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Part Manufacturer Description Datasheet Download Buy Part
REF01AJ8 Linear Technology IC VOLT REF 10V PREC 8-CDIP
REF01J8 Linear Technology IC VOLT REF 10V PREC 8-CDIP
LTC3459EDC#TRMPBF Linear Technology LTC3459 - 10V Micropower Synchronous Boost Converter in ThinSOT; Package: DFN; Pins: 6; Temperature Range: -40°C to 85°C
LH0070-1H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: -55°C to 125°C
LH0070-0H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: 0°C to 70°C
LH0070-2H Linear Technology LH0070 - Precision 10V Reference; Package: METAL CANS; Pins: 3; Temperature Range: -55°C to 125°C

VGS-10V Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: =10.5 mΩ@ ID=-12.6A, VGS=- 10V Package Q-Level SMD SO-8 page 4 Subscriber Linecard , Features Package RDSon=41mOhm@ ID=6.5A, VGS= 10V SMD SO-8 N-Channel 60-V (D-S) MOSFET Si7370DP Dual N-Channel 60-V (D-S) 175ºC MOSFET RDSon=11mOhm@ ID=15.8A, VGS= 10V Q-Level SMD PowerPAK® SO-8 Si7430DP NEW N-Channel 150-V (D-S) WFET RDSon=45mOhm@ ID=26A, VGS= 10V SMD PowerPAK® SO-8 Si7866ADP NEW N-Channel 20-V (D-S) MOSFET RDSon=2.4mOhm@ ID=40A, VGS= 10V


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PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
2000 - FM2018

Abstract: 2sk1193 fkv550 2SK3332 2SK1368 2SK2943 2SK2245 T03EB0 2SK3460 2SK3199 equivalent
Text: =25ºC) EAS RDS(ON) max (VGS = 10V ) Ciss (typ) (pF) Package Page (V) (A) (W) (mJ , VDS = 10V , I D = 250µA 30 (Tc = 25ºC) W Re (yfs) 1.5 S VDS = 10V , I D = 1.4A EAS * 200 mJ RDS (on) 2.6 VGS = 10V , I D = 1.4A Tch 150 ºC Ciss 350 pF , ) I D ­ VDS Characteristics (typical) 3.0 I D = 1.4A, VDD = 250V, VGS = 10V , See Figure 2 on Page 5. R DS(ON) ­ I D Characteristics (typical) 3.0 5 VDS = 10V VGS = 10V 10V 4 2.0


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PDF T03EB0 H1-T03EB0-0011010TA FM2018 2sk1193 fkv550 2SK3332 2SK1368 2SK2943 2SK2245 T03EB0 2SK3460 2SK3199 equivalent
fet to92

Abstract: SSM3J16TE SSM3J15TE 2SK2825 2SK2035 2SK1830 transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
Text: © @V_GS=4V USM Y 3 Small-signal MOS FET ±20 3.3Ω @V_GS= 10V 4.5Ω @V_GS= 10V USM Y 3 Small-signal , FET 20Ω @V_GS=4V 50Ω @V_GS=4V S-MINI Y 3 Small-signal MOS FET 0.6Ω @V_GS= 10V 1Ω @V_GS= 10V , 1.3Ω @V_GS=- 10V 2Ω @V_GS=- 10V S-MINI Y 3 Small-signal MOS FET 20Ω @V_GS=4V 50Ω @V_GS=4V MINI N 3 Small-signal MOS FET 0.6Ω @V_GS= 10V 1Ω @V_GS= 10V MINI N 3 Small-signal MOS FET 20Ω @V_GS=-4V 50Ω @V_GS=-4V MINI N 3 Small-signal MOS FET 1.3Ω @V_GS=- 10V 2Ω @V_GS=- 10V MINI N 3


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PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 SSM3J16TE SSM3J15TE transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
2N6449

