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Part Manufacturer Description Datasheet Download Buy Part
LT4351IMS Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LT4351CMS#PBF Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LT4351CMS#TR Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LT4351CMS Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LT4351IMS#PBF Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LT4351IMS#TR Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C

Varo Semiconductor diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
varo diode

Abstract: Varo Semiconductor varo MH911 Varo Semiconductor diode High Voltage Multipliers VARO MH911 H467 High Voltage Multipliers VARO MH353
Text: G VARO SEMICONDUCTOR , INC. P.O. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX , number of individual diode packages used in series for the completed, unencapsulated rectifier. Each diode package contains a stack of controlled avalanche chips. In order to achieve the rated voltage and , diodes used, Varo type H463 may be purchased separately. L .56 r I .50 I .38 — , 6.00 T .50 , €ž. „ .,„ v. - (Max.) No. of Individual i PRIC!_N(L Vivn.'i|kV) I") i = so mA Diode Packages 1-99


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PDF MH911* MH919* MH353 varo diode Varo Semiconductor varo MH911 Varo Semiconductor diode High Voltage Multipliers VARO MH911 H467 High Voltage Multipliers VARO MH353
varo diode

Abstract: High Voltage Multipliers VARO varo semiconductor Varo Semiconductor diode P6042 VARO varo tripler HP-214A diode varo vf 30
Text:  VARO ÖUALITY vy VARO SO 1)^1^443333 0000^55 7 - zj^os- VARO SEMICONDUCTOR , INC., P.O. Box 469013 1000 N. Shlioh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 High Voltage Glass , diode series Is not designed to operate In air; possible atmospnerlc corrosion of the lead weld Joint , .0236+»0015 0,6 D .135 Max 3,43 169 VARO DUALITY ~5G c1443333 DGOOISh h IU a B § i- O. H O OC , FIG. 2A 170 01883 Vho Semiconductor • Specfications subfect |p change without notice.


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PDF H1701 HP214A P6042 varo diode High Voltage Multipliers VARO varo semiconductor Varo Semiconductor diode VARO varo tripler HP-214A diode varo vf 30
Varo Semiconductor

Abstract: H1601-10 VARO P6042 varo h1601 H1601-18 H1601-5 t4-m33 VARO VF 12 H1601-2
Text:  VARO ÖUALITY : SD DE 11443333 □□□□ìli 4 VARO SEMICONDUCTOR , INC., P.O. Box 469013 ^^ 1000 N. Shiloh; Garland, Texas 75046-9013 VARO (214) 271-8511 TWX 910-860-5178 High Voltage, Fast , MAXIMUM RATINGS (At TA=25°C unless otherwise noted) VARO Type No. Package Style Repetitive Peak , should be overmolded or operated in oil or a gaseous dielectric to prevent corona or arcing. 155 VARO , FIGURE 2 FORWARD CONDUCTION -25mA -100mA REVERSE RECOVERY CURRENT 156 ei9S3Vm Semiconductor


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PDF H1601 100mA H1601-1 400mA T4M3333 HP214A 160Kn P6042 Varo Semiconductor H1601-10 VARO varo h1601 H1601-18 H1601-5 t4-m33 VARO VF 12 H1601-2
varo semiconductor

Abstract: VARO ci983 VARO VF 25-25 FRM100 VF70
Text:  VARO DUALITY VARO ^50 DET| <=1443333 0000^3^ VARO SEMICONDUCTOR , INC., P.O. Box 469013 1000 N. Shlloh; Garland, Texas 75046-9013 _ (214) 271-8511 TWX 910-860-5178 High Voltage Rectifier H 1756 Series 1*3-05" January 1984 • Glass Passivateci • Epoxy Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery I MAXIMUM RATINGS (At Ta = 25°C unless otherwise , .200 DIA. 5,08 DIA. 183 VARO C3UALITY SO DE J TM4333B □OOOtì4D □ -T^Z'à -OS' ï TYPICAL HIGH


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PDF TM4333B HP214A-KaPU 0-400VDC TEKTROMXPa04Ã varo semiconductor VARO ci983 VARO VF 25-25 FRM100 VF70
varo diode

Abstract: VSK330 VSK320 Varo Semiconductor diode C1983 varo semiconductor rectifier diode 6 amp 400 volt varo capacitor VARO diode VSK330
Text: o VARO T" o VARO SEMICONDUCTOR , INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 3 Amp Schottky Barrier Rectifiers January 1960 20 Volt, 30 Volt , rectifier may be considered for purposes of circuit analysis, as an ideal diode in parallel with a variable capacitance equal in value to the junction capacitance. See Figure 3. C1983 V«ro Semiconductor â , Viro Semiconductor • Specfications subject to change without notice.


