The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
09212403101 HARTING Technology Group HAN 40D-HMC-F-C
09212403001 HARTING Technology Group HAN 40D-HMC-M-C
1657890000 Weidmüller Interface GmbH & Co. KG HDC 40D TSLU 1PG21G RoHS Compliant: Yes
DG441DJ Vishay Siliconix SPST, 4 Func, CMOS, PDIP16,
DG506BEN-T1-GE3 Vishay Siliconix IC MUX ANALOG DUAL 16/8CH 28PLCC
DG405DY Vishay Siliconix DPST, 2 Func, CMOS, PDSO16,

Vishay 40d Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - si7139

Abstract: 40D vishay
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 30 RDS(on) () - 40d · Halogen-free According to IEC 61249-2-21 Definition · TrenchFET® Power MOSFET · 100 , = 25 °C TA = 70 °C Limit - 30 ± 20 - 40d - 22.4a, b - 17.9a, b - 70 - 40d ID , Operating Junction and Storage Temperature Range V 40d IDM Pulsed Drain Current Unit


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 18-Jul-08 si7139 40D vishay
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Abstract: No abstract text available
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 30 RDS(on) (Ω) - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power , TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 40d - 22.4a, b - 17.9a, b - 70 - 40d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - si7139

Abstract: Si7139DP K1 40D
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES ID (A) - 40d - 40d Qg (Typ.) 49.5 nC PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.0055 at VGS = - 10 V 0.0090 at VGS , = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 20 - 40d - 22.4a, b - 17.9a, b - 70 - 40d - 4.5a, b - 30 45 48 30 5.0a, b 3.2a, b - 55 to 150 260 40d Unit V , -2031-Rev. A, 05-Oct-09 www.vishay.com 1 New Product Si7139DP Vishay Siliconix SPECIFICATIONS TJ = 25


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7139 K1 40D
2012 - Not Available

Abstract: No abstract text available
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES ID (A) - 40d - 40d Qg (Typ.) 49.5 nC PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.0055 at VGS = - 10 V 0.0090 at VGS , = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 20 - 40d - 22.4a, b - 17.9a, b - 70 - 40d - 4.5a, b - 30 45 48 30 5.0a, b 3.2a, b - 55 to 150 260 40d Unit V , -2031-Rev. A, 05-Oct-09 www.vishay.com 1 New Product Si7139DP Vishay Siliconix SPECIFICATIONS TJ = 25


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 11-Mar-11
2015 - Not Available

Abstract: No abstract text available
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 30 RDS(on) (Ω) - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power , TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 40d - 22.4a, b - 17.9a, b - 70 - 40d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Not Available

Abstract: No abstract text available
Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 30 RDS(on) (Ω) - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power , TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 40 - 40d - 22.4a, b - 17.9a, b - 70 - 40d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS


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PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2014 - Not Available

Abstract: No abstract text available
Text: World’s Leading Supplier of Infrared (IR) Receivers Vishay is the world’s leading supplier of , (AGC) algorithm can completely suppress all noise and pass data signals. Vishay has developed five , 3.0H x 3.2D (mm) 7.5W x 5.3H x 4.0D (mm) 6.0W x 6.95H x 5.6D (mm) 5.0W x 6.95H x 4.8D , AMERICAS EUROPE UNITED STATES GERMANY VISHAY AMERICAS ONE GREENWICH PLACE SHELTON, CT 06484 UNITED STATES PH: +1-402-563-6866 FAX: +1-402-563-6296 VISHAY ELECTRONIC GMBH


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PDF Mor4-9337-2726 VMN-SG2145-1405
Not Available

Abstract: No abstract text available
Text: Vishay is the world’s leading supplier of infrared (IR) receivers. No other supplier offers a similar , Control 30 kΩ Vishay has developed five different AGC response algorithms based on coding schemes , (mm) 7.5W x 5.3H x 4.0D (mm) 6.0W x 6.95H x 5.6D (mm) 5.0W x 6.95H x 4.8D (mm) 10W x , UNITED STATES GERMANY VISHAY AMERICAS ONE GREENWICH PLACE SHELTON, CT 06484 UNITED STATES PH: +1-402-563-6866 FAX: +1-402-563-6296 VISHAY ELECTRONIC GMBH DR.-FELIX-ZANDMAN-PLATZ 1 95100 SELB GERMANY


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PDF s4-9337-2726 VMN-SG2145-1402
2015 - SE40PB

Abstract: No abstract text available
Text: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD , SE40PJ 40B Device marking code 40D 40G 40J 100 200 400 600 UNIT V (1 , www.vishay.com/doc?91000 SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor , , SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor 4.4 RthJ-M = 6.6 °C/W 4 , www.vishay.com/doc?91000 SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor


