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California Eastern Laboratories (CEL)
UPA812T-T1-A Trans GP BJT NPN 10V 0.065A 6-Pin SOT-363 T/R - Tape and Reel (Alt: UPA812T-T1-A) UPA812T-T1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet UPA812T-T1-A Reel 3,000 3,000 - - - - - More Info
NEC Electronics Group
UPA812T-T1 UPA812T-T1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics UPA812T-T1 78,302 - - - - - More Info

UPA812T datasheet (11)

Part ECAD Model Manufacturer Description Type PDF
UPA812T UPA812T ECAD Model Others SMD, High Frequency Amplifier, 20V 65mA 110mW, Silicon NPN Transistor (integrated circuit) Original PDF
UPA812T UPA812T ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD Original PDF
uPA812T uPA812T ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4227) SMAL Original PDF
UPA812T-A UPA812T-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 7GHZ SOT363 Original PDF
uPA812TFB-T1 uPA812TFB-T1 ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4227) Small Mini Mold Original PDF
uPA812TGB uPA812TGB ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4227) Small Mini Mold Original PDF
uPA812TGB-T1 uPA812TGB-T1 ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4227) Small Mini Mold Original PDF
UPA812T-T1 UPA812T-T1 ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD Original PDF
uPA812T-T1 uPA812T-T1 ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4227) SMAL Original PDF
UPA812T-T1-A UPA812T-T1-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 7GHZ SOT363 Original PDF
UPA812T-T1-A UPA812T-T1-A ECAD Model California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

UPA812T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Not Available

Abstract: No abstract text available
Text: UPA812T-T1 , 3K per reel. California Eastern Laboratories UPA812T TYPICAL PERFORMANCE CURVES (TA = 25Â , (mA) ORDERING INFORMATION PART NUMBER UPA812T-T1 QUANTITY 3000 PACKAGING Tape & Reel , NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS (Units in mm) FEATURES , UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT , PARAMETERS AND CONDITIONS UPA812T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at


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PDF UPA812T NE681 UPA812T UPA812T-T1 24-Hour
1999 - NE681

Abstract: S21E UPA812T UPA812T-T1 DSA00206877
Text: terminal capacitance bridge. For Tape and Reel version use part number UPA812T-T1 , 3K per reel , NUMBER UPA812T-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR , at 1 GHz · HIGH GAIN BANDWIDTH: fT = 7 GHz · UPA812T LOW CURRENT OPERATION 1 6 2 5 3 0.65 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 The UPA812T is two , UPA812T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA


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PDF NE681 UPA812T UPA812T UPA812T-T1 24-Hour S21E UPA812T-T1 DSA00206877
Not Available

Abstract: No abstract text available
Text: terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA812T-T1 , 3K per reel. UPA812T TYPICAL PERFORMANCE CURVES (Ta = 2 5 °q TOTAL POWER DISSIPATION vs. AMBIENT , NUMBER QUANTITY PACKAGING UPA812T-T1 3000 Tape & Reel 3-266 , Leads) DESCRIPTION The UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated , PACKAGE OUTLINE SYMBOLS ICBO Ie b o hFE 1 fT UPA812T S06 UNITS HA PARAMETERS AND CONDITIONS MIN


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PDF NE681 UPA812T UPA812T-T1
1997 - nec 772

Abstract: 2SC4227
Text: 3 V, IC = 7 mA · High Gain µPA812T-T1 Taping products (3 KPCS/Reel) Embossed tape 8 mm , . PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 low-voltage , PCS) 0 to 0.1 µPA812T PACKING STYLE 0.15 ­0 QUANTITY 0.7 PART NUMBER 0.9±0.1 , © 1995 µPA812T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN


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PDF
Not Available

Abstract: No abstract text available
Text: NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain µPA812T-T1 Taping products , PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 , NEC Sales +0.1 Loose products (50 PCS) 0 to 0.1 µPA812T PACKING STYLE 0.15 â , June 1996 P Printed in Japan © 1995 µPA812T ELECTRICAL CHARACTERISTICS (TA = 25 °C


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PDF PA812T 2SC4227) PA812T PA812T-T1
1997 - 2SC4227

Abstract: 1 928 403 698
Text: f = 1 GHz, VCE = 3 V, IC = 7 mA · High Gain µPA812T-T1 Taping products (3 KPCS/Reel , PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 , Loose products (50 PCS) 0 to 0.1 µPA812T PACKING STYLE 0.15 ­0 QUANTITY 0.7 PART , Printed in Japan © 1995 µPA812T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL


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PDF PA812T 2SC4227) PA812T PA812T-T1 2SC4227 1 928 403 698
Not Available

Abstract: No abstract text available
Text: capacitance bridge. For Tape and Reel version use part number UPA812T-T1 , 3K per reel. UPA812T TYPICAL , Current, lC (mA) ORDERING INFORMATION PART NUMBER UPA812T-T1-A QUANTITY 3000 PACKAGING Tape & , SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · SMALL , 1.3 0.65 1 6 5 0.2 (All Leads) The UPA812T is two NPN high frequency silicon epitaxial , 0.9 MIN UPA812T S06 TYP MAX 0.8 0.8 240 |S21E|2 Notes: 1. Pulsed measurement, pulse width 350 s


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PDF UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour
transistor 24 GHz

