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WBFBP-03B Datasheets Context Search

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Abstract:
Text: + + + WBFBP-03B Features 0.049(1.25) 0.045(1.15) -PNP Epitaxial Silicon , (0.09) 0.000(0.01) Mechanical data 0.033(0.84)REF. -Case: WBFBP-03B Plastic-Encapsulate Diodes , = Product type marking code Suggested PAD Layout B WBFBP-03B SIZE (mm) (inch) A , Type REEL PACK REEL Reel Size 5,000 7 ( pcs ) WBFBP-03B (inch) REV: A , ) Start 10 pitches (min) Direction of Feed WBFBP - 03B A B C d D D1 T (mm


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PDF TPA2029NND03-HF WBFBP-03B WBFBP-03B QW-JTR06 TPA2029NND03Q-HF TPA2029NND03R-HF TPA2029NND03S-HF
2005 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B RB715Z (1.2×1.2×0.5) unit: mm Schottky barrier diode DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. ANODE 3.CATHODE FEATURES: Extra small power mold type. Low VF High reliability + BACK + + APPLICATION General rectification For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 3D -


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PDF WBFBP-03B WBFBP-03B RB715Z
2007 - diode marking 30

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B DS715NND03 (1.2×1.2×0.5) unit: mm Schottky barrier diode DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. ANODE 3.CATHODE FEATURES: Extra small power mold type. Low VF High reliability + BACK + + APPLICATION General rectification For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 3D - 3D + +


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PDF WBFBP-03B WBFBP-03B DS715NND03 diode marking 30
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors DS54NND03 - WBFBP-03B SCHOTTKY DIODE (1.2×1.2×0.5) unit: mm DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE FEATURES Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Available in Lead Free Version NC - 2. NC 3.CATHODE BACK NC + APPLICATION Ultra high speed switching For


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PDF WBFBP-03B DS54NND03 WBFBP-03B VRRM125 100mA
2007 - Transistor marking BQ

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TPC5658NND03 TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES Excellent hFE linearity Complementary to TPA2029NND03 E C 2. EMITTER 3. COLLECTOR BACK E APPLICATION General Purpose transistor For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) B MARKING: BQ,BR


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PDF WBFBP-03B WBFBP-03B TPC5658NND03 TPA2029NND03 100MHz TPC5658NND03 Transistor marking BQ BQ MARKING marking BQ transistor BQ
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TPC5663NND03 WBFBP-03B TRANSISTOR TOP (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E C 1. BASE FEATURES Collector saturation voltage is low. VCE (sat) ≤250mA At IC =200mA / IB =10mA BACK 2. EMITTER 3. COLLECTOR E B APPLICATION For switching For muting For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note


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PDF WBFBP-03B TPC5663NND03 WBFBP-03B 250mA 200mA 200mA, 100MHz
2007 - transistor ic equivalent book

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114TNND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION PNP Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of


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PDF WBFBP-03B TSA114TNND03 WBFBP-03B -10mA 100MHz transistor ic equivalent book PARAMETER OF DIGITAL IC TSA114TNND03
2005 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B (1.2×1.2×0.5) unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFE linearity. TOP B 1. BASE C 2. EMITTER C 3. COLLECTOR APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3


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PDF WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW 500mA 500mA 30MHz
2007 - transistor equivalent book

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA143ENND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION PNP Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of


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PDF WBFBP-03B TSA143ENND03 WBFBP-03B -100A -10mA/-0 -10mA 100MHz transistor equivalent book transistor ic equivalent book 10VIO TSA143ENND03
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC123JNND03 WBFBP-03B TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Digital Transistor I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) G O 1. IN 2. GND BACK 3. OUT 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative


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PDF WBFBP-03B TSC123JNND03 WBFBP-03B 100MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diodes WBFBP-03B DKN222NND03 (1.2×1.2×0.5) unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES High speed Suitable for high packing density layout High reliability 1 + 3 + 2 APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING


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PDF WBFBP-03B WBFBP-03B DKN222NND03 100mA
2005 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M (1.2×1.2×0.5) unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M E C 2. EMITTER 3. COLLECTOR BACK E APPLICATION Pre-Amplifier, Low Level & Low Noise For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) B MARKING


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PDF WBFBP-03B WBFBP-03B S9014M S9015M
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B (1.2×1.2×0.5) unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 Excellent hFE linearity. TOP B 1. BASE C 2. EMITTER C 3. COLLECTOR APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3


