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USD1120 ZENER

Abstract: USD1120 USD1120 diode VARO VM68 UFS1002 UFN833 AIC3842CSTR AIC3842 ds3842 VM68
Text: D6 VARO VM68 C1 250µF 250V R12 C9 2W R2 56K 2W 4.7K D4 D2 R3 4.7k


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PDF AIC3842 500KHz AIC3842 USD1120 ZENER USD1120 USD1120 diode VARO VM68 UFS1002 UFN833 AIC3842CSTR ds3842 VM68
2005 - USD1120 ZENER

Abstract: USD1120 diode USD1120
Text: Flyback Regulator R1 5Ω 1W 117 VAC L1 10µH D6 VARO VM68 C1 250µF 250V R12 C9


Original
PDF AIC3842 500KHz AIC3842 USD1120 ZENER USD1120 diode USD1120
2005 - USD1120 ZENER

Abstract: USD1120 diode
Text: 117 VAC L1 10µH D6 VARO VM68 C1 250µF 250V R12 C9 2W R2 56K 2W 4.7K


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PDF AIC3843 500KHz AIC3843 USD1120 ZENER USD1120 diode
USD1120

Abstract: USD1120 ZENER VARO VM68 UFS1002 diode USD1120 3A1 zener diode 3843G UFN833 USD1120 datasheet USD1120 diode
Text: D6 VARO VM68 C1 250µF 250V R12 C9 2W R2 56K 2W 4.7K D4 4.7k D2 R3


Original
PDF AIC3843 500KHz AIC3843 USD1120 USD1120 ZENER VARO VM68 UFS1002 diode USD1120 3A1 zener diode 3843G UFN833 USD1120 datasheet USD1120 diode
2004 - USD1120 diode

Abstract: UFS1002
Text: 117 VAC L1 10µH D6 VARO VM68 C1 250µF 250V R12 C9 2W R2 56K 2W T1


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PDF AIC3843 500KHz AIC3843 USD1120 diode UFS1002
2004 - Not Available

Abstract: No abstract text available
Text: 117 VAC L1 10µH D6 VARO VM68 C1 250µF 250V R12 C9 2W R2 56K 2W 4.7K


Original
PDF AIC3843 500KHz AIC3843
AIC3843

Abstract: USD1120 diode USD1120 VARO VM68 UFS1002 diode USD1120 UFN833 USD1120 ZENER ufn833 mosfet USD1120 datasheet
Text: R1 5 1W 117 VAC L1 10µH D6 VARO VM68 C1 250µ F 250V R12 C9 2W R2 56K


Original
PDF AIC3843 AIC3843 USD1120 diode USD1120 VARO VM68 UFS1002 diode USD1120 UFN833 USD1120 ZENER ufn833 mosfet USD1120 datasheet
2004 - Not Available

Abstract: No abstract text available
Text: Flyback Regulator R1 5Ω 1W 117 VAC L1 10µH D6 VARO VM68 C1 250µF 250V R12 C9


Original
PDF AIC3842 500KHz AIC3842
aic3842

Abstract: USD1120 USD1120 diode UFN833 diode USD1120 USD1120 ZENER UFS1002 VARO VM68 AIC 3842 AN USD1120 datasheet
Text: VAC L1 10µH D6 VARO VM68 C1 250µ F 250V R12 C9 2W R2 56K 2W T1


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PDF AIC3842 AIC3842 USD1120 USD1120 diode UFN833 diode USD1120 USD1120 ZENER UFS1002 VARO VM68 AIC 3842 AN USD1120 datasheet
Varo Semiconductor

Abstract: H1601-10 VARO P6042 varo h1601 H1601-18 H1601-5 t4-m33 VARO VF 12 H1601-2
Text:  VARO ÖUALITY : SD DE 11443333 □□□□ìli 4 VARO SEMICONDUCTOR, INC., P.O. Box 469013 ^^ 1000 N. Shiloh; Garland, Texas 75046-9013 VARO (214) 271-8511 TWX 910-860-5178 High Voltage, Fast Recovery Medium Current Rectifier H1601 Series _January 1963 • Platinum Doped j ? * T; 77 " •/ P 3 - , MAXIMUM RATINGS (At TA=25°C unless otherwise noted) VARO Type No. Package Style Repetitive Peak , should be overmolded or operated in oil or a gaseous dielectric to prevent corona or arcing. 155 VARO


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PDF H1601 100mA H1601-1 400mA T4M3333 HP214A 160Kn P6042 Varo Semiconductor H1601-10 VARO varo h1601 H1601-18 H1601-5 t4-m33 VARO VF 12 H1601-2
varo semiconductor

