The Datasheet Archive

SF Impression Pixel

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
LVDS47/48EVK Rochester Electronics - - -

No Results Found

Show More

VDS47 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: 4.4+0/-0.3 2MIN  High voltage operation VDS=47V  High output power Po=40.5dBm(TYP , =25C Electrical characteristics Symbol 1.9±0.4  Vds=47V 1.①5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V ,ID=3mA 3dB gain compression power VDS=47V ,ID(RF off)=90mA P1dB 1dB , . (Ta 80C)  Bias conditions Vds=47V , Ids=90mA  Time 10hrs 1 < High-power GaN HEMT , C BAND / 10W non - matched MGF0840G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=90(mA) ) S


Original
PDF MGF0840G MGF0840G,
2011 - Not Available

Abstract: No abstract text available
Text: 4.4+0/-0.3 2MIN  High voltage operation VDS=47V  High output power Po=43.5dBm(TYP , =25C Electrical characteristics Symbol 1.9±0.4  Vds=47V 1.①5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V ,ID=6mA 3dB gain compression power VDS=47V ,ID(RF off)=170mA P1dB 1dB , . (Ta 80C)  Bias conditions Vds=47V , Ids=170mA  Time 10hrs 1 < High-power GaN HEMT , / 20W non - matched MGF0843G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=180(mA) ) S Parameters(Typ


Original
PDF MGF0843G MGF0843G,
2011 - Not Available

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=43.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=170mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V ,ID=6mA VDS=47V ,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=170mA Time 10hrs , matched PRELIMINARY MGF0843G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=180(mA) ) f (GHz) 0.6 1.0


Original
PDF MGF0843G MGF0843G, 170mA
2011 - Not Available

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=46.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=340mA Rg , resistance Test conditions Min. VDS=47V ,ID=12mA VDS=47V ,ID(RF off)=340mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=340mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , =25deg.C , VDS=47 (V),IDS=350(mA) ) f (GHz) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0


Original
PDF MGF0846G MGF0846G, 340mA
2011 - Not Available

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=46.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=340mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V ,ID=12mA VDS=47V ,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=340mA Time 10hrs , matched PRELIMINARY MGF0846G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=350(mA) ) f (GHz) 0.6 1.0


Original
PDF MGF0846G MGF0846G, 340mA
2011 - Not Available

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=43.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=170mA Rg , resistance Test conditions Min. VDS=47V ,ID=6mA VDS=47V ,ID(RF off)=170mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=170mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , ) > MGF0843G L to C BAND / 20W non - matched PRELIMINARY MGF0843G S-parameters( Ta=25deg.C , VDS=47 (V


Original
PDF MGF0843G MGF0843G, 170mA
2011 - Not Available

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=40.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=90mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V ,ID=3mA VDS=47V ,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=90mA Time 10hrs , matched PRELIMINARY MGF0840G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=90(mA) ) f (GHz) 0.6 1.0


Original
PDF MGF0840G MGF0840G,
2011 - Not Available

Abstract: No abstract text available
Text: 4.4+0/-0.3 2MIN  High voltage operation VDS=47V  High output power Po=46.5dBm(TYP , =25C Electrical characteristics Symbol 1.9±0.4  Vds=47V 1.①5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V ,ID=12mA 3dB gain compression power VDS=47V ,ID(RF off)=340mA P1dB , GaN-HEMT. (Ta 80C)  Bias conditions Vds=47V , Ids=340mA  Time 10hrs 1 < High-power GaN , C BAND / 40W non - matched MGF0846G S-parameters( Ta=25deg.C , VDS=47 (V),IDS=350(mA) ) S


Original
PDF MGF0846G MGF0846G,
2011 - s band gan 10W

Abstract: No abstract text available
Text: operation VDS=47V High output power Po=40.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=90mA Rg , Thermal resistance Test conditions Min. VDS=47V ,ID=3mA VDS=47V ,ID(RF off)=90mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=90mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , =25deg.C , VDS=47 (V),IDS=90(mA) ) f (GHz) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0


Original
PDF MGF0840G MGF0840G, s band gan 10W
Supplyframe Tracking Pixel