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PDF VSK320 VSK330 VSK340 VSK340) varo diode Varo Semiconductor diode C1983 varo semiconductor rectifier diode 6 amp 400 volt varo capacitor VARO diode VSK330
varo semiconductor

Abstract: VARO HB-S Rectifier RGPP10K RGPP10J RGPP10G RGPP10D RGPP10B RGPP10A IR 9443
Text: €”PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz VARO VARO SEMICONDUCTOR , INC. 1000 N. SHI LOH., P. 0. BOX 469013 GARLAND, TEXAS 75046-9013 PHONE: (214)271-8511 TELEX: 163135VARO UT TWX: 910865178 VARO SC , 9443333 VARO QUALITY , Ti"1>E~| 443333 □ □□□'Hb S f T-Ö3-/3 RGPPIO SERIES GLASS PASSIVATED FAST SWITCHING RECTIFIER FEATURES • Glass passivated junction • Low forward voltage â , applied reverse voltage of 4.0 Volts _ 9443333 VARO QUALITY _> 63C 00997 D ~lT~C>'2>^/3 VARO ÖUALITY bB


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PDF MIL-STD-202, DO-41 50/100ns/cm --------60HZ 163135VARO varo semiconductor VARO HB-S Rectifier RGPP10K RGPP10J RGPP10G RGPP10D RGPP10B RGPP10A IR 9443
varo semiconductor

Abstract: RGPP30D VARO RGPP30G RGPP30K RGPP30J IR 9443 RGPP30B RGPP30A RGPP30M
Text: . OÍ O O ■< s o 50 1 5 10 50 REVERSE VOLTAGE, VOLTS 100 VARO VARO SEMICONDUCTOR , INC , 63C 00998 D T-ol-l S" Ti ^1^443333 □□□cma T RGPP30 SERIES GLASS PASSIVATED FAST SWITCHING RECTIFIER 9443333 VARO QUALITY VARO ÖUALITY 0 VARO <3$> FEATURES • Glass passivated , voltage of 4.0 Volts 9443333 VARO QUALITY 63C 00999 D T-O^'/S VARO C2UALITY Ti 1)1^443333 dODOm 0 , TWX: '9108605178 VARO SC GARL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE. 12/84


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PDF RGPP30 MIL-STD-202, DO-201AD 50/100ns/cm 163135VARO varo semiconductor RGPP30D VARO RGPP30G RGPP30K RGPP30J IR 9443 RGPP30B RGPP30A RGPP30M
varo semiconductor

Abstract: h1746 t443 VARO KP314 0T33 VARO VF 25-25 C1963 KP314A
Text:  VARO DUALITY vy VARO SD High Voltage Rectifier H 1746 Series DE J "=1443333 □□□0T33 3 VARO SEMICONDUCTOR , INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 Januaiy1984 • Glass Passivateti • Glass Encapsulated • Platinum Doped • Aluminum , . 177 VARO DUALITY SD DE|T443333 DODOW S TYPICAL HIGH TEMPERATURE LEAKAGE —i , WAVEFORM FORWARD CONDUCTON REVERSE RECOVERY CURRENT FIG. 2B 178 C1963 Wtn Semiconductor Â


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PDF Januaiy1984 T443333 KP314 TEKTHOMXPM42 C1963 varo semiconductor h1746 t443 VARO 0T33 VARO VF 25-25 KP314A
VARO

Abstract: varo semiconductor IR 9443 RGPP60K RGPP60J RGPP60G RGPP60D RGPP60B RGPP60A RGPP60M
Text: CYCLES AT 60 Hz 100 VARO VARO SEMICONDUCTOR , INC. 1000 N. SHILOH., P. 0. BOX 469013 GARLAND, TEXAS 75046-9013 PHONE: (214)271-8511 TELEX: 163135VARO UT TWX:. 9108605178 VARO SC GARL SPECIFICATIONS SUBJECT , 9443333 VARO QUALITY 63C 01000 Î>ËJ 1443333 OOOIDDD 1 _RGPP60 SERIES GLASS PASSIVATED FAST SWITHING RECTIFIER FEATURES • Glass passivated junction • Low forward voltage • High current , 9443333 VARO QUALITY 63C 01001 D 7-03~/7 VARO ÖUALITY RATING AND CHARACTERISTIC CURVES RGPP60-SERIES


