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Renesas Electronics Corporation
UPA2714GR-E1-A Transistor MOSFET P-Channel Enhancement 30V 7A 8-Pin PowerSO - Bulk (Alt: UPA2714GR-E1-A) UPA2714GR-E1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet UPA2714GR-E1-A Bulk 0 1 Weeks 334 - - - $1.03448 $0.9375 Buy Now
Rochester Electronics UPA2714GR-E1-A 5,000 1 $1.21 $1.21 $1.08 $0.98 $0.98 Buy Now

UPA2714GR datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
UPA2714GR UPA2714GR ECAD Model NEC Pch enhancement-type MOS FET Original PDF
UPA2714GR(0)-E1-A UPA2714GR(0)-E1-A ECAD Model Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF

UPA2714GR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - UPA2714GR

Abstract: PA2714GR PA2714
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2714GR is P-Channel MOS Field Effect Transistor designed , package (Power SOP8) PART NUMBER PACKAGE µPA2714GR 6.0 ±0.3 4 4.4 0.8 +0.10 ­0.05 , 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. 2002 µPA2714GR , toff µPA2714GR TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT , - Pulse Width - s Data Sheet G15982EJ2V0DS 10 100 1000 3 µPA2714GR DRAIN CURRENT


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2002 - G15982EJ2V0DS00

Abstract: PA2714GR UPA2714GR
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2714GR is P-Channel MOS Field Effect Transistor designed , package (Power SOP8) PART NUMBER PACKAGE µPA2714GR 6.0 ±0.3 4 4.4 0.8 +0.10 ­0.05 , 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. 2002 µPA2714GR , toff µPA2714GR TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT , - Pulse Width - s Data Sheet G15982EJ2V0DS 10 100 1000 3 µPA2714GR DRAIN CURRENT


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PDF PA2714GR PA2714GR G15982EJ2V0DS00 UPA2714GR
2004 - MB39A113

Abstract: 20SVP22M CDRH104R-150 FB12 FPT-24P-M03 MCH3401 RB053L-30 amplifier CV 203 UPA2714GR
Text: -7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR MCH3401 D1, D2 Diode VF = 0.42 V , dissipation must be considered. In this application, the µPA2714GR (NEC products) is used. Continuity loss , (ON) + PS (OFF) Example) Using the µPA2714GR Setting 16.8 V Input voltage VIN = 25 V, output , 0.354 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin at 2.0 , µPA2714GR are satisfied with ample margin at 2.0 W. · Inductor In selecting inductors, it is of course


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PDF DS04-27240-1Ea MB39A113 MB39A113 20SVP22M CDRH104R-150 FB12 FPT-24P-M03 MCH3401 RB053L-30 amplifier CV 203 UPA2714GR
2004 - power transistor CV 203

Abstract: DS04-27241-1Ea amplifier CV 203 RB053L-30 MCH3401 MB39A114 FPT-24P-M03 FB12 CDRH104R-150 20SVP22M
Text: Nch FET VDS = -30 V, ID = -7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR MCH3401 D1 , . In this application, the NEC µPA2714GR is used. Continuity loss, on/off switching loss and total , Example : Using the µPA2714GR 16.8 V setting Input voltage VIN (Max) = 25 V, output voltage VO = 16.8 V , + 0.189 : = 0.354 W : The above power dissipation figures for the µPA2714GR are satisfied with , = 0.309 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin


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PDF DS04-27241-1Ea MB39A114 MB39A114 power transistor CV 203 DS04-27241-1Ea amplifier CV 203 RB053L-30 MCH3401 FPT-24P-M03 FB12 CDRH104R-150 20SVP22M
2004 - MB39A113

Abstract: upa2714gr 20SVP22M CDRH104R-150 FB12 FPT-24P-M03 MCH3401 RB053L-30
Text: , ID = -7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR MCH3401 D1, D2 Diode VF = , dissipation must be considered. In this application, the µPA2714GR (NEC products) is used. Continuity loss , (ON) + PS (OFF) Example) Using the µPA2714GR Setting 16.8 V Input voltage VIN = 25 V, output , 0.354 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin at 2.0 , µPA2714GR are satisfied with ample margin at 2.0 W. · Inductor In selecting inductors, it is of course


