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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BQ294532DRVT BQ294532DRVT ECAD Model Texas Instruments Overvoltage Protection Device for 2- to 3-Cell Li-Ion Batteries, with 4.50v OVP 6-WSON -40 to 85
NE5532D NE5532D ECAD Model Texas Instruments Dual Low-Noise High-Speed Audio Operational Amplifier 8-SOIC 0 to 70
NE5532DG4 NE5532DG4 ECAD Model Texas Instruments Dual Low-Noise High-Speed Audio Operational Amplifier 8-SOIC 0 to 70
SA5532D SA5532D ECAD Model Texas Instruments Dual Low-Noise Operational Amplifier 8-SOIC -40 to 85
NE5532DR NE5532DR ECAD Model Texas Instruments Dual Low-Noise High-Speed Audio Operational Amplifier 8-SOIC 0 to 70
SA5532DE4 SA5532DE4 ECAD Model Texas Instruments DUAL OP-AMP, 5000uV OFFSET-MAX, 10MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8
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Advantech Co Ltd
UTC-532D-PE Advantech Ubiquitous Touch Computer UTC-532D - All-in-one - 1 x Celeron J1900 / 2 GHz - RAM 4 GB - no HDD - GigE - no OS - monitor: LCD 32" 1920 x 1080 (Full HD) touchscreen
UTC-532D-PE ECAD Model
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Advantech Co Ltd
UTC-532DP-EPB0E 31.5IN PCT T/S J1900 4G 64G SSD WIN 10
UTC-532DP-EPB0E ECAD Model
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NAC UTC-532DP-EPB0E 0 1 - - - - - Get Quote

UTC-532D-PE datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
UTC-532D-PE UTC-532D-PE ECAD Model Advantech Uncategorized - Miscellaneous - 32" PCT.T/S PANEL WITH BAYTRAIL Original PDF

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Catalog Datasheet MFG & Type PDF Document Tags
CST-532D

Abstract: CST-533D
Text: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.56 inch (14.2mm) Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit TRIAD DIGIT DISPLAY CST- 532D /533D Model no. § CST- 532D /533D Super Bright Red (GaAlAs/GaAs,DH) Description § § CST- 532D is common anode CST-533D is common cathode CST-L532D/L533D GENERAL SPECIFICATIONS Absolute Maximum Ratings ( TA25) Super-Bright Red (DH) Power


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PDF CST-532D/533D CST-532D/533D CST-532D CST-533D CST-L532D/L533D 0-04-A
2004 - Not Available

Abstract: No abstract text available
Text: s 0m 10 ms 10 Pc -Ta 25 20 1ms D Collector Current, IC- A C DC O r pe O pe ra


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PDF 2SD1816 O-252 QW-R209-011
2003 - utc 2sd1804

Abstract: No abstract text available
Text: Current, IC- A C D O t ra pe 100ms 0.1 7 5 3 Tc=25,One Pulse For 2 PNP,minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Colletcor to Emitter Voltage,VCE-V C D O ra pe tio n io Tc 5


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PDF 2SD1804 O-252 100ms QW-R209-006 utc 2sd1804
2004 - Not Available

Abstract: No abstract text available
Text: Collector Dissipation,Pc -W 20 16 12 8 4 1 00 Ic Collector Current, IC- A D C O n tio ra pe , notice. C D O ra pe tio a= nT 2 3 = Tc 25 25 5 7 10 2 3 5 7100 No heat sink 20 40 60 80 100


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PDF 2SD1803 O-252 QW-R209-014
2004 - Not Available

Abstract: No abstract text available
Text: Current, IC- A C D O t ra pe 100ms 0.1 7 5 3 Tc=25,One Pulse For 2 PNP,minus sign is omitted , . C D O ra pe tio n io Tc 5 =2 2 3 5 7100 25 a= nT No heat sink 20 40 60 80 100 120 140 160


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PDF 2SD1804 O-252 QW-R209-006
2003 - Not Available

Abstract: No abstract text available
Text: Current, IC- A 1ms C 100ms 20 O n tio ra pe 16 tio a= nT ℃ 25 ra pe


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PDF 2SD1803 O-251 100ms QW-R213-007
2003 - Not Available

Abstract: No abstract text available
Text: Collector Dissipation,Pc -W 20 16 12 8 4 1 00 Ic Collector Current, IC- A D C O n tio ra pe 100ms 0.1 7 5 3 2 Tc=25 0.01 0.1 2 3 5 7 1.0 Colletcor to Emitter Voltage,VCE-V C D O ra pe tio


