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Renesas Electronics Corporation
UPA811T-T1-A RF Small Signal Bipolar Transistor, 0.035A, 2-Element, NPN UPA811T-T1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics UPA811T-T1-A 18,000 1 $0.52 $0.52 $0.46 $0.42 $0.42 More Info

UPA811T datasheet (10)

Part ECAD Model Manufacturer Description Type PDF
UPA811T UPA811T ECAD Model Others SMD, High Frequency Amplifier, 20V 35mA 110mW, Silicon NPN Transistor (integrated circuit) Original PDF
UPA811T UPA811T ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Original PDF
uPA811T uPA811T ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4228) SMAL Original PDF
UPA811T-A UPA811T-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 8GHZ SOT363 Original PDF
uPA811TFB-T1 uPA811TFB-T1 ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4228) Small Mini Mold Original PDF
uPA811TGB-T1 uPA811TGB-T1 ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4228) Small Mini Mold Original PDF
UPA811T-T1 UPA811T-T1 ECAD Model NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
UPA811T-T1 UPA811T-T1 ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Original PDF
UPA811T-T1-A UPA811T-T1-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 8GHZ SOT363 Original PDF
UPA811T-T1-A UPA811T-T1-A ECAD Model California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

UPA811T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: ) Remark If you require an evaluation sample, please contact an NEC Sales +0.1 µPA811T-T1 , DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD The µPA811T has built-in 2 low-voltage , of the tape. 0 to 0.1 Loose products (50 PCS) 0.7 µPA811T PACKING STYLE 0.15 â , June 1996 P Printed in Japan © 1996 µPA811T ELECTRICAL CHARACTERISTICS (TA = 25 °C


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PDF PA811T 2SC4228) PA811T
icm 6116

Abstract: 2SC4228
Text: Silicon Transistor µPA811T NPN 2SC4228 PA811T, VHFUHF mm 6 5 2 3 4 2.0±0.2 , 150 -65150 110 mW P11464JJ1V0DSJ1 December 2000 N CP(K) 1996 µPA811T , µPA811T Cre-VCB fT-IC 5.0 10 VCE = 3 V f = 2 GHz fTGHZ CrepF f = 1 MHz 2.0 1.0 0.5 , 0 0.5 1 5 10 50 ICmA 3 µPA811T S VCE = 3 V, IC = 1 mA FREQUENCY S11 , -25.0 -27.6 -28.3 -29.2 -28.7 -28.3 -28.2 -28.3 -30.5 -31.5 -33.7 -34.7 µPA811T S VCE =


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PDF PA811T 2SC4228 PA811T, PA811T-T1 icm 6116 2SC4228
1999 - NE680

Abstract: S21E UPA811T UPA811T-T1
Text: capacitance bridge. For Tape and Reel version use part number UPA811T-T1 , 3K per reel. California Eastern , Collector Current, lC (mA) ORDERING INFORMATION PART NUMBER UPA811T-T1 QUANTITY 3000 PACKAGING , NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS (Units in mm) FEATURES , 3 0.65 4 2.0 ± 0.2 DESCRIPTION The UPA811T is two NPN high frequency silicon epitaxial , UPA811T S06 UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 IEBO Emitter Cutoff


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PDF UPA811T NE680 UPA811T UPA811T-T1 24-Hour S21E UPA811T-T1
Not Available

Abstract: No abstract text available
Text: number UPA811T-T1 , 3K per reel. 3-261 UPA811T TYPICAL PERFORMANCE CURVES (Ta = 25° q TOTAL POWER , ) ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING UPA811T-T1 3000 Tape & Reel 3-263 , STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package UPA811T OUTLINE DIMENSIONS (Units in mm) PACKAGE , _ The UPA811T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 , °q PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO lEBO hFE1 fT UPA811T S06 UNITS HA MIN TYP MAX


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PDF NE680 UPA811T UPA811T UPA811T-T1
1997 - nec 2532

Abstract: lem 4202 NEC 2504 free ic 2034 2SC4228 ic 4521 NEC JAPAN 282 110 01 NEC+2532
Text: an evaluation sample, please contact an NEC Sales +0.1 µPA811T-T1 Embossed tape 8 mm wide , DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD The µPA811T has built-in 2 low-voltage , to 0.1 Loose products (50 PCS) 0.7 µPA811T PACKING STYLE 0.15 ­0 PART NUMBER , Printed in Japan © 1996 µPA811T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL


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PDF PA811T 2SC4228) PA811T nec 2532 lem 4202 NEC 2504 free ic 2034 2SC4228 ic 4521 NEC JAPAN 282 110 01 NEC+2532
Not Available

Abstract: No abstract text available
Text: terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1 , 3K per reel. UPA811T , 50 Collector Current, lC (mA) ORDERING INFORMATION PART NUMBER UPA811T-T1-A QUANTITY 3000 , : 2 NE680 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz UPA811T , VOLTAGE, LOW CURRENT PERFORMANCE 2.0 ± 0.2 1.3 HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz The UPA811T , UPA811T S06 TYP MAX 1.0 1.0 200 hFE1 Cre2 NF |S21E|2 Notes: 1.Pulsed measurement, pulse width


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PDF NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour
low power rf transistor T

