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USFB13 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
USFB13A USFB13A ECAD Model Korea Electronics SCHOTTKY BARRIER TYPE DIODE Original PDF

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USFB13

Abstract: Device Marking A3 A301
Text: SEMICONDUCTOR USFB13 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 A3 0 1 1 CATHODE MARK No. Item Marking Description Device Mark A3 USFB13 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B (2


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PDF USFB13 USFB13 Device Marking A3 A301
amoled

Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
Text: Item SBD POWER KDR70F/V/E, KDR729, USFB13 /L, SMFB14 MOSFET KMA2D4P20S, KMA2D3P20S Load , Item SBD POWER KDR70F/V/E, KDR729, USFB13 /L, SMFB14 MOSFET KMA2D4P20S, KMA2D3P20S Load


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PDF KDS160F/V/E, KDS12V/E, KDR70F/V/E KMA2D4P20S, KMA2D3P20S KDZ33EV KRC28U KRC68T) amoled 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
2007 - USFB13

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM , 2005. 12. 1 Revision No : 0 1/2 USFB13 CJ 1000 JUNCTION CAPACITANCE CJ (pF


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PDF USFB13 USFB13
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM , . 12. 1 ) Revision No : 0 1/2 USFB13 CJ 1000 JUNCTION CAPACITANCE CJ (pF


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PDF USFB13
khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: No file text available


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PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: No file text available


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PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: No file text available


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PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: No file text available


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PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: No file text available


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2010 - USFB13A

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13A TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. C E F For Use in Low Voltage, High Frequency inverters, Free 2 C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J , =1.0MHz - 40 - pF 1/2 USFB13A I F - VF IR - Tj 100 900 REVERSE CURRENT IR (mA


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PDF USFB13A USFB13A
2004 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B FEATURES G F A Low Profile Surface Mount Package. C 1 2 Wheeling, and Polarity Protection Applications. D C E For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. CATHODE MARK APPLICATION I H Switching , 0 0.2 0.4 0.6 0.8 1.0 AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) USFB13L


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PDF USFB13L 50mmx50mm)
2007 - usfb13l

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D , FORWARD POWER DISSIPATION P F(AV) (W) USFB13L P F(AV) - I F(AV) 0.5 DC 0.4 180 120 0.3 , 100 0 25 50 75 100 125 150 JUNCTION TEMPERATURE Tj ( C) 2/3 USFB13L


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PDF USFB13L usfb13l
USFB13A

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13A TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM , Revision No : 1 1/2 USFB13A I F - VF IR - Tj 100 REVERSE CURRENT IR (mA) FORWARD CURRENT


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PDF USFB13A USFB13A
mark Bb

Abstract: e5 marking
Text: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date (Year/Week) Note) * Lot No. marking method Year Periode (Year) Remark 01 : 2002. 1st Week, 02 : 2002. 2nd Week 01, 02 .51, 52 51 : 2002. 51th Week, 52 : 2002. 52th Week. 0A : 2003. 1st Week, 0B : 2003. 2nd Week 0A


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PDF USFB13L mark Bb e5 marking
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D , DISSIPATION P F(AV) (W) USFB13L P F(AV) - I F(AV) 0.5 DC 0.4 180 120 0.3 α=60 0.2 , 50 75 100 125 150 JUNCTION TEMPERATURE Tj ( C) 2/3 USFB13L PR (AV) 10000


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PDF USFB13L
2005 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B USFB13L SCHOTTKY BARRIER TYPE DIODE FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. D A F G C D E For Use in Low Voltage, High Frequency inverters, Free Wheeling, and , 2005. 8. 18 Revision No : 1 C 1/3 USFB13L AVERAGE FORWARD POWER DISSIPATION P F(AV) (W , Revision No : 1 2/3 USFB13L rth(j-a) - t Transient thermal impedance rth (j-a) ( C /W) PR (AV


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PDF USFB13L
2012 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A USFB13A SCHOTTKY BARRIER TYPE DIODE G H FEATURES ·Low Profile Surface Mount Package. ·Low Power Loss, High Efficiency. ·For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. F E 2 1 CATHODE MARK C E D C APPLICATION ·Switching Power Supply. ·Reversed Battery , . 5 40 MAX. 0.45 0.52 50 UNIT V V A pF 2007. 5. 11 Revision No : 1 1/2 USFB13A I F -


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PDF USFB13A
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR USFB13A TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES 2007. 5. 11 Revision No : 1 1/2 -


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PDF USFB13A
2007 - Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A USFB13A SCHOTTKY BARRIER TYPE DIODE G H FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. F E 2 1 CATHODE MARK C E D C APPLICATION Switching Power Supply. Reversed Battery Connection , Cj VRRM=30V VR=10V, f=1.0MHz 2007. 5. 11 Revision No : 1 1/2 USFB13A I F - VF 1000


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PDF USFB13A
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