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California Eastern Laboratories (CEL)
UPA810T-T1-A Trans GP BJT NPN 12V 0.1A 6-Pin SOT-363 Embossed T/R - Bulk (Alt: UPA810T-T1-A) UPA810T-T1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet UPA810T-T1-A Bulk 0 1 Weeks 782 - - - $0.45911 $0.4 More Info
Renesas Electronics Corporation
UPA810T-T1-A Motion Encoder UPA810T-T1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics UPA810T-T1-A 17,687 1 $0.52 $0.52 $0.46 $0.42 $0.42 More Info

UPA810T datasheet (19)

Part ECAD Model Manufacturer Description Type PDF
UPA810T UPA810T ECAD Model California Eastern Laboratories Npn Silicon High Frequency Transistor Original PDF
UPA810T UPA810T ECAD Model NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
UPA810T UPA810T ECAD Model NEC NPN silicon high frequency transistor. Original PDF
uPA810T uPA810T ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 Original PDF
UPA810T-A UPA810T-A ECAD Model California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
UPA810T-A UPA810T-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 4.5GHZ SOT363 Original PDF
UPA810TC UPA810TC ECAD Model NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
uPA810TC uPA810TC ECAD Model NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M Original PDF
UPA810TC-T1 UPA810TC-T1 ECAD Model NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
UPA810TF UPA810TF ECAD Model NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
UPA810TF UPA810TF ECAD Model NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
uPA810TFB-T1 uPA810TFB-T1 ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
uPA810TGB uPA810TGB ECAD Model NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
UPA810T-T1 UPA810T-T1 ECAD Model California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
UPA810T-T1 UPA810T-T1 ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=4.5GHZ SOT-363 Original PDF
UPA810T-T1 UPA810T-T1 ECAD Model NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
uPA810T-T1 uPA810T-T1 ECAD Model NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 Original PDF
UPA810T-T1-A UPA810T-T1-A ECAD Model California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN FT=4.5GHZ SOT363 Original PDF
UPA810T-T1-A UPA810T-T1-A ECAD Model California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

UPA810T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - 2sc4226

Abstract: 2SC4226 APPLICATION NOTES
Text: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA · High Gain µPA810T-T1 Taping products (3 , PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD The µPA810T has built-in , Sales +0.1 Loose products (50 PCS) 0 to 0.1 µPA810T PACKING STYLE 0.15 ­0 QUANTITY , June 1996 P Printed in Japan © 1996 µPA810T ELECTRICAL CHARACTERISTICS (TA = 25 °C


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PDF PA810T 2SC4226) PA810T PA810T-T1 2sc4226 2SC4226 APPLICATION NOTES
Not Available

Abstract: No abstract text available
Text: terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA810T-T1 , 3K per , UPA810T OUTLINE DIMENSIONS (u n its m m m ) PACKAGE OUTLINE S06 (Top View) _0.2 (All Leads) DESCRIPTION The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra , SYMBOLS ICBO lEBO UPA810T S06 UNITS MIN TYP MAX PARAMETERS AND CONDITIONS Collector Cutoff


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PDF NE856 UPA810T UPA810T UPA810T-T1,
UPA810T-T1-A

Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
Text: number UPA810T-T1 , 3K per reel. The information in this document is subject to change without notice , Loose Products (50 pcs) UPA810T-T1 PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 , ) ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY UPA810T-A Loose Products (50 pcs) UPA810T-T1-A PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter , PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR


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PDF UPA810T NE856 UPA810T UPA810T-T1-A S21E UPA810T-A UPA810T-T1 ultra low noise NPN transistor
2005 - transistor

Abstract: UPA810T-A UPA810T-T1-A NE856 S21E UPA810T UPA810T-T1
Text: UPA810T-T1 , 3K per reel. The information in this document is subject to change without notice. Before using , Loose Products (50 pcs) UPA810T-T1 PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 , ) ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY UPA810T-A Loose Products (50 pcs) UPA810T-T1-A PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter , PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR


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PDF UPA810T NE856 UPA810T transistor UPA810T-A UPA810T-T1-A S21E UPA810T-T1
2SC4226

Abstract: pt 2399 PA810T
Text: Silicon Transistor µPA810T NPN 2SC4226 PA810TVHFUHF mm 1 5 2 3 , µPA810T TA = 25 MIN. TYP. MAX. ICBO VCB = 10 V, IE = 0 1.0 , 5 10 ICmA 50 µPA810T fT ­ IC S21e 2dB fTGHZ VCE = 3 V f = 1.0 GHZ 10 5 , CrepF f = 1 MHZ 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 VCBV 3 µPA810T S , -67.3 -72.3 -77.4 -82.6 µPA810T S VCE = 3 V, IC = 5 mA FREQUENCY S11 S12 S21 S22