Abstract: No abstract text available
Text: UPA811T-T1 , 3K per reel. California Eastern Laboratories UPA811T TYPICAL PERFORMANCE CURVES (t a , 10 50 Collector Current, Ic (mA) ORDERING INFORMATION PART NUMBER UPA811T-T1 QUANTITY , mm package UPA811T OUTLINE DIMENSIONS (Units in mm PACKAGE OUTLINE S06 (Top View) 2 .1 1 0 . , 0.2 (All Leads) DESCRIPTION The UPA811T is two NPN high frequency silicon epitaxial transistors , UPA811T S06 UNITS m A PARAMETERS AND CONDITIONS Collector Cutoff Current at V cb = 10 V, Ie = 0 Em


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PDF NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T
2005 - NE680

Abstract: S21E UPA811T UPA811T-T1 UPA811T-T1-A
Text: terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1 , 3K , UPA811T-T1-A QUANTITY 3000 PACKAGING Tape & Reel Life Support Applications These NEC products are , NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS (Units in mm) FEATURES , 3 0.65 4 2.0 ± 0.2 DESCRIPTION NEC's UPA811T is two NPN high frequency silicon , SYMBOLS PARAMETERS AND CONDITIONS UPA811T S06 UNITS ICBO Collector Cutoff Current at VCB =


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PDF UPA811T NE680 UPA811T S21E UPA811T-T1 UPA811T-T1-A
1997 - Ic 6116 pin configuration details

Abstract: 2SC4228
Text: an evaluation sample, please contact an NEC Sales +0.1 µPA811T-T1 Embossed tape 8 mm wide , . DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD The µPA811T has built-in 2 low-voltage , to 0.1 Loose products (50 PCS) 0.7 µPA811T PACKING STYLE 0.15 ­0 PART NUMBER , Printed in Japan © 1996 µPA811T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL


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PDF
ultra low noise NPN transistor

Abstract: NE680 npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T UPA811T-T1
Text: terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA811T-T1 , 3K , PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS (Units in mm) FEATURES · SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package · LOW , 1 6 2 5 3 4 0.65 2.0 ± 0.2 DESCRIPTION The UPA811T is two NPN high frequency , UPA811T S06 PARAMETERS AND CONDITIONS UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE =


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PDF UPA811T NE680 UPA811T UPA811T-T1, 24-Hour ultra low noise NPN transistor npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T-T1
Not Available

Abstract: No abstract text available
Text: of the 3 term inal capacitance bridge. F o rT a p e and Reel version use part number UPA811T-T1 , 3K , PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 N E680 Die in a 2 mm x 1.25 m m package UPA811T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB T Y P at 2 G Hz HIGH GAIN: |S 2 1 E|2 = 7.5 , PACKAGE OUTLINE SYMBOLS ICBO Iebo hFE 1 c) UPA811T S06 UNITS HA HA PARAMETERS AND CONDITIONS


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PDF UPA811T UPA811T-T1, 24-Hour
UPA801T

Abstract: UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T RL PART NUMBER UPA809T +0.1 0.15 -0.5 MARKING T88 UPA801T R24, R25 UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
2003 - UPA802T

Abstract: RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 UPA808T transistor RF S-parameters cascode transistor array
Text: 1.2@1 GHz 9.0@1 GHz UPA802T/UPA812T 9.0 65 1.4@1 GHz 12.0@1 GHz UPA800T/ UPA811T 10.0


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PDF AN1028 UPA808T UPA802T RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 transistor RF S-parameters cascode transistor array
UPA802T

Abstract: BD304 NE02132
Text: 352 353 354 355 a 3 2 2 3 3 3 3 3 UPA811T NE\^ UPA812T NEW / UPA814T MICRO-X NE02135 NE68035


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132
nec d 588

Abstract: NEC 2532 NEC 2504
Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4228) SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to am plify low noise in the VHF band to the UHF band. PACKAGE DRAWINGS (U n it: m m ) 2.1 ± 0.1 1.25±0.1 FEATURES · Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, Vce = 1 V , , uPA811T QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1


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PDF uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504
UPA833TF

Abstract: UPA831TF UPA802T UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Text: Low N oise Bipolar Transistors * VCE Ic TYP TYP (V) DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1) UPA833TF (Q2) UPA834TF (Q 1) UPA834TF (Q2) UPA835TF (Q1) UPA835TF (Q2) UPA836TF (Q 1) UPA836TF (Q2) MICRO-X NE02135 NE68035 NE68135 NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA833TF UPA831TF UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Not Available

Abstract: No abstract text available
Text: / ¿PA811T QUANTITY PACKING STYLE Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. / ¿PA811T-T1


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PDF A1PA811T 2SC4228) PA811T PA811T
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
NE68018

Abstract: 814T
Text: : UPA801T UPA 802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T U PA 814T r ïü w o iN E V n


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PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: SOT-363 NE687 1.2 10.0 14.0 3 7 9.0 4.5 120 100 S06 SOT-363 UPA811T


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
2SC5743

Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Text: , TF 2SC5008 µPA811T 2SC5006 µPA810T, 2SC5006 EIAJ No. Q1 Q2 2SC5006


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
uPA63

Abstract: UPA827TF UPA831TF NE685
Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP (GHz) (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening Oto Page Number DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: µPA805T µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , µPA808T µPA809T, TF Package size µPA811T µPA810T,TC,TF µPA812T µPA813T µPA821TC, TF 2SC5006


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
1993 - transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
Text: µPA808T µPA811T µPA810T µPA812T µPA813T for Mobile Communications 2SC No. (×2) Part No , 70 250 3 7 4.5 3 0 1 µPA811T 2SC5434 20 10 1.5 200 35 3


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PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , , TF 2SC5008 µPA811T 2SC5008 µPA801T, TC, TF 2SC5006 µPA810T, TC, TF 2SC5006 µPA821TC


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
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