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Renesas Electronics Corporation
UPA650TT-E1-A - Bulk (Alt: UPA650TT-E1-A) UPA650TT-E1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet UPA650TT-E1-A Bulk 0 1 Weeks 1,191 - - - - $0.27926 Buy Now
Rochester Electronics UPA650TT-E1-A 5,440 1 $0.34 $0.34 $0.3 $0.27 $0.27 Buy Now
America II Electronics UPA650TT-E1-A 7,681 - - - - - Buy Now
NEC Electronics Group
UPA650TT-E1-A UPA650TT-E1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
America II Electronics UPA650TT-E1-A 2,988 - - - - - Buy Now

UPA650 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
UPA650 UPA650 ECAD Model NEC P-channel enhancement type MOS FET Original PDF
UPA650TT UPA650TT ECAD Model NEC P-channel enhancement type MOS FET Original PDF
UPA650TT-E1 UPA650TT-E1 ECAD Model NEC P-channel enhancement type MOS FET Original PDF
UPA650TT-E1-A UPA650TT-E1-A ECAD Model Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6-WSOF Original PDF
UPA650TT-E2 UPA650TT-E2 ECAD Model NEC P-channel enhancement type MOS FET Original PDF
UPA650TT-E2-A UPA650TT-E2-A ECAD Model Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6-WSOF Original PDF

UPA650 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: µPA622TT µPA621TT 30 µPA650TT µPA651TT -20 µPA652TT -12 -30 P µPA653TT , 55 88 2.5V RDS (ON) max. (mOhm) at VGS = µPA621TT N µPA650TT µPA2351T1G


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
2002 - Not Available

Abstract: No abstract text available
Text: . DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR , 0.15 +0.1 -0.05 · · 5 1 FEATURES 6 2.1±0.1 0.25±0.1 The µPA650TT is a , µPA650TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4±0.1 PART NUMBER Marking , © 2002 µPA650TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS , VDD 90% td(off) tf toff Data Sheet G16202EJ1V0DS µPA650TT TYPICAL CHARACTERISTICS


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2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 UPD16861 2SA733A
Text: No file text available


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transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
2002 - upa650

Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR , 0.15 +0.1 -0.05 · · 5 1 FEATURES 6 2.1±0.1 0.25±0.1 The µPA650TT is a , µPA650TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4±0.1 PART NUMBER Marking , © 2002 µPA650TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS , VDD 90% td(off) tf toff Data Sheet G16202EJ1V0DS µPA650TT TYPICAL CHARACTERISTICS


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PDF PA650TT PA650TT upa650
2010 - 2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Text: -4.5 0.2 SC-95/SOT-6 3000 68 114 -5 0.2 WSOF-6 3000 UPA650TT-E1 /E2 44


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PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
2011 - FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: No file text available


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PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
2010 - RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Text: UPA621TT UPA622TT UPA650TT UPA651TT UPA602T UPA603T UPA606T UPA607T UPA610TA UPA611TA UPA672T


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PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: No file text available


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PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Not Available

Abstract: No abstract text available
Text: MOS MOS Field Effect Transistor µ PA650TT P MOS FET : mm µPA650TT 1.8 V 2.0±0.2 µPA650TT 4 2 3 1.6 5 1 6 2.1±0.1 0.25±0.1 0~0.05 1.8 V 0.65 , µPA650TT 1,2,5,6 : Drain 3 : Gate 4 : Source 6 WSOF (1620) WD 0.2 +0.1 -0.05 0.1 M S , µPA650TT TA = 25°C ° MIN. MAX. TYP. IDSS VDS = ­12 V, VGS = 0 V ­10 , % td(off) tf toff G16202JJ1V0DS µPA650TT TA = 25°C ° DERATING FACTOR OF FORWARD BIAS


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PDF PA650TT PA650TT G16202JJ1V0DS
2002 - upa650

Abstract: marking WD
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA650TT P-CHANNEL MOS FIELD , 0.25±0.1 The µPA650TT is a switching device, which can be driven directly by a 1.8 V power source , INFORMATION 0.05 S PACKAGE µPA650TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source , Published April 2002 NS CP(K) Printed in Japan © 2002 µPA650TT ELECTRICAL CHARACTERISTICS (TA = , Information G16202EJ1V0PM µPA650TT [MEMO] Preliminary Product Information G16202EJ1V0PM 3


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PDF PA650TT PA650TT upa650 marking WD
2010 - 2sk4145

Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A 2sk4080 UPA1914TE-T1 mosfet 2sk4145
Text: SC-95/SOT-6 3000 68 114 -5 0.2 WSOF-6 3000 UPA650TT-E1 /E2 44 62 105


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PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A 2sk4080 UPA1914TE-T1 mosfet 2sk4145
2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE , 0.15 +0.1 −0.05 • • 5 1 FEATURES 6 2.1±0.1 0.25±0.1 The µPA650TT is , PACKAGE µPA650TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4±0.1 PART , Published May 2002 NS CP(K) Printed in Japan © 2002 µPA650TT ELECTRICAL CHARACTERISTICS (TA = , ton RL 50 Ω VDD 90% td(off) tf toff Data Sheet G16202EJ1V0DS µPA650TT


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SC-95

Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2SJ598 2sk3919 UPA2723T1A 2SK3570
Text: -89 1000 2SJ207-T1/T2 15 UPA650TT-E1 /E2 UPA1816GR-9JG-E1/E2 2SJ205-T1/T2 1500


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PDF MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2SJ598 2sk3919 UPA2723T1A 2SK3570
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Not Available

Abstract: No abstract text available
Text: recommended demonstration board is: DEM-OPA65xP DEM-OPA65XU DEM-OPA6xxN 8-Pln DIP lor the ÛPA650P SO-8 for


OCR Scan
PDF OPA650 560MHz -77dBc OPA650 560MHz 12-bit DEM-OPA65xP DEM-OPA65XU PA650P OPA650U
upa650

Abstract: No abstract text available
Text: MOS MOS Field Effect Transistor µ PA650TT P MOS FET : mm µPA650TT 1.8 V 2.0±0.2 µPA650TT 4 2 3 1.6 5 1 6 2.1±0.1 0.25±0.1 0~0.05 1.8 V , µPA650TT 1,2,5,6 : Drain 3 : Gate 4 : Source 6 WSOF (1620) WD 0.2 +0.1 -0.05 0.1 M S , 5 sec - - G16202JJ1V0DS00 1 May 2002 NS CP(K) 2002 µPA650TT , ) tf toff G16202JJ1V0DS µPA650TT TA = 25°C ° DERATING FACTOR OF FORWARD BIAS SAFE OPERATING


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PDF PA650TT PA650TT G16202JJ1V0DS upa650
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