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PDF DS04-27240-1E MB39A113 MB39A113 F0405 upa2714gr 20SVP22M CDRH104R-150 FB12 FPT-24P-M03 MCH3401 RB053L-30
2004 - 20SVP22M

Abstract: CDRH104R-150 FB12 FPT-24P-M03 MB39A114 MCH3401 RB053L-30 UPA2714GR
Text: , ID = -7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR MCH3401 D1, D2 Diode VF = , application, the NEC µPA2714GR is used. Continuity loss, on/off switching loss and total loss are determined , µPA2714GR 16.8 V setting Input voltage VIN (Max) = 25 V, output voltage VO = 16.8 V, drain current ID = 3 , 0.354 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin at 2.0 , = 0.309 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin


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PDF DS04-27241-1E MB39A114 MB39A114 F0405 20SVP22M CDRH104R-150 FB12 FPT-24P-M03 MCH3401 RB053L-30 UPA2714GR
2005 - MB39A126

Abstract: MB39A126WQN MB39A126PFV FPT-24P-M03 QFN-28 amplifier CV 203 UPA2714GR
Text: No file text available


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PDF DS04-27248-1Ea MB39A125/126 MB39A125/126 MB39A126 MB39A126WQN MB39A126PFV FPT-24P-M03 QFN-28 amplifier CV 203 UPA2714GR
2004 - NEC F0511

Abstract: MB39A126 F0511 MB39A126PFV constant current 2 terminal source MB39A126WQN AC adapter fujitsu amplify CV 203 FPT-24P-M03 QFN-28
Text: No file text available


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PDF DS04-27248-1E MB39A125/126 MB39A125/126 F0511 NEC F0511 MB39A126 F0511 MB39A126PFV constant current 2 terminal source MB39A126WQN AC adapter fujitsu amplify CV 203 FPT-24P-M03 QFN-28
2005 - UPA2714GR

Abstract: No abstract text available
Text: No file text available


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PDF DS04-27248-1Ea MB39A125/126 MB39A125/126 UPA2714GR
2005 - UPA2714GR

Abstract: No abstract text available
Text: No file text available


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2004 - UPA2714GR

Abstract: No abstract text available
Text: , ID = −7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR MCH3401 D1, D2 Diode VF = , that power dissipation must be considered. In this application, the NEC µPA2714GR is used. Continuity , Total loss : PT = PC + PS (ON) + PS (OFF) PT Example : Using the µPA2714GR 16.8 V setting , 0.189 : = 0.354 W : The above power dissipation figures for the µPA2714GR are satisfied with ample , the µPA2714GR are satisfied with ample margin at 2.0 W. • Inductor In selecting inductors, it is


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PDF DS04-27241-1Ea MB39A114 MB39A114 UPA2714GR
2004 - UPA2714GR

Abstract: No abstract text available
Text: FET Nch FET VDS = −30 V, ID = −7.0 A VDS = 30 V, ID = 1.4 A NEC SANYO µPA2714GR , dissipation must be considered. In this application, the µPA2714GR (NEC products) is used. Continuity loss , PT = PC + PS (ON) + PS (OFF) Example) Using the µPA2714GR Setting 16.8 V Input voltage VIN = 25 V , for the µPA2714GR are satisfied with ample margin at 2.0 W. Setting 12.6 V Input voltage VIN = 22 V , for the µPA2714GR are satisfied with ample margin at 2.0 W. • Inductor In selecting inductors, it


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2008 - MB39A134

Abstract: NEC 65010 RR0816P103D MB39A134PFT MB39A134EVB-01 DTC144EET1G IL028 RR0816P103-D UPA2714GR CDRH104R-150
Text: -1 µPA2714GR C1 10 µF C15 R23 0.22 200 k µF R25 *1 C17 *2 15 µH CDRH104R-150 Vo 20 m , ) NEC SOP-8 µPA2714GR Q1-2 P-ch FET Q2A P-ch FET VDS = -30 V, ID =


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PDF MB39A134 TSSOP-24 MB39A134 NEC 65010 RR0816P103D MB39A134PFT MB39A134EVB-01 DTC144EET1G IL028 RR0816P103-D UPA2714GR CDRH104R-150
2004 - UPA2714GR