Abstract: MIXER U350 TR320 2N4861 2n4117 equivalent CD860 2N6450 J231 2N5461 SMP5116 2N4858A
Text: MHz Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V , IS = ØA f = 1 MHz , VDS = 20V, VGS = ØV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 pF VDS = 10V , mA 300 mW 2.4 mW/°C IG = 1 µA, VDS = ØV V VDS = ­ 10V , ID = ­ 1 µA mA VDS = ­ 10V , ØA ­ 1.2 ­ 1.2 nA VDS = ­ 10V , VGS = 10 V ­1 ­1 µA VDS = ­ 10V , VGS = 10 V TA = 150°C 150 150 VGS = ØV, ID = Ø A f = 1 kHz 12 mS VDS = ­ 10V , VGS = ØV


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PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2n4117 equivalent CD860 2N6450 J231 2N5461 SMP5116 2N4858A
sanken MOSFET

Abstract: 2sk1193 TO-220F torque 2SK1191 2SK2243 2SK1368 2SK1366 2SK1177 Sanken SH 2SK1180
Text: Characteristics (Ta=25ºC) EAS RDS(ON) max (VGS = 10V ) Ciss (typ) (mJ) () (pF) Package Page , VGS = ±20V 250 µA VDS = 500V, VGS = 0V 4.0 V VDS = 10V , I D = 250µA S VDS = 10V , I D = 1.4A 2.3 EAS * 200 mJ RDS (on) 2.6 VGS = 10V , I D = 1.4A Tch , 3.0 I D = 1.4A, VDD = 250V, VGS = 10V , See Figure 2 on Page 5. I D - RDS (ON) Characteristics 3.0 5 VDS = 10V VGS = 10V 10V 4 2.0 I D (A) I D (A) 5.5V RDS (ON) () 2.0


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PDF T03EA0 H1-T03EA0-9910010TA sanken MOSFET 2sk1193 TO-220F torque 2SK1191 2SK2243 2SK1368 2SK1366 2SK1177 Sanken SH 2SK1180
2SK1368

Abstract: 2SK1366 2SK1181 2SK2243 2SK1370 2sk1193 MOSFET TOSHIBA 2Sj425 2SK2245 2SK1177 2SK1178
Text: Characteristics (Ta=25ºC) EAS RDS(ON) max (VGS = 10V ) Ciss (typ) (mJ) () (pF) Package Page , VGS = ±20V 250 µA VDS = 500V, VGS = 0V 4.0 V VDS = 10V , I D = 250µA S VDS = 10V , I D = 1.4A 2.3 EAS * 200 mJ RDS (on) 2.6 VGS = 10V , I D = 1.4A Tch , 3.0 I D = 1.4A, VDD = 250V, VGS = 10V , See Figure 2 on Page 5. I D - RDS (ON) Characteristics 3.0 5 VDS = 10V VGS = 10V 10V 4 2.0 I D (A) I D (A) 5.5V RDS (ON) () 2.0


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PDF T03EA0 FM100 2SK2704 2SK1370 2SK2706 2SK1711 2SK2778 2SK1713 2SK1714 2SK1368 2SK1366 2SK1181 2SK2243 2SK1370 2sk1193 MOSFET TOSHIBA 2Sj425 2SK2245 2SK1177 2SK1178
A1358

Abstract: ECH8660 pch 100v ech8 A1358-2
Text: = ± 16V, VDS=0V 30 VDS= 10V , ID=1mA VDS= 10V , ID=2A ID=2A, VGS= 10V 1.2 VGS(off) yfs , Ciss VDS= 10V , f=1MHz 240 pF Coss VDS= 10V , f=1MHz 45 pF Crss VDS= 10V , ns tf 7.5 ns Qg nC Qgs VDS= 10V , VGS= 10V , ID=4.5A VDS= 10V , VGS= 10V , ID=4.5A 4.4 1.1 nC 0.84 Qgd VSD VDS= 10V , VGS= 10V , ID=4.5A IS , =0V - 30 VDS= - 10V , ID= - 1mA VDS= - 10V , ID= - 2A ID= - 2A, VGS= - 10V - 1.2 VGS(off


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PDF ECH8660 1200mm2 --10V IT14194 --30A PW10s 1200mm2 IT14196 A1358 ECH8660 pch 100v ech8 A1358-2
1999 - SLA5054