Abstract: VARO ci983 VARO VF 25-25 FRM100 VF70
Text:  VARO DUALITY VARO ^50 DET| <=1443333 0000^3^ VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shlloh; Garland, Texas 75046-9013 _ (214) 271-8511 TWX 910-860-5178 High Voltage Rectifier H 1756 Series 1*3-05" January 1984 • Glass Passivateci • Epoxy Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery I MAXIMUM RATINGS (At Ta = 25°C unless otherwise , .200 DIA. 5,08 DIA. 183 VARO C3UALITY SO DE J TM4333B □OOOtì4D □ -T^Z'à -OS' ï TYPICAL HIGH


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PDF TM4333B HP214A-KaPU 0-400VDC TEKTROMXPa04Ã varo semiconductor VARO ci983 VARO VF 25-25 FRM100 VF70
varo semiconductor

Abstract: VARO HB-S Rectifier RGPP10K RGPP10J RGPP10G RGPP10D RGPP10B RGPP10A IR 9443
Text: 9443333 VARO QUALITY , Ti"1>E~| 443333 □ □□□'Hb S f T-Ö3-/3 RGPPIO SERIES GLASS PASSIVATED FAST SWITCHING RECTIFIER FEATURES • Glass passivated junction • Low forward voltage â , applied reverse voltage of 4.0 Volts _ 9443333 VARO QUALITY _> 63C 00997 D ~lT~C>'2>^/3 VARO ÖUALITY bB , €”PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz VARO VARO SEMICONDUCTOR, INC. 1000 N. SHI LOH., P. 0. BOX 469013 GARLAND, TEXAS 75046-9013 PHONE: (214)271-8511 TELEX: 163135VARO UT TWX: 910865178 VARO SC


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PDF MIL-STD-202, DO-41 50/100ns/cm --------60HZ 163135VARO varo semiconductor VARO HB-S Rectifier RGPP10K RGPP10J RGPP10G RGPP10D RGPP10B RGPP10A IR 9443
varo diode

Abstract: Varo Semiconductor varo MH911 Varo Semiconductor diode High Voltage Multipliers VARO MH911 H467 High Voltage Multipliers VARO MH353
Text: G VARO SEMICONDUCTOR, INC. P.O. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 m HIGH VOLTAGE RECTIFIERS FOR X-RAY APPARATUS The required peak reverse voltage determines the number of individual diode packages used in series for the completed, unencapsulated rectifier. Each , diodes used, Varo type H463 may be purchased separately. L .56 r I .50 I .38 — , 6.00 T .50 , — Varo P/N MH353 * 6KV 24.0KV 23.0KV •Prices on request. CASE STYLE AND CIRCUIT FOR: DOUBLER


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PDF MH911* MH919* MH353 varo diode Varo Semiconductor varo MH911 Varo Semiconductor diode High Voltage Multipliers VARO MH911 H467 High Voltage Multipliers VARO MH353
varo diode

Abstract: High Voltage Multipliers VARO varo semiconductor Varo Semiconductor diode P6042 VARO varo tripler HP-214A diode varo vf 30
Text:  VARO ÖUALITY vy VARO SO 1)^1^443333 0000^55 7 - zj^os- VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shlioh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 High Voltage Glass Diodes H1701 Designed for Integrated Flyback Transformers and Voltage Multipliers Glass Passivated Glass Encapsulated Platinum Doped Aluminum Bonded Uniform Chip-to-Chip Recovery MAXIMUM RATINGS (At , .0236+»0015 0,6 D .135 Max 3,43 169 VARO DUALITY ~5G c1443333 DGOOISh h IU a B § i- O. H O OC


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PDF H1701 HP214A P6042 varo diode High Voltage Multipliers VARO varo semiconductor Varo Semiconductor diode VARO varo tripler HP-214A diode varo vf 30
varo semiconductor

Abstract: RGPP30D VARO RGPP30G RGPP30K RGPP30J IR 9443 RGPP30B RGPP30A RGPP30M
Text: 63C 00998 D T-ol-l S" Ti ^1^443333 □□□cma T RGPP30 SERIES GLASS PASSIVATED FAST SWITCHING RECTIFIER 9443333 VARO QUALITY VARO ÖUALITY 0 VARO <3$> FEATURES • Glass passivated , voltage of 4.0 Volts 9443333 VARO QUALITY 63C 00999 D T-O^'/S VARO C2UALITY Ti 1)1^443333 dODOm 0 , . OÍ O O ■< s o 50 1 5 10 50 REVERSE VOLTAGE, VOLTS 100 VARO VARO SEMICONDUCTOR, INC , TWX: '9108605178 VARO SC GARL SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE. 12/84


