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    2N5668

    Abstract: 2N5670 2N5669
    Text: n-channel JFETs designed for . • • ■VHF/UHF Amplifiers ■Mixers ■Oscillators * ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V to-92 Source-Gate Voltage.25 V s®" Sec,ion 7 Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage


    OCR Scan     		PDF to-92 2N5668 2N5670 2N5669
    bfj 47

    Abstract: 2N5669 mpf102 equivalent 2N5668-70 2N5670 MPF112 2N5668 MPF102 U1994 BFJ 50
    Text: n-channel JFETs designed for . • • ■VHF/UHF Amplifiers ■Mixers ■Oscillators * ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V to-92 Source-Gate Voltage.25 V s®" Sec,ion 7 Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage Temperature Range.—55 to


    OCR Scan     		PDF to-92 Vqs-16 bfj 47 2N5669 mpf102 equivalent 2N5668-70 2N5670 MPF112 2N5668 MPF102 U1994 BFJ 50
    LT1185MK

    Abstract: No abstract text available
    Text: LT1185MK Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. (A)3.0 Min. Adjustable Output Voltage2.5 Max. Adjustable Output Voltage25 Output Voltage Nominal (V) Drop-Out Volt Max.750m P(D) Max. (W) Nom. Supp (V) Supply Voltage Maximum (V)16 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleTO-3 Mounting StyleT Pinout Equivalence Code4-210 # Pins4 Ckt. (Pinout) NumberLN00400210 DescriptionAccurate Programm.Current Limit


    Original     		PDF LT1185MK Voltage25 Code4-210 NumberLN00400210
    Thyratron

    Abstract: GL393 393a thyratron tube GL393A Gl-393-A GL-393
    Text: type Filament voltage.2.5 volts Filament current, approx , .15 volts Approximate starting characteristics Anode voltage.25 100 500 volts


    OCR Scan     		PDF GL-393-A GL-393-A K-8277054 ETI-132 Thyratron GL393 393a thyratron tube GL393A GL-393
    3c23

    Abstract: GL-3C23 thyratron tube thyratron 3C-23
    Text: Cathode—Filamentary type Filament voltage.2.5 volts Filament current, approx , .16 volts Approximate control characteristics Anode voltage.25 100 500 volts


    OCR Scan     		PDF GL-3C23 GL-3C23 K-9033533 3c23 thyratron tube thyratron 3C-23
    thyratron

    Abstract: thyratron tube technical specifications thyratron tube thyratron tube operation
    Text: .3 Electrical Cathode—Filamentary type Filament voltage.2.5 volts , characteristics Anode voltage.25 100 500 volts Grid voltage


    OCR Scan     		PDF FG-81-A ETI-124 FG-81-A thyratron thyratron tube technical specifications thyratron tube thyratron tube operation
    1D47

    Abstract: SD5501 SD5501N XSD5501 13G46
    Text: Source-Body Voltage.+15 Vdc Pd Vgs Gate-Source Voltage.+25 Vdc Vgb Gate-Body Voltage.+25 Vdc Gate-Body Voltage. -0.3 Vdc Tj Vgd Gate-Drain Voltage.+25 Vdc Ts Id Continuous Drain Current.50 mA Total


    OCR Scan     		PDF SD5501 SD5501 16-pin 443S2 1D47 SD5501N XSD5501 13G46
    J2N5484

    Abstract: 2N5484 2N5485 2N5486
    Text: n-channel JFETs designed for . ■VHF/UHF Amplifiers ■Mixers ■Oscillators ■Analog Switches •ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source Gate Voltage.25 V Drain Current.30 mA Forward Gate Current.10 mA Total Device Dissipation @25°C. 360 mW Derate above 25°C.3.27 mW/°C Operating Junction Temperature Range


    OCR Scan     		PDF 300jHs, J2N5484 2N5484 2N5485 2N5486
    2N3819 equivalent

    Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
    Text: n-channel JFET designed for. . . ■General Purpose Amplifiers ■Analog Switches U Siliconix Performance Curves NRL See Section 5 BENEFITS • Low Cost • Automatic Insertion Package TO-92 See Section 7 ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27


    OCR Scan     		PDF
    mpf102 equivalent

    Abstract: MPF102 2N5668-70 MPF102 mixer U1994 PN4416 2N3966 2N4416-16A 2N5555 J304-5
    Text: n-channel JFET designed for . • • ■VHF/UHF Amplifiers ■Mixers ■Oscillators ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage Temperature Range.—55 to


    OCR Scan     		PDF Vqs-16 mpf102 equivalent MPF102 2N5668-70 MPF102 mixer U1994 PN4416 2N3966 2N4416-16A 2N5555 J304-5
    Thyratron

    Abstract: thyratron tube technical specifications thyratron tube operation thyratron tube FG-178-A
    Text: .3 Electrical Cathode—Filamentary type Filament voltage.2.5 volts , characteristics Anode voltage.25 100 500 volts Grid voltage


    OCR Scan     		PDF FG-178-A FG-178-A K-6917470 ETI-131 Thyratron thyratron tube technical specifications thyratron tube operation thyratron tube
    U1994

    Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416
    Text: n-channel JFET designed for. • ■VHF/UHF Amplifiers ■Mixers ■Oscillators S Siliconix Performance Curves NH See Section 5 BENEFITS • Specified for 200 MHz Operation ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW


    OCR Scan     		PDF Vqs-16 U1994 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416
    2010 - Not Available

    Abstract: No abstract text available
    Text: ˆš(P*R) or Max. operating voltage listed above, whichever is lower. Overload Voltage=2.5 *√(P*R) or , ±15 Operating Voltage=√(P*R) or Max. operating voltage listed above, whichever is lower. Overload Voltage=2.5 , ±50 Operating Voltage=√(P*R) or Max. operating voltage listed above, whichever is lower. Overload Voltage=2.5


    Original     		PDF 1000pcs)
    Siliconix J310

    Abstract: J308 J310 J310 equivalent
    Text: n-channel JFETs designed for . • . ■VHF/UHF Amplifiers ■Oscillators ■Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage Temperature Range.—55 to 150°C Lead Temperature Range (1/16" from case for 10


    OCR Scan     		PDF
    2000 - RK73G2

    Abstract: No abstract text available
    Text: JIS C 52011 Test Methods JIS C 52011 25 25/-55 and 25/125 ×2.55 Rated Voltage×2.5 or Max. overload vol. for 5s whichever less ×2.51 ON/25OFF 10,000 Rated Voltage×2.5 or Max Intermittent overload vol


    Original     		PDF RK73G 50ppm/ 50ppm/ 1000h RK73G2
    2N5668

    Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
    Text: n-channel JFET designed for . • . ■VHF/UHF Amplifiers ■Mixers ■Oscillators ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage Temperature Range.—55 to


    OCR Scan     		PDF Vqs-16 2N5668 mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
    U1994

    Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
    Text: n-channel JFET designed for • •. ■VHF/UHF Amplifiers ■Mixers ■Oscillators ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Source-Gate Voltage.25 V Drain-Source Voltage.25 V Forward Gate Current.10 mA Total Device Dissipation at 25°C Ambient (Derate 3.27 mW/°C).360 mW Operating Temperature Range.—55 to 135°C Storage Temperature Range.—55 to


    OCR Scan     		PDF Vqs-16 U1994 mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
    RN06

    Abstract: 4R70 RN20 resistor 5W 1Ohm RN06B
    Text: . operating voltage listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage , . Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above, whichever is lower. Calchip , listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above


    Original     		PDF 1000pcs) RN06 4R70 RN20 resistor 5W 1Ohm RN06B
    2011 - AR02

    Abstract: No abstract text available
    Text: , whichever is lower. Overload Voltage=2.5 *√(P*R) or Max. overload voltage listed above, whichever is lower , , whichever is lower. Overload Voltage=2.5 *√(P*R) or Max. overload voltage listed above, whichever is lower , ˆš(P*R) or Max. operating voltage listed above, whichever is lower. Overload Voltage=2.5 *√(P*R) or


    Original     		PDF 1000pcs) AR02
    2010 - Not Available

    Abstract: No abstract text available
    Text: voltage listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above , , whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above, whichever is lower , lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above, whichever is lower. Calchip is


    Original     		PDF
    2N3819 equivalent

    Abstract: 2N4223-24 2N5045 2N5045-7 dual jfet vhf 2N3819 2N3819 data 2N3821-4 2N3921-2 2N4084-5
    Text: n-channel JFET designed for . . • ■General Purpose Amplifiers ■Analog Switching S Siliconix Performance Curves MIL See Section 5 BENEFITS • Low Cost • Specified at 100 MHz • Automatic Insertion Package •ABSOLUTE MAXIMUM RATINGS (25°C) Drain-Gate Voltage.25 V Drain-Source Voltage.25 V Reverse Gate-Source Voltage. . .-25 V Gate Current.10 mA Continuous Device Dissipation at (or


    OCR Scan     		PDF
    2010 - Chip Resistor r025

    Abstract: 4r70 0603x4 245 tcr
    Text: listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above , . operating voltage listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage


    Original     		PDF 25PPM/ 0603X4 CNP-34 Chip Resistor r025 4r70 245 tcr
    2010 - Not Available

    Abstract: No abstract text available
    Text: listed above, whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above , , whichever is lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above, whichever is lower , lower. Overload Voltage=2.5 *(P*R) or Max. overload voltage listed above, whichever is lower. Calchip is


    Original     		PDF
    Not Available

    Abstract: No abstract text available
    Text: V39ZA05 Diodes Metal-Oxide Varistor (MOV) V(DC) Nom.(V) Varistor Voltage39 V(RMS) Max. Applied Voltage25 V(DC) Max. Applied Voltage31 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage79 @I(PP) (A) (Test Condition)2.0 W(TM) Max.(J) Transient Energy350m Capacitance Typ. (F)440p t(resp) Max.(s) Response Time Semiconductor MaterialZnO Package StyleRadial Mounting StyleT American Microsemiconductor


    Original     		PDF V39ZA05 Voltage39 Voltage25 Voltage31 Current100 Voltage79 Energy350m
    Not Available

    Abstract: No abstract text available
    Text: 1N4117+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V(Z) Nom.(V) Reference Voltage25 @I(Z) (A) (Test Condition)250u Tolerance (%)5.0ì P(D) Max. (W)250m Z(z) Max. (ê) Dyn. Imped.150 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-204AA Mounting StyleT American Microsemiconductor


    Original     		PDF 1N4117 Voltage25 pp/10k StyleDO-204AA
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