Abstract: 10 ghz transistor NE681 S21E UPA812T UPA812T-T1 8003* transistor
Text: UPA812T-T1 , 3K per reel. California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF , PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA812T OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package · LOW , The UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 , UPA812T S06 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff


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PDF UPA812T NE681 UPA812T UPA812T-T1, 24-Hour transistor 24 GHz 10 ghz transistor S21E UPA812T-T1 8003* transistor
2005 - NE681

Abstract: S21E UPA812T UPA812T-T1 UPA812T-T1-A
Text: terminal capacitance bridge. For Tape and Reel version use part number UPA812T-T1 , 3K per reel , NUMBER UPA812T-T1-A QUANTITY 3000 PACKAGING Tape & Reel Life Support Applications These NEC , at 1 GHz · HIGH GAIN BANDWIDTH: fT = 7 GHz · UPA812T LOW CURRENT OPERATION 1 6 2 5 3 0.65 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 NEC's UPA812T is two , UPA812T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA


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PDF NE681 UPA812T UPA812T S21E UPA812T-T1 UPA812T-T1-A
Not Available

Abstract: No abstract text available
Text: term inal capacitance bridge. For Tape and Reel version use part number UPA812T-T1 , 3K per reel. EXC , 12 dB TYP at 1 GHz HIGH GAIN BANDW IDTH: f r = 7 GHz LOW CURRENT OPERATION 2.0 ± 0.2 UPA812T , UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT , ICBO Ie b o hFE1 UPA812T S06 UNITS HA HA PARAMETERS AND CONDITIONS Collector Cutoff Current at


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PDF NE681 UPA812T UPA812T UPA812T-T1, 24-Hour
Not Available

Abstract: No abstract text available
Text: = 3 V, IC = 7 mA • High Gain µPA812T-T1 Taping products (3 KPCS/Reel) Embossed tape 8 , TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are , products (50 PCS) 0 to 0.1 µPA812T PACKING STYLE 0.15 –0 QUANTITY 0.7 PART NUMBER , Printed in Japan © 1995 µPA812T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL


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UPA801T

Abstract: UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T RL PART NUMBER UPA809T +0.1 0.15 -0.5 MARKING T88 UPA801T R24, R25 UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
UPA802T

Abstract: BD304 NE02132
Text: 352 353 354 355 a 3 2 2 3 3 3 3 3 UPA811T NE\^ UPA812T NEW / UPA814T MICRO-X NE02135 NE68035


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132
2003 - UPA802T

Abstract: RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 UPA808T transistor RF S-parameters cascode transistor array
Text: 1.2@1 GHz 9.0@1 GHz UPA802T/ UPA812T 9.0 65 1.4@1 GHz 12.0@1 GHz UPA800T/UPA811T 10.0


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PDF AN1028 UPA808T UPA802T RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 transistor RF S-parameters cascode transistor array
UPA833TF

Abstract: UPA831TF UPA802T UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Text: Low N oise Bipolar Transistors * VCE Ic TYP TYP (V) DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1) UPA833TF (Q2) UPA834TF (Q 1) UPA834TF (Q2) UPA835TF (Q1) UPA835TF (Q2) UPA836TF (Q 1) UPA836TF (Q2) MICRO-X NE02135 NE68035 NE68135 NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA833TF UPA831TF UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
NE68018

Abstract: 814T
Text: : UPA801T UPA 802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T U PA 814T r ïü w o iN E V n


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PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T
2SC5743

Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Text: µPA812T 2SC5007 µPA822TF µPA803T 2SC5005 µPA813T 2SC5005 µPA804T, 2SC5004


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: -363 UPA812T 1.0 3 NE680 7 1.4 14.0 16.0 3 7 12.0 7.0 100 65 S06 SOT


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
uPA63

Abstract: UPA827TF UPA831TF NE685
Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP (GHz) (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening Oto Page Number DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685
613 GB 123 CT

Abstract: No abstract text available
Text: (Q2 Em itter) face to perforation side of the tape. , uPA812T-T1 Taping products (3 KPCS/Reel , PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4227) SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to am plify low noise in the VHF band to the UHF band. PACKAGE D R A W IN G S (U n it: m m ) 2 . 110.1 1.25±0.1 FEATURES · Low Noise NF = 1.4 dB TYP. @ f = 1


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PDF uPA812T 2SC4227) /xPA812T 613 GB 123 CT
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: µPA805T µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , µPA808T µPA809T, TF Package size µPA811T µPA810T,TC,TF µPA812T µPA813T µPA821TC, TF 2SC5006


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
1993 - transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
Text: µPA808T µPA811T µPA810T µPA812T µPA813T for Mobile Communications 2SC No. (×2) Part No , 5 80 250 3 5 - 3 0 1 µPA812T 2SC5433 20 10 1.5 200 65


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PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , 2SC5006 2SC5195 2SC5195 2SC5186 2SC5006 2SC5007 µPA802T µPA803T 2SC5007 2SC5005 µPA812T µPA813T


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: BF772 NE85639 Closest Philips BFC505 UPA811T Closest Philips BFC520 UPA812T Closest Philips BFE505 UPA806T Closest Philips BFE505 UPA808T Closest Philips BFE520 UPA812T Closest Philips , Oscillator Twin/Dual Transistor (See-A part # for Pb-free) BFM520 UPA812T Closest equivalent NPN Silicon


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PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
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