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PDF RGPP60 MIL-STD-202, 163135VARO VARO varo semiconductor IR 9443 RGPP60K RGPP60J RGPP60G RGPP60D RGPP60B RGPP60A RGPP60M
varo semiconductor

Abstract: VARO DLS132 PU06E
Text: : VARO DUALITY SO »£.1*^43333 ODOD^S 1 VARO SEMICONDUCTOR , INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271 -8511 TWX 910-860-5178 High Voltage Rectifier H 1747 Series • Glass Passivated • Glass Encapsulated • Platinum Doped • Aluminum Bonded • Uniform , . 179 VARO (2UALITY . -/ac SO DE|c1443333 OOOO^b 1 J . TYPICAL HGH TEMPERATURE LEAKAGE 3 i.< 3  , RECOVERY WAVEFORM FORWARD CONDUCTION 2.0 MA FIG. 2B 180 01963 Viro Semiconductor • Spectlcattons


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PDF c1443333 PU06E 0-400VDC varo semiconductor VARO DLS132
Varo Semiconductor

Abstract: VARO varo semiconductor r C1983 C1983 20 ir 1759 SA 9013 dungs
Text:  VARO DUALITY vy VARO ~ SQ 43333 DODO1^? 0 VARO SEMICONDUCTOR , INC., P.O. Box 469013 ' 1000 N. Shiloh; Garland, Texas 75046-9013 j _(214) 271-8511 TWX 910-860-5178 ! High Voltage Rectifier H 1759 • Glass Passivated • Epoxy Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted) Repetitive Peak Reverse Voltage , ,4 MIN. D .200 DIA. 5,08 DIA. 181 VARO C3UALITY "SD 1^1^443333 □ ODD'ìBfl 5 '~r-23-0S I


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PDF r-23-0S C1983 Varo Semiconductor VARO varo semiconductor r C1983 20 ir 1759 SA 9013 dungs
varo semiconductor

Abstract: VARO
Text:  VARO DUALITY vy VARO _SD DF|cm43333 0G00T31 VARO SEMICONDUCTOR , INC., P.O. Box 469013 1Ó00 N. Shiloh; Garland, Texas 75046-9013 (214)271-8511 TWX 910-860-5178 High Voltage Rectifier H 1749 Series : 23 -03 January 1964 • Glass Passivated • Glass Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted , MAX. 3,43 MAX. 175 VARO DUALITY 50 DEI ^>43333 ODOD'ìSS 1 TYPICAL HIGH TEMPERATURE LEAKAGE 5


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PDF cm43333 0G00T31 WS14A KTROMXM042 varo semiconductor VARO
Varo R711

Abstract: R712 R714X Varo R712X R711X varo semiconductor VARO R711 varo R712 R712X
Text: G VARO SEMICONDUCTOR , INC. PO. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 30AMP CENTER TAPPED SILICON INTEGRATED RECTIFIER TO-3 CASE ■Controlled Avalanche series: 250V, 450V & 650V min. avalanche ratings 0V) ■Non-controlled avalanche series: 100V, 200V, 400V , -3 dimensions and notes are applicable. Varo Part Peak Rep. Reverse Voltage Avalanche Voltage (Vea) Peak Surge , ) VARO PART NO.' PRV (Oper.) (1) | | I DC Fwd. 1 Peak Surg« ; Peak Surge 1 Current Current, 1 Currant


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PDF 30AMP Varo R711 R712 R714X Varo R712X R711X varo semiconductor VARO R711 varo R712 R712X
Varo Semiconductor diode

Abstract: No abstract text available
Text: J roaueti, Dnc. J. c/ TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MUR1630CT Ultrafast Recovery Rectifier FEATURES • Ultrafast Recovery Time • LOW ron/ varo vouage • Low Leakage Current 4 •» • 175 , IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) Per Diode Leg 16 A C , Recovery Time IF= 0.5A, IR= 1A, lrr= 0.25A 60 ns New Jersey Semiconductor


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PDF MUR1630CT TQ-22QC Varo Semiconductor diode
varo semiconductor

Abstract: 1N4441 IN4441 VARO VG20 VG1X VG2X IN444 m55302/131-01 VB25 Varo VG12X
Text: G VARO SEMICONDUCTOR , INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 VOLTAGE DIFFUSED SILICON RECTIFIERS Varo high voltage and high voltage fast recovery time diffused silicon rectifiers are designed for industrial and commercial applications that require high reliability at an economical cost. These rectifiers offer high voltage ranges in minimum-sized, epoxy-encapsulated packages with low leakage current. All ratings are obtained without the use of special heat sinks