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PDF RGPP30 MIL-STD-202, DO-201AD 50/100ns/cm 163135VARO varo semiconductor RGPP30D VARO RGPP30G RGPP30K RGPP30J IR 9443 RGPP30B RGPP30A RGPP30M
VARO

Abstract: varo semiconductor IR 9443 RGPP60K RGPP60J RGPP60G RGPP60D RGPP60B RGPP60A RGPP60M
Text: 9443333 VARO QUALITY 63C 01000 Î>ËJ 1443333 OOOIDDD 1 _RGPP60 SERIES GLASS PASSIVATED FAST SWITHING RECTIFIER FEATURES • Glass passivated junction • Low forward voltage • High current , 9443333 VARO QUALITY 63C 01001 D 7-03~/7 VARO ÖUALITY RATING AND CHARACTERISTIC CURVES RGPP60-SERIES , CYCLES AT 60 Hz 100 VARO VARO SEMICONDUCTOR, INC. 1000 N. SHILOH., P. 0. BOX 469013 GARLAND, TEXAS 75046-9013 PHONE: (214)271-8511 TELEX: 163135VARO UT TWX:. 9108605178 VARO SC GARL SPECIFICATIONS SUBJECT


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PDF RGPP60 MIL-STD-202, 163135VARO VARO varo semiconductor IR 9443 RGPP60K RGPP60J RGPP60G RGPP60D RGPP60B RGPP60A RGPP60M
Varo Semiconductor

Abstract: VARO varo semiconductor r C1983 C1983 20 ir 1759 SA 9013 dungs
Text:  VARO DUALITY vy VARO ~ SQ 43333 DODO1^? 0 VARO SEMICONDUCTOR, INC., P.O. Box 469013 ' 1000 N. Shiloh; Garland, Texas 75046-9013 j _(214) 271-8511 TWX 910-860-5178 ! High Voltage Rectifier H 1759 • Glass Passivated • Epoxy Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted) Repetitive Peak Reverse Voltage , ,4 MIN. D .200 DIA. 5,08 DIA. 181 VARO C3UALITY "SD 1^1^443333 □ ODD'ìBfl 5 '~r-23-0S I


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PDF r-23-0S C1983 Varo Semiconductor VARO varo semiconductor r C1983 20 ir 1759 SA 9013 dungs
varo semiconductor

Abstract: h1746 t443 VARO KP314 0T33 VARO VF 25-25 C1963 KP314A
Text:  VARO DUALITY vy VARO SD High Voltage Rectifier H 1746 Series DE J "=1443333 □□□0T33 3 VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 Januaiy1984 • Glass Passivateti • Glass Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted) SYMBOL , . 177 VARO DUALITY SD DE|T443333 DODOW S TYPICAL HIGH TEMPERATURE LEAKAGE —i


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PDF Januaiy1984 T443333 KP314 TEKTHOMXPM42 C1963 varo semiconductor h1746 t443 VARO 0T33 VARO VF 25-25 KP314A
varo semiconductor

Abstract: VARO
Text:  VARO DUALITY vy VARO _SD DF|cm43333 0G00T31 VARO SEMICONDUCTOR, INC., P.O. Box 469013 1Ó00 N. Shiloh; Garland, Texas 75046-9013 (214)271-8511 TWX 910-860-5178 High Voltage Rectifier H 1749 Series : 23 -03 January 1964 • Glass Passivated • Glass Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted , MAX. 3,43 MAX. 175 VARO DUALITY 50 DEI ^>43333 ODOD'ìSS 1 TYPICAL HIGH TEMPERATURE LEAKAGE 5


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PDF cm43333 0G00T31 WS14A KTROMXM042 varo semiconductor VARO
varo semiconductor

Abstract: VARO DLS132 PU06E
Text: : VARO DUALITY SO ȣ.1*^43333 ODOD^S 1 VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271 -8511 TWX 910-860-5178 High Voltage Rectifier H 1747 Series • Glass Passivated • Glass Encapsulated • Platinum Doped • Aluminum Bonded • Uniform Chip-To-Chip Recovery MAXIMUM RATINGS (At TA = 25°C unless otherwise noted) SYMBOL -32 -30 -28 -26 UNITS , . 179 VARO (2UALITY . -/ac SO DE|c1443333 OOOO^b 1 J . TYPICAL HGH TEMPERATURE LEAKAGE 3 i.< 3 Â


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PDF c1443333 PU06E 0-400VDC varo semiconductor VARO DLS132
Varo R711

