The Datasheet Archive

UPA2752 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
UPA2752 UPA2752 ECAD Model NEC Nch enhancement-type MOSFET (Dual type) Original PDF
UPA2752GR UPA2752GR ECAD Model NEC Nch enhancement-type MOSFET (Dual type) Original PDF
UPA2752GR-E1 UPA2752GR-E1 ECAD Model NEC Nch enhancement-type MOSFET (Dual type) Original PDF
UPA2752GR-E1-AT UPA2752GR-E1-AT ECAD Model Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
UPA2752GR-E2 UPA2752GR-E2 ECAD Model NEC Nch enhancement-type MOSFET (Dual type) Original PDF

UPA2752 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - SHINDENGEN* tr 452

Abstract: C1608JB1H100K CDRH104R-5R2 TDK C3216JB1E225K RB053L-30 C1608JB1H104K td126 r27-200 uPA2752 C3216JB1H474K
Text: µPA2752 D1 D2, D5 D3, D4 Diode Diode Diode L1 Inductor 5.2 µH 5.5 A, 22 m SUMIDA , , ID = 8.0 A NEC µPA2752 D1 D2, D5 D3, D4 Diode Diode Diode L1 Inductor 5.2 µH , loss will be higher so that power dissipation must be considered. In this application, the µPA2752 , tf × fOSC 6 Total loss : PT PT = PC + PS (ON) + PS (OFF) Example) Using the µPA2752 , ) PT = 0.272 + 0.058 + 0.067 : = 0.397 W : The above power dissipation figures for the µPA2752


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PDF DS04-27234-1E MB39A107 MB39A107 F0312 SHINDENGEN* tr 452 C1608JB1H100K CDRH104R-5R2 TDK C3216JB1E225K RB053L-30 C1608JB1H104K td126 r27-200 uPA2752 C3216JB1H474K
2005 - C3216JB1E475K

Abstract: CDRH104R-5R2 PR0816P c030 sanyo TPC8102 SBS006 RSX051VA-30 QFN28 toshiba notebook schematic diagram free LCHG
Text: -2 N-ch FET VDS = - 30 V, ID = 8 A (Max) NEC SO-8 µPA2752 Q2-1, Q2-2 P-ch FET VDS = -


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PDF DS04-27247-1E MB39A119 MB39A119 F0507 C3216JB1E475K CDRH104R-5R2 PR0816P c030 sanyo TPC8102 SBS006 RSX051VA-30 QFN28 toshiba notebook schematic diagram free LCHG
2005 - Not Available

Abstract: No abstract text available
Text: 1608 1608 1608 1608 1608 Parts No. MB39A119QN-G µPA2752 µPA1772 TPC8102 RSX051VA-30 SBS006 CDRH104R , application, the NEC µPA2752 is used. Continuity loss, on/off switching loss and total loss are determined by , kHz 1. N-ch MOS FET ( µPA2752 : NEC product) Main side VDS = 30 V, VGS = ± 20 V, ID = 8 A, RDS (ON , 1. N-ch MOS FET ( µPA2752 : NEC product) Main side VDS = 30 V, VGS = ± 20 V, ID = 8 A, RDS (ON) = 25


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PDF DS04-27247-2E MB39A119 MB39A119 F0604
2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF DS04-27247-2E MB39A119 MB39A119 F0604
2005 - cvm 3000

Abstract: MB39A119 QFN-24 QFN28 diode sg 5 ts
Text: No file text available


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PDF DS04-27247-3E MB39A119 MB39A119 cvm 3000 QFN-24 QFN28 diode sg 5 ts
2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF DS04-27247-3E MB39A119 MB39A119
2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: 7.5 9.5 15 28 82 18 27 43 50/72 13.2 10V µPA2752GR µPA2753GR 8 , µPA2752GR N/P Dual 9 µPA2751GR µPA2750GR 4.3 19 21 µPA2721GR 14 µPA2720GR , 14 13 µPA2780GR µPA2781GR 8 µPA2754GR µPA2755GR µPA2753GR µPA2752GR MOSFET


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: No file text available


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 UPD16861 2SA733A
Text: No file text available


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transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
2002 - uPA2752

Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2752GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2752GR is Dual N-Channel MOS Field Effect Transistor , PACKAGE µPA2752GR Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected , Published February 2002 NS CP(K) Printed in Japan © 2002 µPA2752GR ELECTRICAL CHARACTERISTICS , µPA2752GR TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD


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PDF PA2752GR PA2752GR uPA2752
mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: No file text available


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PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
2001 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA2752GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2752GR is Dual N-Channel MOS Field Effect Transistor designed for , µPA2752GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage , Japan © 2001 µPA2752GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected , G15716EJ1V0PM µPA2752GR [MEMO] Preliminary Product Information G15716EJ1V0PM 3 µPA2752GR · The


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PDF PA2752GR PA2752GR
2004 - PA2753GR

Abstract: M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
Text: =4.44635E-05) * .ENDS uPA2751GR-CH2 G17046JJ2V0IF 27 µ PA2752GR .SUBCKT uPA2752GR 1 2 3 , =4.44635E-05) * .ENDS uPA2752GR 28 G17046JJ2V0IF µ PA2753GR .SUBCKT uPA2753GR 1 2 3


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PDF PA27xx PA2700GR PA2700TP PA2701GR PA2701TP PA2702GR PA2702TP PA2706GR PA2706TP PA2710GR PA2753GR M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
2002 - Not Available

Abstract: No abstract text available
Text: . DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2752GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2752GR is Dual N-Channel MOS Field Effect Transistor , PACKAGE µPA2752GR Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected , Published February 2002 NS CP(K) Printed in Japan © 2002 µPA2752GR ELECTRICAL CHARACTERISTICS , µPA2752GR TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD


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