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Part Manufacturer Description Datasheet Download Buy Part
LT1215CN8#PBF Linear Technology LT1215 - 23MHz, 50V/µs, Single Supply Dual Precision Op Amps; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1216CS#TR Linear Technology LT1216 - 23MHz, 50V/µs, Single Supply Quad Precision Op Amps; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1216CS Linear Technology LT1216 - 23MHz, 50V/µs, Single Supply Quad Precision Op Amps; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1215ACN8#PBF Linear Technology LT1215 - 23MHz, 50V/µs, Single Supply Dual Precision Op Amps; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1215CS8#PBF Linear Technology LT1215 - 23MHz, 50V/µs, Single Supply Dual Precision Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1216CN#PBF Linear Technology LT1216 - 23MHz, 50V/µs, Single Supply Quad Precision Op Amps; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C

VCB0-50V Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BC138 TRANSISTOR

Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Text: match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min;hFE match-40%;VBE match-15mV. Pt , ;Cob-6pf max PA-300mW; VCEO-55V; hFE-100 min; hFE 1/hFE2-.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V , -510V max;Pd-15mW. 4 leaded T05 or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0-30V; IC-3.0A max;hFE-15000 Typ/VCE- 5.0V ;lc-1.0A. Pc


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PDF diff40V 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; BC138 TRANSISTOR 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
2N5508

Abstract: l53b 5 BC138 2N1019 2SJ11 2N4241 Transistors 2n551 2N551 2N4042 K1502
Text: PT 300mw Both Sides BVCBO 100Vmin; hFE match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min , -.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V . 106# 107 108 40809 A520 A521 6 6 6 P-N N-PL N-PL Ge , or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0-30V; IC-3.0A max;hFE-15000 Typ/VCE- 5.0V ;lc-1.0A. Pc-10W max;BVCB0-30V; IC


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PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N5508 l53b 5 BC138 2N1019 2SJ11 2N4241 Transistors 2n551 2N551 2N4042 K1502
CM601

Abstract: OC74 2N4241 BSV39 2N4042 BC222 TRANSISTOR BD117 ft06 200S A190
Text: match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min;hFE match-40%;VBE match-15mV. Pt , ;Cob-6pf max PA-300mW; VCEO-55V; hFE-100 min; hFE 1/hFE2-.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V , -510V max;Pd-15mW. 4 leaded T05 or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0-30V; IC-3.0A max;hFE-15000 Typ/VCE- 5.0V ;lc-1.0A. Pc


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PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; CM601 OC74 2N4241 BSV39 2N4042 BC222 TRANSISTOR BD117 ft06 200S A190
BD117

Abstract: BC138 2N3523 st610 transistor 2N4241 2N4042 2N1019 2N3942 A520 2N5514
Text: match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min;hFE match-40%;VBE match-15mV. Pt , ;Cob-6pf max PA-300mW; VCEO-55V; hFE-100 min; hFE 1/hFE2-.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V , -510V max;Pd-15mW. 4 leaded T05 or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0-30V; IC-3.0A max;hFE-15000 Typ/VCE- 5.0V ;lc-1.0A. Pc


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PDF diff40V 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; BD117 BC138 2N3523 st610 transistor 2N4241 2N4042 2N1019 2N3942 A520 2N5514
BC138

Abstract: 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 transistor bc138 OC74 BSW12 bc143
Text: PT 300mw Both Sides BVCBO 100Vmin; hFE match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min , -.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V . 106# 107 108 40809 A520 A521 6 6 6 P-N N-PL N-PL Ge , T018 L40 BVDG0-30V min;gm-200umhos min;Vp-510V max;Pd-15mW. 4 leaded T05 or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0


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PDF diff40V 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; BC138 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 transistor bc138 OC74 BSW12 bc143
BC138