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PDF WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TSC144ENND03 O TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) G O 1. IN 2. GND BACK 3. OUT 2) The bias resistors consist of thin-film resistors with complete isolation to allow egative


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PDF WBFBP-03B TSC144ENND03 WBFBP-03B 10mA/0 100MHz
2007 - transistor equivalent book

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC123JNND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of


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PDF WBFBP-03B TSC123JNND03 WBFBP-03B 100MHz transistor equivalent book transistor e42 marking E42 transistor ic equivalent book
2012 - TPA2029NND03-HF

Abstract:
Text: + + WBFBP-03B Features 0.049(1.25) 0.045(1.15) -PNP Epitaxial Silicon Transistor , ) 0.000(0.01) Mechanical data 0.033(0.84)REF. 0.013(0.32)REF. -Case: WBFBP-03B , = Product type marking code Suggested PAD Layout B WBFBP-03B SIZE (mm) (inch) A , Case Type Reel Size ( pcs ) WBFBP-03B REEL (inch) 5,000 7 REV: A Page 5 , ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 + 0.20 /–0.10 9.50 (MAX) (inch) WBFBP - 03B


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PDF TPA2029NND03-HF WBFBP-03B WBFBP-03B REF315 QW-JTR06 TPA2029NND03Q-HF TPA2029NND03R-HF TPA2029NND03S-HF TPA2029NND03-HF
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction Complementary NPN Type Available (TK3904NND03) Ultra-Small Surface Mount Package Also Available in Lead Free Version E 2. EMITTER 3. COLLECTOR BACK E B APPLICATION General Purpose Amplifier, switching


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PDF WBFBP-03B TK3906NND03 WBFBP-03B TK3904NND03) -50mA -10mA 100MHz -10mA
2005 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B DAN222M (1.2×1.2×0.5) unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.) Suitable for high packing density layout High reliability. + + APPLICATION Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING


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PDF WBFBP-03B WBFBP-03B DAN222M 100mA
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (TK3906NND03) Ultra-Small Surface Mount Package Also Available in Lead Free Version E C 1. BASE 2. EMITTER 3. COLLECTOR BACK E APPLICATION General Purpose Amplifier, switching For portable


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PDF WBFBP-03B TK3904NND03 WBFBP-03B TK3906NND03) Voltag100mA 100MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TPA2030NND03 TRANSISTOR C WBFBP-03B (1.2×1.2×0.5) DESCRIPTION PNP Epitaxial planar Silicon Transistor TOP unit: mm B E C FEATURES Collector current is large. Collector saturation voltage is low. VCE (sat) -250mA At IC =-200mA / IB = -10mA C 1. BASE BACK 2. EMITTER 3. COLLECTOR E B APPLICATION For switching, for muting. For portable equipment:(i.e. Mobile phone


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PDF WBFBP-03B TPA2030NND03 WBFBP-03B -250mA -200mA -10mA -200mA, -10mA,
2007 - transistor equivalent book

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of


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PDF WBFBP-03B TSC144ENND03 WBFBP-03B Transis00 10mA/0 100MHz transistor equivalent book marking 26 transistor ic equivalent book
2005 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor (1.2×1.2×0.5) unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP B C 1. BASE C 2. EMITTER APPLICATION Low Frequency, Low Noise Amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) E 3. COLLECTOR BACK E B


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PDF WBFBP-03B S9015M WBFBP-03B S9014M -10mA 30MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor (1.2×1.2×0.5) unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03 TOP B C 1. BASE C 2. EMITTER APPLICATION Low Frequency, Low Noise Amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) E 3. COLLECTOR BACK E B


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PDF WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 -100mA, -10mA -10mA 30MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TSC143TNND03 WBFBP-03B TRANSISTOR (1.2×1.2×0.5) unit: mm TOP DESCRIPTION NPN Digital Transistor B FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) E C 1. BASE 2. EMITTER 3. COLLECTOR BACK 2) The bias resistors consist of thin-film resistors with complete isolation to allow


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PDF WBFBP-03B TSC143TNND03 WBFBP-03B 100MHz
2007 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TSC143TNND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Digital Transistor TOP B FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the


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PDF WBFBP-03B TSC143TNND03 WBFBP-03B 100MHz
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