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2001 - VPS05163

Abstract: BAT70-05
Text: BAT70-05 Silicon Schottky Diode 4 Parallel connection for maximum I F per package Low forward voltage drop For power supply For clamping and protection 3 2 1 VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT70-05 Marking BAT70-05 Pin Configuration Package 1=A1 | 2=C1/2 | 3=A2 | 4=C1/2 SOT223 Maximum Ratings Parameter Symbol Diode reverse voltage VR TS


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PDF BAT70-05 VPS05163 EHA00005 OT223 50/60Hz, Jun-22-2001 100ms, VPS05163 BAT70-05
1998 - VPS05163

Abstract: Q62702-A1223
Text: BAT 70-05 Silicon Schottky Diodes · Parallel connection for maximum IF per package 4 · Low forward voltage drop · For power supply 3 · For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Ratings Parameter Symbol Reverse voltage, TS < 75°C 1) VR 50 Reverse voltage, TS


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PDF VPS05163 Q62702-A1223 OT-223 50/60Hz, 100ms, 100ms Jun-02-1998 VPS05163 Q62702-A1223
Not Available

Abstract: No abstract text available
Text: SIEMENS BAT 70-05 Silicon Schottky Diodes • Parallel connection for maximum /F \ 4 per package i • Low forward voltage drop CO • For power supply • For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Raltmgs-Parameter


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PDF VPS05163 Q62702-A1223 OT-223 50/60Hz, 100ms,
2001 - VPS05163

Abstract: bat66 BAT66-05
Text: BAT66-05 Silicon Schottky Diode Low-power Schottky rectifier diode For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT66-05 BAT 66-05 Pin Configuration 1 = A1 2=C1/C2 3 = A2 Package 4=C1/C2 SOT223 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 2 A Average forward current (50/60Hz, sinus


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PDF BAT66-05 VPS05163 EHA00005 OT223 50/60Hz, EHB00062 EHB00063 Jul-27-2001 VPS05163 bat66 BAT66-05
1999 - c3 SOT-223

Abstract: VPS05163 7005 p10ms
Text: BAT 70-05 Silicon Schottky Diodes · Parallel connection for maximum I F per package 4 · Low forward voltage drop · For power supply 3 · For clamping and protection 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 70-05 BAT 70-05 Pin Configuration 1=A1 2=C1/C3 3=A2 Package 4=C1/C3 SOT-223 Maximum Ratings Parameter Symbol Reverse voltage, TS < 75°C 1) VR 50 Reverse voltage, TS < 50°C 1


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PDF VPS05163 OT-223 50/60Hz, 100ms, 100ms Oct-11-1999 c3 SOT-223 VPS05163 7005 p10ms
Q62702-Z2037

Abstract: VPS05163
Text: PZTA 92 PNP Silicon High Voltage Transistor · High breakdown voltage 4 · Low collector-emitter saturation voltage · Complementary type: PZTA 42 (NPN) 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 92 PZTA 92 Q62702-Z2037 1=B 2=C VPS05163 Package 3=E 4=C SOT-223 Value Unit Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC


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PDF Q62702-Z2037 VPS05163 OT-223 Jan-22-1999 100MHz Q62702-Z2037 VPS05163
2001 - diode 78a

Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
Text: BAS78A.BAS78D Silicon Switching Diodes Switching applications High breakdown voltage 4 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C BAS 78C 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78D BAS 78D 1=A 2=C 3 = n.c. 4 = C SOT223 Maximum Ratings Symbol Parameter BAS


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PDF BAS78A. BAS78D VPS05163 EHA00004 BAS78A OT223 BAS78B BAS78C diode 78a tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
1999 - VPS05163

Abstract: Schottky Diode SOT-223 6605
Text: BAT 66-05 Silicon Schottky Diode · Low-power Schottky rectifier diode · For low-loss, fast-recovery rectification, 4 meter protection, bias isolation and clamping purpose 3 2 1 VPS05163 2, 4 1 3 EHA00005 Type Marking BAT 66-05 BAT 66-05 Pin Configuration 1 = A1 2=C1/C2 3 = A2 Package 4=C1/C2 SOT-223 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 V Forward current IF 2 A Average forward current (50/60Hz