Abstract: No abstract text available
Text: 320 ns FET2 Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS= 10V , ID=250µA VDS= 10V , ID=3.5A VGS= 10V , ID=3.5A VGS=4V, ID=3.5A VDS= 10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS , ns FET3 Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS= 10V , ID=250µA VDS= 10V , ID=2.5A VGS= 10V , ID=2.5A VGS=4V, ID=2.5A VDS= 10V f=1.0MHz VGS=0V ID=2.5A VDD 70V RL=28 VGS=5V ISD , Conditions ID=100µA, VGS=0V VGS=20V VDS=150V, VGS=0V VDS= 10V , ID=250µA VDS= 10V , ID=3.5A VGS= 10V , ID


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PDF SLA5054 SLA5054
ECH8608

Abstract: No abstract text available
Text: =0 VDS=20V, VGS=0 IGSS VGS(off) yfs RDS(on)1 RDS(on)2 VGS= ± 8V, VDS=0 VDS= 10V , ID=1mA VDS= 10V , ID=3A typ min unit max [N-channel] 20 1 ± 10 1.3 0.5 7 V µA µA V 30 44 m m 10 S ID=3A, VGS=4V ID=1.5A, VGS=2.5V 22 30 VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz 780 300 pF pF 150 19 pF ns Ciss Coss , unit Qg Qgs Qgd VDS= 10V , VGS= 10V , ID=6A VDS= 10V , VGS= 10V , ID=6A VDS= 10V , VGS= 10V


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PDF ECH8608 900mm2 IT04392 --40A 900mm2 IT04376 ECH8608
CPH6615

Abstract: No abstract text available
Text: IGSS VDS=30V, VGS=0 VGS= ± 16V, VDS=0 VGS(off) yfs RDS(on)1 RDS(on)2 VDS= 10V , ID=1mA VDS= 10V , ID=1.5A ID=1.5A, VGS= 10V ID=1A, VGS=4V Ciss Coss max 30 , pF pF 33 7.8 pF ns Crss td(on) tr td(off) VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz 18.5 22 ns ns tf 12 ns WB , Qgs Qgd VDS= 10V , VGS= 10V , ID=2.5A VDS= 10V , VGS= 10V , ID=2.5A VDS= 10V , VGS= 10V , ID


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PDF CPH6615 900mm2 --15V --10V IT07310 900mm2 IT07317 IT07318 CPH6615
2012 - 2n4856

Abstract: 2n4856a
Text: CONDITIONS MIN VGS=20V, VDS=0 VGS=20V, VDS=0, TA=150°C VDS=15V, VGS=0 VDS=15V, VGS= 10V VDS=15V, VGS= 10V , TA=150°C IG=1.0A, VDS=0 VDS=15V, ID=0.5nA ID=20mA, VGS=0 VGS=0, ID=0, f=1.0kHz VGS= 10V , VDS=0, f=1.0MHz (2N4856) VGS= 10V , VDS=0, f=1.0MHz (2N4856A) VGS= 10V , VDS=0, f=1.0MHz (2N4856) VGS= 10V , VDS=0, f=1.0MHz (2N4856A) VDD= 10V , VGS(OFF)= 10V , ID=20mA (2N4856) VDD= 10V , VGS(OFF)= 10V , VDD= 10V , VGS(OFF)= 10V , ID , 4.0 10 0.75 25 8.0 4.0 18 10 6.0 5.0 3.0 25 20 VDD= 10V , VGS(OFF)= 10V , ID=20mA (2N4856) VDD= 10V , VGS


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PDF 2N4856 2N4856A 2N4856) 2N4856A)
2012 - Not Available

