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Part Manufacturer Description Datasheet Download Buy Part
LT1025ACJ8 Linear Technology T.C. COLD JUNCTION COMPENSATOR
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

Unit junction transistor UJT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TN41A

Abstract:
Text: TOSHIBA TN41AJN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm APPLICATIONS • Low , ) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Gate-Cathode Forward Voltage VGKF 40 V Gate-Cathode , Operating Temperature Topr -50-100 °C Junction Temperature Tj -50-125 °C Storage Temperature Range , TN41B UNIT MIN. TYP. MAX. MIN. TYP. MAX. Peak Current (Vs = 10V) rg=imo IP 1, 2, 3 — 0.05 2 â


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PDF TN41AJN41B TN41A, TN41B 100nA TN41A 100//S 10//S TN41A ujt timer CIRCUIT PROGRAMMABLE UJT TN-41A TN41 transistor tn41a ujt timer TN41B uni junction transistor
TN41

Abstract:
Text: TOSHIBA TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR TN41AJN41B SILICON PLANAR TYPE TN41A APPLICATIONS TNZL1R Unit in mm ¿5.1 M AX. THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER , Gate-Cathode Reverse Voltage Gate-Anode Reverse Voltage SYMBOL vgkf RATING 40 -5 40 ±40 150 1 UNIT , ) Operating Temperature Junction Temperature Storage Temperature Range VGKR v GAR VAK It it m V V V mA , Voltage Pulse Voltage Rise Time SYMBOL !p vT iv ÏGAO ÏGKS VF Vo tr FIGURE No, TN41A TN41B UNIT


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PDF TN41AJN41B TN41A 100nA TN41B TN41 TN41A
scr firing circuit UJT triggering circuit

Abstract:
Text: CONVENTIONAL UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The , €”1.5V 124 Silicon Unijunction Transistors r—«i The General Electric Silicon Unijunction Transistor , —interbase voltage Tj= Junction Temperature (Degrees Kelvin) (4) The interbase resistance is nearly ohmic , \l FIG. 1 Unijunction Transistor Symbol with Nomenclature used for voltage and currents. FIG. 2 , CURRENT-Ig-MILLIAMPERES FIG. 4 Static emitter characteristics for a typical 2N1671 unijunction transistor at three


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PDF 2N489-494 2N489 2N489A 2N490 2N490A 2N490EI 2N490G 2N491 2N491A 2N491B scr firing circuit UJT triggering circuit 2N1671 2N1671A General electric SCR manual GE SCR Manual Unit junction transistor UJT ujt transistor 2n2160 unijunction application note 2N1671B
TN-41A

Abstract:
Text: TN41 A,TN41 B TO SHIBA TOSHIBA PRO GA M M ABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE , Discharge Energy (Note 2 ) Power Dissipation (Note 1 ) Operating Temperature Junction Temperature , UNIT V V V V mA 1 It m !TSM A 2 5 1.27 1. 2. 3. ANODE GATE CATHODE , iv !G A 0 !GKS VF v0 tr FIGURE No. TN41A TN41B UNIT AND TYP. MAX. MIN. TYP. MAX , €” ws^ vA = -V _ Rj ■V R1 + R 2 1± « J - Vs Fig. 1 Programmable UJT with


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PDF TN41A, TN41B TN41A 510kn TN-41A TN41A
Not Available

Abstract:
Text: DIGITRON SEMICONDUCTORS 2N5431 PN SILICON ANNULAR UNIJUNCTION TRANSITOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit PD 360 mW Ie 50 , (2) Operating junction temperature range TJ 1. 2. 3. -65 to +125 °C Tstg , (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ŋ 0.72 , 10µA and decreases with temperature at about 2.5 mV/°C. Components R1, C1 and the UJT form a


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PDF 2N5431 MIL-PRF-19500,
UJT 2N2646 specification

Abstract:
Text: unijunction transistor in 1956, General Electric has continued developing an extensive line of negative , device. PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)—variable threshold, low cost, fast switching speed , UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The TO-5 ceramic disc bar , Transistors r—«i The General Electric Silicon Unijunction Transistor is a three terminal device having , = Junction Temperature (Degrees Kelvin) (4) The interbase resistance is nearly ohmic and increases with


