The Datasheet Archive

Top Results (3)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HMC1082CHIP HMC1082CHIP ECAD Model Analog Devices Inc 5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier
ADL7003CHIPS ADL7003CHIPS ECAD Model Analog Devices Inc 50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Low Noise Amplifier
HMC8410CHIPS-SX HMC8410CHIPS-SX ECAD Model Analog Devices Inc 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

X-band GaAs pHEMT MMIC Chip Datasheets Context Search

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x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , chip area. Further, the assembled yield of MMIC devices is usually higher than discrete assemblies , and reliable GaAs process, taking maximum advantages of equipment and technique proven in the silicon


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , inversely with chip area. Furthermore, the assembled yield of MMIC devices is usually higher than


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2014 - Not Available

Abstract: No abstract text available
Text: 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of , products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed , Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed , can be biased using a direct gate voltage or using an on chip gate bias circuit providing an


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PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/
2009 - Not Available

Abstract: No abstract text available
Text: 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA Chip , pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond pad , ) 0.098 x 0.098 (0.004 x 0.004) 0.105 x 0.180 (0.004 x 0.007) 0.098 x 0.098 (0.004 x 0.004) GaAs MMIC , pF RF IN RF OUT 1000 pF 17 ohm Vg Vg 33 uF GaAs MMIC devices are susceptible to , is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper


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PDF TGA2700 30dBm 10dBm, A/225 300mA TGA2700 30dcern. 0007-inch
2009 - GaAs FET amplifer

Abstract: TGA2700 X-band GaAs pHEMT MMIC Chip
Text: Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA Chip Dimensions: 1.57 x 1.33 , ) 0.105 x 0.180 (0.004 x 0.007) 0.098 x 0.098 (0.004 x 0.004) GaAs MMIC devices are susceptible to , 1000 pF 17 ohm Vg Vg 33 uF GaAs MMIC devices are susceptible to damage from , stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge , designed using TriQuint's proven standard 0.25 um gate pHEMT production process. The TGA2700 provides


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PDF TGA2700 30dBm 10dBm, A/225 300mA TGA2700 0007-inch GaAs FET amplifer X-band GaAs pHEMT MMIC Chip
2014 - Not Available

Abstract: No abstract text available
Text: stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output , millimeter wave products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a , Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of , power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit


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PDF 41dBm MAAP-015030 41drized
2006 - X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Min. Specification , conditionally stable if the input port is open-circuited. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 8.0GHz - 14.0GHz Operating Bandwidth 2.5dB Noise Figure 30dB Small-Signal Gain 19dBm


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PDF FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: efficiency (PAE) from a single chip . Progress in this area, for Ku-band MMIC power amplifiers, has been , high power output and PAE on a single MMIC chip is the high across-the-wafer uniformity of the , surface (carrier) to the top surface (channel) of the MMIC chip is calculated using T = RTH x PDC , yield are almost the same. Reducing the chip area contributes to MMIC cost reduction in two ways: a , model for MSAG processing predicts that reducing the chip area from 40 mm2 to 20 mm2 will improve MMIC


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2006 - x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP , stage. The aggregate MMIC thermal resistivity is approximately 80 C/W. 2 Pad Layout C Pad A B C , (150pF recommended value) should be placed as close to the MMIC as practical. 2The configuration shown


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PDF FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip
2006 - Not Available

Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , Decoupled Input and Output Ports GaAs pHEMT  Low Noise Front End Amplifiers General X-Band Gain , ® Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET Applications InGaP HBT SiGe , output stage. The aggregate MMIC thermal resistivity is approximately 80C/W. 2 Pad Layout Â


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PDF FMA246 FMA246 14GHz. FMA246-000SQ FMA246-000 FMA246-000S3 DS110503
2005 - GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband's 0.5 m GaAs PHEMT device model , 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band , 2005 X=4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power , GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power Amplifier Measurements (cont


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PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V
2005 - P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: on-chip gate bias circuitry. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is , 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band , =4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Power , . ©2008 Mimix Broadband, Inc. Page 2 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 -


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PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
x-Band High Power Amplifier

Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process , backside of the chip is both RF and DC grounded · bond pads and back side are gold plated for , Power versus Frequency Vg Vd3 Main Features 0.25 µm Power pHEMT Technology 6 ­ 18 GHz


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PDF CHA6517 CHA6517 32dBm DSCHA6517-8205 x-Band High Power Amplifier 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet chip 8205 8205 6 pin
2006 - X-band Gan Hemt

Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die , pHEMT Technology Applications Optimum Technology Matching® Applied VD1 GaAs HBT Test Instrumentation Electronic Warfare Communication Infrastructure VD2 GaAs MESFET InGaP HBT SiGe BiCMOS RF IN Si BiCMOS RF OUT SiGe HBT GaAs pHEMT Si CMOS Si BJT VG1 GaN HEMT VG2 , Rev A1 DS090306 FMA3015 Preferred Assembly Instructions GaAs devices are fragile and should be


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PDF FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
2006 - X-band Gan Hemt

Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die , pHEMT Technology Applications Test Instrumentation Electronic Warfare Communication Infrastructure Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Parameter Min. Specification , . 88 x 138 Rev A2 DS090727 FMA3010 Preferred Assembly Instructions GaAs devices are fragile


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PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090727 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
2006 - X-band Gan Hemt

Abstract: MIL-HDBK-263 fma3010
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product , Communication Infrastructure VDD GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS RF IN Si BiCMOS RF OUT SiGe HBT GaAs pHEMT Si CMOS Si BJT VG GaN HEMT InP HBT RF MEMS LDMOS Parameter , is fabricated using RFMD's 0.5µm process. 15dB Gain 5W Saturated Output Power at 9V pHEMT , Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should


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PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090612 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263
2005 - power transistor gaas x-band

Abstract: mmic AMPLIFIER x-band 10w
Text: circuitry. This MMIC uses Mimix Broadband's 0.5 µm GaAs PHEMT device model technology, and is based upon , 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features X-Band 10W , =4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Power , accept their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier


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PDF 05-Jun-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band mmic AMPLIFIER x-band 10w
2005 - power transistor gaas x-band

Abstract: x-band transistor
Text: gate bias circuitry. This MMIC uses Mimix Broadband's 0.5 µm GaAs PHEMT device model technology, and is , 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features X-Band , =4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier , without notice. ©2005 Mimix Broadband, Inc. Page 1 of 6 8.5-11.0 GHz GaAs MMIC Power Amplifier , 2 of 6 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Power


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PDF 30-Sep-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band x-band transistor
2005 - tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: gate bias circuitry. This MMIC uses Mimix Broadband's 0.5 m GaAs PHEMT device model technology, and , 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W , =4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier , to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev , their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier


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PDF 13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
2006 - MMIC X-band amplifier

Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features     ï , Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT , designed for operation in 50 systems. The die is fabricated using RFMD’s 0.3m pHEMT process and is


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PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier
2005 - XP1007

Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
Text: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features X-Band 10W , =4290 General Description Mimix Broadband's two stage 8.7-10.7 GHz GaAs MMIC power amplifier has a small signal , Broadband's 0.5 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure , . 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Power Amplifier Measurements , . 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Mechanical Drawing 0.18 0.48


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PDF 05-May-05 P1007 MIL-STD-883 XP1007 power transistor mimix x-band x-band power transistor power transistor gaas x-band
x-band mmic core chip

Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Text: Semiconductors (UMS) has a considerable heritage in the design and production of MMIC solutions for space and , diagram. CORE CHIP RX OUT DRIVER + HPA chip and a set of high efficiency high power , volume, single recess 0.25 µm gate length pHEMT process is used for the LNA and core chips. Two processes are used for the power amplifiers: a double recess 0.25 µm gate length power pHEMT process offering high power density (850 mW/mm) and high efficiency, and a GaInP/ GaAs HBT process (HB20P) with


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PDF com/28495-74 x-band mmic core chip CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
2004 - 8-12 GHz power amplifier mmic 40 dBm

Abstract: all electrical symbol GaAs FET amplifer chip TGA2700-EPU
Text: 5) ,Q 9G 5) 2XW 9J [ [ [ [ [ [ [ [ GaAs MMIC devices are , Recommended Assembly Diagram 9G S) 5) ,1 5) 287 S) RKP 9J 9J X) GaAs MMIC , stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge , =10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA Chip Dimensions: 1.57 x 1.33 x 0.10 mm (0.062 x 0.052 x 0.004 in) Primary Applications


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PDF TGA2700-EPU 30dBm 10dBm, 300mA TGA2700-EPU 30dBm 0007-inch 8-12 GHz power amplifier mmic 40 dBm all electrical symbol GaAs FET amplifer chip
2006 - RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated , 's 0.3m pHEMT process and is suitable for eutectic attachment. Ordering Information RFHA5966A RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT


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PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
2006 - X-band Gan Hemt

Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Text: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over , Output Ports Applications GaAs MESFET InGaP HBT Low Noise Front End Amplifiers General X-Band Gain Block SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS , open-circuited. Optimum Technology Matching® Applied GaAs HBT 7.0GHz - 11.0GHz Operating Bandwidth 1.1dB


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PDF FMA219 FMA219 FMA219-000 FMA219-000SQ FMA219-000S3 DS090509 X-band Gan Hemt x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
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