Abstract: No abstract text available
Text: CONDITIONS MIN VGS=15V, VDS=0 VGS=15V, VDS=0, TA=150°C VDS=15V, VGS=0 VDS=15V, VGS= 10V VDS=15V, VGS= 10V , TA=150°C IG=1.0A, VDS=0 VDS=15V, ID=0.5nA ID=20mA, VGS=0 VGS=0, ID=0, f=1.0kHz VGS= 10V , VDS=0, f=1.0MHz (2N4859) VGS= 10V , VDS=0, f=1.0MHz (2N4859A) VGS= 10V , VDS=0, f=1.0MHz (2N4859) VGS= 10V , VDS=0, f=1.0MHz (2N4859A) VDD= 10V , VGS(OFF)= 10V , ID=20mA (2N4859) VDD= 10V , VGS(OFF)= 10V , VDD= 10V , VGS(OFF)= 10V , ID , 4.0 10 0.75 25 8.0 4.0 18 10 6.0 5.0 3.0 25 20 VDD= 10V , VGS(OFF)= 10V , ID=20mA (2N4859) VDD= 10V , VGS


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PDF 2N4859 2N4859A 2N4859) 2N4859A)
Tf88

Abstract: ECH8608
Text: =0 VDS=20V, VGS=0 IGSS VGS(off) yfs RDS(on)1 RDS(on)2 VGS= ± 8V, VDS=0 VDS= 10V , ID=1mA VDS= 10V , ID=3A typ min unit max [N-channel] 20 1 ± 10 1.3 0.5 7 V µA µA V 30 44 m m 10 S ID=3A, VGS=4V ID=1.5A, VGS=2.5V 22 30 VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz 780 300 pF pF 150 19 pF ns Ciss Coss , max unit Qg Qgs Qgd VDS= 10V , VGS= 10V , ID=6A VDS= 10V , VGS= 10V , ID=6A VDS= 10V


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PDF ECH8608 900mm2 IT04392 --40A 900mm2 IT04376 Tf88 ECH8608
W342

Abstract: FW342 D2004
Text: ] V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VGS(off) yfs VDS= 10V , ID=1mA VDS= 10V , ID=6A RDS(on)1 RDS(on)2 RDS(on)3 ID=6A, VGS= 10V ID=3A, VGS=4.5V ID=3A, VGS=4V W342 typ min , 20707 / D2004 TS IM TA-101197 No.7912-1/6 FW342 Ciss Coss Crss VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz td(on) tr typ 850 min max , ) tf Qg Qgs VDS= 10V , VGS= 10V , ID=6A VDS= 10V , VGS= 10V , ID=6A 16 3.4 nC nC Qgd


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PDF FW342 100ms 1500mm2 1500mm2 IT07399 PW10s W342 FW342 D2004
IT0251

Abstract: ta2909 MCH6614 TA-2909
Text: =30V, VGS=0V VGS= ± 8V, VDS=0V VDS= 10V , ID=100µA VDS= 10V , ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz min typ max 30 , [P-channel] min Qg Qgs Qgd VSD VDS= 10V , VGS= 10V , ID=150mA VDS= 10V , VGS= 10V , ID=150mA VDS= 10V , VGS= 10V , ID=150mA IS=150mA, VGS=0V V(BR)DSS IDSS IGSS VGS , ID= - 1mA, VGS=0V VDS= - 30V, VGS=0V VGS= ± 8V, VDS=0V VDS= - 10V , ID= - 100µA VDS= - 10V , ID= -


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PDF MCH6614 N6795 900mm2 --200mA 900mm2 IT02517 IT02516 IT02518 IT0251 ta2909 MCH6614 TA-2909
2SK544

Abstract: mosfet 2sk882 2SK543 2SK882 VDS-10V
Text: ) 1.20 12.00 Vds= 10V , Vgs=0 lDSsKi}-CJ3: 1.2~3mA, CJ4: 2. 5~6mA, CJ5: 5~12mA Vgs(±V) 5 lYfsl(mS) 11.00 Vds= 10V . Vgs=0, f=lkHz Id(hA) 30 Ciss(pF) 2. 40 Vds= 10V , Vgs=0, f=lMHz (±ffi) Pd(i« 200 Crss(pF) 0.04 Vds= 10V , Vgs=0. f=lMHz TchCC) 125 PG(dB) 27.00 Vds= 10V ,Vgs=0, f=100MHz □ □ NF(dB) 1.80 3. 00 Vos= 10V ,Vgs=0, f=100MHz •2SK544 M&:FM 1-^—f, VHF ©ittifflo «ft : «Wi»*^^ SI Vds(V) 20 idss(mA) 1. 20 12.00 Vds= 10V ,Vgs-0 IdssK» - D: 1. 2~3mA, E:2. 5


