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W364M72V-XSBX datasheet (1)

Part Manufacturer Description Type PDF
W364M72V-XSBX White Electronic Designs 64Mx72 Synchronous DRAM Original PDF

W364M72V-XSBX Datasheets Context Search

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2005 - Not Available

Abstract: No abstract text available
Text: Temperature Ranges Organized as 64M x 72 Weight: W364M72V-XSBX - TBD grams typical W364M72V-XSBX , Electronic Designs W364M72V-XSBX 25 32 Area = 800mm2 I/O Count = 219 Balls SAVINGS ­ Area: 66 , a self-timed row precharge that is initiated at the end of the burst sequence. W364M72V-XSBX , CONFIGURATION W364M72V-XSBX PRELIMINARY Top View 1 A B C D E F G H J K L M N P R T DQ1 2 DQ0 , CKE0 CS0# DQML0 CLK CKE CS# DQML W364M72V-XSBX PRELIMINARY A0-12 BA0-1 DQ0 WE# RAS# CAS


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PDF 64Mx72 133MHz W364M72V-XSBX W364M72V-XSBX
2008 - W364M72V-XSBX

Abstract: No abstract text available
Text: White Electronic Designs W364M72V-XSBX 64Mx72 Synchronous DRAM FEATURES BENEFITS High , Commercial, Industrial and Military Temperature Ranges Organized as 64M x 72 Weight: W364M72V-XSBX - TBD , without notice. ACTUAL SIZE White Electronic Designs 25 W364M72V-XSBX 32 Area = 800mm2 , that is initiated at the end of the burst sequence. January 2008 Rev. 3 W364M72V-XSBX 2 , W364M72V-XSBX FIGURE 1 ­ PIN CONFIGURATION Top View 1 3 4 5 6 7 8 9 10 DQ0 A


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PDF W364M72V-XSBX 64Mx72 133MHz W364M72V-XSBX 133MHz
2011 - Not Available

Abstract: No abstract text available
Text: W364M72V-XSBX 64Mx72 Synchronous DRAM FEATURES High Frequency = 100, 125, 133MHz Package: · , Temperature Ranges Organized as 64M x 72 Weight: W364M72V-XSBX - TBD grams typical BENEFITS 66% SPACE , on page 4 This product is subject to change without notice. DENSITY COMPARISONS W364M72V-XSBX 25 W364M72V-XSBX 32 Area = 800mm 2 I/O Count = 219 Balls SAVINGS 11.9 11.9 - Area , W364M72V-XSBX FIGURE 1 ­ PIN CONFIGURATION Top View 1 A B C D E F G H J K L M N P R T DQ1 DQ3 DQ6 DQ7


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PDF W364M72V-XSBX 64Mx72 133MHz W364M72V-XSBX 133MHz
2005 - W364M72V-XSBX

Abstract: No abstract text available
Text: White Electronic Designs W364M72V-XSBX ADVANCED* 64Mx72 Synchronous DRAM FEATURES , : W364M72V-XSBX - TBD grams typical 66% SPACE SAVINGS Reduced part count from 9 to 1 Reduced I/O count · 55 , SIZE White Electronic Designs 25 W364M72V-XSBX 32 Area = 800mm2 I/O Count = 219 Balls , White Electronic Designs W364M72V-XSBX ADVANCED The 4.5Gb SDRAM uses an internal pipelined , Designs Corporation · (602) 437-1520 · www.wedc.com White Electronic Designs W364M72V-XSBX


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PDF W364M72V-XSBX 64Mx72 125MHz W364M72V-XSBX W364M72V-ESSB
JESD22

Abstract: A104 A108 A113 W364M72V-XSBX
Text: White Electronic Designs W364M72V-XSBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects Burn-In ­ 100%-48 hours at 125°C TG = 150°C Final Electrical Test ­ 100% at maximum and minimum ambient temperatures Moisture sensitivity is to JEDEC level 3 Temperature Ranges Available: -55°C to +125°C INTERPOSER MATERIAL -40°C to +85°C CTE = 12-13 ppm / °C 0°C to +70°C Water absorbtion = 0.13


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PDF W364M72V-XSBX Sn63/Pb37 762mm EIA/JESD22 JESD22 A104 A108 A113 W364M72V-XSBX
2010 - W3J2256M72-XPBX

Abstract: W3J128M64G-XPBX W3J128M72G-XPBX DDR1 512M 256mb EEPROM Memory ddr3 sdram chip 128mb w3j128m72 W3H128M72 BGA NAND Flash W72M64VB-XBX
Text: W332M72V-XBX W332M72V-XSBX W364M72V-XSBX Speed (MHz) 100-133 100-133 100-133 100-133 100-133 100-133


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PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX W3J128M72G-XPBX DDR1 512M 256mb EEPROM Memory ddr3 sdram chip 128mb w3j128m72 W3H128M72 BGA NAND Flash W72M64VB-XBX
2010 - ddr sram 256mb

Abstract: w3j128m72 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability W3H128M72E-XSBX DDR2 128M x 32 2.5 pata W364M72V-XSBX WEDPZ512K72V-XBX
Text: W332M72V-XBX W332M72V-XSBX W364M72V-XSBX Speed (MHz) 100-133 100-133 100-133 100-133 100-133 100-133


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PDF W3J256M32G-XNBX W3J128M64G-XNBX W3J128M72G-XNBX W3J2256M16G-XNBX W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX ddr sram 256mb w3j128m72 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability W3H128M72E-XSBX DDR2 128M x 32 2.5 pata W364M72V-XSBX WEDPZ512K72V-XBX
29f040b

Abstract: teradyne catalyst WED3C755E8MC Stacked 4MB Flash and 1MB SRAM FLF14 CERAMIC QUAD FLATPACK CQFP kyocera 128 cqfp 95613 hac 132 WC32P040-XP4M
Text: W364M72V-XSBX 100-133 100-133 100-133 100-133 100-133 100-133 100-133 100-133 100-133 100-133


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PDF DMD2006F 29f040b teradyne catalyst WED3C755E8MC Stacked 4MB Flash and 1MB SRAM FLF14 CERAMIC QUAD FLATPACK CQFP kyocera 128 cqfp 95613 hac 132 WC32P040-XP4M
2013 - LE79Q2281

Abstract: JANSR2N7261 IC ZL70572 GC4600 Dimming LED Driver aplications Dimming LED aplications datasheet transistor SI 6822 BR17 2N2907AUB 2N2369AU
Text: No file text available


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