The Datasheet Archive

VSO05561 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - diode T3 Marking

Abstract: diode MARKING A1 VSO05561
Text: BBY53-05W Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 3 for VCO's in mobile communications equipment High ratio at low reverse voltage C1/C2 3 2 1 VSO05561 1 A1 2 A2 EHA07179 Type BBY53-05W Marking S7s Pin Configuration 1 = A1 2 = A2 3=C1/2 Package SOT323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 6 20 -55 . 150 -55 .


Original
PDF BBY53-05W VSO05561 EHA07179 OT323 Feb-28-2002 diode T3 Marking diode MARKING A1 VSO05561
1999 - VSO05561

Abstract: No abstract text available
Text: BBY 53-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment · High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating


Original
PDF 3-05W VSO05561 EHA07179 OT-323 Oct-05-1999 VSO05561
2000 - Not Available

Abstract: No abstract text available
Text: BBY 53-05W Silicon Tuning Diode 3 High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage 2    1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating


Original
PDF 3-05W VSO05561 EHA07179 OT-323 Dec-07-2000
1999 - Not Available

Abstract: No abstract text available
Text: BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · Designed for low tuning voltage operation for VCO's in mobile communications equipment · For low frequency control elements such as TCXOs and VCXOs · Very low capacitance spread BBY 58-04W BBY 58-05W BBY 58-06W 3 2 1 VSO05561 Type BBY 58-04W BBY 58-05W BBY 58-06W Marking Ordering Code B4 B5 B6 Q62702Q62702Q62702- Pin Configuration 1 = A1 1 = A1 1 = C1 2


Original
PDF 8-04W 8-06W 8-04W 8-05W VSO05561 Q62702Q62702Q62702-
2002 - Not Available

Abstract: No abstract text available
Text: BBY53-05W 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment High ratio at low reverse voltage 1 VSO05561    C1/C2 3 1 2 A1 A2 EHA07179 Type BBY53-05W Marking S7s Pin Configuration 1 = A1 2 = A2 3=C1/2 Maximum Ratings Parameter Diode reverse voltage Symbol VR Forward current IF Operating temperature range Storage temperature Package


Original
PDF BBY53-05W VSO05561 EHA07179 OT323 Feb-28-2002
2001 - BBY53-05W

Abstract: VSO05561
Text: BBY53-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment · High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating


Original
PDF BBY53-05W VSO05561 EHA07179 OT323 Jul-02-2001 BBY53-05W VSO05561
1999 - VSO05561

Abstract: No abstract text available
Text: BBY 52-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range Top -55 . 150 °C Storage


Original
PDF 2-05W VSO05561 EHA07179 OT-323 May-20-1999 VSO05561
1999 - VSO05561

Abstract: MARKING 1t SOT- 323
Text: BF 771W NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771W RBs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2


Original
PDF VSO05561 OT-323 Oct-26-1999 VSO05561 MARKING 1t SOT- 323
2001 - UHF diode

Abstract: c2 sot323 BAT17-04W BAT17-05W BAT17-06W VSO05561 bat17
Text: BAT17-04W.BAT17-06W Silicon Schottky Diodes 3 For mixer applications in the VHF / UHF range For high-speed switching applications 2 1 BAT17-04W BAT17-05W BAT17-06W 3 3 VSO05561 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAT17-04W 54s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAT17-05W 55s 1 = A1 2 = A2 3 = C1/2 SOT323 BAT17-06W 56s 3 = C1 2 = C2 3


Original
PDF BAT17-04W. BAT17-06W BAT17-04W BAT17-05W VSO05561 EHA07005 EHA07006 EHA07004 UHF diode c2 sot323 BAT17-04W BAT17-05W BAT17-06W VSO05561 bat17
2001 - VSO05561

Abstract: BBY52-05W
Text: BBY52-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range Top -55 . 150 °C Storage


Original
PDF BBY52-05W VSO05561 EHA07179 OT323 Jul-02-2001 VSO05561 BBY52-05W
1999 - DIODE T4 A1

Abstract: diode marking T4
Text: BBY 52-05W Silicon Tuning Diode Preliminary data · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 3 2 1 C1/C2 3 VSO05561 1 A1 2 A2 EHA07179 Type BBY 52-05W Marking Ordering Code S2s upon request Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 . 150 -55 . 150


Original
PDF 2-05W VSO05561 EHA07179 OT-323 DIODE T4 A1 diode marking T4
1998 - smd ct3

Abstract: marking code AC sot 323 diode smd marking CT3
Text: BBY 53-05W Silicon Tuning Diode · For 2-Band-hyperband-TV-tuners · High capacitance ratio · Low series inductance · Low series resistance · Extremely small plastic SMD package · Excellent uniformity and matching due to "in-line" matching assembly procedure 3 2 1 VSO05561 Type BBY 53-05W Maximum Ratings Parameter Marking Ordering Code S7s Q62702- Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Symbol Value 6 20 -55 .+150 -55 .+150 Unit V mA °C Diode reverse