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PDF 2SD1803 O-252 100ms QW-R209-014
2003 - 2SD1816

Abstract: TA7523
Text: a= 25 ) ) 25 c= 0.1 (T pe ra tio n n io at O r pe DC 1.0 5


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PDF 2SD1816 O-252 QW-R209-011 2SD1816 TA7523
Not Available

Abstract: No abstract text available
Text: OPERATING AREA 30 t=1mS * 10mS * 100mS * 10 * S AT 0m R 50 PE 5 O =2 C Tc D ° 3


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PDF 2SD718 2SB688. QW-R214-003
2004 - transistor 2sd718

Abstract: 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
Text: 0m R 50 PE 5 O =2 C Tc D ° 3 N O IC COLLECTOR CURRENT, Ic (A) 0.3 1


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PDF 2SD718 2SB688. QW-R214-003 transistor 2sd718 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
2013 - Not Available

Abstract: No abstract text available
Text: Emitter Saturation Voltage, VBE(sat) (V) C O pe t ra io nT 25 c= C 25 a= nT tio ra pe


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PDF 2SD1803 2SD1803 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T O-251 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R O-252 2SD1803L-x-TN3-T 2SD1803G-x-TN3-T
2008 - 2SD1803

Abstract: 2SD1803-x-TN3-R QW-R209-014
Text: (sat) (V) ra pe O pe O t ra nT io 25 c= nT tio C 25 a= Power Dissipation


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PDF 2SD1803 2SD1803 2SD1803L 2SD1803-x-TM3-T 2SD1803L-x-TM3-T 2SD1803-x-TN3-R 2SD1803L-x-TN3-R 2SD1803-x-TN3-T 2SD1803L-x-TN3-T O-251 2SD1803-x-TN3-R QW-R209-014
2010 - 2SD1803

Abstract: 2sd1803 transistor
Text: 2SD1803 NPN SILICON TRANSISTOR Base to Emitter Saturation Voltage, VBE(sat) (V) C O pe t ra io nT 25 c= C 25 a= nT tio ra pe O C Power Dissipation, PD (W) D C D


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PDF 2SD1803 2SD1803 2SD1803-x-TM3-T 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T 2SD1803-x-TN3-R 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R 2SD1803-x-TN3-T 2SD1803L-x-TN3-T 2sd1803 transistor
2015 - Not Available

Abstract: No abstract text available
Text: CHARACTERICS(Cont.) Base to Emitter Saturation Voltage, VBE(sat) (V) C O pe t ra io nT 25 c= C 25 a= nT tio ra pe O C Power Dissipation, PD (W) D C D Collector Current, IC (A


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PDF 2SD1803 2SD1803 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T O-251 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R O-252 2SD1803G-x-K08-5060-R QW-R209-014
2011 - 7001 transistor npn

Abstract: 2SD1804
Text: Collector Dissipation, PC - W 1ms 20 16 12 8 4 1 00 10ms C Collector Current, IC - A 100ms O pe , www.unisonic.com.tw D C O r pe io at Ta n =2 TC 5 No heat sink 160 20 40 60 80 PD -Ta 100 120 140 5 of 5


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PDF 2SD1804 O-252 2SD1804 O-251 O-220 2SD1804L-x-TA3-T 2SD1804G-x-TA3-T 2SD1804L-x-TM3-T 2SD1804G-x-TM3-T 2SD1804L-x-TN3-R 7001 transistor npn
2009 - 7001 transistor npn

Abstract: 2SD1804 QW-R209-006
Text: () 24 1ms D IC C O 100ms pe n tio ra C =2 TC O io at 5 r pe Ta


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PDF 2SD1804 2SD1804L 2SD1804G 2SD1804-x-TM3-T 2SD1804-x-TN3-R 2SD1804L-x-TM3-T 2SD1804G-x-TM3-T 2SD1804L-x-TN3-R 2SD1804G-x-TN3-R 7001 transistor npn 2SD1804 QW-R209-006
2013 - VAL-CP-3S-350