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PDF VG10X VG12X VG15X VG20X lDLS-027 DLS-034 varo semiconductor 1N4441 IN4441 VARO VG20 VG1X VG2X IN444 m55302/131-01 VB25 Varo VG12X
VS648

Abstract: vs447 VS847 Varo Semiconductor VS247 varo VS247 VJ148 VS647 Vj248 varo VS247 VS148
Text: G VARO SEMICONDUCTOR , INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS ■Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche voltage8 (Vbr) ■Non-controlled Avalanche series with 50V, 100V, 200V, 400V, 600V and 800V (VRRM) ■Fast recovery series with 200 nanosec. reverse recovery (trr). The EBR bridge rectifiers , VARO VARO SEMICONDUCTOR , INC. PO BOX 676. 1000 N. SHILOH, GARLAND, TE:X. 75040 (214)272-4551 TWX


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PDF ReJ447 DLS-042 VJ647 VJ847 VJ048 VJ148 VS648 vs447 VS847 Varo Semiconductor VS247 varo VS247 VJ148 VS647 Vj248 varo VS247 VS148
31DF4 7

Abstract: 31df61f 31DF4 marking code IAM varo semiconductor 31DF6
Text: E TAIWAN SEMICONDUCTOR ©RoHS compliance 31DF4 - 31DF6 3.0 AMPS. Super Fast Rectifiers DQ-2Q1AD I -SSI- Features ❖ High affidancy. Low VF -t- High current capability High reliability <> Hig h 5 u rge current ca pabi lily '> Low power loss. •<> Graen comfxxjno with suffix 'G" cn pacing , . Reverse recovery Tost Condition: Ta = 251-, IFM=3A. dl/dt = 50A / Us. Version: BO6 TAIWAN SEMICONDUCTOR , ili 75 1CA US isn F4mrkrFTWJUR?./C) fic.3- maximum non-repetitive for1, varo KIJRÌSE CURRENT


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PDF 31DF4 31DF6 MlL-STD-202. 26CTC/10 0ECILjCa03 31DF6) 31DF4 7 31df61f marking code IAM varo semiconductor 31DF6
2002 - HSN-1000

Abstract: HSN-3000 Westinghouse diode westinghouse 12 eldec star tracker varo diode HSN-500
Text: 10 k Detector (Pin Diode ) 2 NED Amplifier Pulse Timer 10 k Logic Latch BIT 6 , -1000/500 Block Diagram V B 8 Threshold Adjust 9 V H 14 V L 1 10 k Detector (Pin Diode , Electrical Specs Parameter Hardened Supply Voltage Load Voltage PIN Diode Bias Voltage - Standby 1 PIN Diode Bias Current - Standby 1 Built-in-Test (BIT) 4,5 Pin # 14 1 8 8 6 Symbol VH VL VB IB VIH , Sunstrand Varo Westinghouse Whitaker NED Program List · A12 · B2 · EFA · EKV · GPS IIR · JSTARS ·


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PDF HSN-3000 HSN-1000 HSN-2000 HSN-500 HSN-3000/2000 HSN-1000 HSN-3000 Westinghouse diode westinghouse 12 eldec star tracker varo diode HSN-500
Varo R711

Abstract: R711A R711 MR4422CTR Motorola Case 1-06 MR4422CT
Text: Order this document by MR4422CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA I I MR4422CT MR4422CTR Advance Information Complementary Medium Current Silicon Rectifiers For Linear Power Supply Applications . . using monolithic silicon technology for perfect matching of diodes in center tap configuration. These state-of-the-art devices have the following features: q q q q q Low Forward , Temperature Direct Replacement for Varo R711 and R711 A CASE 1-06 (TO-204AA) METAL RATINGS (PER LEG


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PDF MR4422CT/D MR4422CT MR4422CTR O-204AA) MK145BP, Varo R711 R711A R711 MR4422CTR Motorola Case 1-06 MR4422CT
diode 5.1B3

Abstract: 74LVT16245DL sq 1b4 1 74LVT 74LVT16245 74LVT16245DGG LVT16245 51B3 Varo Semiconductor diode
Text: PHILIPS INTERNATIONAL Philips Semiconductor * Low Voilage Products bSE ]> m 7iiafl2b DObi1^ S3Q Objective specification 3.3V ABT 16—bit transceiver with 3-state outputs 74LVT16245 FEATURES • 16-bit bidirectional bus interface • 3-State buffers • Output capability: +64mA/-32mA • TTL input and output , IK DC Input diode current V|<0 -50 mA Vi DC Input voltage3 -0.5 to+7.0 V k>k DC output diode , pin2 Vcc = 3V to 3.6V; One input at V«rO -6V, Other inputs at Vcc or GND 0.2 mA ipu/pd Power up


