2000 SP-12 RT232 IMT-2000,
2001 - 5252 F 1108

Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
Text: 0.7 0.8 0.9 0.798 0.745 0.645 0.597 0.558 0.520 0.500 0.488 0.484 -32.2 -59.4 -83.5 , 0.485 0.481 0.484 0.486 0.488 0.489 0.493 0.499 0.503 0.500 -160.8 -166.9 -172.0 -176.2 , 0.7 0.8 0.9 0.643 0.581 0.512 0.488 0.473 0.458 0.453 0.450 0.458 -50.4 -85.7 -111.8 , 0.4 0.5 0.6 0.7 0.8 0.9 0.506 0.499 0.488 0.488 0.491 0.489 0.491 0.492 0.504 -87.1 , -69.3 1.132 1.129 1.124 1.134 1.135 1.135 1.128 1.120 1.119 1.112 9.99 9.69 9.42 9.01


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PDF 2SC5615 S21e2 2SC5615-T3 5252 F 1108 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
2001 - 09 06 248 6834

Abstract: 2SC5616-T3 2SC5616
Text: 0.585 0.513 29.5 21.5 16.5 0.157 0.242 0.354 35.0 49.8 43.5 0.487 0.488 0.513 , 99.8 94.6 90.1 86.5 83.0 0.038 0.061 0.073 0.081 0.088 0.094 0.100 0.106 0.112 67.9 , 0.489 0.489 0.482 0.488 0.489 0.494 0.502 0.505 -82.4 -124.8 -144.9 -156.7 -165.8 -171.9 , 0.207 0.199 0.193 0.189 0.186 0.184 -71.2 -73.7 -75.9 -78.6 -81.2 -84.1 -87.0 - 90.1 , 0.488 0.480 0.478 0.476 -38.7 -72.6 -96.4 -114.8 -128.7 -140.0 -149.3 -156.5 -162.7


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PDF 2SC5616 2SC5616-T3 09 06 248 6834 2SC5616-T3 2SC5616
s8014 transistor

Abstract: No abstract text available
Text: °C (note 1 ) - - 300 mW ^FE DC current gain lc = 20 mA; VC = 6 V; T, = 25 °C E , tT transition frequency l0 = 20 mA; VC = 6 V; f = 1 GHz; E Tamb = 25 °C - 9 - GHz Gum maximum unilateral power gain lc = 20 mA; VC = 6 V; f = 900 MHz; E Tamb = 25 «C 19 - dB lc = 20 rnA; VC = 6 V; f = 2 GHz; E Tamb = 2 5 «C - 13 “ dB I S * ,! * insertion power gain lc = 20 mA; VC = 6 V; f = 900 MHz; E Tamb=25°C 17 18 -


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PDF BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor
2001 - 2SC5616-T3

Abstract: 554-1 2SC5616
Text: 0.487 0.488 0.513 -104.5 -134.2 -171.0 Data Sheet PU10047EJ02V0DS 11 2SC5616 VCE = 1 V , 4.719 4.212 150.5 128.9 115.6 106.6 99.8 94.6 90.1 86.5 83.0 0.038 0.061 0.073 0.081 , 0.7 0.8 0.9 0.541 0.489 0.489 0.482 0.488 0.489 0.494 0.502 0.505 -82.4 -124.8 , -71.2 -73.7 -75.9 -78.6 -81.2 -84.1 -87.0 - 90.1 -93.0 -96.0 2.0 2.1 2.2 2.3 2.4 2.5 , 0.7 0.8 0.9 0.773 0.664 0.587 0.538 0.504 0.488 0.480 0.478 0.476 -38.7 -72.6 -96.4


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2010 - 7039a

Abstract: a1069
Text: 0.544 1200 0.490 -108.6 5.868 102.9 0.088 45.8 0.488 -57.7 -121.9 5.168 95.6 0.093 45.7 0.443 1400 -61.0 0.452 -131.6 4.542 90.1 0.098 , 10.498 111.4 0.056 52.2 0.488 -54.7 800 0.479 -125.3 8.574 100.8 0.063


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PDF EC3H07BA ENA1069 10GHz S21e2 UL94HB) A1069-7/7 7039a a1069
1997 - BFR96

Abstract: BFR96T
Text: 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.454 0.491 0.494 0.492 0.488 , ­67.1 ­73.0 ­83.3 ­ 90.1 ­96.4 ­104.9 ­112.3 ­117.1 ­57.8 ­70.6 ­77.0 ­87.5 ­94.3 ­100.3 ­108.3 ­115.3 ­119.7 ­60.4 ­72.8 ­79.5 ­ 90.1 ­96.7 ­102.5 ­110.3 ­116.9 ­121.3 5 (7


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PDF BFR96T BFR96T D-74025 17-Apr-96 BFR96
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