Abstract: 2N3520 BD117 2CY38 OC74 ST8014 2n5509 usaf521es071 2N4042 2N3523
Text: PT 300mw Both Sides BVCBO 100Vmin; hFE match ,90/1.0;VBE match 3.0mV. PT-.75W both sides; VCB0-50V min , -.80 to 1.0. Pt-25W; VCB0-50V ; VCE0 30V: VEBO- 5.0V . 106# 107 108 40809 A520 A521 6 6 6 P-N N-PL N-PL Ge , T018 L40 BVDG0-30V min;gm-200umhos min;Vp-510V max;Pd-15mW. 4 leaded T05 or T046; BVDSS- 50V ; IDSS-100nA max; gfs-1000u mhos Pt-.35W;Voo- 5.0V :BVDS- 50V ;IDO-6.0mA;BVDG-65V. 4# 5 6 ZFT18 2N1019 2N1020 3 4 4 N-PL PNN NPP Si Ge- Ge- L40 Si Si Pt-.35W;Vpo- 5.0V ;BVDS-100V:ID0-6.0mA;BVDG-100 V, PC-10W max;BVCB0


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PDF 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; VCB0-50V; BC138 2N3520 BD117 2CY38 OC74 ST8014 2n5509 usaf521es071 2N4042 2N3523
2N3767

Abstract: 2N3766 TO-66
Text: VCE=Rated VCB0, VBE=1.5V ICEV VCE= 50V , Vbe=1.5V, TC=150°C ICEV VCE=70V, VBE=1.5V, TC=150°C 'CBO , , ^BE(ON) VCE=10V, hFE VCE= 5.0V , hFE VCE= 5.0V , hFE VCE=10V, hfe VCE=10V, fT VCE=10V, Cob VCB


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PDF 2N3766 2N3767 2N3766, 2N3767 100mA 500mA, 500mA TO-66
2010 - ipod touch circuit diagram

Abstract: iphone circuit diagram ipod classic circuit diagram MAX14550 iphone 3gs ipod touch 2g iphone 3G apple iphone circuits iphone 2g BLACKBERRY BATTERY
Text: connected to DP and DM. 9 USB Host Charger Identification Analog Switch MAX14550E 3.3V TO 5.0V 0.1µF USB TRANSCEIVER DVCC_SW 5.0V RP1 75kI RDP 49.9kI RM2 43.2kI RDM 49.9kI 0.4V R 2.1V GND S Q CONTROL , MAX14550E Typical Operating Circuit 5.0V 0.1µF USB TRANSCEIVER DVCC_SW RP1 RP2 RDP VCC_SW RM1 RM2 RDM 0.4V


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PDF MAX14550E MAX14550E ipod touch circuit diagram iphone circuit diagram ipod classic circuit diagram MAX14550 iphone 3gs ipod touch 2g iphone 3G apple iphone circuits iphone 2g BLACKBERRY BATTERY
2009 - MAX14531E

Abstract: VCB1
Text: (shutdown) VCC = +3.3V Supply Current ICC VCC = + 5.0V VCB0 = VCC or VCB1 = VCC VCB0 = + 5.0V VCB0 = VCB1 = 0 , = +3.0V, VCB0 = 0 to + 5.0V Time delay between one side of the switch opening and the other side


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PDF MAX14531E MAX14534E MAX14531E­ MAX14534E W121A2-1 VCB1
2009 - Not Available

Abstract: No abstract text available
Text: ) 1 ICC VCC = + 5.0V Supply Current Increase ∆ICC VBUS Detect Threshold VVBDET , + 5.0V 25 VCB0 = VCB1 = VIH or VIL VCB0 rising 2 VCC + 0.2 VCB0 falling, hysteresis VCB0 , , VUAXY_ = +3.0V, RL = 50Ω, CL = 10pF, VCB1 = +3.0V, VCB0 = 0 to + 5.0V 15 200 µs


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PDF MAX14531Eâ MAX14534E MAX14534E single-ended/90â
2N6055

Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
Text: 5.0V 00mA (2N6053, 2N6055) 00mA (2N6054, 2N6056) .OA, IB=16mA •OA, IB=80mA •OA, IB=80mA 3.0V


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PDF 2N6053 2N6054 2N6055 2N6056 2N6053, 2N6055) 2N6054, 2N6056) 2N6055 transistor 2N6052
Not Available

