The Datasheet Archive

WP90222 datasheet (6)

Part Manufacturer Description Type PDF
WP90222L1 Lucent Technologies Quad 2-Input Positive NAND Gate Scan PDF
WP90222L2 Lucent Technologies Quad 2-Input Positive NOR Gate Scan PDF
WP90222L3 Lucent Technologies Hex Inverter Scan PDF
WP90222L5 Lucent Technologies Quad 2-Input Positive AND Gate Scan PDF
WP90222L6 Lucent Technologies Quad 3-Input Positive NAND Gate Scan PDF
WP90222L6 Lucent Technologies Triple 3-Input Positive NAND Gate Scan PDF

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Not Available

Abstract: No abstract text available
Text: A T & T NELEC (I C) 05 D 005002b OOOOlbO b T -43-15 WA-LS04, WP90222 List 3 Hex Inverter The LS04 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic D IP or surface m ount package. 1 14 V cc T üi t 12 T T T T G RD £ IT f Electrical , D_ 00S0D2L, OOOQlbl a WP90222 List 3, WA-LS04 Timing Characteristics V cc - 5.0 V, TA - 25


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PDF 005002b WA-LS04, WP90222 14-pin B--03
WA-LS10

Abstract: LS10
Text: AT&T ÎIELEC (I C) WA-LS10, WP90222 List 6 aa 005002b OOOOlbb 7 I T-43-15 Quad 3-Input Positive NAND Gate The LS10 Is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. GRD Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = -55 to +125°C (WA-LS) Vcc = , Its Respective Manufacturer AT&T MELEC (I C) SS D ■DD5DQ2b ODQOlb? 1 ■T-43-15 WP90222 List 6


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PDF WA-LS10, WP90222 005002b T-43-15 14-pin 0050G2b WA-LS10 LS10
Not Available

Abstract: No abstract text available
Text: A T & T MELEC (I C) 0GSQD2L, DOGOlbb 7 I T-43-15 02 WA-LS10, WP90222 List 6 Quad 3-Input Positive NAND Gate The LS10 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics V cc = 5.0 ±0.5 V, T a = -5 5 to +125°C (WA-LS) = V cc , – T-43-15 WP90222 List 6, WA-LSIO Timing Characteristics Vcc - 5.0 V, Ta = 25°C, CL = 15 pF


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PDF T-43-15 WA-LS10, WP90222 14-pin
LS08

Abstract: WA-LS08
Text: AT&T flELEC (I C) WA-LS08, WP90222 List 5 02 D OQSOGEb DODOlbE T T-43-15 Quad 2-Input Positive AND Gate The LS08 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. grd Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = -55 to +125°C (WA-LS) Vcc = , Respective Manufactu AT&T MELEC (I C) 02 QQSDQEb 00D01b3_l ■WP90222 List 5, WA-LS08 Timing


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PDF WA-LS08, WP90222 T-43-15 14-pin 0050G2b LS08 WA-LS08
Not Available

Abstract: No abstract text available
Text: I A T & T MELEC (I C) 02 D ■00SGD2b DOOOlSflJS I T-43-15 WA-LS02, WP90222 List 2 Quad 2-Input Positive NOR Gate The LS02 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, TA = -5 5 to , = OOOOIST T ■WP90222 List 2, WA-LS02 T-43-15 Timing Characteristics V cc - 5.0 V, T a - 25Â


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PDF 00SGD2b T-43-15 WA-LS02, WP90222 14-pin
Not Available

Abstract: No abstract text available
Text: A T & T MELEC (IC) 02 D _ 0D,SGG2b QQgpiSb 4 WA-LSOO, WP90222 List 1 Quad 2-Input Positive NAND Gate T he LSOO is a bipolar, N P N , sealed-junction, silicon integrated circuit. It is m anufactured in low-power S chottky technology a n d is available in a wireb onded, 14-pin plastic D IP o r surface m o u n t package. Electrical Characteristics V c c = 5.0 ±0.5 V, T a = -55 to +125°C (WA-LS , WP90222 List 1, WA-LSOO Timing Characteristics V c c = 5.0 V, T a = 25°C, C l = 15 p F WA-LS Param eter


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PDF WP90222 14-pin
Not Available

Abstract: No abstract text available
Text: AT&T MELEC (IC) .02 D 0D,SGG2b GOgpiSb 4 ■T-t/l-Jf WA-LSOO, WP90222 List 1 Quad 2-Input Positive NAND Gate The LSOO is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = -55 to +125°C (WA-LS) VCC = 5.0  , Respective Manufacturer AT&T tIELEC (I C) 02 D ■DOSOOSfcj 00001S7 b ■WP90222 List 1, WA-LSOO Timing


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PDF WP90222 14-pin 0050G2b
WA-LS02