Abstract: No abstract text available
Text: µPA2714GR MCH3401 D1, D2 Diode VF = 0.42 V (Max) , At IF = 3 A ROHM RB053L-30 L1 , , the NEC µPA2714GR is used. Continuity loss, on/off switching loss and total loss are determined by , : Using the µPA2714GR 16.8 V setting Input voltage VIN (Max) = 25 V, output voltage VO = 16.8 V, drain , for the µPA2714GR are satisfied with ample margin at 2.0 W. 12.6 V setting Input voltage VIN (Max , = 0.309 W : The above power dissipation figures for the µPA2714GR are satisfied with ample margin


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2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: ) (A) µPA2715GR Single Configuration µPA2714GR -30 VDSS (V) -14 P Polarity , Single P µPA2714GR µPA2715GR µPA2791GR -18 -7 5 Dual Complementary N/P , -7 P -10 µPA2712GR µPA2714GR 13 µPA2709GR µPA2713GR 19 4.3 9.5 15


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
2004 - PA2753GR

Abstract: M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
Text: =3.9394984E-06) * .ENDS uPA2713GR 18 G17046JJ2V0IF µ PA2714GR .SUBCKT uPA2714GR 1 2 3 , =2.682918739E-06) * .ENDS uPA2714GR G17046JJ2V0IF 19 µ PA2716GR .SUBCKT uPA2716GR 1 2 3


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PDF PA27xx PA2700GR PA2700TP PA2701GR PA2701TP PA2702GR PA2702TP PA2706GR PA2706TP PA2710GR PA2753GR M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
2008 - Not Available

Abstract: No abstract text available
Text: -1 µPA2714GR C1 10 µF C15 R23 0.22 200 kΩ µF R25 *1 C17 *2 15 µH CDRH104R-150 Vo , £§ Q1-1 P-ch FET VDS = − 20 V, ID = 7 A (Max) RENESAS SOP-8 µPA2714GR Q1-2 P-ch


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PDF DS04-27264-4E MB39A134 MB39A134
2008 - toshiba notebook schematic diagram free

Abstract: smd code marking fujitsu capacitor MB39A134 DS04-27264-2E marking code smd fujitsu MB39A134PFT smd code marking NEC tantalum capacitor MB39A134EVB-01 C1608JB1H224K marking code smd semiconductor fujitsu
Text: L1 Q1-1 µPA2714GR C1 10 µF C15 R23 0.22 200 k µF R25 *1 C17 *2 15 µH CDRH104R , SOP-8 µPA2714GR Q1-2 P-ch FET Q2A P-ch FET VDS = - 30 V, ID = 40 A


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PDF DS04-27264-2E MB39A134 MB39A134 toshiba notebook schematic diagram free smd code marking fujitsu capacitor DS04-27264-2E marking code smd fujitsu MB39A134PFT smd code marking NEC tantalum capacitor MB39A134EVB-01 C1608JB1H224K marking code smd semiconductor fujitsu
2008 - p-ch mosfet smd MARKING code Ct

Abstract: R30113
Text: TPCA8102 Q2A R20 6.2 k R21 91 k R22 10 k TPCA8102 Q2B Wire short R1 C1 10 µF Q1-2 *2 Q1-1 µPA2714GR R25 *1 , SOP Advance SOP Advance SC-75 RMDS Parts No. µPA2714GR TPCA8102 TPCA8102 TPCA8102 DTC144EET1G


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PDF DS04-27264-1E MB39A134 MB39A134 p-ch mosfet smd MARKING code Ct R30113
OZ8602GN

Abstract: OZ8602 OZ8602G lenovo OZ711EZ1TN lenovo t60 SLG8LP453 P41 sot-23 lenovo t61 IT8511E
Text: No file text available


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PDF ADI3207 OZ813 MAX8734 MAX8887EZK25 MAX8632 OZ8602G CK410 SLG8LP453B 4X133MHZ OZ8602GN OZ8602 lenovo OZ711EZ1TN lenovo t60 SLG8LP453 P41 sot-23 lenovo t61 IT8511E
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: No file text available


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: No file text available


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PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f rjj0319 RJP30H3 BCR1AM-12A equivalent RJJ0606
Text: . typ./max. typ./max. Ciss (pF) UPA2712GR UPA2713GR UPA2714GR UPA2715GR UPA2716AGR


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PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f rjj0319 RJP30H3 BCR1AM-12A equivalent RJJ0606
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