Original
PDF 3-05W VSO05561 3-05W Q62702- OT-323 Sep-24-1998 smd ct3 marking code AC sot 323 diode smd marking CT3
2001 - BAT15-05W

Abstract: VSO05561 noise diode
Text: BAT15-05W Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type 3 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W S5s Pin Configuration 1=A1 2=A2 Package 3=C1/C1 SOT323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 4 Forward current IF 110


Original
PDF BAT15-05W VSO05561 5-05W EHA07179 OT323 Jul-06-2001 EHD07079 EHD07081 BAT15-05W VSO05561 noise diode
2001 - Not Available

Abstract: No abstract text available
Text: BBY 58-04W . BBY 58-06W 3 Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VSO05561 For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread       BBY 58-04W BBY 58-05W 3 BBY 58-06W 3 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin


Original
PDF 8-04W 8-06W VSO05561 8-05W EHA07005 EHA07006 EHA07004
1999 - A2 diode

Abstract: marking c2 diode VSO05561
Text: BBY 57-05W Silicon Tuning Diode 3 · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · High capacitance ratio 2 · Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 · For control elements such as TCXOs and VCXOs VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 57-05W D6s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings Parameter


Original
PDF 7-05W VSO05561 EHA07179 OT-323 May-20-1999 A2 diode marking c2 diode VSO05561
2001 - BAS40-04W

Abstract: BAS40-05W BAS40-06W VSO05561
Text: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS40-04W 2 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 2 1 2 EHA07006 EHA07004 EHA07005 VSO05561 Type Marking Pin Configuration Package BAS40-04W 44s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAS40-05W 45s 1 = A1 2 = A2 3 = C1/C2 SOT323 BAS40


Original
PDF BAS40-04W. BAS40-06W BAS40-04W BAS40-05W EHA07006 EHA07004 EHA07005 VSO05561 BAS40-04W BAS40-05W BAS40-06W VSO05561
2001 - BAT68-04W

Abstract: BAT68-05W BAT68-06W BAT68W VSO05561
Text: BAT68W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT68W 84s 1 = A1 2 =C2 3 = C1/A2 SOT323 BAT68-04W 85s 1 =


Original
PDF BAT68W BAT68-05W BAT68-04W EHA07005 EHA07002 BAT68-06W VSO05561 EHA07006 EHA07004 BAT68-04W BAT68-05W BAT68-06W BAT68W VSO05561
2001 - BCR135W

Abstract: VSO05561
Text: BCR135W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=10k , R 2=47k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR135W WJs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6


Original
PDF BCR135W VSO05561 EHA07184 OT323 Nov-29-2001 BCR135W VSO05561
2001 - BCR166W

Abstract: VSO05561
Text: BCR166W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=4.7k , R2=47k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5


Original
PDF BCR166W VSO05561 EHA07183 OT323 Nov-29-2001 BCR166W VSO05561
2001 - BCR183W

Abstract: VSO05561
Text: BCR183W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k , R2 =10k ) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR183W WMs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10


Original
PDF BCR183W VSO05561 EHA07183 OT323 Dec-13-2001 BCR183W VSO05561
1999 - VSO05561

Abstract: No abstract text available
Text: BCR 196W PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=47k, R 2=22k) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 196W WXs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10


Original
PDF VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561
1999 - A2 diode

Abstract: BBY 10 DIODE MARKING B4 VSO05561
Text: BBY 58-04W . BBY 58-06W Silicon Tunig Diodes 3 · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment · For low frequency control elements 1 such as TCXOs and VCXOs VSO05561 · Very low capacitance spread BBY 58-05W BBY 58-06W 3 BBY 58-04W 3 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Configuration


Original
PDF 8-04W 8-06W VSO05561 8-05W EHA07005 EHA07006 EHA07004 A2 diode BBY 10 DIODE MARKING B4 VSO05561
2001 - RBS 200

Abstract: BF771W VSO05561
Text: BF771W NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF771W RBs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2


Original
PDF BF771W VSO05561 OT323 Jun-27-2001 RBS 200 BF771W VSO05561
1999 - RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: VSO05561 MARKING 1t SOT- 323
Text: BF 775W NPN Silicon RF Transistor 3 Especially suitable for TV-sat and UHF tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775W LOs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30


Original
PDF VSO05561 OT-323 Oct-26-1999 RF NPN POWER TRANSISTOR 2.5 GHZ VSO05561 MARKING 1t SOT- 323
1999 - VSO05561

Abstract: No abstract text available
Text: BAS 40W. Silicon Schottky Diode 3 · General-purpose diode for high-speed switching · Circuit protection · Voltage clamping · High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 VSO05561 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAS 40-04W 44s 1 = A1 2 = C2 3=C1/A2 SOT-323 BAS 40-05W 45s 1 = A1 2 = A2 3=C1/C2 SOT-323 BAS 40-06W 46s 1 = C1


Original
PDF 0-04W 0-05W 0-06W VSO05561 EHA07005 EHA07006 EHA07004 OT-323 VSO05561
Previous1 2 3 ... 7 8 9 Next
Supplyframe Tracking Pixel