Abstract: LS02
Text: AT&T MELEC (I C) WA-LS02, WP90222 List 2 02 D ■OOSGDSb DOOOlSfla I T-43-15 Quad 2-Input Positive NOR Gate The LS02 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, TA = -55 to +125°C (WA-LS) Vcc = 5.0  , Respective Manufacturer AT&T MELEC (I C) fl5 D 0050021= OOOOIST T ■WP90222 List 2, WA-LS02 Timing


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PDF WA-LS02, WP90222 T-43-15 14-pin 0050G2b WA-LS02 LS02
LS04

Abstract: WA-LS04
Text: AT&T MELEC (I C) WA-LS04, WP90222 List 3 ÖS D ■DOSOOEb OOGGlbO b T-43-15 Hex Inverter The LS04 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. 1 T T T T T GRD IT xy 1 1 1 t 14 S 12 f t Vcc Electrical Characteristics Vcc = 5.0  , – 005002Li OOOOlbl a ■WP90222 List 3, WA-LS04 Timing Characteristics Vcc - 5.0 V, TA - 25°C, CL - 15 pF


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PDF WA-LS04, WP90222 T-43-15 14-pin 0050G2b LS04 WA-LS04
Not Available

Abstract: No abstract text available
Text: a t & t ME LE C (I C) AB OQSGGEb DODOlbE T-43-15 WA-LS08, WP90222 List 5 Quad 2-Input Positive AND Gate The LS08 is a bipolar, N PN, sealed-junction, silicon integrated circuit. It is manufactured in Iow-power Schottky technology and is available in a wirebonded, 14-pin plastic D IP or surface m ount package. Electrical Characteristics V cc = 5.0 ±0.5 V, T a = -5 5 to +125°C (WA-LS) V , €” 8.8 4.8 mA mA T A T & T MELEC (I C) OOSDQEb 00D01b>3_l ■fi2 WP90222 List 5


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PDF T-43-15 WA-LS08, WP90222 14-pin
Not Available

Abstract: No abstract text available
Text: LS02 Quad 2-Input Positive NOR Gate The LS02 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics V cc = 5.0 ±0.5 V, T a = - 5 5 to +125°C (WA-LS) VCC = 5.0 ±0.25 V, T a = 0 to 70°C ( WP90222L2 ) VCC = 5.0 ±0.5 V, Ta = - 4 0 to +85°C , .WA-LS: - 5 5 to +125°C WP90222L2 : 0 to 70°C WA-LSD, WP91397L2: - 4 0 to +85°C


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PDF 14-pin WP90222L2) WP91397L2) WP90222L2: WP91397L2:
LS02

Abstract: WP90222L2
Text: LS02 Quad 2-lnput Positive NOR Gate The LS02 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = -55 to +125°C (WA-LS) vcc = 5.0 ±0.25 v, Ta = 0 to 70°C ( WP90222L2 ) vcc = 5.0 ±0.5 v, Ta = -40 to +85°C (WA-LSD , Operating temperature ( : -55 to +125°C WP90222L2


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PDF 14-pin WP90222L2) WP91397L2) WP90222L2: WP91397L2: LS02 WP90222L2
LS04

Abstract: WP90222L3
Text: LS04 Hex Inverter The LS04 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. E E E E E E 'E 5 £ "14] Vcc n -JÜ -3 -3 Electrical Characteristics vcc = 5.0 +0.5 v, Ta = -55 to +125°c (WA-LS) vcc = 5.0 ±0.25 v, Ta = 0 to 70°C ( WP90222L3 , ).WA-LS: -55 to +125°C WP90222L3 : 0 to 70°C WA-LSD, WP91397L3: -40 to + 85°C Storage temperature (Tstg


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PDF 14-pin WP90222L3) WP91397L3) WP90222L3: WP91397L3: LS04 WP90222L3
WP90222L1

Abstract: No abstract text available
Text: LSOO Quad 2-lnput Positive NAND Gate The LSOO is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = -55 to +125°C (WA-LS) Vcc = 5.0 ±0.25 V, Ta = 0 to 70°C ( WP90222L1 ) VCC = 5.0 ±0.5 V, Ta = -40 to +85°C (WA-LSD , Operating temperature ( : -55 to +125°C WP90222L1


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PDF 14-pin WP90222L1) WP91397L1) WP90222L1: WP91397L1: WP90222L1
LS10

Abstract: WP90222L6 WP91397L6
Text: LS10 Triple 3-lnput Positive NAND Gate The LS10 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics vcc = 5.0 ±0.5 v, Ta = -55 to +125°c (wa-ls) vcc = 5.0 +0.25 v, Ta = 0 to 70°c ( wp90222l6 ) vcc = 5.0 ±0.5 v, Ta = -40 to +85°c (wa-lsd , Operating temperature ( : -55 to +125°C WP90222L6