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PDF 2N489-494â 2N2646-47â 2N1671-2N1671A) 2N1671B) UJT 2N2646 specification 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B thyristor scr oscillator circuit uni junction transistor 2N2646 GE SCR Manual General electric SCR manual 2N4891
germanium

Abstract:
Text: Voltage, Capacity M A G N E TIC PRO PERTIES Fundamental Magnetic Relationships Transistor Operation , Multiplier, Smoothing Capacitor S P IK E S A N D SW ITCHING LOSSES Positive Spike Transistor Limits Transistor Losses S TA R TIN G C IR C U ITS Operation Configurations PRACTICAL C IR C U ITS A N D , R T E R Figure 1.1 Taken as a two port network the ability of the unit to transfer power at , maximum rated loading. As PG decreases fixed losses in the unit cause the efficiency to drop. Figure


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PDF 2924E. CA123 germanium BLY63 BUY23A epitaxial mesa gardners transformers Germanium drift transistor Germanium itt
LASCR

Abstract:
Text: perceived by a detector. Pow er radiated per unit area from a surface. M ain term inal o f a transistor w , denoted by subscript. Ä B l - radiom etric - A ngstrom , a unit o f w avelength equal to 10`10m , candela/ unit area. - radiom etric - radiant intensity o f an area source, expressed in W atts/ unit area , transistor . See h FE. - inter-elem ent capacitance, prim arily ju n ctio n cap acitan ce, o f a com ponent , density incident on a receiver, usually in lum ens p e r unit o f surface. - radiom etric - Irradiance


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PDF
UJT 2N4871

Abstract:
Text: ) Unit Ie RMS emitter current Value PD (1) 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage †VB2B1 35 Volts Operating junction temperature , (VB2B1 = 3.0V, IE = 0) Min Typ Max Unit η 0.56 0.70 - 0.75 0.85 - 4.0 , temperature at about 2.5mV/°C. Components R1, C1, and the UJT form a relaxation oscillator; the remaining


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PDF 2N4870-2N4871 04mW/Â 10PPS. UJT 2N4871
MBD702

Abstract:
Text: Symbol Value Unit Reverse Voltage MBD502 MBD702 VR 50 70 Volts Forward Power Dissipation @ T/y = 25°C Derate Above 25°C Pf 400 4.0 mW mW/°C Operating Junction Temperature Range Tj -55 to +125 °C Storage , CHARACTERISTICS (TA = 25°C unless otherwise noted) ¿jT C 1 A -«- - a D t L -L — s - jrr a , Characteristic Symbol Min Typ Mas Unit Reverse Breakdown Voltage (Ir = 10*i Adc) MBD502 MBD702 V(BR)R 50 70 - -


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PDF MBD502 MBD702 MountinD502, MBD702 MBD502
UJT-2N2646 PIN DIAGRAM DETAILS

Abstract:
Text: €” Triac ■OK — o MT1 OB2 Unijunction transistor ( UJT ) OB1 Programmable unijunction , Quadrants Since both the junction leakage currents and the cur­ rent gain of the " transistor " elements , Unijunction Transistor Applications. 1-6-37 Heater Control , Unijunction Transistor (PUT) Applications. 1-6-48 VC Ramp , Drivers. . . The Unijunction Transistor . Programmable Unijunction


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PDF Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr 1000w inverter PURE SINE WAVE schematic diagram triac ot 239 c107m TRANSISTOR equivalent UJT pin diagram 2N2646 TY6008 diffused alloy class d 1000w amplifier 2N6146
LA 7809