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PDF SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. SE40PB
2014 - SE40PB

Abstract: No abstract text available
Text: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD , VRRM SE40PB SE40PD SE40PG SE40PJ 40B Device marking code 40D 40G 40J 100 , , SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C , www.vishay.com/doc?91000 SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor 4.4 , www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO


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PDF SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC SE40PB
2015 - Not Available

Abstract: No abstract text available
Text: • Customer specific design • Possible process flow modification Vishay service â , electrical conductivity between silicon and copper, Vishay wafers are coated on the back side with two or , electrical performance. Vishay experts are happy to advise you on which assembly materials are best suited to your specific requirements. Wire Bonding Vishay does not define absolute bonding parameters , parameters according to their specific equipment. Upon request, Vishay is ready to assist you in optimizing


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PDF VMN-SG2200-1502
process of mosfet

Abstract: Si4724CY Si4768CY Si4770CY W20A RNS 2 china trench power wfet MOSFET Device Effects on Phase Node Ringing
Text: Presented at the 2nd International PCIM Conference Shanghai / China. March 12 -14. 2003 MOSFETs ASM Integrated Circuit - DrMOS Derek Koonce. Jacek Korec. Peter Dang, and Jasper Hou Vishay Siliconix Santa Clara. California. U.S.A. Abstract This paper discusses and demonstrates the performance , Technology To prove out the MOSFET-driver product concept quickly, Vishay Siliconix developed an SO , -1- — 1 1 MLF BWL 1 1 MLFwred TGtG VIH=1 2V. V 2V. I0 m=20, \ DISC 3C0 40D 500


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PDF SI4768CY 500kHz. 300kHz. -500kHz process of mosfet Si4724CY Si4770CY W20A RNS 2 china trench power wfet MOSFET Device Effects on Phase Node Ringing
2015 - Vishay TYPE 40D

Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
Text: infrared emitters, photo detectors, optocouplers, and optical sensors, Vishay Intertechnology offers an , isolation of an optocoupler, or object detection with a reflective or transmissive sensor, Vishay has a , or can be tailored using external lenses to achieve HD resolution. B C Vishay TSHG5210 , TSFF5510 Product Focus For toll collect systems, Vishay introduced the VSMF4720, an 870 nm SMD infrared , the PLCC2 package. In a leaded device, Vishay offers the TSFF5510, which has a viewing angle of Â


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PDF VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707
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Abstract: No abstract text available
Text: DG200B Vishay Siliconix Monolithic Dual SPST CMOS Analog Switch DESCRIPTION The DG200B is a , on-resistance. The DG200B is designed on Vishay Siliconix' improved PLUS-40 CMOS process. An epitaxial layer , -Jun-07 www.vishay.com 1 DG200B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted , , 11-Jun-07 DG200B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V , 425 ns pC pF dB 50 µA www.vishay.com 3 DG200B Vishay Siliconix TYPICAL


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PDF DG200B DG200B PLUS-40 18-Jul-08
Not Available

Abstract: No abstract text available
Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS , Total Quad Unit V A 2 0.8 62.5 ­55 to 150 W _C/W _C 11-1 VQ3001J/P Vishay Siliconix , Document Number: 70221 S-04279-Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS , -Jul-01 www.vishay.com 11-3 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED , -Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output


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PDF VQ3001J/P 18-Jul-08
S7085

Abstract: DG3000
Text: DG3000 Vishay Siliconix Low-Voltage Single SPDT MICRO FOOT®Analog Switch DESCRIPTION The , built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup. Break-before , , Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For MICRO FOOT , XXX DG3000 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted , www.vishay.com 2 Document Number: 71742 S-70853­Rev. F, 30-Apr-07 DG3000 Vishay Siliconix SPECIFICATIONS


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PDF DG3000 DG3000 DG3000. 18-Jul-08 S7085
dg271bdy

Abstract: No abstract text available
Text: DG271B Vishay Siliconix High-Speed Quad Monolithic SPST CMOS Analog Switch D D D D D , on-resistance, low leakage currents, and fast switching speeds. Built on the Vishay Siliconix' proprietary high , committed partner to the community and the environment, Vishay Siliconix manufactures this product with the , DG271B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . , -42137-Rev. B, 15-Nov-04 2 DG271B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 70 rDS


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PDF DG271B DG271B 18-Jul-08 dg271bdy
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Abstract: No abstract text available
Text: Si4890BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , , 06-Apr-09 www.vishay.com 1 New Product Si4890BDY Vishay Siliconix SPECIFICATIONS TJ = 25 , -0540-Rev. B, 06-Apr-09 New Product Si4890BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , -Apr-09 www.vishay.com 3 New Product Si4890BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise , Si4890BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18 14 I D - Drain