Abstract: No abstract text available
Text: P6 COM2 Shield DD+ Shield POWER LINE EMI FILTER L N PE P10 EXT. PHOTO CELL P9 GSM PHONE L N PE L N PE POWER LINE EMI FILTER SW1 L N PE SW2 SW3 OVER , COM NC P7 ALARM RELAY POWER SUPPLY 0V +12V out DD+ Shield NO ALARM L N PE ALARM PS 24V FIBER ETH L N PE FIBER ETH PX MAIN POWER 1 - L1 2 - L2 3 - L3 4-N 5 - PE PX LH 1 INTERFACE 1 - 1. V+ 2 - 1. V 3 - 1. PE 4 - 2. V+ 5 - 2. V 6 - 2. PE 7 - 3. V +


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PDF FI-00380 VAL-CP-3S-350
2004 - BF423

Abstract: No abstract text available
Text: PE RA -10 TI ON 1m -50 s s m 10 Collector Power Dissipation Pc (mW) PNP


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PDF BF423 -250V. QW-R201-058 BF423
T-532G-11

Abstract: 3G11 544y
Text: I Polarity Device Package Outline (Q S' s o © (¡Q * - Super-bright Red (D) \ p = 6 6 0 nm Red (R)/ Bright Red (H) Xp = 6 5 5 /6 9 5 nm Orange (E)/ Amber (A) Xp = 6 3 5 /6 1 0 nm Yellow (Y )/Super/ Bright Yellow (T) Xp = 5 9 0 /5 8 5 nm Green (G )/ Bright Green (F) Device Package mm (inch) | Xp= 5 7 0 /5 7 0 nm Drawing CSD-5622R-21 A C S D -56 22 D -2 1 "'"SÇ Sr 14.2 0.56) C C SD -5623D -21 CSD -5623H -21 CST-532R-21 A C S T- 532D -21 14.2 V*- CSD-5622E-1 1 CSD


OCR Scan
PDF CSD-5622R-21 -5623D -5623H CST-532R-21 T-532D CSD-5622E-1 CSD-5622Y-1 -5622G CSD-5623Y-1 CSD-5623A-1 T-532G-11 3G11 544y
2013 - TO126 transistor

Abstract: No abstract text available
Text: (Continuous) D C O s 5m g tin ra pe 20 1.0 0.5 0.3 TO-252 10 TO-126 0 150 50 100 Case


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PDF TIP31C TIP31C TIP32C. TIP31CL-TA3-T TIP31CG-TA3-T TIP31CL-T60-K TIP31CG-T60-K TIP31CL-T6S-K TIP31CG-T6S-K TIP31CL-TN3-R TO126 transistor
2004 - Not Available

Abstract: No abstract text available
Text: (CONTINUOUS) 10 * S AT 0m R 50 PE 5 O =2 C Tc D ° 3 N O IC COLLECTOR CURRENT


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PDF 2SD718 2SB688. QW-R214-003
2009 - tip31cg

Abstract: TIP31C utc tip31cl TIP32C TIP31CG-T60-B TIP31CL
Text: tin ra pe Power Dissipation, PD(W) s 5m O 10 C TO-252 D 20 TO-220 Ic


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PDF TIP31C TIP31C TIP32C. TIP31CL TIP31CG TIP31C-T60-B TIP31C-TA3-T TIP31C-TN3-R TIP31CL-T60-B TIP31CL-TA3-T tip31cg utc tip31cl TIP32C TIP31CG-T60-B TIP31CL
2013 - Not Available

Abstract: No abstract text available
Text: tin ra pe 10 O TO-252 C 20 s 5m TO-220 Ic MAX. 3.0 (Continuous) s 1m


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PDF TIP31C TIP31C TIP32C. TIP31CL-TA3-T TIP31CG-TA3-T TIP31CL-T60-K TIP31CG-T60-K TIP31CL-T6S-K TIP31CG-T6S-K TIP31CL-TN3-R
2008 - TIP31C

Abstract: TIP31cL TRANSISTOR TIP31C TIP32C
Text: Safe Operating Area Power Derating 10 40 Collector Current, IC (A) g tin ra pe Power


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PDF TIP31C TIP31C TIP32C. TIP31CL TIP31C-T60-B TIP31CL-T60-B TIP31C-TA3-T TIP31CL-TA3-T TIP31C-TM3-T TIP31CL-TM3-T TIP31cL TRANSISTOR TIP31C TIP32C
2013 - Not Available

Abstract: No abstract text available
Text: I T Y AN D T Y PE PART NUMBER VOLTAGE 600V 800V B BW C CW SW TW : Available


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PDF BTA12 BTA12 BTA12L-x-xx-TF3-T BTA12G-x-xx-TF3-T O-220F QW-R401-026
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