Abstract:
Text: Ordering number: EN 1789B No.l789B 2SK545 N-Channel Junction Silicon FET Impedance , compact. Absolute Maximum Ratings at Ta = 25°C unit Drain-to-Source Voltage Vdss 40 V Gate-to-Drain Voltage Vgds -40 V Gate Current Ig 10 mA Drain Current Id 1 mA Power Dissipation Pd 125 mW Junction , = 0,f=lMHz Crss VDS = IOV.Vgs = 0, f= 1MHz min typ max unit -40 V -500 pA -1.5 -4.0 30* 0.05 0.13 1.7 0.7 300* V ]xA mS pF pF SK The 2SK545 is classified by loss as follows ( unit : juA) 30


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PDF 1789B l789B 2SK545 2SK545-applied LA 7809 2SK545
2005 - UJT 2N2646

Abstract:
Text: more ions/ unit volume in the less resistive material. A junction that results in a narrow depletion , junction . Such a junction is responsible for the action of both zener diodes and rectifier devices, and , electrical properties are derived from a rectifying junction which operates in the reverse breakdown region. In the sections that follow, the reverse biased rectifying junction , some of the terms associated , diode is a semiconductor PN junction . PN junctions are formed in various kinds of semiconductor


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PDF HBD854/D Jun-2005 DL150/D NLAS3158/D UJT 2N2646 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
NR-SD-12V

Abstract:
Text: types are driven by transistor or UJT , residual voltage is sometimes applied to the Coil voltage wave , at N.O. side even if the transistor or UJT are in OFF condition. As a result, characteris- Short , , transport and temp. storage*9 (Not freezing and condensing Humidity at low temperature) Unit weight , . In a timer circuit, step-pulse voltage from PUT (Programmable Unijunction Transistor ) or SBS


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PDF
ujt timer CIRCUIT

Abstract:
Text: circuit Residual voltage When single side stable types or latching types are driven by transistor or UJT , residual voltage is sometimes applied to the coils and decreases contact pressure at N.O. side even if the transistor or UJT are in OFF condition. As a result, characteristics of relays may be , , Ambient transport and storage*9 temp. (Not freezing and condensing at low temperature) Humidity Unit , . In a timer circuit, step-pulse voltage from PUT (Programmable Unijunction Transistor ) or SBS


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PDF E43149 LR26550 ujt timer CIRCUIT rsd-12v RSL2D rsd 24v latching operation of ujt ujt operation of principle MATSUA rsd-12v applications of ujt with circuits ujt timer applications of ujt
RSL2D

Abstract:
Text: Transistor ) or SBS (Silicon Bilateral Switch) is recommended. l-sw R relay contact I R relay coil Residual voltage When single side stable types or latching types are driven by transistor or UJT , residual , transistor or UJT are in OFF condition. As a result, charac teristics of relays may be harmed. Design your , operation, transport and storage*9 (Not freezing and condens ing at low temperature) Unit weight Ambient


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PDF E57521 LR26550 RSL2D transistor a110 latching operation of ujt r relay
NR-SD-12V

Abstract:
Text: types are driven by transistor or UJT , residual voltage is sometimes applied to the Coil voltage wave , at N.O. side even if the transistor or UJT are in OFF condition. As a result, characteris- Short , , transport and temp. storage*9 (Not freezing and condensing Humidity at low temperature) Unit weight , . In a timer circuit, step-pulse voltage from PUT (Programmable Unijunction Transistor ) or SBS


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PDF
1999 - rsd 24v

Abstract:
Text: stable types or latching types are driven by transistor or UJT , residual voltage is sometimes applied to the coils and decreases contact pressure at N.O. side even if the transistor or UJT are in OFF , , Ambient transport and storage*9 temp. (Not freezing and condensing at low temperature) Humidity Unit , from PUT (Programmable Unijunction Transistor ) or SBS (Silicon Bilateral Switch) is recommended


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PDF E43149 LR26550 rsd 24v RSD-12V RSL2D ujt operation of principle latching operation of ujt ujt timer CIRCUIT NR-SD-12V ujt free r relay MATSUA rsd-12v
2001 - UJT 2N2646 specification