Abstract: R712 R714X Varo R712X R711X varo semiconductor VARO R711 varo R712 R712X
Text: G VARO SEMICONDUCTOR, INC. PO. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 30AMP CENTER TAPPED SILICON INTEGRATED RECTIFIER TO-3 CASE ■Controlled Avalanche series: 250V, 450V & 650V min. avalanche ratings 0V) ■Non-controlled avalanche series: 100V, 200V, 400V , -3 dimensions and notes are applicable. Varo Part Peak Rep. Reverse Voltage Avalanche Voltage (Vea) Peak Surge , ) VARO PART NO.' PRV (Oper.) (1) | | I DC Fwd. 1 Peak Surg« ; Peak Surge 1 Current Current, 1 Currant


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PDF 30AMP Varo R711 R712 R714X Varo R712X R711X varo semiconductor VARO R711 varo R712 R712X
varo diode

Abstract: VSK330 VSK320 Varo Semiconductor diode C1983 varo semiconductor rectifier diode 6 amp 400 volt varo capacitor VARO diode VSK330
Text: o VARO T" o VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 3 Amp Schottky Barrier Rectifiers January 1960 20 Volt, 30 Volt and 40 Volt Vrrm .475 Volt Vp at iF = 3.0 Amp Very Fast Recovery Time Minimum Sized, Low Cost Epoxy Encapsulation «Y _6\e (V- MAXIMUM RATINGS (At Ta = 25°C unless otherwise noted , capacitance equal in value to the junction capacitance. See Figure 3. C1983 V«ro Semiconductor â


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PDF VSK320 VSK330 VSK340 VSK340) varo diode Varo Semiconductor diode C1983 varo semiconductor rectifier diode 6 amp 400 volt varo capacitor VARO diode VSK330
varo semiconductor

Abstract: 1N4441 IN4441 VARO VG20 VG1X VG2X IN444 m55302/131-01 VB25 Varo VG12X
Text: G VARO SEMICONDUCTOR, INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 VOLTAGE DIFFUSED SILICON RECTIFIERS Varo high voltage and high voltage fast recovery time diffused silicon rectifiers are designed for industrial and commercial applications that require high reliability at an economical cost. These rectifiers offer high voltage ranges in minimum-sized, epoxy-encapsulated packages with low leakage current. All ratings are obtained without the use of special heat sinks


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PDF VG10X VG12X VG15X VG20X lDLS-027 DLS-034 varo semiconductor 1N4441 IN4441 VARO VG20 VG1X VG2X IN444 m55302/131-01 VB25 Varo VG12X
varo vf25-25x

Abstract: VF25-30X varo vf25-10x varo vf10 VF25-25 VF25-25X VF5-20X VF5-15 VARO VF 15X VARO
Text: HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS SERIES VF D - C —[— A —I i\ -r EPOXY BODY B SILVER OR SILVER PLATED WIRES VARO Type No. Average Forward Current, @ Ta = 40°C, !o Peak Repetitive Reverse Voltage, V*rm (Volts) sîâî: Vfm (Volts) Case Style 5mA 10mA 25mA VF5- 5 VF 10- 5 VF25- 5 5,000 12 A VF5- 7 VF 10- 7 VF25- 7 7,000 12 A VF5-10 VFIO-IO VF25-10 10,000 18 A VF5-12 VF10-12 VF25-12 12,000 18 A VF5-15 VF10-15 VF25-15 15,000 35 B VF5-20 VF 10-20 VF25-20 20,000 35 B VF5


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PDF VF5-10 VF25-10 VF5-12 VF10-12 VF25-12 VF5-15 VF10-15 VF25-15 VF5-20 VF25-20 varo vf25-25x VF25-30X varo vf25-10x varo vf10 VF25-25 VF25-25X VF5-20X VARO VF 15X VARO
VS648

Abstract: vs447 VS847 Varo Semiconductor VS247 varo VS247 VJ148 VS647 Vj248 varo VS247 VS148
Text: G VARO SEMICONDUCTOR, INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS ■Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche voltage8 (Vbr) ■Non-controlled Avalanche series with 50V, 100V, 200V, 400V, 600V and 800V (VRRM) ■Fast recovery series with 200 nanosec. reverse recovery (trr). The EBR bridge rectifiers , VARO VARO SEMICONDUCTOR, INC. PO BOX 676. 1000 N. SHILOH, GARLAND, TE:X. 75040 (214)272-4551 TWX


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PDF ReJ447 DLS-042 VJ647 VJ847 VJ048 VJ148 VS648 vs447 VS847 Varo Semiconductor VS247 varo VS247 VJ148 VS647 Vj248 varo VS247 VS148
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