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PDF 14-pin wp90222l6) wp91397l6) WP90222L6: WP91397L6: LS10 WP90222L6 WP91397L6
Not Available

Abstract: No abstract text available
Text: LS10 Triple 3-Input Positive NAND Gate The LS10 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics VCC = 5.0 ±0.5 V, Ta = -5 5 to +125°C (WA-LS) Vcc = 5.0 +0.25 V, Ta = 0 to 70°C ( WP90222L6 ) VCC = 5.0 ±0.5 V, Ta = -4 0 to +85°C (WA-LSD , ) . 70 V . WA-LS: -5 5 to +125°C WP90222L6 : 0 to 70°C WA-LSD, WP91397L6: -4 0 to


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PDF 14-pin WP90222L6) WP91397L6) WP90222L6: WP91397L6:
LS04

Abstract: WP90222L3
Text: °c ( wp90222l3 ) vcc = 5.0 ±0.5 v, ta = -40 to +85°c (wa-lsd, wp91397l3) WA-LS WP, WA-LSD Parameter , WA-Ls! -55 to +125°C WP90222L3 : 0 to 70°C WA-LSD, WP91397L3: -40 to +85°C Storage temperature (Tstg


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PDF 14-pin wp90222l3) wp91397l3) WP90222L3: WP91397L3: 150oC LS04 WP90222L3
Not Available

Abstract: No abstract text available
Text: LSOO Quad 2-Input Positive NAND Gate The LSOO is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics Vcc = 5.0 ±0.5 V, Ta = - 5 5 to +125°C (WA-LS) V cc = 5.0 ±0.25 V, T a = 0 to 70°C ( WP90222L1 ) VCC = 5.0 ±0.5 V, T a = - 4 0 to +85°C , ) .WA-LS: - 5 5 to +125°C WP90222L1 : 0 to 70°C WA-LSD, WP91397L1: -4 0 to +85°C Storage temperature (Tstg


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PDF 14-pin WP90222L1) WP91397L1) WP90222L1: WP91397L1:
ls08

Abstract: No abstract text available
Text: LS08 Quad 2-Input Positive AND Gate The LS08 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics VCC = 5.0 ±0.5 V, T a = - 5 5 to +125°C (WA-LS) VCC = 5.0 ±0.25 V, Ta = 0 to 70°C ( WP90222L5 ) VCC = 5.0 ±0.5 V, T a = - 4 0 to +85°C , 5 5 to +125°C WP90222L5 : 0 to 70°C WA-LSD, WP91397L5: - 4 0 to +85°C


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PDF 14-pin WP90222L5) WP91397L5) WP90222L5: WP91397L5: ls08
LS10

Abstract: WP90222L6 WP91397L6
Text: LS10 Triple 3-lnput Positive NAND Gate The LS10 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics vcc = 5.0 ±0.5 v, Ta = -55 to +125°c (wa-ls) vcc = 5.0 +0.25 v, Ta = 0 to 70°c ( wp90222l6 ) vcc = 5.0 ±0.5 v, Ta = -40 to +85°c (wa-lsd , Operating temperature ( : -55 to +125°C WP90222L6


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PDF 14-pin wp90222l6) wp91397l6) WP90222L6: WP91397L6: LS10 WP90222L6 WP91397L6
LS08

Abstract: WP91397L5 WP90222L5
Text: LS08 Quad 2-lnput Positive AND Gate The LS08 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics vcc = 5.0 ±0.5 v, Ta = -55 to +125°c (wa-ls) vcc = 5.0 ±0.25 v, Ta = 0 to 70°c ( wp90222l5 ) vcc = 5.0 ±0.5 v, Ta = -40 to +85°c (wa-lsd , +125°C WP90222L5 : 0 to 70°C WA-LSD, WP91397L5: -40 to +85°C Storage temperature (Tstg


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PDF 14-pin wp90222l5) wp91397l5) WP90222L5: WP91397L5: LS08 WP91397L5 WP90222L5
Not Available

Abstract: No abstract text available
Text: LS10 Triple 3-lnput Positive NAND Gate The LS10 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wire-bonded, 14-pin plastic DIP or surface mount package. Electrical Characteristics vcc = 5.0 ±0.5 v, Ta = -55 to +125°c (WA-LS) Vcc = 5.0 +0.25 V, Ta = 0 to 70°C ( WP90222L6 ) Vcc = 5.0 ±0.5 V, Ta = -40 to +85°C (WA-LSD , Operating temperature ( : -55 to +125°C WP90222L6 : 0


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PDF 14-pin WP90222L6) WP91397L6) WP90222L6: WP91397L6:
Supplyframe Tracking Pixel