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PDF PA810T 2SC4226 PA810TVHFUHF PA810T-T1 2SC4226 pt 2399 PA810T
OF transistor 13

Abstract: ultra low noise NPN transistor
Text: perforation side of tape ORDERING INFORMATION (Pb-Free) PART NUMBER UPA810T-A UPA810T-T1-A QUANTITY Loose , Contains Lead) PART NUMBER UPA810T UPA810T-T1 QUANTITY Loose Products (50 pcs) Taping products (3 KPCS , . For Tape and Reel version use part number UPA810T-T1 , 3K per reel. The information in this document , PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR , COLLECTOR CURRENT: 100 mA 2.0 ± 0.2 1.3 0.65 1 6 5 0.2 (All Leads) 2 3 The UPA810T is two


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PDF UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor
1997 - 634-111-2

Abstract: 2SC4226 2SC4226 APPLICATION NOTES UPA810T LEM 718
Text: TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA · High Gain µPA810T-T1 Taping products (3 KPCS/Reel , . PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD The µPA810T has built-in 2 , Loose products (50 PCS) 0 to 0.1 µPA810T PACKING STYLE 0.15 ­0 QUANTITY 0.7 PART , Printed in Japan © 1996 µPA810T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL


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PDF
8003* transistor

Abstract: transistor DB 12 NE856 S21E UPA810T UPA810T-T1 npn dual emitter RF Transistor
Text: number UPA810T-T1 , 3K per reel. California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR , VOLTAGE, LOW CURRENT PERFORMANCE HIGH COLLECTOR CURRENT: 100 mA · UPA810T PACKAGE OUTLINE S06 , ) 1.3 DESCRIPTION The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated , PACKAGE OUTLINE SYMBOLS UPA810T S06 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX


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PDF NE856 UPA810T UPA810T UPA810T-T1, 24-Hour 8003* transistor transistor DB 12 S21E UPA810T-T1 npn dual emitter RF Transistor
2002 - Not Available

Abstract: No abstract text available
Text: capacitance bridge. For Tape and Reel version use part number UPA810T-T1 , 3K per reel. California Eastern , LOW VOLTAGE, LOW CURRENT PERFORMANCE HIGH COLLECTOR CURRENT: 100 mA • UPA810T PACKAGE , 0.2 (All Leads) 1.3 DESCRIPTION The UPA810T is two NPN high frequency silicon epitaxial , (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS UPA810T S06 PARAMETERS AND CONDITIONS


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PDF NE856 UPA810T UPA810T UPA810T-T1, 24-Hour
Not Available

Abstract: No abstract text available
Text: HIGH COLLECTOR CURRENT: 100 mA UPA810T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) DESCRIPTION_ The UPA810T is two NPN high frequency silicon epitaxial , PACKAGE OUTLINE SYMBOLS ICBO c) UPA810T S06 UNITS HA HA 70 GHz PF dB dB 0.85 7 3.0 120 4.5 0.7 9 1.2


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PDF NE856 UPA810T UPA810T 810T-T1, 24-Hour
UPA801T

Abstract: UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T RL PART NUMBER UPA809T +0.1 0.15 -0.5 MARKING T88 UPA801T R24, R25 UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T UPA814T upa801 t84 marking UPA809T UPA810T UPA811T UPA812T
1999 - NE856

Abstract: S21E UPA810T UPA810TF chip die npn transistor
Text: bridge. For Tape and Reel version use part number UPA810TF-T1 , 3K per reel. California Eastern , PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS (Units in mm) · SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm · , 2.0 ± 0.2 The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low , . ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS UPA810T S06 PARAMETERS


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PDF UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor
UPA802T

Abstract: BD304 NE02132
Text: Low Noise Bipolar Transistors ' TV#' VCE (V) S x n l* Ic TYP (mA) (dB) * VIP Hn te T Y P M AX (W A J Package P fcg. Faxon Dwnand ücloaning D ee No. DUAL BIPOLAR TRANSISTORS UPA800T M E V O UPA801T ÑiwO UPA802T N E V O UPA806T N E V O UPA807T N E VO UPA808T ÑiwO UPA809T N E V O UPA810T new) 2.0 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0 2.0 3 3 5 7 7 3 3 3 7 7 5 7 :7 1.9 1.2 1.4 1.5 1.5 1.3 1.5 1.2 1.9 1.4 1.5 ' 3 3 3 3 2 2 3 3 3 3 3 .5 7 7 10 7 20 20 7 5 7 ·