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PDF 2SK543 100MHz 2SK544 mosfet 2sk882 2SK882 VDS-10V
m5577

Abstract: A1777 A1777-5 ech8661 S3039
Text: =30V, VGS=0V VGS(off) yfs RDS(on)1 VDS= 10V , ID=1mA VDS= 10V , ID=3.5A ID=3.5A, VGS= 10V RDS(on)2 , 3.7 18 S Ciss ID=2A, VGS=4.5V ID=2A, VGS=4V VDS= 10V , f=1MHz 29 41 m 39 55 m 710 pF Coss VDS= 10V , f=1MHz 120 pF Crss VDS= 10V , f=1MHz 72 , 25 ns Qg VDS=15V, VGS= 10V , ID=7A 11.8 nC Qgs VDS=15V, VGS= 10V , ID=7A 2.4 nC Qgd VDS=15V, VGS= 10V , ID=7A 2.0 nC VSD IS=7A, VGS=0V V(BR


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PDF ECH8661 900mm2 011A-001 --40A PW10s) 900mm2 IT15729 m5577 A1777 A1777-5 ech8661 S3039
CPH6610

Abstract: MCH3335 MCH3408
Text: ) VGS= ± 16V, VDS=0 VDS= 10V , ID=1mA yfs RDS(on)1 VDS= 10V , ID=700mA ID=700mA, VGS= 10V RDS(on)2 Ciss Coss Crss ID=400mA, VGS=4V VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f , max unit Qg Qgs Qgd VDS= 10V , VGS= 10V , ID=1.4A VDS= 10V , VGS= 10V , ID=1.4A VDS= 10V , VGS= 10V , ID=1.4A [P-channel] VSD IS=1.4A, VGS=0 V(BR)DSS IDSS ID= - 1mA, VGS=0 VDS= - 30V, VGS=0 IGSS VGS(off) yfs RDS(on)1 VGS= ± 8V, VDS=0 VDS= - 10V , ID= -


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PDF CPH6610 MCH3335) MCH3408) 900mm2 700mA 700mA, 400mA, IT08165 900mm2 CPH6610 MCH3335 MCH3408
A0933

Abstract: VEC2601 TC-00000864
Text: =0V IGSS VGS(off) yfs RDS(on)1 VGS= ± 8V, VDS=0V VDS= 10V , ID=100µA VDS= 10V , ID=80mA ID , . A0933-1/7 VEC2601 Ciss Coss Crss td(on) tr min VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz typ 7.0 max unit pF 5.9 2.3 pF pF 19 65 ns ns 155 120 ns ns td(off) tf Qg Qgs VDS= 10V , VGS= 10V , ID=150mA VDS= 10V , VGS= 10V , ID=150mA 1.58 0.26 nC nC Qgd VSD VDS= 10V , VGS= 10V , ID=150mA IS


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PDF VEC2601 900mm2 --10V 900mm2 IT12928 IT12929 A0933-6/7 A0933-7/7 A0933 VEC2601 TC-00000864
2001 - SMA5103

Abstract: No abstract text available
Text: 10 10V N-ch 10 (VDS= 10V ) ­ 10V 7V 8 8 6V ­7V ID (A) 6 ID (A , (VGS= 10V ) 0.20 P-ch (VDS=­ 10V ) (VGS=­ 10V ) 0.6 ­8 TC=­40°C 25°C 0.5 0.4 ID (A , P-ch ID=5A VGS= 10V 1.0 ID=­4A VGS=­ 10V () (ON) RDS RDS (ON) () 0.8 0.2 , VDS= 10V , ID=250µA ­2.0 S VDS= 10V , ID=5A 1.6 VTH 2.0 2.2 3.3 max Conditions , VDS=­60V, VGS=0V ­4.0 V VDS=­ 10V , ID=­250µA S VDS=­ 10V , ID=­4A 2.2 RDS(ON