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PDF VPS05163 EHA00005 OT-223 50/60Hz, EHB00062 EHB00063 Oct-07-1999 EHB00155 VPS05163 Schottky Diode SOT-223 6605
Q62702-Z2035

Abstract: VPS05163
Text: PZTA 42 NPN Silicon High Voltage Transistor · High breakdown voltage 4 · Low collector-emitter saturation voltage · Complementary type: PZTA 92 (PNP) 3 2 1 Type Marking Ordering Code Pin Configuration PZTA 42 PZTA 42 Q62702-Z2035 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Value Unit Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC


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PDF Q62702-Z2035 VPS05163 OT-223 Jan-21-1999 100MHz Q62702-Z2035 VPS05163
2001 - BAS79A

Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Text: BAS79A.BAS79D Silicon Switching Diodes Switching applications High breakdown voltage Common cathode 4 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C 1 = A1 2=C1/2 3 = A2 BAS79D BAS 79D 1 = A1 2=C1/2 3 = A2 Package 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 Maximum Ratings


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PDF BAS79A. BAS79D VPS05163 EHA00005 BAS79A BAS79B BAS79C OT223 BAS79A BAS79B BAS79C BAS79D VPS05163 Marking 2c1
2001 - Not Available

Abstract: No abstract text available
Text: PZTA13, PZTA14 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: PZTA63, PZTA64 (PNP) 4 3 2 1 VPS05163 Type PZTA13 PZTA14 Maximum Ratings Parameter Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current


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PDF PZTA13, PZTA14 PZTA63, PZTA64 VPS05163 PZTA13 OT223 OT223 Jul-12-2001
2000 - MARKING 93

Abstract: VPS05163 3CTA
Text: PZTA 92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA 42 (NPN) 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC collector current IC 500 Base current IB


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PDF VPS05163 OT-223 EHP00346 EHP00735 Oct-14-1999 EHP00736 EHP00737 MARKING 93 VPS05163 3CTA
1999 - diode 78a

Abstract: 78ad VPS05163 SOT 78B BAS 16 MARKING DIODE marking 78A marking 78ad
Text: BAS 78A . BAS 78D Silicon Switching Diodes · Switching applications 4 · High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS 78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78C BAS 78C 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78D BAS 78D 1=A 2=C 3 = n.c. 4 = C SOT-223 Maximum Ratings Symbol BAS BAS BAS


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PDF VPS05163 EHA00004 OT-223 EHN00020 100ns, Oct-07-1999 EHB00046 diode 78a 78ad VPS05163 SOT 78B BAS 16 MARKING DIODE marking 78A marking 78ad
2001 - PZTA42

Abstract: PZTA92 VPS05163
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 (NPN) 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC collector current IC 500 Base current IB 100 Total


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PDF PZTA92 PZTA42 VPS05163 OT223 EHP00346 EHP00735 Dec-12-2001 EHP00736 PZTA42 PZTA92 VPS05163
2001 - PZTA42

Abstract: PZTA92 VPS05163
Text: PZTA42 NPN Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92 (PNP) 4 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Value Unit Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC collector current IC 500


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PDF PZTA42 PZTA92 VPS05163 OT223 EHP00320 EHP00724 Jun-29-2001 EHP00725 PZTA42 PZTA92 VPS05163
2001 - Not Available

Abstract: No abstract text available
Text: PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA42 (NPN) 4 3 2 1 VPS05163 Type PZTA92 Maximum Ratings Parameter Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 5 500 100 1.5 150 -65 . 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power


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PDF PZTA92 PZTA42 VPS05163 OT223 Jun-29-ax EHP00346 EHP00735 Jun-29-2001
1999 - 79a diode

Abstract: diode 79A VPS05163 W301
Text: BAS 79A . BAS 79D Silicon Switching Diodes · Switching applications 4 · High breakdown voltage · Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79C BAS 79C 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79D BAS 79D 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 Maximum Ratings