Abstract: No abstract text available
Text: 3.3V TO 5.0V USB TRANSCEIVER 0.1µF DVCC VCC_SW TDM D+ TDP 5.0V RP1 RP2 75kI , ) MAX14550E USB Host Charger Identification Analog Switch Typical Operating Circuit 5.0V USB


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PDF MAX14550E MAX14550E
2N6294

Abstract: 2N6297 2N6295 2N6296 ic1.5a
Text: 0.5 0.5 mA 1 EBO Vbe= 5.0V 2.0 2.0 mA bvceo 1c=50mA 60 80 V VCE(SAT) IC=2.0A, B=8. OmA


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PDF 2N6294 2N6295 2N6296 2N6297 T0-66 2N629b 2N6295 2N6296 2N6297 ic1.5a
2N5308

Abstract: 2N5306 631 TO92 transistor 7k
Text: (on) Vce = 5.0V , lc = 200mA 1.5 1.5 V hfe Vce = 5.0V , Iq = 2.0mA 7K 70K 7K 70K hfe Vce = 5.0V , lc


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PDF 2im5306 2n5308 to-92 2N5306, 2N5308 2N5306 100nA 631 TO92 transistor 7k
Not Available

Abstract: No abstract text available
Text: are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX , 0V to VCC, ITDP = ITDM = 10mA 3.5 DRON VCC = 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA 0.1 I RFLAT VCC = 5.0V , VDP = VDM = 0 to VCC, IDP = IDM = 10mA 0.1 I 70 , . Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL Turn-Off Time tOFF , . Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP


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PDF MAX14617 MAX14617 YD/T1591-2009
BSW67

Abstract: BSW68 LG 631 IC transistor bsw67
Text: 1.2 V hFE VCE= 5.0V , lc=10mA 30 30 hFE Vce= 5.0V , lc=100mA 40 40 hFE Vce= 5.0V , lc=500mA 30 30 hFE VCE= 5.0V , lc=1.0A 15 15 BSW67 BSW68 NPN SILICON TRANSISTOR JEDEC TO-39 CASE


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PDF BSW67, BSW68 BSW67 BSW68 100mA 500mA BSW67 LG 631 IC transistor bsw67
2N3771

Abstract: 2N3772 RBE1
Text: CONDITIONS vCB0 VQB=Rated VCE=30V VCE= 50V VCE=Rated VCB0, VBE=1.5V VCE=30V, Vbe=1.5V, TC=150°C VEB=Rated


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PDF 2n3771 2n3772 2N3771, 2N3772 50kHz 2N3771 RBE1
2012 - iphone circuit diagram

Abstract: 30 pin dock connector ipod APPLE dock 30 pin connector iphone apple iphone 5 apple iphone circuits 30 pin dock connector apple iphone pin connector Maxim MicroUSB iPod connector
Text: 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC. , ITDPOFF, ITDMOFF IDPON, IDMON tON VTDP = VTDM = 0V to VCC, ITDP = ITDM = 10mA VCC = 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA VCC = 5.0V , VDP = VDM = 0 to VCC, IDP = IDM = 10mA VCB0 = 0V, VCB1 = VCC, VCB2 = , , unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER Turn-Off Time , 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2


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PDF MAX14617 iphone circuit diagram 30 pin dock connector ipod APPLE dock 30 pin connector iphone apple iphone 5 apple iphone circuits 30 pin dock connector apple iphone pin connector Maxim MicroUSB iPod connector
2012 - apple 30 pin connector

Abstract: apple iphone circuits 30 pin connector iphone iphone pin connector 30 pin dock connector ipod Maxim RS Integrated Products 2012 max1461 micro usb id pin 16 pin connector iphone MAX14604
Text: 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC. , to VCC, ITDP = ITDM = 10mA VCC = 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA VCC = 5.0V , VDP = VDM = 0 , 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2 , ) (VCC = 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA =