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PDF SMA5103 SMA5103
2001 - SLA6023 application

Abstract: SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY
Text: No file text available


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PDF H1-T07EB0-0103020ND SLA6023 application SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY
2006 - A0350

Abstract: No abstract text available
Text: =0V VDS=30V, VGS=0V VGS=± 10V , VDS=0V VDS= 10V , ID=1mA VDS= 10V , ID=9A 30 1 ±10 1.0 7.5 12.5 2.4 V µA µA V S , RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=9A, VGS= 10V ID=5A, VGS=4.5V ID=5A, VGS=4V VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS= 10V , VGS= 10V , ID=9A VDS= 10V , VGS= 10V , ID=9A VDS= 10V , VGS= 10V , ID=9A IS=9A, VGS=0V ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS


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PDF ENA0350 FW363 FW363 PW10s) PW100ms) 1200mm2 PW10s A0350-6/6 A0350
2000 - FW340

Abstract: IT-1109 a04242
Text: =25 [N-channel] V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VGS(off) yfs VDS= 10V , ID=1mA VDS= 10V , ID=5A RDS(on)1 RDS(on)2 ID=5A, VGS= 10V ID=3A, VGS=4.5V RDS(on)3 ID=3A, VGS , Coss Crss VDS= 10V , f=1MHz VDS= 10V , f=1MHz VDS= 10V , f=1MHz td(on) tr min typ , td(off) tf Qg Qgs VDS= 10V , VGS= 10V , ID=5A VDS= 10V , VGS= 10V , ID=5A 8.6 2.0 nC nC Qgd VSD VDS= 10V , VGS= 10V , ID=5A IS=5A, VGS=0V 1.6 0.9 1.2 nC V [P-channel] V


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PDF FW340 100ms 2000mm2 2000mm2 IT11095 A0424-5/6 PW10s FW340 IT-1109 a04242
1997 - ZVP4424A

Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003788 zvp4424c
Text: =0V, T=125°C A VDS=-10 V, VGS=- 10V On-State Drain Current ID(on) A VDS=-10 V, VGS=- 10V 9 11 VGS=- 10V ,ID=-200mA VGS=-3.5V,ID=-100mA Static Drain-Source On-State Resistance RDS(on) VGS=- 10V ,ID=-200mA VGS=-3.5V,ID=-100mA mS VDS=- 10V ,ID=-0.2A Forward Transconductance (1) (2) gfs mS VDS=- 10V ,ID=-0.2A On-State Drain Current ID(on) Static , (2)(3) tf 20 30 ns VDS=-25V, VGS=0V, f=1MHz VDD -50V, ID =-0.25A, VGEN=- 10V (1


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PDF ZVP4424A -100V ZVP4424A P-Channel FET 100v to92 to92 fet p channel DSA003788 zvp4424c
2000 - W906

Abstract: A1809 mos n-ch IT15834
Text: =0V IDSS IGSS VDS=30V, VGS=0V VGS(off) yfs RDS(on)1 VDS= 10V , ID=1mA VDS= 10V , ID=8A ID=8A, VGS= 10V , 24 m 4.5 18 S Ciss ID=4A, VGS=4.5V ID=4A, VGS=4V VDS= 10V , f=1MHz 29 41 m 39 55 m 690 pF Coss VDS= 10V , f=1MHz 120 pF Crss VDS= 10V , ns tf 26 ns Qg VDS=15V, VGS= 10V , ID=8A 12 nC Qgs VDS=15V, VGS= 10V , ID=8A 2.5 nC Qgd VDS=15V, VGS= 10V , ID=8A 1.9 nC VSD IS


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PDF FW906 100ms 2000mm2 005A-003 SC-87, 2000mm2 IT15840 A1809-5/6 W906 A1809 mos n-ch IT15834
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