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PDF VPS05163 EHA00005 OT-223 100ns, EHN00021 Oct-07-1999 EHB00049 79a diode diode 79A VPS05163 W301
1999 - Not Available

Abstract: No abstract text available
Text: BDP 948, BDP 950 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 947, BDP 949 (NPN) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 948 BDP 948 1=B 2=C 3=E 4=C SOT-223 BDP 950 BDP 950 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 948 BDP 950


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PDF VPS05163 OT-223 Oct-22-1999
1999 - VPS05163

Abstract: No abstract text available
Text: BCP 28, BCP 48 PNP Silicon Darlington Transistors · For general AF applications 4 · High collector current · High current gain · Complementary types: BCP 29/49 (NPN) 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00008 Type Marking Pin Configuration Package BCP 28 BCP 28 1=B 2=C 3=E 4=C SOT-223 BCP 48 BCP 48 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BCP 28 BCP 48 Collector-emitter voltage Unit VCEO 30 60


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PDF VPS05163 EHA00008 OT-223 EHP00246 EHP00247 EHP00248 EHP00249 Oct-20-1999 VPS05163
2000 - VPS05163

Abstract: No abstract text available
Text: BDP 948, BDP 950 PNP Silicon AF Power Transistors For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP 947, BDP 949 (NPN) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 948 BDP 948 1=B 2=C 3=E 4=C SOT-223 BDP 950 BDP 950 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 948 BDP 950


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PDF VPS05163 OT-223 Oct-22-1999 VPS05163
1999 - marking BFG

Abstract: BFG193 VPS05163
Text: BFG 193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz 4 For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 193 BFG193 Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20


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PDF VPS05163 BFG193 OT-223 900MHz Oct-27-1999 marking BFG BFG193 VPS05163
1999 - Q67040-S4326

Abstract: SPN01N50M2 GPS05560 VPS05163 SPn01N50
Text: SPN01N50M2 Target data sheet D,2/4 Cool MOSTM Small-Signal-Transistor 4 · New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated 3 G,1 · Optimized capacitances 2 S,3 1 · Improved noise immunity VPS05163 C OLMOS O · Former development designation: Power Semiconductors SPUx7N60S5/SPDx7N60S5 Type V DS ID RDS(on) SPN01N50M2 500 V 0.33 A 6 Package SOT-223 Marking Ordering Code 01N50M2 Q67040-S4326 Maximum Ratings, at T j


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PDF SPN01N50M2 VPS05163 SPUx7N60S5/SPDx7N60S5 SPN01N50M2 OT-223 01N50M2 Q67040-S4326 Q67040-S4326 GPS05560 VPS05163 SPn01N50
2005 - Not Available

Abstract: No abstract text available
Text: BFN39 PNP Silicon High-Voltage Transistors · Suitable for video output stages in TV sets and switching power supplies · High breakdown voltage · Low collector-emitter saturation voltage · Complementary type: BFN38 (NPN) 4 3 2 1 VPS05163 Type BFN39 Maximum Ratings Parameter Marking BFN 39 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO Value 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current


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PDF BFN39 BFN38 VPS05163 OT223
1999 - transistor c 3906

Abstract: 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906
Text: PZT 3906 PNP Silicon Switching Transistor · High DC current gain: 0.1mA to 100mA 4 · Low collector-emitter saturation voltage · Complementary type: PZT 3904 (NPN) 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 5 DC collector current IC 200 mA Total power


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PDF 100mA VPS05163 OT-223 EHP00714 EHP00302 EHP00715 Oct-13-1999 transistor c 3906 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906
1999 - 947 transistor

Abstract: No abstract text available
Text: BDP 947, BDP 949 Silicon NPN Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 948, BDP 950 (PNP) 2 1 Pin Configuration VPS05163 Type Marking Package BDP 947 BDP 947 1=B 2=C 3=E 4=C SOT-223 BDP 949 BDP 949 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol BDP 947 BDP 949


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PDF VPS05163 OT-223 Oct-22-1999 947 transistor
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