Abstract:
Text: 20 RqJL IFSM TJ, Tstg 20 200 ­ 65 to +175 Unit Watts Watts mW/°C °C/W Amps °C ORDERING INFORMATION , , JUNCTION TO AMBIENT (°C/W) The power dissipation for a surface mount device is a function of the drain , rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient , , AREA (SQUARE INCHES) 0.8 1.0 80 RJA , THERMAL RESISTANCE, JUNCTION TO AMBIENT (°C/W) The , RESISTANCE, JUNCTION TO AMBIENT (°C/W) The 156°C/W for the SOT­223 package assumes the use of the


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PDF 1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS DO41 PACKAGE diode marking S6 UJT 2N2646 sine wave UPS inverter circuit diagram
2001 - UJT 2N2646 specification

Abstract:
Text: of more ions/ unit volume in the less resistive material. A junction that results in a narrow , = 75°C Measured Zero Lead Length (Note 2.) Derate Above 75°C Thermal Resistance from Junction to Lead DC Power Dissipation (Note 3.) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to , . Symbol PPK PD Value 400 1.5 20 50 0.5 4.0 250 40 ­65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W A °C , . Pulse Derating Curve Figure 4. Typical Junction Capacitance PD , MAXIMUM POWER DISSIPATION (WATTS


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PDF
LG color tv Circuit Diagram schematics

Abstract:
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE , . AUSTRALIA, Texas Instruments Australia Ltd: Unit 1A. 5 Bylield St. P.O. Box 106. North Ryde. NSW 2113


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PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
AD2S46

Abstract:
Text: Junction Temperature.15CTC SI, S2, S3, S4 (Line to Line)1 (90 V Option , that the junction temperature of the hottest component within the hybrid does not exceed the rated , , the 3-wire synchro output will be connected to SI, S2 and S3 on the unit and a solid-state Scott-T , signal, and K is the transformation ratio of the input signal conditioner. If the unit is a resolver-to digital converter, the 4-wire resolver output will be connected directly to SI, S2, S3 and S4 on the unit


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PDF 16-Bit AD2S46 28-Pin 16-bit, AD2S65/66 DRC1745/46 AD2S44 twist drc1745 drc1746 ujt operation of principle
2001 - UJT 2N2646

Abstract:
Text: to +200 Unit W mW/°C °C L = Assembly Location BZX85Cxxx = Device Code = (See Table Next Page) Y = , necessary to determine junction temperature under any set of operating conditions in order to calculate its , LAPD + TA. TJL is the increase in junction temperature above the lead temperature and may be found , steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be , considering only junction temperature, as current crowding effects cause temperatures to be extremely high in


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PDF BZX85C3V3RL DO-41 204AL) UJT 2N2646 UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW varistor pdz 320 pin diagram of UJT-2N2646 BZX 460 zener diode 1N4742A 12 volt zener diode
2N4947

Abstract:
Text: General-Purpose UJT Applications 2N4947 for High-Frequency Relaxation-Oscillator Circuits 2N4948 for Thyristor , UNIT kn %/deg It = 0 Sn Noi. 4 9.1 0.9 0.(9 4 0.1 12 09 4 0.1 0.74 12 12 0.9 , it sho w n in the figure. In this cir cuit, R, C, ond the unijunction transistor form a relaxation


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PDF 2N4947 2N4949 2N3980 2N4948 PR00UCT equivalent diode for 1n457 1N457 equivalent ujt free
comport

Abstract:
Text: ]]a I I ~1~2~| 2Q 2Cext (T a « CLR *1 TT] 2CLR IH«, rr e.« l_ GND[~T UJt ~10~| 2B "T| 2A , ¡FUNCTION TABLE Item Symbol min typ max Unit Input pulse width A, B "H" 40 - - ns ■L" i*,.! 40 - - , ■ELECTRICAL CHARACTERISTICS ( Ta= -20- +75°C ) Item Symbol Test Conditions min typ* max Unit Input voltage , =25°C ) Item Symbol Inputs Outputs Test Conditions min typ max Unit Propagation delay time tPLH A Q C„i =


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PDF HD74LS123. QQ14CI14 DG-14 06max 20-IU8 OG-16 DG-24 comport UJT APPLICATION HD74LSoop applications of ujt 74LSOO applications of ujt with circuits HD74LS123
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