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PDF Si4890BDY Si4890BDY-T1-E3 Si4890BDY-T1-GE3 18-Jul-08
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Abstract: No abstract text available
Text: DG200A_MIL Vishay Siliconix Monolithic Dual SPST CMOS Analog Switch FEATURES D D D D "15 V , voltage range coupled with low on-resistance. The DG200A_MIL is designed on Vishay Siliconix' improved , S-02314-Rev. E, 05-Oct-00 www.vishay.com 4-1 DG200A_MIL Vishay Siliconix ORDERING , . www.vishay.com 4-2 Document Number: 70035 S-02314-Rev. E, 05-Oct-00 DG200A_MIL Vishay Siliconix , -Oct-00 www.vishay.com 4-3 DG200A_MIL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs


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PDF DG200A PLUS-40 18-Jul-08
analog 8 msop markings

Abstract: No abstract text available
Text: New Product DG2037/2038/2039 Vishay Siliconix Low-Voltage, Low rON, Dual SPST Analog Switch , /2039 are built on Vishay Siliconix's new high density low voltage process. An epitaxial layer prevents , -71035-Rev. B, 21-May-07 www.vishay.com 1 New Product DG2037/2038/2039 Vishay Siliconix FUNCTIONAL , www.vishay.com 2 Document Number: 72359 S-71035-Rev. B, 21-May-07 New Product DG2037/2038/2039 Vishay , -May-07 www.vishay.com 3 New Product DG2037/2038/2039 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test


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PDF DG2037/2038/2039 DG2037/2038/2039 18-Jul-08 analog 8 msop markings
dg9461dv-t1-e3

Abstract: DG9461DY-T1-E3
Text: DG9461 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION The DG9461 is a , requiring high performance and efficient use of board space. The DG9461 is built on Vishay Siliconix's low , -71009­Rev. C, 14-May-07 www.vishay.com 1 DG9461 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter , Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % , -71009­Rev. C, 14-May-07 www.vishay.com 3 DG9461 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF DG9461 DG9461 BCD-15 DG9461. 18-Jul-08 dg9461dv-t1-e3 DG9461DY-T1-E3
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Abstract: No abstract text available
Text: DG2041/2042/2043 New Product Vishay Siliconix Low-Voltage, Low rON Quad SPST Analog Switch , performance and efficient use of board space. The DG2041/2042/2043 are built on Vishay Siliconix's new high , DG2041/2042/2043 Vishay Siliconix New Product FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONDG2042 , www.vishay.com Document Number: 72091 S-03008-Rev. A, 20-Jan-03 2 DG2041/2042/2043 New Product Vishay , -Jan-03 www.vishay.com 3 DG2041/2042/2043 Vishay Siliconix SPECIFICATIONS (V+ = 2.0 V) Test Conditions


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PDF DG2041/2042/2043 TSSOP-16 QFN-16 DG2041/2042/2043 18-Jul-08
DG303

Abstract: No abstract text available
Text: DG303A_MIL Vishay Siliconix CMOS Analog Switches (Obsolete for non-hermetic. Use DG303B as , minimize error conditions with their low on-resistance. Designed on the Vishay Siliconix PLUS-40 CMOS , /11604BCC www.vishay.com 1 DG303A_MIL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages , -Jan-01 DG303A_MIL Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified Parameter Analog Switch , -Jan-01 www.vishay.com 3 DG303A_MIL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD


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PDF DG303A DG303B 18-Jul-08 DG303
dg2012dl-t1-e3

Abstract: No abstract text available
Text: DG2012 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION The DG2012 is a , high performance and efficient use of board space. The DG2012 is built on Vishay Siliconix's low , -Apr-07 www.vishay.com 1 DG2012 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Referenced V+ to GND IN, COM , Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V , -Apr-07 www.vishay.com 3 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test Conditions Otherwise Unless


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PDF DG2012 DG2012 DG2012. 18-Jul-08 dg2012dl-t1-e3
Not Available

Abstract: No abstract text available
Text: DG381B/384B/387B/390B Vishay Siliconix CMOS Analog Switches FEATURES D D D D BENEFITS , ­ rail to 0 V. Designed on Vishay Siliconix' PLUS-40 CMOS process, these devices achieve low power , -02968-Rev. A, 22-Jan-01 www.vishay.com 1 DG381B/384B/387B/390B Vishay Siliconix FUNCTIONAL BLOCK , Number: 71404 S-02968-Rev. A, 22-Jan-01 DG381B/384B/387B/390B Vishay Siliconix ORDERING , -Jan-01 www.vishay.com 3 DG381B/384B/387B/390B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless


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PDF DG381B/384B/387B/390B DG180 DG381B DG390B 18-Jul-08
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