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132
2003 - UPA802T

Abstract: RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 UPA808T transistor RF S-parameters cascode transistor array
Text: 15.5 10 1.5@2 GHz Ic (mA) UPA801T/ UPA810T 7.0 9.0@2 GHz Figure 2. Specifications: NEC


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PDF AN1028 UPA808T UPA802T RF transistors with s-parameters UPA807T cascode transistor array VCO S21E UPA806T AN1028 transistor RF S-parameters cascode transistor array
UPA833TF

Abstract: UPA831TF UPA802T UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
Text: Low N oise Bipolar Transistors * VCE Ic TYP TYP (V) DUAL BIPOLAR TRANSISTORS UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA814T UPA821TF UPA826TF UPA827TF UPA828TF UPA831TF (Q1) UPA831TF (Q2) UPA832TF (Q1) UPA832TF (Q2) UPA833TF (Q1) UPA833TF (Q2) UPA834TF (Q 1) UPA834TF (Q2) UPA835TF (Q1) UPA835TF (Q2) UPA836TF (Q 1) UPA836TF (Q2) MICRO-X NE02135 NE68035 NE68135 NE85635 T O -9 2 NE02132 NE85632 NE02100 NE68000 NE68100 NE68800 NE85600 NE02107 NE696M01 NE698M01


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PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA833TF UPA831TF UPA827TF dual sot363 SOT 363 NE685 SOT 153 175 sot363 sot-363
TI 9023 IC data

Abstract: 2SC4226 APPLICATION NOTES
Text: . , uPA810T-T1 Taping products (3 KPCS/Reel) Rem ark If you require an evaluation sam ple, please contact , PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226) SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to am plify low noise in the VHF band to the UHF band , INFORM ATION PART NUMBER , uPA810T Q UAN TITY Loose products (50 PCS) PACKING STYLE Em bossed tape 8 mm w


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PDF uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES
NE68018

Abstract: 814T
Text: : UPA801T UPA 802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T U PA 814T r ïü w o iN E V n


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PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T
nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
Text: UPA810T 24R, 25R UPA802T R34, R35 UPA811T 44R, 45R UPA806T T83 UPA812T 34R, 35R


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PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H NE02107 qfn marking t88 C3H marking marking code R34 C3206G
m33 tf 130

Abstract: NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
Text: 3 1.3 UPA810T 1.0 3 7 8.0 11.0 2 20 8.5 11.0 100 30 S06


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PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NE85633 NE68833 NESG2030M042 NE68139 NE68133 NE68039 NE68030
2SC5743

Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Text: , TF 2SC5008 µPA811T 2SC5006 µPA810T , 2SC5006 EIAJ No. Q1 Q2 2SC5006


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Not Available

Abstract: No abstract text available
Text: , uPA810T QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. , uPA810T-T1 Taping


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PDF PA81OT 2SC4226) PA810T uPA810T pro00
1993 - transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
Text: µPA808T µPA811T µPA810T µPA812T µPA813T for Mobile Communications 2SC No. (×2) Part No , 140 2 20 11 2 0 1 µPA810T 2SC5432 20 12 3 200 100 3 7


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PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA transistor 2SA data book pc3215 2SC5432EB
1998 - nf025

Abstract: NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
Text: µPA805T µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , µPA808T µPA809T, TF Package size µPA811T µPA810T ,TC,TF µPA812T µPA813T µPA821TC, TF 2SC5006


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PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 NE42484 x-band power transistor 100W P147D 2SK2396 nf025db uPG508 c-band lna chip
2003 - marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
Text: NE68519 NE68619 NE68719 NE68819 NE863M03 NE852M03 for VCO Part No. µPA811T µPA810T µPA812T


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PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 NE582M03 g2b 6-pin smd smd transistor g1-L NE3210SO1 smd code marking NEC 817
2012 - 2SK2396

Abstract: PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
Text: µPA806T µPA807T µPA808T µPA809T µPA810T µPA810TC µPA811T µPA812T µPA813T µPA814T µPA814TC µPA821TC , , TF 2SC5008 µPA811T 2SC5008 µPA801T, TC, TF 2SC5006 µPA810T , TC, TF 2SC5006 µPA821TC


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PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 2SC3357 2SC3545 ne27283 UPC1663 2sc2757 2sc5008 2SC2570A
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