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PDF MAX14600 MAX14605/MAX14618 MAX14605 MAX14618 MAX14600/MAX14603/MAX14605 MAX14601/ MAX14604/MAX14618 apple 30 pin connector apple iphone circuits 30 pin connector iphone iphone pin connector 30 pin dock connector ipod Maxim RS Integrated Products 2012 max1461 micro usb id pin 16 pin connector iphone MAX14604
2011 - iphone circuit diagram

Abstract: 30 pin dock connector ipod apple 30 pin connector IPHONE PARTS 30 pin connector iphone dock connector apple ipod dock apple iphone circuits iphone 5 circuit diagram
Text: 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC. , 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA 0.1 I On-Resistance Flatness TDP/TDM Switch RFLAT VCC = 5.0V , VDP = VDM = 0 to VCC, IDP = IDM = 10mA 0.1 I 70 On-Resistance of DP/DM , ) (VCC = 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = , VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS


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PDF MAX14600 MAX14605/MAX14618 MAX14605 MAX14618 YD/T1591-2009 iphone circuit diagram 30 pin dock connector ipod apple 30 pin connector IPHONE PARTS 30 pin connector iphone dock connector apple ipod dock apple iphone circuits iphone 5 circuit diagram
2SC2204

Abstract: TB-30 2SC2220 invertor AC63 ic30a VCEO-400V VCB0-500V
Text: =6A - - 2 0 Collector Output Capacitance Cob Vcb= 50V , IE=0, f=lMHz - 400 - pF Switching Time


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PDF iCH725D 00D7504 2SC2204-â 2SC2220 2SC2204) 2SC2220) VCB0-500V 2SC2204 TB-30 2SC2220 invertor AC63 ic30a VCEO-400V
TIP147T

Abstract: TIP140T TIP141T TIP142T TIP145T TIP146T PI46T
Text: .0 1 .0 1 .0 mA 'ceo VCE=i Rated VCE0 2.0 2.0 2.0 mA 1 EBO VBE= 5.0V 2.0 2.0 2.0 mA bvceo


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PDF TIP140T TIP141T TIP142T TIP145T TIP147T T0-220 TIP140T, TIP142T TIP146T PI46T
2012 - Not Available

Abstract: No abstract text available
Text: 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC. , 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA 0.1 I On-Resistance Flatness TDP/TDM Switch RFLAT VCC = 5.0V , VDP = VDM = 0 to VCC, IDP = IDM = 10mA 0.1 I 70 On-Resistance of DP/DM , otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL Turn-Off , otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL CONDITIONS


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PDF MAX14600â MAX14605/MAX14618 MAX14605 MAX14618 YD/T1591-2009
MPS5308

Abstract: MPS5307 MPS5305 MPS5306 MPS5306A MPS5308A
Text: 1.4 V vBE(0N) VCE= 5.0V , 1c=200mA 1.5 1.5 V hFE vce=5.ov, 1q=2.0mA 2,000 20,000 7,000 70,000 hFE Vce= 5.0V , VCE= 5.0V , Iq=100mA 6,000 20,000 hfe lc=2.0mA, f=1.0kHz 2,000 7,000 lhfel Vce= 5.0V , VCE= 5.0V , lr=0.6mA, RG=l60kfi, f=10Hz to 10kHz, B. W.=15.7kHz(MPS5306A,MPS5308A only) - - 195


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PDF MPS5305 MPS5306 MPS5307 MPS5308 T-33-29 MPS5305 MPS5307 CBR30 0000S23 MPS5306A MPS5308A
2012 - Not Available

Abstract: No abstract text available
Text: 3.0V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC. , 5.0V , VDP = VDM = 400mV, IDP = IDM = 10mA 0.1 I On-Resistance Flatness TDP/TDM Switch RFLAT VCC = 5.0V , VDP = VDM = 0 to VCC, IDP = IDM = 10mA 0.1 I 70 On-Resistance of DP/DM , otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL Turn-Off , otherwise noted. Typical values are at VCC = 5.0V , TA = +25NC.) (Note 2) PARAMETER SYMBOL CONDITIONS


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PDF MAX14600â MAX14605/MAX14618 MAX14605 MAX14618 YD/T1591-2009
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