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PDF 74LVT16245 16-bit 64mA/-32mA 500mA 74LVT 10MHz 500ns diode 5.1B3 74LVT16245DL sq 1b4 1 74LVT16245 74LVT16245DGG LVT16245 51B3 Varo Semiconductor diode
varo vf25-25x

Abstract: VF25-30X varo vf25-10x varo vf10 VF25-25 VF25-25X VF5-20X VF5-15 VARO VF 15X VARO
Text: HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS SERIES VF D - C —[— A —I i\ -r EPOXY BODY B SILVER OR SILVER PLATED WIRES VARO Type No. Average Forward Current, @ Ta = 40°C, !o Peak Repetitive Reverse Voltage, V*rm (Volts) sîâî: Vfm (Volts) Case Style 5mA 10mA 25mA VF5- 5 VF 10- 5 VF25- 5 5,000 12 A VF5- 7 VF 10- 7 VF25- 7 7,000 12 A VF5-10 VFIO-IO VF25-10 10,000 18 A VF5-12 VF10-12 VF25-12 12,000 18 A VF5-15 VF10-15 VF25-15 15,000 35 B VF5-20 VF 10-20 VF25-20 20,000 35 B VF5


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PDF VF5-10 VF25-10 VF5-12 VF10-12 VF25-12 VF5-15 VF10-15 VF25-15 VF5-20 VF25-20 varo vf25-25x VF25-30X varo vf25-10x varo vf10 VF25-25 VF25-25X VF5-20X VARO VF 15X VARO
VARO VC80

Abstract: varo h441 varo h440 VC40X varo vf25-25x varo semiconductor varo vf25-10x vc-404 VC80X h441
Text: G VARO SEMICONDUCTOR , INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS SERIES VC • VF \ T~ EPOXY BODY B SILVER OR SILVER PLATED WIRES TERMINALS ARE .032" THICK BY .25" WIDE -J i-o.i! SERIES VC Part No. Peak Rep. Reverse Voltate (Vrrm) (Volts) ■Avg. Fwd. Currentlo @ 40°C (Amps) Max. Fwd. Voltage Drop @ 25°C & lo Vfm (Volts) PRICING 1-9E 100-99* VC20 2,000 2 4 $5.20 $4.00 VC30 3,000 2 4 5.52 4.25 VC40 4,000 2


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PDF VC20X VC30X VC40X VC50X VF10-15X VF10-20X VF10-25X VF10-30X VF10-40X VF25-5 VARO VC80 varo h441 varo h440 varo vf25-25x varo semiconductor varo vf25-10x vc-404 VC80X h441
1995 - MB346

Abstract: L298N l298n motor controller dc motor l298n V331X deutsch relays inc LM18298 l 9302 C1995 Deutsch Relays
Text: Typical devices are the MB346 (Microsemi Corp Santa Ana CA) and the V331X ( Varo Semiconductor Inc , National Semiconductor Corporation TL H 9302 RRD-B30M115 Printed in U S A LM18298 Dual Full-Bridge , Aerospace specified devices are required please contact the National Semiconductor Sales Office , PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are , Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018


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PDF LM18298 MB346 L298N l298n motor controller dc motor l298n V331X deutsch relays inc l 9302 C1995 Deutsch Relays
B10K

Abstract: solitron J775 Semtech SCBA Solitron J775-2 250JB1L KBH2502 MDA990-3 MDA990-1 SCBA-6 Rectifier MDA990-2
Text: _U _ -.093 Ol A ^ W HOLES TU, TUNGSOL VARO 50 MDA990-1 SCBA05 B10Z 50 100 MDA990-2 SCBA-1 B1


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PDF KBH25005 KBH2502 KBH2504 KBH2506 KBH2508 KBH2510 KBH25CI05 250JB05L 775-CI B10K solitron J775 Semtech SCBA Solitron J775-2 250JB1L MDA990-3 MDA990-1 SCBA-6 Rectifier MDA990-2
VARO

Abstract: Scans-0017250
Text: 2; siehe Seite 2 8.6.1954 939 0341 1. 1053 PHILIPS Typical characteristics Varo = 9 V CaractÃ


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